Microchip Technology MXPLAD18KP100AE3

Overview

MXPLAD18KP100AE3 from Microsemi is a unidirectional surface-mount transient voltage suppressor (TVS) designed for high-energy surge protection in aerospace and automotive systems. It delivers 18,000 W peak pulse power at 10/1000 μs, clamps at ≤162 V under 112 A peak impulse current, and features a 100 V reverse standoff voltage (VWM) with ±5% breakdown tolerance (111–123 V). Its low-profile thermoset epoxy package enables robust lightning protection per RTCA DO-160 Section 22 and secondary surge suppression per IEC 61000-4-5.

For engineers reviewing the MXPLAD18KP100AE3 datasheet, MXPLAD18KP100AE3 pinout, MXPLAD18KP100AE3 application, or MXPLAD18KP100AE3 equivalent, key selection criteria include its 100 V VWM rating, 162 V max clamping voltage at IPP = 112 A, RoHS-compliant e3 plating, thermal resistance of 0.7 °C/W junction-to-case, and qualification to AEC-Q101 for automotive reliability.

Technical Context

This TVS diode operates as a unidirectional clamping device with cathode on the metal base (package bottom), requiring correct PCB orientation for polarity-sensitive circuits. Its silicon avalanche structure provides fast response (<100 ps) and stable breakdown behavior across -55°C to +150°C operating range.

It is rated for 18 kW peak pulse power under standardized 10/1000 μs waveform, with derated steady-state dissipation (2.5 W at TA = 25°C, 71 W at TC = 100°C) and validated thermal performance via RθJC = 0.7 °C/W - enabling direct heatsink mounting for high-repetition transients.

Key Specifications

Pinout & Package

MXPLAD18KP100AE3 uses a 2-terminal surface-mount package with cathode connected to the exposed metal base (bottom side), anode accessible via top-side metallization. The package conforms to JEDEC MO-239 (similar to SMC) with dimensions: 11.94 × 5.85 × 2.44 mm (L × W × H), and recommended pad layout per RF01215 Rev B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMBJ100A and SMCJ100A, MXPLAD18KP100AE3 provides 30× higher peak pulse power, certified aerospace/automotive qualifications, and a metal-base thermal path enabling direct heatsink attachment - making it uniquely suited for mission-critical, multi-stroke surge environments.

Availability

MXPLAD18KP100AE3 is available at Aetrix Electronics and suitable for aircraft power distribution, automotive load dump protection, and industrial motor drive inputs requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for MXPLAD18KP100AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability semiconductor solutions for aerospace, defense, and industrial markets, with emphasis on radiation-hardened ICs, timing devices, and ruggedized discrete components.

The MPLAD family was developed specifically for high-energy transient suppression in safety-critical platforms, combining AEC-Q101 qualification, RTCA DO-160 compliance, and metal-base thermal architecture to meet stringent DO-160 Section 22 and IEC 61000-4-5 requirements.

FAQ

What is the clamping voltage specification for MXPLAD18KP100AE3?

The MXPLAD18KP100AE3 has a maximum clamping voltage (VC) of 162 V at 112 A peak pulse current (IPP) under 10/1000 μs waveform conditions. This value represents the worst-case voltage imposed on protected circuitry during a full-rated surge event and is guaranteed across the operating temperature range per RF01215 Rev B.

Is MXPLAD18KP100AE3 qualified for automotive applications?

Yes, MXPLAD18KP100AE3 is qualified to AEC-Q101 for automotive use. It undergoes stress testing including temperature cycling, humidity bias, and mechanical shock - validating reliability in engine control units, battery management systems, and ADAS power domains where load dump and jump-start transients occur.

How is polarity identified on the MXPLAD18KP100AE3 package?

The cathode of MXPLAD18KP100AE3 is located on the exposed metal base (bottom side) of the package. The anode is accessible via the top-side metallization. Correct orientation requires mounting the device with the metal base soldered to a grounded thermal pad - polarity must be verified using the body marking and PCB silkscreen to prevent reverse-bias damage.

Does MXPLAD18KP100AE3 meet RTCA DO-160 lightning protection standards?

Yes, MXPLAD18KP100AE3 is validated for RTCA DO-160F Section 22 lightning-induced transient protection. It meets Level 4 and Level 5 pin injection requirements for Waveform 4 (6.4/69 μs) and Waveform 5A (40/120 μs), supporting use in certified avionics power distribution and sensor interface modules.

What is the thermal resistance and heatsinking requirement for MXPLAD18KP100AE3?

MXPLAD18KP100AE3 has a junction-to-case thermal resistance (RθJC) of 0.7 °C/W. To maintain safe junction temperatures during repetitive surges, the metal base must be soldered to a thermally robust PCB copper area or external heatsink. Derating curves in RF01215 Rev B show PPP drops to 10 kW at TC = 125°C, confirming need for active thermal management in high-duty-cycle applications.