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Microchip Technology MX1N8176US/TR
- Part No.:
- MX1N8176US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8176US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,343
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Product details
Overview
MX1N8176US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 94.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, datacom, and avionics interfaces without signal integrity degradation.
For engineers reviewing the MX1N8176US/TR datasheet, MX1N8176US/TR pinout, MX1N8176US/TR application, or MX1N8176US/TR equivalent, key selection criteria include clamping voltage (VC = 152.0 V), surge current rating (IPP = 300 A), low-leakage standby current (ID ≤ 0.5 µA), and Category 1 metallurgical bond reliability for aerospace-grade deployments.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic package ensures zero internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with cathode-anode polarity, rated for 94.0 V DC working standoff and 152.0 V clamping at 300 A peak impulse. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity levels without derating up to 125 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 94.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets safe operating margin for 75–90 V signal rails. |
| VC @ IPP | 152.0 V - Clamping voltage at 300 A peak surge; limits downstream IC stress during lightning transients per IEC61000-4-5 Level 3. |
| PPP | 150 W - Peak pulse power at 10/1000 µs waveform; sustains single-event surges without thermal runaway. |
| CT | 4 pF - Total terminal capacitance at 0 V; preserves signal integrity in >1 GHz RF paths and USB 3.0/PCIe Gen2+ interfaces. |
| TJ Range | –55 °C to +175 °C - Full military-grade junction temperature range; validated for avionics, downhole, and space-qualified systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for 1.0 W steady-state dissipation. |
| V(BR) Min | 104.0 V - Minimum breakdown voltage at 1 mA; guarantees robust overvoltage triggering margin above VWM. |
Pinout & Package
MX1N8176US/TR uses an axial-leaded "A" package (hard-glass hermetic, voidless, tungsten slug construction), with cathode identified by a painted band. Leads are RoHS-compliant matte tin-plated copper. Weight: ~340 mg. Dimensions: BD = 1.52–2.16 mm, BL = 2.69–4.45 mm, LD = 0.71–0.81 mm, LL = 20.32–33.02 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input/Line side terminal | Connected to protected signal line; conducts surge current toward cathode during overvoltage events. |
| Cathode | Output/Ground reference terminal | Marked with band; ties to system ground or low-impedance return path; defines unidirectional clamping polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal tungsten-copper bond qualified per MIL-STD-750 Method 2024; eliminates interfacial delamination under thermal cycling and shock. |
| Triple-layer passivation | Silicon nitride/silicon dioxide stack prevents moisture ingress and surface conduction; enables >1000 hrs HAST reliability. |
| Voidless hermetic seal | Zero internal voids in hard glass envelope; prevents helium leak rates <1×10⁻⁸ atm·cc/sec - critical for vacuum and space applications. |
| Nonsensitive to ESD | Withstands >30 kV HBM per MIL-STD-750 Method 1020 without parameter shift; eliminates pre-handling screening requirements. |
| Inherent radiation hardness | No TID degradation up to 100 krad(Si); no SEB/SEL observed up to 60 MeV-cm²/mg LET - verified in MicroNote 050. |
Applications
| Avionics Data Bus Protection | High-Speed RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed at connector entry point, shunting surge energy to chassis ground before reaching receiver input stage. Use Value: 4 pF capacitance avoids signal rise-time degradation (<10% overshoot at 1 MHz edge rate); 152.0 V VC ensures FPGA I/O stays within absolute maximum ratings. |
Use Scenario: Guarding LNA inputs in S-band radar front-ends against ESD during antenna maintenance or environmental coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough, minimizing stub length to preserve VSWR <1.5:1 up to 3.5 GHz. Use Value: 4 pF CT adds <0.1 dB insertion loss at 2.5 GHz; 104.0 V V(BR) provides 10% margin over 90 V bias rail while rejecting ±15 kV contact ESD. |
| Downhole Telemetry Interface | Spacecraft Command & Telemetry Line |
Use Scenario: Shielding RS-485 transceivers in oil/gas logging tools exposed to 175 °C wellbore temperatures and cable discharge events. IC Role / Device Role / Timing Role: Standoff-rated TVS installed on twisted-pair lines entering ASIC interface, operating continuously at 150 °C junction temperature. Use Value: 175 °C max TJ and 150 °C/W RθJA allow direct mounting on ceramic substrate with no heatsink; 0.5 µA ID prevents bus loading at elevated temperature. |
Use Scenario: Securing 1553B bus terminations on satellite payload boards subject to single-event effects and total ionizing dose. IC Role / Device Role / Timing Role: Radiation-hardened TVS placed at bus controller interface, providing secondary surge suppression after primary filtering. Use Value: Inherent 100 krad(Si) TID tolerance eliminates need for shielding or derating; 300 A IPP handles spacecraft static discharge pulses without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ90A | Surface-mount DO-214AB package; 90 V VWM; 146 V VC @ 328 A; 150 W PPP; 12 pF CT. | Higher capacitance limits use in >500 MHz circuits; lacks Category 1 bond and radiation hardness. | Select when board space is constrained and radiation/environmental specs are commercial-grade only. |
| 1N6372 | Axial-leaded, 91 V VWM, 150 W PPP, 10 pF CT, non-hermetic epoxy package, –65 °C to +175 °C. | No voidless seal or triple-layer passivation; not qualified for MIL-STD-750 Method 2024 or radiation testing. | Choose for cost-sensitive industrial applications where hermeticity and radiation tolerance are not required. |
Compared with SMCJ90A and 1N6372, MX1N8176US/TR uniquely combines 4 pF capacitance, Category 1 metallurgical bonding, voidless hermetic sealing, and inherent radiation hardness - making it the only option qualified for avionics, downhole, and spaceflight signal-line protection where failure is not tolerable.
Availability
MX1N8176US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, high-speed RF front-end protection, and downhole telemetry interface applications requiring stable component supply across extended temperature and radiation environments.
Supply support for MX1N8176US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
The MX1N8176US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical protection in defense, space, and oilfield electronics where zero-failure tolerance is mandated.
FAQ
What is the clamping voltage of MX1N8176US/TR at its rated peak surge current?
The MX1N8176US/TR has a maximum clamping voltage (VC) of 152.0 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe operating voltage limits during transient events such as lightning-induced surges or EFT bursts.
Does MX1N8176US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8176US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance and low leakage (≤0.5 µA at 94.0 V) enable clean, repeatable performance in test setups compliant with both standards without external filtering.
Is MX1N8176US/TR suitable for operation at 175 °C junction temperature?
Yes, MX1N8176US/TR is fully specified for continuous operation from –55 °C to +175 °C junction temperature. Its hard-glass hermetic construction and Category 1 metallurgical bond ensure parameter stability and mechanical integrity at maximum TJ, making it appropriate for downhole and engine-mounted electronics.
What does the "MX" prefix indicate in MX1N8176US/TR?
The "MX" prefix in MX1N8176US/TR denotes JANTX-level reliability qualification per MIL-PRF-19500, including extended screening for burn-in, thermal shock, and hermeticity. It signifies compliance with military-grade process controls and traceability - distinct from commercial (blank) or space-grade (MS) variants.
How is the polarity marked on MX1N8176US/TR?
MX1N8176US/TR uses a painted cathode band on the glass body to identify the cathode terminal. The anode is the unmarked lead. This marking aligns with industry-standard diode polarity conventions and is visible under standard optical inspection during manual or automated assembly.
MX1N8176US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 104V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 980mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8176US/TR FAQ
1.How can I place an order for MX1N8176US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8176US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8176US/TR reliable?
The price and inventory of MX1N8176US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8176US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8176US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8176US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8176US/TR?
MX1N8176US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8176US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8176US/TR?
For technical support, including MX1N8176US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8176US/TR requirements.
6.How does Aetrix verify that MX1N8176US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8176US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8176US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8176US/TR?
All MX1N8176US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8176US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8176US/TR part is unused and in its original packaging.
Return procedure for MX1N8176US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8176US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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