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Microchip Technology MX1N8172US/TR
- Part No.:
- MX1N8172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8172US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,005
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Product details
Overview
MX1N8172US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 71.3 V minimum breakdown voltage (V(BR)), 64.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the MX1N8172US/TR datasheet, MX1N8172US/TR pinout, MX1N8172US/TR application, or MX1N8172US/TR equivalent, key selection criteria include clamping voltage (103.0 V at IPP), low-leakage standby current (0.5 µA at VWM), Category 1 metallurgical bond reliability, RoHS-compliant MELF "A" package, and IEC61000-4-2/4-4 compliance without layout compromise.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated device. Its hard-glass hermetic seal and tungsten slug construction ensure radiation hardness per MicroNote 050 and operation from –55 °C to +175 °C.
The device operates as a unidirectional clamp with defined VWM (64.0 V), VC (103.0 V at IPP = 300 A), and αV(BR) (0.105 %/°C). It supports secondary lightning protection per select IEC61000-4-5 levels and is nonsensitive to ESD per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA |
| V(BR) min | 71.3 V at 1 mA - Confirmed avalanche onset threshold under standardized test current |
| VC @ IPP | 103.0 V at 300 A (10/1000 µs) - Clamped voltage during worst-case surge, defining protected circuit stress |
| CT | 4 pF - Enables >1 GHz signal integrity in RF/data lines without impedance disruption |
| PPP | 150 W - Peak transient energy absorption capability under standard 10/1000 µs waveform |
| TJ range | –55 °C to +175 °C - Full operational envelope for space-grade and engine-control environments |
| αV(BR) | 0.105 %/°C - Predictable V(BR) drift over temperature, critical for precision clamping margins |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "A" MELF surface-mount package with tungsten slugs, cathode band marking, and RoHS-compliant matte tin plating. Dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LD = 0.028–0.032 in (0.71–0.81 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surge | Connected to protected line; conducts only when VAK ≥ V(BR) in forward direction relative to cathode |
| Cathode | Clamped output node / reference terminal | Marked by band; ties to system ground or common return to sink surge current into low-impedance path |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including aerospace and defense systems |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term bias stress in harsh environments |
| Voidless hermetic seal | Eliminates internal moisture ingress and delamination risk over 20+ year service life |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050, suitable for LEO missions |
| Low-temperature coefficient | 0.105 %/°C V(BR) drift enables stable clamping across extended thermal cycles |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553 Signal Line Clamp |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines on satellite telemetry interfaces exposed to launch-induced ESD and cosmic-ray transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (±) with grounded cathodes to clamp surges while preserving <1 ns rise-time integrity. Use Value: 4 pF capacitance prevents signal distortion at 1 Mbps; 103.0 V clamping ensures receiver ICs (e.g., HS-1553RT) remain within absolute max ratings. | Use Scenario: Safeguarding MIL-STD-1553B bus transceivers against induced lightning transients and ground bounce in avionics backplanes. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 64.0 V) placed between transformer-coupled bus lines and transceiver pins to absorb 300 A surges without latch-up. Use Value: 150 W PPP rating meets DO-160 Section 22 Level 3 lightning requirements; Category 1 bond ensures mission-critical continuity. |
| High-Speed Test Equipment Interface | Ruggedized Industrial Ethernet PHY Port |
Use Scenario: Shielding 100 MHz+ oscilloscope front-end inputs from accidental probe discharge or ESD events during field calibration. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough to minimize stub inductance and preserve bandwidth. Use Value: 4 pF CT avoids resonance below 1 GHz; 71.3 V V(BR) allows safe operation up to ±60 V common-mode swing in differential probes. | Use Scenario: Hardening 10/100BASE-TX PHY ports in factory-floor switches subjected to cable discharge events and relay switching noise. IC Role / Device Role / Timing Role: Unidirectional clamp on TX+/RX+ lines referenced to chassis ground, enabling fast response without compromising 100 Mbps timing jitter. Use Value: 0.5 µA ID at VWM minimizes DC loading on bias networks; RoHS-compliant MELF package withstands reflow and mechanical shock. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ64A | Surface-mount DO-214AB package; 64 V VWM; 100 pF CT; 1500 W PPP (400 A IPP) | Higher capacitance limits use to sub-100 MHz signals; higher power rating suits bulkier industrial enclosures | Select when surge energy exceeds 150 W but HF signal integrity is noncritical |
| 1N6157A | Axial-leaded DO-41; 64 V VWM; 100 pF CT; 150 W PPP; no Category 1 bond or radiation hardness | Through-hole mounting only; lacks hermetic seal and MIL-STD-750 qualification; lower reliability tier | Select for cost-sensitive commercial designs where aerospace-grade robustness is unnecessary |
Compared with SMCJ64A and 1N6157A, MX1N8172US/TR uniquely combines 4 pF capacitance, hermetic Category 1 bonding, and radiation hardness - making it irreplaceable for high-frequency, high-reliability signal paths where leakage, long-term stability, and TID tolerance are design-critical.
Availability
MX1N8172US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553 interface hardening, and high-speed test equipment front-end safeguarding requiring stable component supply across extended product lifecycles.
Supply support for MX1N8172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was engineered specifically for ultra-low-capacitance transient suppression in mission-critical communication links where conventional TVS diodes introduce unacceptable signal degradation or reliability risk.
FAQ
What is the clamping voltage of MX1N8172US/TR at its rated peak impulse current?
The MX1N8172US/TR has a maximum clamping voltage (VC) of 103.0 V when subjected to its rated peak impulse current (IPP) of 300 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a full-rated transient event. The MX1N8172US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of breakdown voltage (0.105 %/°C).
Is MX1N8172US/TR suitable for bidirectional transient protection?
No - MX1N8172US/TR is a unidirectional TVS diode, optimized for clamping positive transients relative to its cathode. For bidirectional protection, two MX1N8172US/TR devices must be connected in anti-parallel (cathode-to-anode), as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but preserves the same clamping performance in both polarities. The MX1N8172US/TR itself does not support symmetrical breakdown.
Does MX1N8172US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - MX1N8172US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance, low leakage (0.5 µA at 64 V), and fast response enable compliance without external filtering. The device's hermetic construction and Category 1 metallurgical bond further ensure consistent performance across repeated ESD strikes - a requirement for certified test equipment and avionics interfaces.
What is the thermal resistance and steady-state power rating of MX1N8172US/TR?
The MX1N8172US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB copper area and thermal vias to maintain junction temperature below 175 °C. Unlike transient ratings, this 1.0 W limit applies only to continuous DC or low-duty-cycle dissipation - the device is not intended for sustained power regulation.
How does the "MX" prefix in MX1N8172US/TR indicate its reliability grade?
The "MX" prefix in MX1N8172US/TR denotes JANTX-level reliability qualification per MIL-PRF-19500/562, exceeding commercial-grade specifications. It signifies screening for enhanced temperature cycling, burn-in, and parameter verification - required for aerospace and defense applications. This distinguishes MX1N8172US/TR from non-prefixed (commercial) or "MQ" (JAN) variants, and confirms its suitability for programs demanding proven high-reliability performance.
MX1N8172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 1.45A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8172US/TR FAQ
1.How can I place an order for MX1N8172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8172US/TR reliable?
The price and inventory of MX1N8172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8172US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8172US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8172US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8172US/TR?
MX1N8172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8172US/TR?
For technical support, including MX1N8172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8172US/TR requirements.
6.How does Aetrix verify that MX1N8172US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8172US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8172US/TR?
All MX1N8172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8172US/TR part is unused and in its original packaging.
Return procedure for MX1N8172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8172US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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