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Microchip Technology MX1N8174US/TR
- Part No.:
- MX1N8174US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8174US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,708
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Product details
Overview
MX1N8174US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a working standoff voltage (VWM) of 75.0 V with clamping voltage (VC) of 125.0 V at 300 A IPP.
For engineers reviewing the MX1N8174US/TR datasheet, MX1N8174US/TR pinout, MX1N8174US/TR application, or MX1N8174US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bond reliability, hermetic glass packaging, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its hard-glass hermetic construction with tungsten slugs ensures robust thermal performance and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, supports 0.01% impulse repetition rate, and provides stable clamping at 125.0 V under 300 A peak impulse current. Its 150 W PPP rating is derated linearly above 25 °C ambient per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA |
| VC @ IPP | 125.0 V @ 300 A - Clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - Peak pulse power handling capability at 25 °C, derated above ambient |
| CT | 4 pF - Total capacitance at 0 V, enabling >1 GHz signal integrity in RF/data lines |
| TJ Range | –55 °C to +175 °C - Extended operating range suitable for aerospace and downhole applications |
| RθJA | 150 °C/W - Thermal resistance defining junction-to-ambient heat dissipation on standard PCB |
| αV(BR) | 0.105 %/°C - Temperature coefficient of breakdown voltage, critical for precision over temperature |
Pinout & Package
MX1N8174US/TR uses an axial-leaded hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper, weight ≈340 mg, and dimensions per Microsemi drawing: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption | Connected to protected line; conducts during reverse-biased surge event |
| Cathode | Output terminal with polarity band marking | Connected to ground or reference rail; defines unidirectional conduction direction |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and long-term parameter drift in harsh environments |
| Category 1 metallurgical bond | Internal tungsten-slug bonding certified for high-reliability military/aerospace use |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and solder flux exposure |
| Low 4 pF capacitance | Preserves signal integrity in high-speed data lines (USB 2.0, RS-485, CAN FD, RF front-ends) |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID), validated per Microsemi MicroNote 050 |
Applications
| Telecom Line Protection | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in airborne communication modules from lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each line to clamp transients while preserving signal rise/fall times. Use Value: 4 pF capacitance prevents signal distortion at >10 Mbps data rates; 125.0 V clamping limits bus voltage excursion within receiver tolerance. | Use Scenario: Shielding ARINC 429 data lines in flight control computers from ESD and induced transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on transmit/receive lines, leveraging 75.0 V VWM to match bus voltage margins. Use Value: Hermetic glass package ensures reliability over 20,000 flight hours; Category 1 bond meets DO-160 Section 22 requirements. |
| Medical Imaging Signal Chain | Industrial Ethernet PHY Protection |
Use Scenario: Safeguarding analog video outputs from ultrasound and MRI systems against EFT bursts. IC Role / Device Role / Timing Role: Low-capacitance TVS on coaxial video lines to suppress fast transients without degrading bandwidth. Use Value: 4 pF capacitance maintains >500 MHz analog bandwidth; 150 W PPP handles repetitive EFT per IEC61000-4-4 Level 4. | Use Scenario: Protecting 100BASE-TX Ethernet PHY differential pairs in factory automation gateways. IC Role / Device Role / Timing Role: Unidirectional TVS on MDI lines, selected for low CT to avoid jitter and return loss degradation. Use Value: 125.0 V clamping ensures PHY ICs remain within absolute maximum ratings during 10/1000 µs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ75A | Surface-mount SMC package; 65 pF capacitance vs. 4 pF; 1500 W PPP rating | Higher capacitance limits use to lower-speed interfaces; higher PPP suits bulkier surge events | Select when board space is constrained and speed < 10 Mbps; not suitable for RF or high-speed serial links |
| 1N6372 | Axial-leaded but non-hermetic epoxy package; 100 pF capacitance; no Category 1 bond or radiation hardness | Lacks qualification for aerospace or medical safety-critical systems | Acceptable for commercial industrial use where reliability and radiation tolerance are not required |
Compared with SMCJ75A and 1N6372, MX1N8174US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and Category 1 bonding-making it irreplaceable in high-frequency, mission-critical signal protection where parameter stability and long-term survivability are non-negotiable.
Availability
MX1N8174US/TR is available at Aetrix Electronics and suitable for telecom line protection, avionics data bus protection, and medical imaging signal chain applications requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability programs.
Supply support for MX1N8174US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MX1N8174US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetic TVS diodes, engineered specifically for ESD/EFT protection in high-frequency, high-integrity systems where failure is not an option.
FAQ
What is the clamping voltage of MX1N8174US/TR at its rated peak impulse current?
The MX1N8174US/TR has a maximum clamping voltage (VC) of 125.0 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a surge event. The MX1N8174US/TR maintains this clamping performance across its full operating temperature range, supported by its low αV(BR) of 0.105 %/°C.
Is MX1N8174US/TR RoHS compliant?
Yes, MX1N8174US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature per Microsemi's part numbering system. Its axial leads use matte tin plating over copper, satisfying EU Directive 2011/65/EU. The device also complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for through-hole assembly processes.
How does the 4 pF capacitance of MX1N8174US/TR impact high-speed signal integrity?
The 4 pF total capacitance of MX1N8174US/TR minimizes loading on high-speed signal paths, preserving rise/fall times and reducing insertion loss in applications such as RS-485, CAN FD, and RF front-ends. At 100 MHz, its capacitive reactance exceeds 400 Ω, ensuring negligible shunt path disturbance. This enables MX1N8174US/TR to protect >1 Gbps data links without measurable jitter or eye diagram degradation.
What is the meaning of "Category 1 metallurgical bond" in MX1N8174US/TR?
"Category 1 metallurgical bond" refers to Microsemi's proprietary internal tungsten-slug bonding process used in MX1N8174US/TR, qualified for high-reliability applications including MIL-PRF-19500 and MIL-STD-883 Class B. It ensures mechanical and electrical stability under thermal cycling, vibration, and shock-critical for aerospace, downhole, and medical life-support systems where field failure is unacceptable.
Can MX1N8174US/TR be used for bidirectional transient protection?
No, MX1N8174US/TR is strictly unidirectional. For bidirectional protection, two MX1N8174US/TR devices must be connected in anti-parallel per Figure 5 of the datasheet-resulting in doubled capacitance (8 pF) and symmetric clamping. This configuration is validated for IEC61000-4-5 secondary lightning protection but requires careful layout to balance parasitic inductance between both legs.
MX1N8174US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 1.2A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8174US/TR FAQ
1.How can I place an order for MX1N8174US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8174US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8174US/TR reliable?
The price and inventory of MX1N8174US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8174US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8174US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8174US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8174US/TR?
MX1N8174US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8174US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8174US/TR?
For technical support, including MX1N8174US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8174US/TR requirements.
6.How does Aetrix verify that MX1N8174US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8174US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8174US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8174US/TR?
All MX1N8174US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8174US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8174US/TR part is unused and in its original packaging.
Return procedure for MX1N8174US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8174US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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