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Microchip Technology MXDA3KP7.5AE3
- Part No.:
- MXDA3KP7.5AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- 16-SMD, Gull Wing
- Datasheet:
-
MXDA3KP7.5AE3.pdf
- Description:
- UNI-DIRECTIONAL TVS_16L DIP
- Quantity:
- Payment:
- Shipping:
Inventory:6,371
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Product details
Overview
MXDA3KP7.5AE3 from Microsemi is a unidirectional 3000 W surface-mount transient voltage suppressor (TVS) array with 7.5 V standoff voltage (VWM), 8.33–9.21 V breakdown voltage (V(BR)), and 12.9 V clamping voltage (VC) at 232.6 A peak pulse current (IPP); used for secondary lightning protection, ESD/EFT suppression, and inductive switching transient protection in industrial power supplies and telecom interfaces.
For engineers reviewing the MXDA3KP7.5AE3 datasheet, MXDA3KP7.5AE3 pinout, MXDA3KP7.5AE3 application, or MXDA3KP7.5AE3 equivalent, key selection criteria include VWM ≥ system peak operating voltage, VC margin relative to protected IC's absolute maximum rating, IPP capability under IEC61000-4-5 10/1000 µs waveform, and RoHS-compliant matte-tin termination compatibility with lead-free reflow.
Technical Context
This TVS device operates as a voltage-clamped shunt protector: it remains high-impedance below VWM (7.5 V), avalanches sharply at V(BR) min = 8.33 V, and clamps transients to ≤12.9 V at 232.6 A (10/1000 µs). Its <100 ps response time enables effective ESD (IEC61000-4-2) and EFT (IEC61000-4-4) suppression.
Designed for vertical mounting on PCBs, MXDA3KP7.5AE3 uses a void-free UL94V-0 epoxy package with tin-lead or matte-tin plating per MIL-STD-750 Method 2026. Polarity is defined by dot marking; odd-numbered pins are cathodes, confirming its unidirectional configuration per part nomenclature "A" suffix and absence of "C".
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous DC or peak AC voltage the device blocks without conduction; must exceed circuit's max operating voltage. |
| V(BR) min/max | 8.33–9.21 V @ 1 mA - Voltage range at which avalanche breakdown begins; defines turn-on threshold under transient stress. |
| VC @ IPP | 12.9 V @ 232.6 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream components. |
| PPP | 3000 W @ 10/1000 µs - Peak pulse power handling capacity; validates compliance with IEC61000-4-5 Class 1–4 secondary lightning tests. |
| ID @ VWM | 100 µA - Standby leakage current at rated standoff voltage; low value minimizes quiescent power loss in always-on systems. |
| TJ/TSTG | −55 °C to +150 °C - Operating and storage temperature range; supports deployment in harsh industrial and outdoor environments. |
Pinout & Package
MXDA3KP7.5AE3 is housed in a vertically mounted, transfer-molded thermosetting epoxy package (UL94V-0) weighing ~5 g, with matte-tin-plated terminals solderable per MIL-STD-750 Method 2026. Pin 1 is marked by a dot on the top surface; odd-numbered pins are cathodes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Anode-side connection point; connects to protected line when used in unidirectional clamp-to-rail configuration. |
| Pin 2 | Anode | Reference/ground connection; ties to system ground plane to complete clamping path during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| 3000 W peak pulse power | Enables robust secondary lightning protection per IEC61000-4-5 with 2 Ω, 12 Ω, and 42 Ω source impedances across Class 1–4. |
| 12.9 V clamping at 232.6 A | Provides safe voltage ceiling for 3.3 V and 5 V logic rails, microcontrollers, and Ethernet PHYs during surge events. |
| RoHS-compliant matte-tin plating (e3) | Ensures compatibility with Pb-free reflow profiles and eliminates lead-based contamination risks in final assembly. |
| −55 °C to +150 °C operation | Supports reliability-critical applications including base station power supplies, railway signaling, and motor drive controls. |
Applications
| Industrial Power Supply Protection | Telecom Interface Surge Suppression |
|---|---|
Use Scenario: Protecting 24 V DC input rails in programmable logic controllers (PLCs) against inductive load switching spikes and utility grid surges. IC Role / Device Role / Timing Role: Shunt-type transient voltage suppressor placed between input rail and chassis ground. Use Value: Limits voltage excursion to ≤12.9 V during 3000 W transients, preventing latch-up or permanent damage to DC-DC controllers and monitoring ICs. | Use Scenario: Safeguarding RS-485 transceivers in building automation networks exposed to induced RF and nearby lightning strikes. IC Role / Device Role / Timing Role: Line-to-ground clamping element on differential bus lines, coordinated with common-mode chokes. Use Value: Maintains signal integrity by clamping common-mode surges before they couple into receiver inputs, meeting IEC61000-4-5 Level 4 requirements. |
| Automotive Body Control Module (BCM) | Renewable Energy Inverter DC Link |
Use Scenario: Securing LIN bus and sensor supply lines in BCMs subjected to load dump and ISO 7637-2 pulse 5a/b. IC Role / Device Role / Timing Role: Unidirectional TVS connected anode-to-ground on 12 V distribution nodes. Use Value: Responds in <100 ps to suppress fast-rising transients while sustaining 100 µA leakage-critical for low-power sleep modes. | Use Scenario: Protecting gate drivers and sensing circuits on the high-voltage DC link of solar inverters during grid fault recovery. IC Role / Device Role / Timing Role: Clamp device installed between DC+ and ground near IGBT driver ICs. Use Value: Absorbs 3000 W energy from stray inductance ringing without thermal runaway, validated per MIL-PRF-19500 screening options. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ7.5A | Lower PPP (400 W), smaller SMA package, 13.4 V VC @ 32.4 A IPP. | Suitable for lower-energy ESD/EFT only; not rated for IEC61000-4-5 Class 3/4 lightning. | Select MXDA3KP7.5AE3 where 3000 W surge immunity is mandatory; SMAJ7.5A fits space-constrained designs with modest threat levels. |
| SMCJ7.5A | Same 3000 W rating but SMC package (larger footprint), 13.3 V VC @ 225 A IPP, higher thermal mass. | Better sustained surge dissipation in high-temperature enclosures; less suitable for dense PCB layouts. | Choose MXDA3KP7.5AE3 for vertical mounting and optimized board area; SMCJ7.5A preferred when thermal derating dominates layout constraints. |
Compared with SMAJ7.5A and SMCJ7.5A, MXDA3KP7.5AE3 delivers identical 3000 W surge capability in a compact vertical form factor with tighter clamping (12.9 V vs. 13.3–13.4 V) and RoHS-compliant matte-tin terminations-making it optimal for high-reliability industrial and telecom systems requiring MIL-PRF-19500 screening readiness.
Availability
MXDA3KP7.5AE3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom interface protection, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for MXDA3KP7.5AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The MDA3KP series was developed to deliver military-grade transient suppression in commercial surface-mount packages, targeting applications demanding IEC61000-4-5 compliance, extended temperature operation, and full lot traceability per MIL-PRF-19500.
FAQ
What is the clamping voltage of MXDA3KP7.5AE3 and how is it measured?
The clamping voltage (VC) of MXDA3KP7.5AE3 is 12.9 V, measured at 232.6 A peak pulse current (IPP) under standardized 10/1000 µs double-exponential surge waveform conditions. This value represents the maximum voltage seen across the device during worst-case transient events and is critical for ensuring protected ICs remain within their absolute maximum ratings. MXDA3KP7.5AE3 achieves this performance while maintaining low standby leakage (100 µA at 7.5 V).
Is MXDA3KP7.5AE3 suitable for IEC61000-4-5 Class 4 secondary lightning protection?
Yes, MXDA3KP7.5AE3 is explicitly rated for IEC61000-4-5 Class 4 secondary lightning protection with 42 Ω source impedance, as confirmed in the official Microsemi datasheet RF01243 Rev B. It also supports Class 1–3 testing with 12 Ω and 2 Ω source impedances. Its 3000 W peak pulse power rating and verified clamping behavior make MXDA3KP7.5AE3 appropriate for telecom infrastructure, industrial gateways, and outdoor equipment requiring highest-level surge immunity.
What does the "e3" suffix in MXDA3KP7.5AE3 indicate?
Per Microsemi's part numbering scheme, the "e3" suffix in MXDA3KP7.5AE3 denotes RoHS-compliant matte-tin plating on all external terminals. This ensures full compliance with EU Directive 2011/65/EU and compatibility with Pb-free reflow soldering processes (up to 260 °C for 10 seconds). The e3 marking confirms no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances exceed allowable thresholds-critical for export-controlled and environmentally regulated end products using MXDA3KP7.5AE3.
How does the polarity designation "A" affect the circuit implementation of MXDA3KP7.5AE3?
The "A" suffix in MXDA3KP7.5AE3 specifies unidirectional polarity, meaning the device conducts only in reverse bias (cathode positive relative to anode). In practice, Pin 1 (cathode) connects to the protected line, and Pin 2 (anode) connects to ground. This configuration blocks normal operating voltage but shunts transients above V(BR) to ground. Unlike bidirectional variants (marked "C"), MXDA3KP7.5AE3 must be oriented correctly on PCBs and cannot protect AC or bipolar signals without additional design considerations.
What is the maximum junction temperature rating for MXDA3KP7.5AE3 and how does it impact thermal design?
MXDA3KP7.5AE3 has a maximum junction temperature (TJ) rating of +150 °C and a storage temperature range of −55 °C to +150 °C. This wide range allows operation in high-ambient environments such as enclosed industrial drives or rooftop telecom cabinets. Thermal design must account for power dissipation during repeated surges; derating curves in Figure 3 of RF01243 show that at 100 °C ambient, MXDA3KP7.5AE3 retains ~70% of its 25 °C-rated 3000 W capability-requiring careful layout with adequate copper pour and airflow when deployed in high-duty-cycle applications.
MXDA3KP7.5AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- 16-SMD, Gull Wing
- Series:
- MDA
- Packaging:
- Tube
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 8
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 232.6A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
MXDA3KP7.5AE3 FAQ
1.How can I place an order for MXDA3KP7.5AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MXDA3KP7.5AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MXDA3KP7.5AE3 reliable?
The price and inventory of MXDA3KP7.5AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MXDA3KP7.5AE3 is usually 5 days.
3.What payment methods are accepted for MXDA3KP7.5AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MXDA3KP7.5AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MXDA3KP7.5AE3?
MXDA3KP7.5AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MXDA3KP7.5AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MXDA3KP7.5AE3?
For technical support, including MXDA3KP7.5AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MXDA3KP7.5AE3 requirements.
6.How does Aetrix verify that MXDA3KP7.5AE3 is sourced from the original manufacturer or authorized distributors?
All MXDA3KP7.5AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MXDA3KP7.5AE3 meets industry standards.
7.What is the process for return or replacement of MXDA3KP7.5AE3?
All MXDA3KP7.5AE3 units undergo pre-shipment inspection (PSI). If there is an issue with MXDA3KP7.5AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MXDA3KP7.5AE3 part is unused and in its original packaging.
Return procedure for MXDA3KP7.5AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MXDA3KP7.5AE3 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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