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Microchip Technology MX1N8177US/TR
- Part No.:
- MX1N8177US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8177US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,609
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Product details
Overview
MX1N8177US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 114 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MX1N8177US/TR datasheet, MX1N8177US/TR pinout, MX1N8177US/TR application, or MX1N8177US/TR equivalent, this device is selected for ESD/EFT protection in RF front-ends, MIL-STD-750-compliant systems, and radiation-hardened signal lines where low capacitance and hermetic reliability are mandatory.
Technical Context
The MX1N8177US/TR implements a unique low-capacitance architecture using a TVS junction in series with an oppositely oriented rectifier diode, achieving 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its unidirectional clamping behavior is defined by a 114 V VWM and 168 V clamping voltage (VC) at 300 A IPP.
Rated for -55 °C to +175 °C junction temperature, it uses hard-glass hermetic packaging with tungsten slugs and internal Category 1 metallurgical bonds. It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 lightning levels, and is inherently radiation-hard per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 114 V - maximum continuous reverse-biased operating voltage before clamping onset |
| VC @ IPP=300 A | 168 V - clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - peak pulse power handling at 25 °C, derated above 25 °C per Figure 3 |
| CT | 4 pF - total small-signal capacitance enabling >1 GHz RF line protection without signal distortion |
| TJ Range | -55 °C to +175 °C - extended thermal range supporting operation in avionics and space-qualified enclosures |
| ID @ VWM | 0.5 µA - ultra-low leakage ensuring minimal DC loading on protected signal paths |
| αV(BR) | 0.089 %/°C - temperature coefficient of breakdown voltage, critical for stable clamping across temperature |
Pinout & Package
MX1N8177US/TR is housed in an axial-leaded "A" package (hard-glass, voidless-hermetically sealed) with cathode band polarity marking. Leads are RoHS-compliant matte tin over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption | Connected to protected line; conducts during overvoltage events when cathode is held at higher potential |
| Cathode | Reference/return terminal | Marked by band; tied to system ground or reference rail; defines unidirectional conduction direction |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass construction | Eliminates moisture ingress and internal voids, ensuring long-term reliability in vacuum and high-humidity environments |
| Category 1 metallurgical bond | Meets MIL-PRF-19500 requirements for high-reliability semiconductor devices used in mission-critical systems |
| 4 pF capacitance | Enables protection of high-speed data lines (e.g., RS-422, MIL-STD-1553B, RF antenna feeds) without bandwidth degradation |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands handling ESD without parameter shift, simplifying manufacturing and test flow |
| Inherent radiation hardness | No TID or SEE degradation up to 100 krad(Si), validated per Microsemi MicroNote 050 for space applications |
Applications
| RF Front-End Protection | MIL-STD-1553B Bus Protection |
|---|---|
Use Scenario: Protecting LNA inputs and antenna switch outputs in airborne radar transceivers from induced transients and ESD. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at RF port, absorbing surges before they reach sensitive GaAs MMIC stages. Use Value: 4 pF capacitance preserves VSWR and insertion loss below 2.5 GHz; 168 V VC limits voltage excursion to safe levels for ±15 V bias rails. | Use Scenario: Safeguarding bidirectional data lines in military vehicle avionics against load dump and coupling-induced spikes. IC Role / Device Role / Timing Role: Two MX1N8177US/TR devices mounted anti-parallel to provide symmetrical clamping on differential 1553B data lines. Use Value: Dual-device configuration yields 8 pF total capacitance - still compatible with 1 Mbps data rate while meeting MIL-STD-461 CS115. |
| Aerospace Power Sequencing | Radiation-Hardened Telemetry Interface |
Use Scenario: Protecting enable/control signals in satellite power management units during launch vibration and thermal cycling. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V control logic lines, preventing latch-up from ESD events during integration testing. Use Value: 114 V VWM accommodates 28 V bus transients; hermetic seal prevents parametric drift after 10,000 thermal cycles (-55/+125 °C). | Use Scenario: Shielding telemetry analog inputs (e.g., thermocouple, pressure sensor) in nuclear reactor monitoring systems. IC Role / Device Role / Timing Role: Low-leakage TVS on signal conditioning inputs, suppressing fast transients without injecting offset error. Use Value: 0.5 µA ID ensures <1 nV input offset contribution; radiation hardness eliminates need for shielding or redundancy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ110A | Surface-mount DO-214AB package; 110 V VWM; 170 V VC @ 300 A; 170 W PPP; 15 pF CT | Higher capacitance limits use in >500 MHz circuits; lacks hermetic seal and radiation hardness | Preferred for cost-sensitive industrial PCBs where SMT assembly and moderate reliability suffice |
| 1N6378 | Axial-leaded, non-hermetic glass; 110 V VWM; 170 V VC @ 290 A; 150 W PPP; 12 pF CT; no Category 1 bond | Not qualified for space or high-reliability programs; susceptible to moisture-induced parameter shift | Acceptable for commercial-grade telecom surge protection where full MIL-spec compliance is not required |
Compared with SMCJ110A and 1N6378, MX1N8177US/TR delivers uniquely low 4 pF capacitance, hermetic reliability, and radiation tolerance - making it irreplaceable in RF-intensive aerospace platforms where signal integrity and lifetime assurance are non-negotiable.
Availability
MX1N8177US/TR is available at Aetrix Electronics and suitable for RF front-end protection, MIL-STD-1553B bus safeguarding, and aerospace power sequencing requiring stable component supply across extended product lifecycles.
Supply support for MX1N8177US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal ICs and discrete components.
The 1N8149–1N8182 family was designed specifically for mission-critical transient suppression in aerospace, defense, and nuclear instrumentation systems where hermeticity, low capacitance, and guaranteed performance under extreme environmental stress are mandatory.
FAQ
What is the clamping voltage of MX1N8177US/TR at its rated peak impulse current?
The MX1N8177US/TR has a maximum clamping voltage (VC) of 168 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during a surge event. The MX1N8177US/TR maintains this clamping performance across its full operating temperature range, with minor derating above 25 °C per the manufacturer's derating curve.
Is MX1N8177US/TR RoHS compliant?
Yes, MX1N8177US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, satisfying EU Directive 2011/65/EU requirements. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and its hermetic glass package is inherently exempt from certain RoHS restrictions applicable to plastic-encapsulated semiconductors.
Can MX1N8177US/TR be used for bidirectional transient protection?
MX1N8177US/TR is unidirectional by design, but bidirectional protection can be achieved by connecting two MX1N8177US/TR devices in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement provides symmetrical clamping on both polarities, doubling total capacitance to 8 pF - still suitable for high-speed data lines up to 1 Gbps. No internal bidirectional variant exists for this part number.
What is the maximum steady-state power dissipation of MX1N8177US/TR at ambient temperature?
The MX1N8177US/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25 °C, limited by its thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This rating assumes adequate PCB thermal management; exceeding it risks junction temperature rise beyond the 175 °C maximum. For continuous DC stress, the device must remain below its 114 V VWM to avoid standby leakage escalation - the MX1N8177US/TR is not intended for sustained forward conduction.
Does MX1N8177US/TR meet MIL-STD-750 test requirements?
Yes, MX1N8177US/TR is explicitly characterized as nonsensitive to ESD per MIL-STD-750 Method 1020, confirming robustness during handling and board assembly. Its Category 1 internal metallurgical bond and voidless hermetic construction also satisfy mechanical and environmental test requirements outlined in MIL-PRF-19500, including thermal shock, vibration, and hermeticity testing - all verified in Microsemi's qualification report for the 1N8149–1N8182 series.
MX1N8177US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 168V
- Current - Peak Pulse (10/1000µs):
- 890mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8177US/TR FAQ
1.How can I place an order for MX1N8177US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8177US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8177US/TR reliable?
The price and inventory of MX1N8177US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8177US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8177US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8177US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8177US/TR?
MX1N8177US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8177US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8177US/TR?
For technical support, including MX1N8177US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8177US/TR requirements.
6.How does Aetrix verify that MX1N8177US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8177US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8177US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8177US/TR?
All MX1N8177US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8177US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8177US/TR part is unused and in its original packaging.
Return procedure for MX1N8177US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8177US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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