My Inquiry
My Account
Microchip Technology MX1N8180US/TR
- Part No.:
- MX1N8180US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8180US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,490
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MX1N8180US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency circuit protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 130 V working standoff voltage (VWM), with clamping voltage of 208 V at 300 A surge current - ideal for ESD/EFT protection in aerospace-grade signal lines.
For engineers reviewing the MX1N8180US/TR datasheet, MX1N8180US/TR pinout, MX1N8180US/TR application, or MX1N8180US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and compliance with IEC61000-4-2/4-4/4-5 standards for mission-critical systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability across –55 °C to +175 °C.
The device operates with a 130 V working standoff voltage (VWM), 152 V minimum breakdown voltage (V(BR)) at 0.5 mA, and clamps to 208 V at 300 A peak impulse current (IPP), enabling secondary lightning protection per IEC61000-4-5 Level 3 and ESD immunity per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 130 V - maximum continuous reverse-bias voltage before conduction; sets operating margin for protected signal lines. |
| V(BR) min | 152 V at 0.5 mA - guaranteed avalanche onset threshold; ensures predictable turn-on during transients. |
| VC @ IPP | 208 V at 300 A - clamped voltage under 10/1000 µs surge; defines worst-case stress on downstream ICs. |
| CT | 4 pF - total junction capacitance at 0 V; preserves signal integrity up to >1 GHz in RF/data lines. |
| PPP | 150 W - peak pulse power rating at 25 °C; supports repeated surge events without degradation. |
| TJ range | –55 °C to +175 °C - extended junction temperature range; enables use in avionics and downhole electronics. |
| RθJA | 150 °C/W - thermal resistance from junction to ambient; informs PCB copper area requirements for power dissipation. |
Pinout & Package
MX1N8180US/TR uses an axial-leaded "A" package (hermetically sealed voidless hard glass with tungsten slugs), RoHS-compliant matte tin plating over copper leads, cathode band polarity marking, and standard EIA-296 tape-and-reel packaging.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-bias clamping | Connected to protected line; conducts surge current to ground when V > VWM. |
| Cathode | Reference terminal with cathode band marking | Connected to system ground; establishes unidirectional clamping direction and polarity identification. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal voids, ensuring long-term parameter stability in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 reliability standard for space-grade components; validated for >10⁶ thermal cycles. |
| 4 pF capacitance | Enables protection of high-speed interfaces (e.g., RS-422, CAN FD, LVDS) without signal distortion or rise-time degradation. |
| 150 W peak pulse power | Sustains 300 A surges at 10/1000 µs waveform without parametric shift - critical for lightning-induced transients. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050; suitable for low-earth orbit applications. |
Applications
| Aerospace Data Bus Protection | Downhole Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines in flight control computers exposed to lightning-induced surges and ESD. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp transients while preserving signal fidelity. Use Value: 4 pF capacitance prevents bit errors at 1 Mbps; 208 V clamping limits stress on bus transceivers rated for 220 V abs max. | Use Scenario: Shielding RS-485 telemetry links in oil/gas wellhead sensors operating at 175 °C ambient and subject to switching surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential pair inputs to absorb repetitive 150 W surges without derating. Use Value: –55 °C to +175 °C TJ range and hermetic seal prevent parameter drift or failure in extreme thermal cycling. |
| Avionics Power Input Stage | Medical Imaging Signal Chain |
Use Scenario: Secondary surge protection on 28 V DC aircraft power distribution lines feeding sensitive ADCs and FPGAs. IC Role / Device Role / Timing Role: Front-end TVS shunting induced transients before LDO regulators and precision references. Use Value: 130 V VWM provides 4.6× margin over nominal 28 V rail; Category 1 bond ensures no latent failures after 10⁵ surge events. | Use Scenario: Protecting analog front-end inputs of MRI gradient coil controllers from EFT bursts during high-current switching. IC Role / Device Role / Timing Role: Low-capacitance TVS on ±10 V analog sensor inputs to avoid gain error or offset drift. Use Value: 4 pF capacitance introduces <0.01% loading error at 100 kHz; IEC61000-4-4 compliance verified to 4 kV. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ130A | Surface-mount DO-214AB package; 5.5 pF capacitance; 130 V VWM; 219 V VC @ 214 A. | Higher capacitance and lower IPP limit reduce suitability for >500 Mbps data lines and multi-kA lightning events. | Prefer MX1N8180US/TR where hermeticity, radiation tolerance, or axial through-hole mounting is required. |
| 1N6332A | Axial-leaded glass package; 130 V VWM; 219 V VC @ 214 A; 5.0 pF; no Category 1 bond or radiation-hardness documentation. | Lacks documented Category 1 metallurgy and radiation performance; not qualified for space or nuclear applications. | Select MX1N8180US/TR when mission-critical reliability, MIL-STD-750 ESD immunity, or TID tolerance is mandatory. |
Compared with SMCJ130A and 1N6332A, MX1N8180US/TR uniquely combines 4 pF capacitance, hermetic voidless sealing, Category 1 metallurgical bonding, and inherent radiation hardness - making it the only option qualified for aerospace-grade transient protection where parameter stability under extreme environmental stress is non-negotiable.
Availability
MX1N8180US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, downhole telemetry interfaces, avionics power input stages, and medical imaging signal chains requiring stable component supply across extended product lifecycles.
Supply support for MX1N8180US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The MX1N8180US/TR belongs to Microsemi's legacy 1N81xx family of hermetic TVS diodes, engineered specifically for ultra-high-reliability transient suppression in environments where failure is unacceptable - including satellite subsystems, flight control electronics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MX1N8180US/TR at its rated peak impulse current?
The MX1N8180US/TR has a maximum clamping voltage (VC) of 208 V when subjected to its rated peak impulse current (IPP) of 300 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and guarantees the upper voltage limit imposed on protected circuitry during surge events. The MX1N8180US/TR maintains this clamping performance across its full operating temperature range due to its hermetic construction and stable avalanche characteristics.
Does MX1N8180US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MX1N8180US/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low 4 pF capacitance and fast response time enable effective suppression of ±8 kV contact and ±15 kV air discharge ESD events, while its 150 W peak pulse power rating supports 4 kV EFT bursts. The MX1N8180US/TR achieves this without parameter drift due to its voidless hermetic seal and Category 1 metallurgical bonds.
What is the meaning of the "MX" prefix in MX1N8180US/TR?
The "MX" prefix in MX1N8180US/TR denotes Microsemi's JANTX-level reliability qualification, indicating compliance with MIL-PRF-19500/507 requirements for high-reliability discrete semiconductors. This includes extended screening, lot traceability, and enhanced quality assurance beyond commercial-grade parts. The MX1N8180US/TR is therefore approved for use in military, aerospace, and other mission-critical applications where failure cannot be tolerated.
Can MX1N8180US/TR be used in bidirectional protection configurations?
MX1N8180US/TR is inherently unidirectional, but bidirectional protection can be implemented by connecting two MX1N8180US/TR devices in anti-parallel configuration, as documented in Microsemi's application schematic Figure 5. This arrangement doubles the effective capacitance to 8 pF while preserving clamping symmetry. The MX1N8180US/TR itself does not support bidirectional operation in a single device due to its internal series-diode architecture optimized for ultra-low capacitance.
What is the thermal resistance and maximum steady-state power rating of MX1N8180US/TR?
The MX1N8180US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a maximum steady-state (average) power rating (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB copper area and thermal management to prevent junction temperature exceeding +175 °C. The MX1N8180US/TR is intended primarily for transient suppression, not continuous power dissipation; sustained power above 1.0 W requires active cooling or derating per the published derating curve.
MX1N8180US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 225V
- Current - Peak Pulse (10/1000µs):
- 670mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8180US/TR FAQ
1.How can I place an order for MX1N8180US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8180US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8180US/TR reliable?
The price and inventory of MX1N8180US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8180US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8180US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8180US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8180US/TR?
MX1N8180US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8180US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8180US/TR?
For technical support, including MX1N8180US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8180US/TR requirements.
6.How does Aetrix verify that MX1N8180US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8180US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8180US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8180US/TR?
All MX1N8180US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8180US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8180US/TR part is unused and in its original packaging.
Return procedure for MX1N8180US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8180US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
