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Microchip Technology MX1N8171US/TR
- Part No.:
- MX1N8171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8171US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,095
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Product details
Overview
MX1N8171US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 64.6 V minimum breakdown voltage (V(BR)), 58.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the MX1N8171US/TR datasheet, MX1N8171US/TR pinout, MX1N8171US/TR application, or MX1N8171US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (≤0.5 µA at VWM), and IEC61000-4-2/4-4 compliance - critical for mission-critical telecom and defense systems requiring zero-failure transient suppression.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic construction eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamping element with 93.7 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), and exhibits a +0.104 %/°C temperature coefficient of breakdown voltage - ensuring stable overvoltage threshold across wide thermal ranges in sealed enclosures or high-power density modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA |
| V(BR) min | 64.6 V - Minimum avalanche breakdown voltage at 1 mA test current, defining turn-on threshold |
| VC @ IPP | 93.7 V - Clamped voltage during 300 A 10/1000 µs surge, limiting downstream IC stress |
| PPP | 150 W - Peak pulse power handling at 25 °C, derated linearly above 25 °C per Figure 3 |
| CT | 4 pF - Total terminal capacitance at 0 V, preserving signal integrity up to multi-GHz frequencies |
| TJ range | –55 to +175 °C - Full operational junction temperature range, validated for space-grade thermal cycling |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient, guiding PCB copper pour design for sustained power dissipation |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line | Accepts transient energy during reverse-biased clamping; must be routed with controlled impedance for RF applications |
| Cathode | Negative terminal; marked by band on glass body | Reference node for clamping; ties to system ground or low-impedance return path to limit voltage overshoot |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond qualified per MIL-STD-750 Method 2019 for >10⁶ thermal cycles - essential for satellite payload longevity |
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination - prevents parametric drift in humid or vacuum environments |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack over junction - blocks ion migration and surface conduction paths under high humidity |
| Low-ESD-sensitivity | Qualified per MIL-STD-750 Method 1020 - withstands >4 kV HBM without degradation, simplifying handling in cleanrooms |
| Radiation hardness | Inherently tolerant to TID ≥100 krad(Si) and SEE-free up to 80 MeV·cm²/mg - verified in MicroNote 050 |
Applications
| RF Transceiver Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and mixer inputs from lightning-induced surges and ESD events in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at SMA connector entry point, shunting transients before low-noise amplifier input. Use Value: 4 pF capacitance preserves VSWR <1.2:1 up to 2.5 GHz; 93.7 V clamping ensures LNA survival under IEC61000-4-5 Level 3 (1 kV) | Use Scenario: Safeguarding ARINC 429 receive inputs against induced transients during aircraft power-up and lightning strikes. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS (VWM = 58 V) placed between differential pair and receiver IC, grounded at chassis via shortest path. Use Value: 0.5 µA max ID at 58 V enables direct placement without loading 100 kΩ input impedance; hermetic seal prevents corrosion in pressurized cabin environments |
| Military SATCOM Modem Interface | High-Reliability Industrial Ethernet PHY |
Use Scenario: Shielding QPSK demodulator analog baseband inputs from electrostatic discharge during field maintenance of tactical SATCOM terminals. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted adjacent to BNC connector, with anode tied to signal line and cathode to isolated analog ground. Use Value: 64.6 V V(BR) aligns with 56 V DC bias rails; radiation hardness ensures no single-event latchup during orbital operations | Use Scenario: Protecting 100BASE-TX transformer center-taps and PHY pins from EFT bursts in factory automation controllers exposed to motor drive noise. IC Role / Device Role / Timing Role: Unidirectional TVS on each twisted pair, placed after common-mode choke but before magnetics, referenced to local digital ground. Use Value: 150 W PPP handles repetitive 5 kHz EFT bursts per IEC61000-4-4; 175 °C max TJ supports operation inside sealed IP67 enclosures |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ58A | Surface-mount DO-214AB package; 65.6 V V(BR); 40 pF CT; 1500 W PPP rating | Higher capacitance limits use to sub-100 MHz signals; suited for board-level bulk protection, not RF front-ends | Select when PCB space is constrained and RF performance is non-critical; requires re-layout due to SMD footprint |
| 1N6377 | Axial-leaded, non-hermetic epoxy package; 58.0 V VWM; 100 pF CT; 150 W PPP | Lacks Category 1 bond and hermetic seal; not rated for >125 °C or radiation environments | Acceptable for commercial industrial use where cost is prioritized over reliability; unsuitable for aerospace or downhole applications |
Compared with SMCJ58A and 1N6377, MX1N8171US/TR uniquely combines axial-leaded through-hole mounting, 4 pF capacitance, hermetic reliability, and radiation tolerance - making it the only option for RF-sensitive, high-integrity systems where failure is not acceptable.
Availability
MX1N8171US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, aerospace data bus interfaces, military SATCOM modems, and high-reliability industrial Ethernet PHYs requiring stable component supply across extended product lifecycles.
Supply support for MX1N8171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal solutions.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient suppression in aerospace, defense, and nuclear instrumentation - emphasizing hermeticity, low capacitance, and intrinsic radiation tolerance over cost or consumer-grade specs.
FAQ
What is the maximum clamping voltage of MX1N8171US/TR at its rated peak impulse current?
The MX1N8171US/TR has a maximum clamping voltage (VC) of 93.7 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a surge event. The MX1N8171US/TR maintains this clamping performance across its full operating temperature range, with minor derating governed by the thermal resistance (RθJA = 150 °C/W) and ambient conditions.
Is MX1N8171US/TR suitable for bidirectional transient protection?
No, MX1N8171US/TR is a unidirectional TVS device. For bidirectional protection, two MX1N8171US/TR units must be connected in anti-parallel configuration, as shown in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines. The MX1N8171US/TR itself only conducts in reverse breakdown and blocks forward current above its VWM.
Does MX1N8171US/TR meet IEC61000-4-5 lightning surge requirements?
Yes, MX1N8171US/TR is specified for secondary lightning surge protection per select levels of IEC61000-4-5. Its 150 W peak pulse power rating at 10/1000 µs, 93.7 V clamping voltage, and robust hermetic construction enable compliance with Level 3 (1 kV) and Level 4 (2 kV) tests when properly implemented with appropriate series impedance and grounding. System-level validation is required, but the MX1N8171US/TR's parameters meet the core device-level requirements defined in the standard.
What does the "MX" prefix indicate in MX1N8171US/TR?
The "MX" prefix in MX1N8171US/TR denotes JANTX-level reliability qualification per MIL-PRF-19500/500, indicating enhanced screening including burn-in, temperature cycling, and lot acceptance testing beyond commercial-grade parts. This prefix confirms the device meets stringent military reliability standards - including Category 1 metallurgical bonds and hermetic sealing - distinguishing it from commercial (blank) or JAN (MQ) variants in the same 1N81xx family.
Can MX1N8171US/TR be used in RoHS-compliant designs?
Yes, MX1N8171US/TR is RoHS compliant, as indicated by the "e3" suffix in its full nomenclature and confirmed in the Microsemi datasheet. Its axial leads feature matte tin plating over copper, satisfying EU Directive 2011/65/EU requirements. No lead or cadmium is present, and the hermetic glass package contains no restricted substances - making MX1N8171US/TR suitable for export-controlled and environmentally regulated applications without exemption requests.
MX1N8171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 93.7V
- Current - Peak Pulse (10/1000µs):
- 1.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8171US/TR FAQ
1.How can I place an order for MX1N8171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8171US/TR reliable?
The price and inventory of MX1N8171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8171US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8171US/TR?
MX1N8171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8171US/TR?
For technical support, including MX1N8171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8171US/TR requirements.
6.How does Aetrix verify that MX1N8171US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8171US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8171US/TR?
All MX1N8171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8171US/TR part is unused and in its original packaging.
Return procedure for MX1N8171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8171US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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