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Microchip Technology MX1N8173US/TR
- Part No.:
- MX1N8173US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8173US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,846
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Product details
Overview
MX1N8173US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 70 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace data links and MIL-STD-1553B bus interfaces.
For engineers reviewing the MX1N8173US/TR datasheet, MX1N8173US/TR pinout, MX1N8173US/TR application, or MX1N8173US/TR equivalent, key selection criteria include clamping voltage (113 V), surge current rating (300 A), low capacitance for RF integrity, Category 1 metallurgical bond reliability, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity levels. It uses internal tungsten slugs and Category 1 metallurgical bonds-certified per MIL-STD-750 Method 1020 for ESD insensitivity and radiation-hardened per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 70 V - Maximum continuous reverse standoff voltage before conduction; sets operating margin for protected 50–60 V signal lines. |
| V(BR) min | 77.9 V - Minimum breakdown voltage at 1 mA; guarantees turn-on threshold above VWM with defined margin. |
| VC @ IPP | 113 V - Clamping voltage at 300 A peak surge; limits transient overvoltage seen by downstream ICs. |
| PPP | 150 W - Peak pulse power handling at 10/1000 µs waveform; defines survivability against lightning-induced surges. |
| CT | 4 pF - Total capacitance at 0 V; preserves signal integrity up to ~2 GHz in RF/data paths. |
| TJ range | –55 to +175 °C - Full military-grade junction temperature range; enables deployment in avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; informs PCB copper area requirements for sustained power dissipation. |
Pinout & Package
MX1N8173US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink during forward conduction | Connected to protected line; conducts surge energy to ground when clamped. |
| Cathode | Reference terminal with polarity band | Marked end; must be tied to system ground or lowest potential reference for unidirectional protection. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination-critical for 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bond | Internal tungsten-slug interconnect certified for highest-reliability applications per MIL-PRF-19500/505. |
| 4 pF capacitance | Enables use on >1 Gbps serial links (e.g., ARINC 429, MIL-STD-1553B) without signal distortion or rise-time degradation. |
| 150 W 10/1000 µs rating | Withstands repeated lightning-induced transients per DO-160 Section 22 Level 3 without parametric shift. |
| Triple-layer passivation | Prevents surface leakage and corrosion under high-humidity, salt fog, or thermal cycling stress. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Interface |
|---|---|
Use Scenario: Protecting bidirectional command/data lines in flight control computers against induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each bus line (±) to clamp surges before they reach bus transceivers. Use Value: 4 pF capacitance avoids skew between differential pairs; 113 V clamping prevents latch-up in DS26C31/DS26C32 drivers. | Use Scenario: Shielding remote terminal unit (RTU) inputs from ESD events during maintenance or connector mating. IC Role / Device Role / Timing Role: Standoff-rated TVS on data-in and sync lines, grounded at chassis via short trace. Use Value: 70 V VWM matches 28 V aircraft supply derated margins; 300 A IPP handles contact discharge per IEC61000-4-2 Level 4. |
| Avionics Sensor Signal Conditioning | Downhole Telemetry Interface |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) in engine monitoring systems. IC Role / Device Role / Timing Role: Low-capacitance TVS on shielded twisted-pair outputs to preserve millivolt-level signal fidelity. Use Value: 4 pF loading adds <0.5% gain error at 10 kHz; –55 to +175 °C rating supports turbine-mount placement. | Use Scenario: Transient suppression on RS-485 telemetry lines in oil/gas wellhead controllers exposed to switching surges. IC Role / Device Role / Timing Role: Primary protection stage ahead of isolated RS-485 transceivers in harsh EMI environments. Use Value: Hermetic seal prevents hydrogen embrittlement at 150 °C ambient; 150 W PPP absorbs motor drive switching spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ70A | Surface-mount SMC package; 65 V VWM; 100 pF capacitance; 1500 W PPP rating. | Higher capacitance limits use to DC/low-speed signals; unsuitable for RF or >10 Mbps data lines. | Select only if board space is constrained and signal bandwidth <1 MHz; requires layout revision for SMT rework. |
| 1N6370 | Axial-leaded but non-hermetic epoxy package; 70 V VWM; 20 pF capacitance; 150 W PPP; no Category 1 bond. | Lacks radiation hardness and long-term hermetic reliability; not qualified for flight-critical systems. | Acceptable for commercial industrial controls where 10-year MTBF suffices; avoid in aerospace or nuclear instrumentation. |
Compared with SMCJ70A and 1N6370, MX1N8173US/TR uniquely combines axial-leaded through-hole robustness, 4 pF RF transparency, and MIL-qualified hermetic reliability-making it the sole choice for high-integrity, high-frequency transient protection where failure is not an option.
Availability
MX1N8173US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B interface hardening, and avionics sensor signal conditioning requiring stable component supply across extended production lifecycles.
Supply support for MX1N8173US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The 1N8149–1N8182 family was engineered specifically for mission-critical transient suppression in defense, space, and downhole applications where hermeticity, low capacitance, and Category 1 bonding are mandatory design requirements.
FAQ
What is the clamping voltage of MX1N8173US/TR at its rated peak surge current?
The MX1N8173US/TR has a maximum clamping voltage (VC) of 113 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MX1N8173US/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable avalanche characteristics.
Is MX1N8173US/TR RoHS compliant?
Yes, MX1N8173US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature per Microsemi's part numbering system. The device uses matte tin plating over copper leads and meets Directive 2011/65/EU requirements. RoHS compliance does not compromise its hermetic seal integrity or Category 1 metallurgical bond reliability-both retained in the e3 variant.
Can MX1N8173US/TR be used for bidirectional transient protection?
No, MX1N8173US/TR is strictly unidirectional. For bidirectional protection, two MX1N8173US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles total capacitance to 8 pF but retains low-clamp performance; it is commonly deployed on differential buses like RS-422 or MIL-STD-1553B where both polarities require suppression.
What is the thermal resistance of MX1N8173US/TR, and how does it affect PCB layout?
The MX1N8173US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. This means that under steady-state conditions, every watt of dissipated power raises the junction temperature by 150 °C above ambient. Since the device is rated for only 1.0 W average power, PCB layout must provide adequate copper area and airflow-especially in sealed enclosures-to prevent exceeding the +175 °C maximum junction temperature. The MX1N8173US/TR is not intended for continuous power dissipation.
Does MX1N8173US/TR meet IEC61000-4-5 for lightning surge immunity?
MX1N8173US/TR provides secondary lightning protection per select levels of IEC61000-4-5, as confirmed in the Applications/Benefits section of its datasheet. Its 150 W peak pulse power rating at 10/1000 µs aligns with Level 3 (1 kV open-circuit voltage, 2 Ω source impedance) testing. However, system-level compliance requires proper PCB grounding, trace routing, and coordination with upstream MOVs or gas discharge tubes-MX1N8173US/TR alone does not guarantee full IEC61000-4-5 pass without holistic design.
MX1N8173US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 1.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8173US/TR FAQ
1.How can I place an order for MX1N8173US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8173US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8173US/TR reliable?
The price and inventory of MX1N8173US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8173US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8173US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8173US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8173US/TR?
MX1N8173US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8173US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8173US/TR?
For technical support, including MX1N8173US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8173US/TR requirements.
6.How does Aetrix verify that MX1N8173US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8173US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8173US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8173US/TR?
All MX1N8173US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8173US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8173US/TR part is unused and in its original packaging.
Return procedure for MX1N8173US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8173US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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