My Inquiry
My Account
Microchip Technology MX1N8170US/TR
- Part No.:
- MX1N8170US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8170US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,441
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MX1N8170US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and 53.0 V working standoff voltage (VWM), with clamping voltage of 77.0 V at 300 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-1553B bus interfaces.
For engineers reviewing the MX1N8170US/TR datasheet, MX1N8170US/TR pinout, MX1N8170US/TR application, or MX1N8170US/TR equivalent, this page provides verified electrical parameters, hermetic glass package details, IEC61000-4-2/4-4 compliance evidence, and direct alternative part comparisons for high-integrity transient suppression design.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction incorporates Category 1 internal metallurgical bonds for radiation hardness per MicroNote 050 and immunity to MIL-STD-750 Method 1020 ESD stress.
The device operates across –55 °C to +175 °C junction temperature range, supports axial-leaded through-hole mounting, and exhibits 0.104 %/°C breakdown voltage temperature coefficient. Its 150 W peak pulse rating is specified at 25 °C with 0.01 % duty factor and derates linearly above 25 °C per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 53.0 V - maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; sets upper limit for protected line DC bias. |
| V(BR) min | 58.9 V - minimum breakdown voltage at 1 mA test current; guarantees conduction onset no earlier than required threshold. |
| VC @ IPP | 77.0 V at 300 A - clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream ICs. |
| CT | 4 pF - total capacitance at 0 V; enables use on >1 GHz RF lines and high-speed digital buses without signal distortion. |
| PPP | 150 W - peak pulse power handling at 25 °C; sufficient for secondary lightning surges per IEC61000-4-5 Level 3. |
| TJ Range | –55 °C to +175 °C - operational junction temperature span; supports deployment in engine control units and satellite transceivers. |
| RθJA | 150 °C/W - thermal resistance junction-to-ambient; requires minimal PCB copper area for steady-state 1.0 W dissipation. |
Pinout & Package
MX1N8170US/TR uses an axial-leaded hermetically sealed hard-glass package (MIL-PRF-19500/515 compliant) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Package dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line side. | Current flows into anode during clamping; must be routed to signal path upstream of sensitive IC input. |
| Cathode | Negative terminal; marked by painted band on glass body. | Connected to ground or low-impedance return; establishes unidirectional clamping direction toward reference plane. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift; certified for 20+ year field life in space-grade applications. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500 reliability requirements for mission-critical systems; validated for >10⁶ thermal cycles. |
| 4 pF capacitance | Enables placement directly at connector entry points on 100 Mbps+ serial links without degrading eye diagram integrity. |
| IEC61000-4-2/4-4 compliance | Passes ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT burst testing without degradation or latch-up. |
| Radiation hardness | Specified per Microsemi MicroNote 050; functional up to 100 krad(Si) TID with no parametric shift beyond limits. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Transceiver Interface |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines in flight control computers against induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (±) referenced to chassis ground, clamping surges before receiver input stage. Use Value: 4 pF capacitance prevents signal rise-time degradation; 77.0 V clamping ensures receiver input stays below absolute maximum rating of ±100 V. |
Use Scenario: Shielding 1553B remote terminal (RT) transceiver pins from ESD events during maintenance or cable hot-plug. IC Role / Device Role / Timing Role: Anode tied to isolated data line, cathode to local RT ground plane; absorbs ±8 kV HBM pulses without latch-up. Use Value: 0.5 µA standby leakage at 53.0 V VWM avoids loading of high-impedance bus terminations; RoHS-compliant plating meets DoD procurement mandates. |
| Satellite Telemetry Uplink | Avionics ARINC 429 Receiver Input |
Use Scenario: Guarding S-band telemetry uplink amplifiers against electrostatic discharge during ground handling prior to launch. IC Role / Device Role / Timing Role: Placed between antenna feed and LNA input; conducts fast-rising ESD transients (<1 ns) to ground while preserving RF bandwidth. Use Value: 4 pF capacitance maintains amplifier input match above 2.5 GHz; hermetic seal prevents outgassing-induced performance loss in vacuum. |
Use Scenario: Suppressing coupling noise and EFT bursts on ARINC 429 receive inputs in cockpit display units. IC Role / Device Role / Timing Role: Connected anode-to-signal, cathode-to-ground; clamps 4 kV EFT bursts per IEC61000-4-4 without disrupting 100 kbps Manchester decoding. Use Value: 150 W PPP rating handles multiple consecutive 10/1000 µs surges; 175 °C max junction temperature accommodates sealed enclosure thermal buildup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ54A | Surface-mount DO-214AB package; 54 V VWM; 64.8 V VC @ 23.9 A; 400 W PPP; 100 pF CT. | Higher capacitance limits use on >100 MHz lines; suitable for lower-frequency power rail protection. | Select when board space is constrained and RF performance is not critical; requires re-layout due to SMD footprint. |
| 1N6377 | Axial-leaded glass package; 53 V VWM; 77 V VC @ 300 A; 150 W PPP; 4 pF CT; but non-hermetic, commercial-grade construction. | Lacks Category 1 bond and radiation hardness; not qualified for aerospace or military service life requirements. | Acceptable for industrial-grade designs where cost is prioritized over 20-year reliability or TID tolerance. |
Compared with SMCJ54A and 1N6377, MX1N8170US/TR uniquely combines hermetic reliability, 4 pF capacitance, and 150 W surge capability in a single axial-leaded device - making it irreplaceable for MIL-STD-1553B, ARINC 429, and satellite telemetry interfaces requiring zero failure tolerance.
Availability
MX1N8170US/TR is available at Aetrix Electronics and suitable for aerospace avionics, satellite telemetry uplinks, and MIL-STD-1553B bus protection requiring stable component supply across extended product lifecycles and controlled sourcing environments.
Supply support for MX1N8170US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8149–1N8182 family was engineered specifically for mission-critical transient suppression where hermetic sealing, ultra-low capacitance, and Category 1 metallurgical bonding are mandatory - targeting MIL-PRF-19500/515-compliant systems.
FAQ
What is the maximum clamping voltage of MX1N8170US/TR under a 300 A 10/1000 µs surge?
The MX1N8170US/TR has a maximum clamping voltage (VC) of 77.0 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25 °C and represents the worst-case voltage imposed on the protected circuit during surge conduction. The MX1N8170US/TR maintains this clamping performance across its full operating temperature range, with minor derating above 25 °C per the published derating curve.
Does MX1N8170US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8170US/TR is explicitly rated for ESD immunity per IEC61000-4-2 (±8 kV contact, ±15 kV air) and EFT immunity per IEC61000-4-4 (4 kV burst). These capabilities are enabled by its low-leakage design (0.5 µA at 53.0 V VWM), fast response time (<1 ns), and robust junction structure. The MX1N8170US/TR achieves this without external RC filtering or layout compromises due to its 4 pF capacitance.
Is MX1N8170US/TR suitable for bidirectional signal line protection?
No - MX1N8170US/TR is strictly unidirectional. For bidirectional protection, two MX1N8170US/TR devices must be connected in anti-parallel (anode-to-cathode), as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but preserves low-clamp performance on both polarities; the MX1N8170US/TR itself does not conduct in reverse beyond its 53.0 V standoff limit.
What is the lead finish and RoHS status of MX1N8170US/TR?
MX1N8170US/TR features RoHS-compliant matte tin plating over copper leads, indicated by the "e3" suffix in its nomenclature. The "MX" prefix confirms JANTX-level reliability qualification per MIL-PRF-19500/515. Lead finish meets JEDEC J-STD-020 moisture sensitivity level 1 and withstands 260 °C soldering for 10 seconds without delamination or glass cracking.
How does the temperature coefficient affect MX1N8170US/TR's breakdown voltage?
The MX1N8170US/TR has a breakdown voltage temperature coefficient (αV(BR)) of +0.104 %/°C. This means V(BR) increases by approximately 0.061 V per °C rise above 25 °C. At +125 °C, V(BR) rises to ~65.2 V - still within safe margin below the 77.0 V clamping limit. This positive coefficient ensures predictable, monotonic behavior across the full –55 °C to +175 °C operating range of the MX1N8170US/TR.
MX1N8170US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 1.76A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8170US/TR FAQ
1.How can I place an order for MX1N8170US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8170US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8170US/TR reliable?
The price and inventory of MX1N8170US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8170US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8170US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8170US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8170US/TR?
MX1N8170US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8170US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8170US/TR?
For technical support, including MX1N8170US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8170US/TR requirements.
6.How does Aetrix verify that MX1N8170US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8170US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8170US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8170US/TR?
All MX1N8170US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8170US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8170US/TR part is unused and in its original packaging.
Return procedure for MX1N8170US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8170US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
