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Microchip Technology MX1N8181US/TR
- Part No.:
- MX1N8181US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MX1N8181US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,039
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Product details
Overview
MX1N8181US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 150 V working standoff voltage (VWM), with clamping voltage of 261 V at 300 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750 qualified systems.
For engineers reviewing the MX1N8181US/TR datasheet, MX1N8181US/TR pinout, MX1N8181US/TR application, or MX1N8181US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance without layout compromise in RF front-end or avionics bus interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction uses tungsten slugs and internal Category 1 metallurgical bonds for radiation hardness and thermal stability across –55 °C to +175 °C.
The device operates with 150 V working standoff voltage (VWM), 171 V minimum breakdown voltage (V(BR)) at 1 mA, and clamps to 261 V at 300 A peak impulse current (IPP). Its 150 W peak pulse power rating is specified per 10/1000 µs waveform, with derating to zero at +175 °C ambient per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets operating margin for protected signal lines. |
| V(BR) min | 171 V at 1 mA - Ensures reliable avalanche conduction onset above normal operating voltage, preventing premature clamping. |
| VC @ IPP | 261 V at 300 A - Clamping voltage during 10/1000 µs surge; defines maximum stress imposed on downstream circuitry. |
| CT | 4 pF - Enables use in >1 GHz RF paths and high-speed serial links (e.g., RS-422, MIL-STD-1553) without signal integrity degradation. |
| PPP | 150 W - Peak transient energy absorption capability under standard 10/1000 µs waveform; supports lightning-level secondary protection. |
| TJ range | –55 °C to +175 °C - Full operational temperature coverage for space-grade and engine-control applications without derating loss. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for steady-state 1.0 W dissipation. |
Pinout & Package
MX1N8181US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), RoHS-compliant matte tin plating over copper leads, cathode band marking, and ~340 mg mass. Mounting is position-independent.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse surge | Connected to protected line; conducts only when voltage exceeds VWM, diverting surge to ground via cathode. |
| Cathode | Reference terminal / surge return path | Typically tied to system ground or chassis; completes low-inductance surge path; marked by colored band on glass body. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk - critical for 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/502 requirements for die attach integrity under thermal cycling and mechanical shock. |
| 4 pF total capacitance | Preserves signal rise time and impedance matching in >500 Mbps differential links without added termination complexity. |
| IEC61000-4-2/4-4 compliance | Validated to ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT burst immunity - no external filtering needed. |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per MicroNote 050 - suitable for low-earth orbit satellite payload interfaces. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553B Transceiver Interface |
|---|---|
Use Scenario: Protecting bidirectional command/data lines in flight control computers against induced lightning transients and ESD during maintenance. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each bus line (±) referenced to chassis ground, clamping surges before transceiver input stages. Use Value: 4 pF capacitance prevents signal distortion on 1 Mbps Manchester-encoded bus; 261 V clamping ensures transceiver ICs remain within absolute max ratings. |
Use Scenario: Shielding MIL-STD-1553B remote terminal (RT) transceivers from coupling-induced transients in vehicle-mounted electronics. IC Role / Device Role / Timing Role: Standoff-rated TVS on isolated transformer-coupled bus lines, operating below 150 V VWM to avoid false triggering during normal ±27 V common-mode swings. Use Value: Hermetic glass package withstands extended thermal cycling in armored vehicle environments; Category 1 bond ensures survivability under vibration-induced stress. |
| High-Frequency RF Front-End Protection | Satellite Telemetry Receiver Input |
Use Scenario: Safeguarding L-band (1–2 GHz) receiver inputs in ground station antennas from nearby lightning strikes and static discharge. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at SMA connector feedthrough, shunting transients before first-stage LNA. Use Value: 4 pF capacitance avoids resonant detuning of matching networks; 150 W PPP handles multi-kA induced surges without parametric shift. |
Use Scenario: Protecting telemetry downlink receivers in CubeSats exposed to deep-space radiation and launch-induced ESD. IC Role / Device Role / Timing Role: Radiation-hardened TVS on analog IF output stage of SDR-based demodulator, referenced to isolated power ground. Use Value: Inherent TID tolerance eliminates need for shielding mass; 175 °C max junction temperature supports operation near propulsion subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ150A | Surface-mount DO-214AB package; 4.5 pF capacitance; 150 V VWM; 246 V VC @ 312 A; plastic encapsulation. | Limited to commercial-grade thermal cycling and non-hermetic humidity exposure; unsuitable for vacuum or long-life sealed modules. | Select when board space is constrained and radiation/moisture reliability is not required. |
| 1N6337 | Axial-leaded glass package; 150 V VWM; 250 V VC @ 300 A; 6 pF capacitance; non-hermetic; no Category 1 bond. | Lower surge robustness and higher capacitance degrade RF performance; lacks radiation hardness and MIL-STD-750 ESD immunity. | Acceptable for industrial control panels where cost drives selection and environmental severity is moderate. |
Compared with SMCJ150A and 1N6337, MX1N8181US/TR provides superior high-frequency fidelity (4 pF), guaranteed hermetic reliability, and inherent radiation tolerance - making it the only choice for mission-critical aerospace and defense signal integrity assurance.
Availability
MX1N8181US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553B interface hardening, and satellite telemetry receiver input protection requiring stable component supply across extended product lifecycles.
Supply support for MX1N8181US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and extended-temperature solutions.
The MX1N8181US/TR belongs to Microsemi's legacy 1N81xx series of voidless-hermetic TVS diodes, engineered specifically for failure-intolerant transient protection in military avionics, satellite communications, and nuclear instrumentation systems.
FAQ
What is the maximum clamping voltage of MX1N8181US/TR under standard surge conditions?
The MX1N8181US/TR clamps to a maximum of 261 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform at 25 °C. This value is measured across the device terminals during surge conduction and defines the upper voltage limit imposed on protected circuitry. The clamping voltage remains within specification across the full operating temperature range, with minor increase at elevated junction temperatures per derating curve in the datasheet.
Is MX1N8181US/TR suitable for bidirectional transient protection?
No - MX1N8181US/TR is strictly unidirectional. For bidirectional protection, two MX1N8181US/TR devices must be connected in anti-parallel (cathode-to-anode), as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same VWM and clamping performance in both polarities. A single MX1N8181US/TR cannot clamp positive surges on its anode side.
Does MX1N8181US/TR meet RoHS compliance requirements?
Yes - the "e3" suffix in the full part number MX1N8181US/TR indicates RoHS-compliant matte tin plating over copper leads, per Microsemi's nomenclature guide. The device contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE above threshold limits. RoHS compliance is verified through material declarations and third-party testing per EU Directive 2011/65/EU.
What is the thermal resistance junction-to-ambient (RθJA) for MX1N8181US/TR?
The thermal resistance junction-to-ambient (RθJA) for MX1N8181US/TR is 150 °C/W, measured on standard FR-4 PCB with minimal copper area. This value assumes axial-leaded mounting with leads soldered to 0.05-inch-wide traces and no additional heatsinking. For continuous 1.0 W power dissipation, the junction temperature will rise 150 °C above ambient - thus limiting steady-state use to ≤25 °C ambient unless enhanced cooling is applied.
How does the internal series rectifier diode affect the electrical behavior of MX1N8181US/TR?
The internal series rectifier diode - oriented opposite the TVS junction - blocks forward conduction while enabling ultra-low 4 pF capacitance in reverse bias. It does not alter VWM or clamping behavior but prevents parasitic conduction paths that would otherwise increase capacitance in conventional TVS structures. This architecture is exclusive to Microsemi's 1N81xx series and is confirmed in Figure 4 of the datasheet schematic.
MX1N8181US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 261V
- Current - Peak Pulse (10/1000µs):
- 570mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MX1N8181US/TR FAQ
1.How can I place an order for MX1N8181US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MX1N8181US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MX1N8181US/TR reliable?
The price and inventory of MX1N8181US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MX1N8181US/TR is usually 5 days.
3.What payment methods are accepted for MX1N8181US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MX1N8181US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MX1N8181US/TR?
MX1N8181US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MX1N8181US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MX1N8181US/TR?
For technical support, including MX1N8181US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MX1N8181US/TR requirements.
6.How does Aetrix verify that MX1N8181US/TR is sourced from the original manufacturer or authorized distributors?
All MX1N8181US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MX1N8181US/TR meets industry standards.
7.What is the process for return or replacement of MX1N8181US/TR?
All MX1N8181US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MX1N8181US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MX1N8181US/TR part is unused and in its original packaging.
Return procedure for MX1N8181US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MX1N8181US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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