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Microchip Technology MX1N8168US/TR
- Part No.:
- MX1N8168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8168US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
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Product details
Overview
MX1N8168US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 48.5 V minimum breakdown voltage (V(BR)), 43.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the MX1N8168US/TR datasheet, MX1N8168US/TR pinout, MX1N8168US/TR application, or MX1N8168US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (0.5 µA max at VWM), and IEC61000-4-2/4-4 compliance - critical for mission-critical transient suppression where failure is not tolerable.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W rated device. Its hard-glass, voidless hermetic construction ensures stable performance across -55 °C to +175 °C junction temperature range.
The device operates as a unidirectional clamp with cathode-band polarity, specified for 43.0 V working standoff (VWM), 48.5 V min breakdown (V(BR) @ 1 mA), and 70.1 V max clamping voltage (VC @ 300 A). It meets IEC61000-4-5 secondary lightning protection requirements at select levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; defines safe operating window for protected signal lines. |
| V(BR) min | 48.5 V @ 1 mA - Minimum voltage at which avalanche conduction begins; ensures predictable turn-on during transients. |
| VC max | 70.1 V @ 300 A - Clamped voltage under 10/1000 µs surge; limits downstream IC stress during ESD or lightning events. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports robust protection against repetitive or single high-energy transients. |
| CT | 4 pF - Total small-signal capacitance; preserves signal integrity in >100 MHz applications like GPS receivers and high-speed serial links. |
| TJ range | -55 °C to +175 °C - Junction temperature operating range; enables deployment in extended-temperature aerospace and downhole systems. |
| ID max | 0.5 µA - Standby leakage at VWM; minimizes DC loading on sensitive analog or RF bias networks. |
Pinout & Package
MX1N8168US/TR uses an axial-leaded, hermetically sealed voidless hard-glass package with tungsten slugs and cathode band marking. Terminals are tin/lead or RoHS-compliant matte tin over copper. Weight ≈ 340 mg; dimensions per Microsemi T4-LDS-xxxx: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts surge current when clamping voltage exceeds V(BR). |
| Cathode | Reference terminal with polarity band marking | Connected to ground or lower-potential rail; defines unidirectional clamping direction (cathode-to-anode). |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for MIL-PRF-19500/513 and space-grade applications. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk; ensures long-term parameter stability in harsh environments. |
| Triple-layer passivation | Enhanced surface insulation and contamination resistance; maintains low leakage and high IR after humidity exposure. |
| Low capacitance architecture | 4 pF achieved via integrated series rectifier diode - enables protection without degrading GHz-band signal fidelity. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; suitable for low-dose-rate space electronics. |
Applications
| GPS L1/L2 Receiver Front-End Protection | Aerospace Data Bus Interface (ARINC 429) |
|---|---|
Use Scenario: Protecting RF input stages of dual-band GPS receivers from ESD and induced transients during aircraft operation. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at antenna feed point to limit voltage excursion below LNA damage threshold. Use Value: 4 pF capacitance prevents insertion loss and phase distortion in 1.2–1.6 GHz bands; 70.1 V clamping ensures LNA survival under ±15 kV contact discharge. | Use Scenario: Safeguarding ARINC 429 transmitter/receiver pins against coupling-induced surges in flight control systems. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data lines to absorb fast-rising transients while preserving signal rise time. Use Value: 43.0 V VWM aligns with ARINC 429 ±10 V nominal swing; 150 W PPP handles coupled lightning-induced energy without degradation. |
| Downhole Telemetry Instrumentation | Military Radios (HF/VHF Band) |
Use Scenario: Transient protection for sensor signal conditioning circuits exposed to electrostatic discharge in oil/gas well logging tools. IC Role / Device Role / Timing Role: Primary clamping element on analog sensor outputs operating at elevated ambient temperatures. Use Value: -55 °C to +175 °C rating supports operation in >150 °C borehole environments; hermetic seal prevents parameter drift under high-pressure hydrocarbon exposure. | Use Scenario: ESD hardening of HF/VHF transceiver antenna ports in manpack and vehicular radios subjected to field-handling events. IC Role / Device Role / Timing Role: First-line transient suppressor between antenna connector and RF switch/LNA input. Use Value: 4 pF capacitance avoids detuning of matching networks; IEC61000-4-2 Level 4 (±15 kV air/±8 kV contact) compliance verified per test report. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ43A | Surface-mount DO-214AB package; 43 V VWM; 69.4 V VC @ 300 A; 6.5 pF typical capacitance. | Higher capacitance limits use in >500 MHz designs; lacks hermetic seal and Category 1 bond. | Preferred for cost-sensitive, non-mission-critical commercial PCBs where SMT assembly is required. |
| 1N6322 | Axial-leaded, hermetic glass; 43 V VWM; 70.1 V VC @ 300 A; but 10 pF capacitance and no Category 1 qualification. | Higher capacitance reduces RF bandwidth suitability; not radiation-hardened or MIL-qualified. | Suitable for industrial control I/O protection where reliability requirements are less stringent than aerospace or defense. |
Compared with SMCJ43A and 1N6322, MX1N8168US/TR uniquely combines 4 pF capacitance, hermetic voidless packaging, Category 1 metallurgical bonding, and inherent radiation tolerance - making it the only option qualified for high-frequency, high-reliability, and extended-temperature deployments where parameter stability over lifetime is non-negotiable.
Availability
MX1N8168US/TR is available at Aetrix Electronics and suitable for GPS receiver front-ends, aerospace data bus interfaces, and downhole telemetry instrumentation requiring stable component supply, long-lifecycle support, and guaranteed hermetic reliability.
Supply support for MX1N8168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient suppression in defense, space, and oilfield electronics - prioritizing hermeticity, low capacitance, and extreme temperature resilience over cost or footprint.
FAQ
What is the maximum clamping voltage of MX1N8168US/TR under a 300 A 10/1000 µs surge?
The MX1N8168US/TR has a maximum clamping voltage (VC) of 70.1 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform at 25 °C. This value is measured across the device terminals during full conduction and defines the upper voltage limit imposed on protected circuitry during surge events. The MX1N8168US/TR maintains this clamping performance within its specified junction temperature range and is validated per IEC61000-4-5 test conditions.
Does MX1N8168US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8168US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low capacitance (4 pF), fast response time, and controlled clamping behavior enable compliance with Level 4 (±15 kV air, ±8 kV contact) ESD testing and 4 kV EFT burst requirements. The MX1N8168US/TR achieves this while maintaining low leakage and stable parameters across temperature extremes.
What does the "MX" prefix in MX1N8168US/TR signify?
The "MX" prefix in MX1N8168US/TR indicates JANTX-level reliability qualification per MIL-PRF-19500, denoting enhanced screening, lot traceability, and extended temperature validation beyond commercial-grade parts. It reflects Microsemi's classification for high-reliability versions of the 1N81xx series, with "US" specifying the axial-leaded hermetic glass package and "/TR" indicating tape-and-reel packaging per EIA-296. The MX1N8168US/TR is fully traceable and certified for aerospace and defense applications.
Can MX1N8168US/TR be used in bidirectional protection configurations?
MX1N8168US/TR is inherently unidirectional, but bidirectional protection can be implemented using two MX1N8168US/TR devices in anti-parallel configuration as shown in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving clamping symmetry. The MX1N8168US/TR itself does not support bidirectional operation in a single device; anti-parallel pairing is the validated method for AC or differential line protection.
Is MX1N8168US/TR RoHS compliant?
Yes, MX1N8168US/TR is available in RoHS-compliant versions with matte tin plating over copper leads, as confirmed in the Microsemi T4-LDS-xxxx datasheet. The "e3" suffix denotes RoHS compliance, and the part meets EU Directive 2011/65/EU requirements. Lead-free assembly compatibility is validated up to 260 °C for 10 seconds, and the MX1N8168US/TR retains full electrical specifications under RoHS processing conditions.
MX1N8168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 2.14A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8168US/TR FAQ
1.How can I place an order for MX1N8168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8168US/TR reliable?
The price and inventory of MX1N8168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8168US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8168US/TR?
MX1N8168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8168US/TR?
For technical support, including MX1N8168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8168US/TR requirements.
6.How does Aetrix verify that MX1N8168US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8168US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8168US/TR?
All MX1N8168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8168US/TR part is unused and in its original packaging.
Return procedure for MX1N8168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8168US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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