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Microchip Technology MX1N8175US/TR
- Part No.:
- MX1N8175US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8175US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,873
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Product details
Overview
MX1N8175US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 82 V working standoff voltage (VWM) with 137 V clamping voltage (VC) at 300 A IPP.
For engineers reviewing the MX1N8175US/TR datasheet, MX1N8175US/TR pinout, MX1N8175US/TR application, or MX1N8175US/TR equivalent, key selection criteria include low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, Category 1 metallurgical bond reliability, and axial-leaded through-hole mounting compatibility in hard-glass construction.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its hermetically sealed voidless glass package ensures stable performance across -55 °C to +175 °C junction temperature range and supports MIL-STD-750 Method 1020 ESD insensitivity.
The device operates with 0.5 µA maximum standby current at 82 V VWM and achieves 137 V clamping voltage at 300 A peak impulse current. Its thermal resistance is 150 °C/W, and it meets IEC61000-4-5 secondary lightning protection requirements for select levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 82 V - Maximum continuous reverse standoff voltage before conduction begins |
| VC @ IPP | 137 V at 300 A - Clamped voltage during 10/1000 µs surge, limiting downstream stress |
| PPP | 150 W - Peak pulse power handling capability under standard waveform |
| CT | 4 pF - Enables protection of >1 GHz RF lines and high-baud-rate data interfaces |
| ID | 0.5 µA - Minimal leakage at rated VWM preserves signal integrity in sensitive receivers |
| TJ Range | -55 °C to +175 °C - Supports operation in aerospace, downhole, and military environments |
| RθJA | 150 °C/W - Thermal design requires adequate PCB copper area for sustained power dissipation |
Pinout & Package
MX1N8175US/TR is housed in an axial-leaded, voidless hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight is ~340 mg; dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input/Line side | Connected to protected signal or power line; conducts during positive transients relative to cathode |
| Cathode | Ground/Reference side | Marked by band; ties to system ground or low-impedance return path; defines unidirectional clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and voids, ensuring long-term parameter stability in harsh environments |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space and defense systems |
| Triple-layer passivation | Enhances surface insulation and prevents leakage path formation under humidity or contamination |
| Low 4 pF capacitance | Preserves signal rise time and bandwidth in RF front-ends, USB 2.0, and Ethernet PHY interfaces |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air ESD and 4 kV EFT burst immunity without derating |
Applications
| RF Transceiver Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band and S-band antenna feedlines and transceiver I/O pins from induced lightning surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between RF port and matching network to limit transient voltage without degrading insertion loss. Use Value: 4 pF capacitance avoids detuning of 50 Ω impedance-matched paths; 137 V VC ensures safe margin below GaAs FET breakdown thresholds. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential data lines against electrostatic discharge and switching transients on aircraft control systems. IC Role / Device Role / Timing Role: Discrete TVS mounted on each line pair to clamp common-mode surges while preserving signal edge fidelity. Use Value: 0.5 µA ID prevents DC loading of high-impedance receivers; -55 °C to +175 °C rating supports operation across full aircraft environmental envelope. |
| Downhole Oilfield Sensor Interface | Military Power Supply Input Stage |
Use Scenario: Shielding pressure, temperature, and acoustic sensors deployed in high-temperature oil/gas wellbores from cable-induced transients. IC Role / Device Role / Timing Role: Primary overvoltage protector on sensor excitation and analog output lines, upstream of signal conditioning circuitry. Use Value: Hermetic glass package withstands 175 °C ambient and H₂S exposure; 150 W PPP handles long-duration surges from motor drive coupling. | Use Scenario: Front-end transient suppression on 28 V DC aircraft power distribution boards feeding mission-critical avionics loads. IC Role / Device Role / Timing Role: Standoff-rated TVS placed across input rails to shunt load dump and inductive kick energy. Use Value: 82 V VWM provides 2.9× margin above nominal 28 V bus; Category 1 bond ensures survivability after repeated 150 W surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ82A | Surface-mount DO-214AB package; 6.5 pF capacitance; 135 V VC at 243 A IPP | Lacks hermetic seal and Category 1 bond; not qualified for aerospace or downhole use | Preferred for cost-sensitive commercial PCBs where board space is constrained and reliability requirements are lower |
| 1N6320 | Axial-leaded, non-hermetic epoxy package; 10 pF capacitance; 130 V VC at 250 A IPP | No triple-layer passivation or MIL-STD-750 ESD qualification; limited to 150 °C TJ max | Suitable for industrial controls where 4 pF is not required and temperature extremes are absent |
Compared with SMCJ82A and 1N6320, MX1N8175US/TR uniquely combines 4 pF capacitance, hermetic voidless construction, Category 1 metallurgical bonding, and full -55 °C to +175 °C operation-making it irreplaceable in radiation-hardened, high-reliability, or extreme-environment deployments.
Availability
MX1N8175US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus interface, and downhole oilfield sensor interface requiring stable component supply and guaranteed long-term availability.
Supply support for MX1N8175US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8149–1N8182 family was engineered specifically for mission-critical transient suppression where failure is not an option-emphasizing hermetic sealing, ultra-low capacitance, and Category 1 metallurgical reliability in harsh thermal and radiation environments.
FAQ
What is the clamping voltage of MX1N8175US/TR at its rated peak impulse current?
The MX1N8175US/TR has a maximum clamping voltage (VC) of 137 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe operating limits during surge events. The MX1N8175US/TR maintains this VC performance across its full operational temperature range due to its stable hermetic construction.
Is MX1N8175US/TR RoHS compliant?
Yes, MX1N8175US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature per Microsemi's part numbering system. The device uses matte tin plating over copper leads and meets Directive 2011/65/EU requirements. RoHS compliance applies to both material content and manufacturing process, and the MX1N8175US/TR retains full electrical and thermal specifications under RoHS-constrained processing.
Does MX1N8175US/TR support bidirectional transient protection?
No, MX1N8175US/TR is a unidirectional TVS diode. Bidirectional protection requires two MX1N8175US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the original datasheet. This arrangement doubles total capacitance to 8 pF but enables symmetrical clamping for AC-coupled or differential signal lines where polarity reversal occurs.
What is the maximum steady-state power dissipation for MX1N8175US/TR?
The MX1N8175US/TR has a maximum steady-state (average) power dissipation of 1.0 W at 25 °C ambient temperature, as specified in the Maximum Ratings table. This rating assumes controlled thermal resistance from mounting point to ambient; exceeding this average power risks junction temperature rise beyond the 175 °C absolute maximum, especially given its 150 °C/W thermal resistance. The MX1N8175US/TR is intended for transient-not continuous-power handling.
How does the internal rectifier diode affect the circuit behavior of MX1N8175US/TR?
The MX1N8175US/TR integrates a unique rectifier diode in series and opposite direction to the TVS junction, enabling ultra-low 4 pF capacitance while preserving unidirectional clamping. This architecture blocks reverse leakage during normal operation and sharpens turn-on response during positive transients. Unlike standard TVS diodes, the MX1N8175US/TR exhibits no significant capacitance increase near VWM, making it ideal for RF and high-speed digital interfaces.
MX1N8175US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 82V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8175US/TR FAQ
1.How can I place an order for MX1N8175US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8175US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8175US/TR reliable?
The price and inventory of MX1N8175US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8175US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8175US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8175US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8175US/TR?
MX1N8175US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8175US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8175US/TR?
For technical support, including MX1N8175US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8175US/TR requirements.
6.How does Aetrix verify that MX1N8175US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8175US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8175US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8175US/TR?
All MX1N8175US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8175US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8175US/TR part is unused and in its original packaging.
Return procedure for MX1N8175US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8175US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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