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Microchip Technology MXLDA3KP33CAE3
- Part No.:
- MXLDA3KP33CAE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- 16-SMD, Gull Wing
- Datasheet:
-
MXLDA3KP33CAE3.pdf
- Description:
- BI-DIRECTIONAL TVS_16L DIP
- Quantity:
- Payment:
- Shipping:
Inventory:8,098
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Product details
Overview
MXLDA3KP33CAE3 from Microsemi is a bidirectional 3000 W transient voltage suppressor (TVS) array in a surface-mount DO-214AB package, designed for secondary lightning protection per IEC61000-4-5 with 12 Ω and 42 Ω source impedances, ESD/EFT suppression per IEC61000-4-2/4-4, and inductive switching transient clamping. It features 33 V standoff voltage (VWM), 36.7–40.6 V breakdown range (V(BR)), 53.3 V max clamping voltage (VC) at 56.2 A peak pulse current (IPP), and operates from –55 °C to +150 °C.
For engineers reviewing the MXLDA3KP33CAE3 datasheet, MXLDA3KP33CAE3 pinout, MXLDA3KP33CAE3 application, or MXLDA3KP33CAE3 equivalent, this device serves as a high-reliability, RoHS-compliant TVS for telecom power interfaces, industrial control I/O protection, and automotive body electronics where fast clamping (<5 ns response), 3000 W surge handling, and bidirectional polarity are required.
Technical Context
The MXLDA3KP33CAE3 is a monolithic dual-diode TVS array configured in a common-cathode arrangement for bidirectional protection across a single line pair. Its silicon avalanche structure delivers sub-5 ns response time and clamps transients up to 3000 W under 10/1000 µs waveform conditions.
It meets MIL-PRF-19500 screening options for high-reliability applications and supports secondary lightning protection classes 1–3 (42 Ω), 1–4 (12 Ω), and class 4 (2 Ω) per IEC61000-4-5 - with specific class coverage confirmed for MXLDA3KP33CAE3 in the MDA3KPxxC family documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous DC or peak AC operating voltage before conduction begins |
| V(BR) min/max | 36.7–40.6 V @ 1 mA - guaranteed avalanche onset range defining minimum protection threshold |
| VC @ IPP | 53.3 V @ 56.2 A - maximum clamped voltage during 10/1000 µs surge, limiting downstream stress |
| PPP | 3000 W @ 10/1000 µs - peak transient power dissipation capability without failure |
| TJ range | –55 °C to +150 °C - operational junction temperature range enabling use in harsh environments |
| ID @ VWM | ≤2 µA - ultra-low leakage ensuring minimal standby power impact on protected circuits |
| Response time | <5 ns - enables effective suppression of ESD (IEC61000-4-2) and EFT (IEC61000-4-4) |
Pinout & Package
MXLDA3KP33CAE3 uses a DO-214AB (SMC) plastic package with void-free UL94V-0 epoxy body, matte-tin plating, and polarity marked by a dot indicating Pin 1 (cathode). Weight ≈5 g; moisture sensitivity level = 1 (no dry pack required).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode (of first diode) | Common cathode node for bidirectional configuration; connects to ground or reference plane |
| Pin 2 | Anode (of first diode) / Cathode (of second diode) | Center tap node - forms symmetrical clamping path between Line+ and Line− |
| Pin 3 | Anode (of second diode) | Second cathode connection point; completes dual-diode anti-parallel path for bidirectional operation |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables symmetric overvoltage protection on differential or single-ended lines without polarity constraints |
| 3000 W peak pulse rating | Withstands severe surges including secondary lightning (IEC61000-4-5) and inductive switch-off events |
| Sub-5 ns response time | Provides effective suppression of fast ESD transients (±8 kV contact, ±15 kV air per IEC61000-4-2) |
| MIL-PRF-19500 screening option | Supports high-reliability programs requiring lot traceability, 3σ ID screening, and wafer-level conformance |
| RoHS-compliant (e3) | Meets lead-free assembly requirements with annealed matte-tin terminations compatible with SnPb and Pb-free reflow |
Applications
| Telecom Power Feeds | Industrial PLC I/O Ports |
|---|---|
Use Scenario: Protection of 48 V DC power inputs in remote radio units and DSLAM line cards against induced surges and lightning-induced ring waves. IC Role / Device Role / Timing Role: Bidirectional TVS array clamping both positive and negative transients on the same line pair. Use Value: Limits voltage to ≤53.3 V during 56.2 A surges, preventing damage to DC-DC converters and PMICs downstream. | Use Scenario: Guarding analog and digital input/output channels in programmable logic controllers exposed to motor drive noise and field wiring transients. IC Role / Device Role / Timing Role: Fast-response transient suppressor placed at connector interface to shunt energy before reaching isolation barriers or signal conditioners. Use Value: Sub-5 ns response ensures clamping occurs before ESD/EFT pulses propagate into sensitive FPGA or microcontroller GPIOs. |
| Automotive Body Control Modules | Medical Equipment Signal Lines |
Use Scenario: Protecting LIN bus and sensor supply lines in BCMs from load dump and alternator ripple-induced spikes. IC Role / Device Role / Timing Role: Standoff-rated TVS maintaining low leakage (<2 µA) while clamping 3000 W transients to safe levels. Use Value: 33 V VWM matches typical 24 V automotive systems; 150 °C max TJ supports under-hood placement near engine compartments. | Use Scenario: Safeguarding isolated patient-connected analog front-ends (e.g., ECG, EEG leads) from electrostatic discharge and defibrillator-induced transients. IC Role / Device Role / Timing Role: High-isolation, low-leakage TVS placed at barrier boundary to prevent fault current injection into patient circuits. Use Value: UL94V-0 package and <2 µA ID ensure compliance with IEC60601-1 creepage/clearance and leakage current safety limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33CA | 600 W PPP rating, SMB package, 53.3 V VC @ 12.3 A IPP - lower surge capacity and smaller thermal mass | Suitable for consumer-grade or space-constrained designs where 3000 W is not required | Select SMBJ33CA only when system-level surge testing does not exceed Class 2 (IEC61000-4-5, 42 Ω) |
| SMCJ33CA | 1500 W PPP rating, SMC package, 53.3 V VC @ 28.1 A IPP - half the power rating of MXLDA3KP33CAE3 | Applicable in mid-tier industrial equipment where cost and footprint are prioritized over extreme surge margin | Choose SMCJ33CA if design validation confirms worst-case transients remain below 1500 W |
Compared with SMBJ33CA and SMCJ33CA, MXLDA3KP33CAE3 provides double the surge power margin and full Class 3/4 lightning compliance per IEC61000-4-5 - critical for infrastructure-grade telecom, rail signaling, and military subsystems requiring extended reliability screening.
Availability
MXLDA3KP33CAE3 is available at Aetrix Electronics and suitable for telecom power feeds, industrial PLC I/O ports, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable high-reliability sourcing.
Supply support for MXLDA3KP33CAE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for aerospace, defense, and industrial markets.
The MDA3KP series was developed specifically for mission-critical surge protection in infrastructure and transportation systems where MIL-PRF-19500 screening, wide temperature operation, and 3000 W transient immunity are mandatory.
FAQ
What is the clamping voltage of MXLDA3KP33CAE3 at its rated peak pulse current?
The MXLDA3KP33CAE3 has a maximum clamping voltage (VC) of 53.3 V at its rated peak pulse current (IPP) of 56.2 A under 10/1000 µs waveform conditions. This value is measured across the device terminals during standardized surge testing and defines the upper voltage limit imposed on protected circuitry during transient events. The MXLDA3KP33CAE3 maintains this clamping performance across its full operating temperature range.
Is MXLDA3KP33CAE3 RoHS-compliant and what does the 'e3' suffix indicate?
Yes, MXLDA3KP33CAE3 is RoHS-compliant, as confirmed by the 'e3' suffix in its part number. Per Microsemi's nomenclature, 'e3' denotes lead-free, annealed matte-tin plating compliant with JEDEC J-STD-020B Level 1 moisture sensitivity - eliminating dry-pack requirements and supporting both SnPb and Pb-free reflow profiles. The MXLDA3KP33CAE3 meets all substance restrictions defined in Directive 2011/65/EU.
How does the bidirectional configuration of MXLDA3KP33CAE3 affect its circuit implementation?
The MXLDA3KP33CAE3 uses an internal dual-diode anti-parallel structure with Pin 1 and Pin 3 as cathodes and Pin 2 as the common anode node, enabling symmetrical clamping for both polarities on a single line. This eliminates the need for external polarity selection and allows direct placement across differential pairs or unidirectional lines subject to reverse transients. The MXLDA3KP33CAE3's layout supports straightforward integration without additional biasing or orientation constraints.
Can MXLDA3KP33CAE3 be used for IEC61000-4-5 Class 4 lightning protection?
Yes, MXLDA3KP33CAE3 is qualified for IEC61000-4-5 Class 4 secondary lightning protection when tested with a 12 Ω source impedance, as documented in the MDA3KPxxC family specification. It is not rated for Class 4 under 2 Ω or 42 Ω source impedances. System-level validation must confirm that the full protection network - including PCB layout, grounding, and upstream filtering - sustains the 42 A test current required for Class 4 at 12 Ω. The MXLDA3KP33CAE3 itself meets the device-level clamping and energy absorption requirements.
What is the maximum steady-state power dissipation of MXLDA3KP33CAE3 at 100 °C ambient?
MXLDA3KP33CAE3 does not specify steady-state power dissipation because it is a transient-only device - it conducts only during surge events and draws negligible current (<2 µA) at its 33 V standoff voltage. Its thermal design relies on short-duration pulse energy absorption (3000 W peak, 10/1000 µs), not continuous power handling. Derating curves in the datasheet apply only to peak pulse power versus ambient temperature; no DC power rating is defined. The MXLDA3KP33CAE3 remains inactive under normal operation.
MXLDA3KP33CAE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- 16-SMD, Gull Wing
- Series:
- MDA
- Packaging:
- Tube
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 8
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 56.2A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
MXLDA3KP33CAE3 FAQ
1.How can I place an order for MXLDA3KP33CAE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MXLDA3KP33CAE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MXLDA3KP33CAE3 reliable?
The price and inventory of MXLDA3KP33CAE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MXLDA3KP33CAE3 is usually 5 days.
3.What payment methods are accepted for MXLDA3KP33CAE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MXLDA3KP33CAE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MXLDA3KP33CAE3?
MXLDA3KP33CAE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MXLDA3KP33CAE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MXLDA3KP33CAE3?
For technical support, including MXLDA3KP33CAE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MXLDA3KP33CAE3 requirements.
6.How does Aetrix verify that MXLDA3KP33CAE3 is sourced from the original manufacturer or authorized distributors?
All MXLDA3KP33CAE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MXLDA3KP33CAE3 meets industry standards.
7.What is the process for return or replacement of MXLDA3KP33CAE3?
All MXLDA3KP33CAE3 units undergo pre-shipment inspection (PSI). If there is an issue with MXLDA3KP33CAE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MXLDA3KP33CAE3 part is unused and in its original packaging.
Return procedure for MXLDA3KP33CAE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MXLDA3KP33CAE3 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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