Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology MXLDA3KP11AE3

Part No.:
MXLDA3KP11AE3
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
16-SMD, Gull Wing
Datasheet:
AetrixMXLDA3KP11AE3.pdf
Description:
UNI-DIRECTIONAL TVS_16L DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,062

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MXLDA3KP11AE3 from Microsemi is a unidirectional 3000 W surface-mount transient voltage suppressor (TVS) array with 11 V standoff voltage (VWM), 12.2–13.5 V breakdown voltage (V(BR)), and 18.2 V maximum clamping voltage (VC) at 164.8 A peak pulse current. It provides secondary lightning protection per IEC61000-4-5 (42 Ω, Class 1–4), ESD/EFT suppression per IEC61000-4-2/4-4, and inductive switching transient protection in DC power rails.

For engineers reviewing the MXLDA3KP11AE3 datasheet, MXLDA3KP11AE3 pinout, MXLDA3KP11AE3 application, or MXLDA3KP11AE3 equivalent, key selection criteria include standoff voltage matching system peak operating voltage, clamping voltage margin relative to protected IC absolute maximum ratings, surge current capability under 10/1000 µs waveform, RoHS-compliant e3 termination, and MIL-PRF-19500 upscreening eligibility.

Technical Context

The MXLDA3KP11AE3 operates as a unidirectional avalanche diode-based TVS, triggered when reverse voltage exceeds its 12.2–13.5 V breakdown range. Its <100 ps response time enables effective suppression of ESD events and fast transients before downstream components are stressed.

It is rated for 3000 W peak pulse power (10/1000 µs), with clamping limited to 18.2 V at 164.8 A IPP, and exhibits ≤5 µA standby current at 11 V VWM. The device supports operation from –55 °C to +150 °C and features void-free UL94V-0 epoxy packaging with tin-lead or matte-tin terminations.

Key Specifications

ParameterValue and Actual Design Meaning
VWM11 V - Maximum continuous DC or peak AC voltage the device blocks without conduction.
V(BR) min/max12.2–13.5 V @ 1 mA - Confirmed avalanche onset range; ensures reliable triggering above system operating voltage.
VC @ IPP18.2 V @ 164.8 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress on protected load.
PPP3000 W @ 10/1000 µs - Peak transient energy handling capacity; validated per Figure 1 derating curve.
ID @ VWM≤5 µA - Leakage current at rated standoff; negligible power loss in high-impedance monitoring or bias circuits.
TJ/TSTG–55 to +150 °C - Extended temperature range supports industrial, aerospace, and automotive under-hood applications.

Pinout & Package

MXLDA3KP11AE3 uses a 2-pin DO-214AB (SMC) package with cathode-anode polarity: Pin 1 is cathode (marked by dot), Pin 2 is anode. Body dimensions: 21.03–22.05 mm × 6.86–7.87 mm × 8.64–9.65 mm (L×W×H).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1CathodeConnected to protected line; conducts surge current to ground/anode when Vreverse > V(BR).
Pin 2AnodeTypically tied to system ground or low-impedance return path; completes conduction loop during clamping.

Key Features

FeatureDesign Value
3000 W peak pulse ratingValidated for 10/1000 µs waveform - handles high-energy lightning-induced surges without failure.
RoHS-compliant e3 terminationMatte-tin plating per MIL-STD-750 Method 2026 - ensures solderability and long-term intermetallic stability.
MIL-PRF-19500 upscreening optionAvailable with wafer/lot traceability and 3σ screening on ID - meets high-reliability requirements for defense/aerospace programs.
Moisture sensitivity Level 1No dry pack required per J-STD-020B - simplifies SMT handling and eliminates bake-out steps pre-reflow.

Applications

Industrial Motor DrivesTelecom Power Feeds

Use Scenario: DC bus lines in variable-frequency drives exposed to inductive kickback from contactor switching and regenerative braking.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between +BUS and GND to clamp negative-going transients below MOSFET/GaN FET drain-source breakdown limits.

Use Value: Limits clamping voltage to 18.2 V, preserving 20 V-rated gate drivers and enabling use of lower-voltage, higher-efficiency power switches.

Use Scenario: -48 V DC power input stage of telecom base station equipment subject to lightning-induced surges on outdoor feeder lines.

IC Role / Device Role / Timing Role: Primary overvoltage protector on the DC input rail upstream of DC/DC converters and PMICs.

Use Value: Withstands 3000 W surges per IEC61000-4-5 (42 Ω source), preventing latch-up or burnout in downstream POL regulators.

Railway Signaling InterfacesMedical Imaging Power Supplies

Use Scenario: 24 V control signal lines in track-side signaling units subjected to EFT bursts and coupling from adjacent traction power cables.

IC Role / Device Role / Timing Role: Point-of-load TVS on isolated CAN or RS-485 interface power rails to suppress coupled transients.

Use Value: Sub-100 ps response captures fast EFT edges (5 ns rise time), limiting voltage overshoot to <18.2 V and maintaining signal integrity across isolation barriers.

Use Scenario: High-voltage DC link (±15 V to ±24 V) in CT/MRI detector module power supplies where transient immunity directly impacts image noise floor.

IC Role / Device Role / Timing Role: Secondary protection element after primary MOVs, providing precise clamping to protect low-noise LDOs and ADC reference buffers.

Use Value: 5 µA max leakage at 11 V VWM avoids loading precision references; tight V(BR) tolerance (±5%) ensures consistent trip threshold across production lots.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ11A600 W PPP rating, same VWM/V(BR)/VC but lower IPP (59.5 A); DO-214AC (SMA) package, smaller footprint.Not suitable for IEC61000-4-5 Class 4 or high-energy inductive switching; limited to ESD/EFT and low-energy transients.Select SMAJ11A only when board space is constrained and surge energy remains below 600 W.
1.5KE11A1500 W PPP, axial-leaded DO-15 package; higher thermal resistance and manual assembly requirement.Not compatible with automated SMT lines; unsuitable for high-density PCBs or vibration-prone environments due to leaded construction.Choose 1.5KE11A only for legacy through-hole designs or prototyping where reflow compatibility is not required.

Compared with SMAJ11A and 1.5KE11A, MXLDA3KP11AE3 delivers double the surge energy handling of the former and twice the power rating of the latter while maintaining SMT compatibility, making it the sole choice for new industrial and telecom designs requiring full IEC61000-4-5 Class 4 compliance.

Availability

MXLDA3KP11AE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power feeds, railway signaling interfaces, and medical imaging power supplies requiring stable component supply and long-term lifecycle support.

Supply support for MXLDA3KP11AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for aerospace, defense, and industrial markets.

The MDA3KP series was designed specifically for high-energy transient suppression in mission-critical DC power systems where failure is not an option - emphasizing surge robustness, temperature stability, and qualification-grade traceability.

FAQ

What is the clamping voltage of MXLDA3KP11AE3 at its rated peak pulse current?

The MXLDA3KP11AE3 has a maximum clamping voltage (VC) of 18.2 V at its rated peak pulse current (IPP) of 164.8 A under 10/1000 µs waveform conditions. This value is measured per standard test methods defined in the datasheet and represents the upper bound of voltage seen by protected circuitry during worst-case surge events. Designers must ensure this clamping level remains below the absolute maximum ratings of downstream components.

Is MXLDA3KP11AE3 RoHS compliant and what does the 'e3' suffix indicate?

Yes, MXLDA3KP11AE3 is RoHS compliant. The 'e3' suffix explicitly denotes matte-tin termination meeting JEDEC/IPC RoHS requirements, with no lead or other restricted substances exceeding allowable thresholds. This plating also complies with MIL-STD-750 Method 2026 for solderability and intermetallic reliability, supporting both lead-free and SnPb reflow profiles without degradation.

Can MXLDA3KP11AE3 be used for bidirectional transient protection?

No, MXLDA3KP11AE3 is unidirectional. Its part number lacks the 'C' suffix (e.g., MDA3KP11CE3), which designates bidirectional construction. Using MXLDA3KP11AE3 in AC or bipolar signal paths will result in forward conduction during negative half-cycles, potentially damaging the device or circuit. For bidirectional protection at 11 V, specify MDA3KP11CE3 instead.

What is the maximum operating temperature range for MXLDA3KP11AE3?

MXLDA3KP11AE3 is rated for junction and storage temperatures from –55 °C to +150 °C. This extended range is validated per manufacturer testing and supports deployment in harsh environments such as under-hood automotive ECUs, railway traction control cabinets, and outdoor telecom enclosures without derating until ambient exceeds 70 °C (per Figure 3 derating curve).

Does MXLDA3KP11AE3 require moisture-sensitive handling prior to reflow?

No, MXLDA3KP11AE3 has IPC/JEDEC J-STD-020B moisture sensitivity level (MSL) 1, meaning it may be stored indefinitely at ≤30 °C/60% RH without dry packing or baking. This eliminates pre-reflow bake cycles, reduces manufacturing overhead, and avoids thermal stress on the epoxy body - a key advantage over MSL 2a/3 devices in high-volume SMT lines.

MXLDA3KP11AE3 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
16-SMD, Gull Wing
Series:
MDA
Packaging:
Tube
Product Status:
Active
Type:
Zener
Unidirectional Channels:
8
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
164.8A
Power - Peak Pulse:
3000W (3kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
-

MXLDA3KP11AE3 FAQ

1.How can I place an order for MXLDA3KP11AE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for MXLDA3KP11AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MXLDA3KP11AE3 reliable?

The price and inventory of MXLDA3KP11AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MXLDA3KP11AE3 is usually 5 days.

3.What payment methods are accepted for MXLDA3KP11AE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MXLDA3KP11AE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MXLDA3KP11AE3?

MXLDA3KP11AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MXLDA3KP11AE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MXLDA3KP11AE3?

For technical support, including MXLDA3KP11AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MXLDA3KP11AE3 requirements.

6.How does Aetrix verify that MXLDA3KP11AE3 is sourced from the original manufacturer or authorized distributors?

All MXLDA3KP11AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MXLDA3KP11AE3 meets industry standards.

7.What is the process for return or replacement of MXLDA3KP11AE3?

All MXLDA3KP11AE3 units undergo pre-shipment inspection (PSI). If there is an issue with MXLDA3KP11AE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MXLDA3KP11AE3 part is unused and in its original packaging.

Return procedure for MXLDA3KP11AE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MXLDA3KP11AE3 Tags

  • MXLDA3KP11AE3
  • MXLDA3KP11AE3 PDF
  • MXLDA3KP11AE3 Datasheet
  • MXLDA3KP11AE3 Specifications
  • MXLDA3KP11AE3 Images
  • Microchip Technology
  • Microchip Technology MXLDA3KP11AE3
  • Buy MXLDA3KP11AE3
  • MXLDA3KP11AE3 Price
  • MXLDA3KP11AE3 Distributor
  • MXLDA3KP11AE3 Supplier
  • MXLDA3KP11AE3 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER