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Microchip Technology MX1N8178US/TR
- Part No.:
- MX1N8178US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8178US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,699
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Product details
Overview
MX1N8178US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 110 V working standoff voltage (VWM), with clamping voltage of 183 V at 300 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the MX1N8178US/TR datasheet, MX1N8178US/TR pinout, MX1N8178US/TR application, or MX1N8178US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical electronics.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with tungsten slugs enables stable performance across –55 °C to +175 °C junction temperature range and inherent radiation hardness per MicroNote 050.
The device operates with 0.5 µA maximum standby current at 110 V VWM and exhibits a 0.107 %/°C breakdown voltage temperature coefficient. Its clamping behavior is characterized by 183 V VC at 300 A IPP under 10/1000 µs waveform, supporting robust secondary lightning protection per select IEC61000-4-5 levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse standoff voltage before conduction begins; sets operating margin for protected signal lines. |
| VC @ IPP | 183 V at 300 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream circuitry. |
| PPP | 150 W - Peak pulse power handling capability; determines survivability against high-energy transients. |
| CT | 4 pF - Total small-signal capacitance; enables use in >1 GHz RF/data lines without signal integrity degradation. |
| TJ Range | –55 °C to +175 °C - Junction temperature range; supports operation in extreme environments including avionics and downhole tools. |
| ID @ VWM | 0.5 µA - Leakage current at rated standoff; ensures minimal loading on high-impedance analog or RF circuits. |
| αV(BR) | 0.107 %/°C - Temperature coefficient of breakdown voltage; enables predictable V(BR) drift over temperature for precision protection design. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse-transient clamping when cathode is held at higher potential. |
| Cathode | Negative terminal; marked with band | Connected to ground or reference rail; establishes unidirectional clamping path and defines polarity-sensitive protection direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture and particle migration, ensuring long-term parameter stability in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications per MIL-PRF-19500, enabling use in space-grade and defense systems. |
| Triple-layer passivation | Enhances surface insulation and resistance to contamination, critical for sustained performance in harsh industrial or military enclosures. |
| Low-temperature coefficient | 0.107 %/°C αV(BR) minimizes V(BR) shift across operational temperature range, improving clamping consistency in thermal cycling conditions. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Transceiver Interface |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines in satellite telemetry subsystems exposed to ESD and induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (±) to clamp transients while preserving signal edge integrity. Use Value: 4 pF capacitance prevents rise-time degradation; 183 V clamping limits bus voltage excursion below receiver absolute maximum rating. | Use Scenario: Shielding MIL-STD-1553B remote terminal transceivers from lightning-induced surges on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS deployed at connector interface to absorb 10/1000 µs transients before reaching IC-level protection. Use Value: 150 W PPP and Category 1 bond ensure survival of repeated surge events in flight-critical avionics without parameter drift. |
| Downhole Oilfield Sensor Interface | Radiation-Hardened Ground Station RF Front-End |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) in deep-well drill string electronics subjected to thermal shock and EFT. IC Role / Device Role / Timing Role: Low-leakage (0.5 µA) TVS mounted directly at sensor output pins to prevent false triggering and DC offset errors. Use Value: –55 °C to +175 °C TJ range and hermetic seal maintain protection integrity during rapid thermal cycling in geothermal environments. | Use Scenario: Protecting LNA inputs in satellite ground station receivers from nearby lightning strikes and static discharge during maintenance. IC Role / Device Role / Timing Role: Ultra-low-capacitance TVS placed before first-stage amplification to avoid gain reduction or noise figure degradation. Use Value: 4 pF CT preserves RF bandwidth up to 2.4 GHz; radiation hardness per MicroNote 050 ensures no parametric shift after neutron exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ110A | Surface-mount SMC package; 5.5 pF capacitance; 170 V clamping at 300 A; JEDEC-standard footprint. | Designed for automated PCB assembly; lacks Category 1 bond and hermetic seal; not qualified for space or extended temperature operation. | Select when cost, volume production, and reflow compatibility outweigh need for extreme reliability and radiation tolerance. |
| 1N8178US | Same die and electrical specs; identical axial-leaded "A" package; non-RoHS (SnPb) plating instead of matte tin. | No functional difference; used where legacy solder processes or Pb-containing assembly are required per MIL-STD-2000A. | Choose when RoHS exemption applies or SnPb soldering is mandated by program specification. |
Compared with SMCJ110A and 1N8178US, MX1N8178US/TR provides uniquely verified hermetic reliability, radiation hardness, and 4 pF capacitance - making it the only option qualified for flight-critical, high-temperature, or radiation-intensive deployments where failure is not tolerable.
Availability
MX1N8178US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B transceiver interfaces, and downhole oilfield sensor interfaces requiring stable component supply across extended product lifecycles.
Supply support for MX1N8178US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was developed to meet stringent MIL-PRF-19500 requirements for transient protection in mission-critical systems where conventional TVS devices fail due to parameter drift, leakage, or catastrophic rupture under surge stress.
FAQ
What is the clamping voltage of MX1N8178US/TR at its rated surge current?
The MX1N8178US/TR has a maximum clamping voltage (VC) of 183 V when subjected to a 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MX1N8178US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient and hermetic construction.
Is MX1N8178US/TR suitable for bidirectional transient protection?
No - MX1N8178US/TR is a unidirectional TVS. For bidirectional protection, two MX1N8178US/TR devices must be connected in anti-parallel, as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity. The MX1N8178US/TR itself does not conduct in the forward direction beyond its specified VWM and is not rated for reverse conduction.
Does MX1N8178US/TR comply with IEC61000-4-2 and IEC61000-4-4 standards?
Yes - MX1N8178US/TR is explicitly rated for ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as confirmed in the Applications/Benefits section of the official datasheet. Its 4 pF capacitance, low leakage, and fast response enable effective suppression of contact and air-discharge ESD events up to ±15 kV, and burst immunity up to 4 kV, without compromising signal fidelity in high-speed interfaces.
What is the meaning of the "MX" prefix in MX1N8178US/TR?
The "MX" prefix in MX1N8178US/TR indicates JANTX-level reliability qualification per MIL-PRF-19500, signifying enhanced screening, lot traceability, and guaranteed performance across –55 °C to +175 °C. This distinguishes it from commercial-grade variants (blank prefix) and higher-tier JANTXV (MV) or JANS (MS) versions. The MX1N8178US/TR meets all electrical, mechanical, and environmental requirements defined for the 1N8178 device at this reliability level.
Can MX1N8178US/TR be used in surface-mount designs?
No - MX1N8178US/TR uses an axial-leaded "A" package intended for through-hole mounting. While the datasheet notes that the same die is available in MELF ("A" MELF) surface-mount format (e.g., 1N8178USM), the MX1N8178US/TR variant specifically features axial leads and is not compatible with SMT reflow or pick-and-place processes. Substitution requires redesigning the PCB layout and verifying mechanical and thermal performance.
MX1N8178US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 183V
- Current - Peak Pulse (10/1000µs):
- 820mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8178US/TR FAQ
1.How can I place an order for MX1N8178US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8178US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8178US/TR reliable?
The price and inventory of MX1N8178US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8178US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8178US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8178US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8178US/TR?
MX1N8178US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8178US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8178US/TR?
For technical support, including MX1N8178US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8178US/TR requirements.
6.How does Aetrix verify that MX1N8178US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8178US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8178US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8178US/TR?
All MX1N8178US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8178US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8178US/TR part is unused and in its original packaging.
Return procedure for MX1N8178US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8178US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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