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onsemi NIS1161MTTAG
- Part No.:
- NIS1161MTTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
NIS1161MTTAG.pdf
- Description:
- TVS DIODE 5VWM 26VC 6WDFN
- Quantity:
- Payment:
- Shipping:
Inventory:10,510
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Product details
Overview
NIS1161MTTAG from onsemi is an automotive-grade ESD protection device with integrated short-to-battery blocking MOSFETs, designed for high-speed differential data lines including USB 2.0 and LVDS. It features 0.65 pF typical junction capacitance (I/O to GND), ±8 kV IEC 61000-4-2 contact ESD rating, 16 V reverse working voltage, 30 V drain-to-source breakdown voltage, and operates across −55 °C to +150 °C junction temperature range - enabling robust signal integrity in infotainment and ADAS interfaces.
For engineers reviewing the NIS1161MTTAG datasheet, pinout, applications, or equivalent options, this device delivers verified short-to-battery blocking, ultra-low capacitive loading, AEC-Q101 qualification, flow-through WDFN6 package layout compatibility, and clamping performance validated per ISO 10605 and IEC 61000-4-2 Level 4.
Technical Context
The NIS1161MTTAG integrates dual N-channel MOSFETs in a back-to-back configuration to provide active short-to-battery (STB) and short-to-USB VBUS blocking during fault conditions while maintaining low RDS(on) (1.4 Ω typ. at VGS = 4.5 V) for minimal signal distortion. Its gate threshold voltage (0.1–1.5 V) supports both 3.3 V and 5 V logic drive levels.
It operates in two distinct modes: steady-state linear conduction for signal pass-through, and saturation-region clamping during STB events - where source voltage self-adjusts to VGS − VTH, limiting termination current and clamping voltage simultaneously. The 5 GHz 3 dB bandwidth confirms suitability for USB 2.0 (480 Mbps) signaling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 16 V - defines maximum continuous DC voltage the device blocks between I/O and GND without leakage degradation |
| Junction Capacitance (I/O to GND) | 0.65 pF typical - ensures minimal signal attenuation and impedance mismatch on USB 2.0/LVDS differential pairs |
| ESD Clamping Voltage (IEC 61000-4-2 ±8 kV contact) | Measured waveform peak ≤26 V - limits transient overvoltage seen by downstream transceiver during ESD event |
| Drain-to-Source On Resistance | 1.4 Ω typical at VGS = 4.5 V - maintains <1% signal loss and preserves eye diagram integrity on high-speed data lanes |
| Operating Junction Temperature Range | −55 °C to +150 °C - meets automotive under-hood and infotainment module thermal requirements per AEC-Q101 |
| Short-to-Battery Blocking | Active MOSFET-based protection up to 16 VDC - prevents damage from battery feed-through faults in vehicle wiring harnesses |
| Package | WDFN6 2.0 × 2.0 mm, 0.65 mm pitch - enables matched trace routing and compact PCB layout for differential pair symmetry |
Pinout & Package
Package: WDFN6 (Case 511CB), 2.0 mm × 2.0 mm, 0.65 mm pitch, wettable flanks, exposed thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D+ HOST) | Host-side D+ signal terminal | Connects to USB/LVDS host transceiver D+ line; forms one half of protected differential pair |
| Pin 2 (VDD) | Power supply input | Provides gate bias for internal MOSFETs; must be connected to stable 5 V or 3.3 V rail |
| Pin 3 (D− HOST) | Host-side D− signal terminal | Connects to USB/LVDS host transceiver D− line; paired with Pin 1 for differential operation |
| Pin 4 (D+) | Device-side D+ signal terminal | Connects to connector-facing D+ line; completes flow-through path with Pin 1 |
| Pin 5 (GND) | Signal and power ground reference | Common return for ESD current paths and MOSFET substrate; must be low-inductance connection to system ground plane |
| Pin 6 (D−) | Device-side D− signal terminal | Connects to connector-facing D− line; completes flow-through path with Pin 3 |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low junction capacitance | 0.65 pF typical (I/O to GND) - preserves signal rise/fall times and minimizes intersymbol interference on 480 Mbps USB 2.0 links |
| Integrated short-to-battery blocking | Active MOSFET-based protection up to 16 V - eliminates need for external TVS + series FET solutions in automotive USB ports |
| AEC-Q101 qualification | Qualified per stress test standard for automotive discrete semiconductors - supports PPAP documentation for Tier 1 OEM programs |
| Flow-through pinout | Pins 1/3 (host) and 4/6 (device) aligned linearly - enables straight PCB trace routing with matched lengths for controlled 90 Ω differential impedance |
| Wettable flanks package | Side-wettable terminations on all six pins - enables automated optical inspection (AOI) of solder joint quality in SMT assembly |
Applications
| Automotive USB 2.0 Ports | LVDS Camera Links |
|---|---|
Use Scenario: Protecting USB 2.0 data lines in center-stack infotainment systems exposed to ESD during service and short-to-battery faults from adjacent 12 V wiring. IC Role / Device Role / Timing Role: Bidirectional ESD clamp and active short-to-battery blocker placed between USB connector and SoC transceiver. Use Value: Prevents permanent damage to USB PHY while maintaining <10 ps skew between D+/D− due to matched 0.65 pF capacitance and flow-through layout. |
Use Scenario: Safeguarding LVDS video links from rear-view or surround-view cameras subject to ESD discharge and battery feed-through in parking mode. IC Role / Device Role / Timing Role: High-speed signal protector with sub-1.5 V gate threshold enabling direct 3.3 V GPIO control without level shifters. Use Value: Enables reliable 1.2 Gbps video transmission with <0.5 dB insertion loss at 600 MHz due to 5 GHz bandwidth and <1.4 Ω RDS(on). |
| Telematics Control Units | ADAS Sensor Interfaces |
Use Scenario: Securing CAN-FD auxiliary data channels and USB diagnostics ports in telematics modules mounted near vehicle battery rails. IC Role / Device Role / Timing Role: Dual-function protector handling both ESD transients and sustained 12–16 V shorts in harsh electrical environments. Use Value: Eliminates need for separate TVS diodes and discrete MOSFETs, reducing BOM count by two components and saving 3.2 mm² PCB area. |
Use Scenario: Shielding radar and ultrasonic sensor data interfaces from ESD during manufacturing and field operation in engine bay or bumper zones. IC Role / Device Role / Timing Role: Low-capacitance guard for high-frequency analog/digital sensor outputs requiring <1 pF loading to avoid gain error or phase shift. Use Value: Maintains sensor signal fidelity with 1.0% capacitance matching between D+/D− paths, preventing common-mode noise generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection with short-to-battery blocking applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2EUSB30DRYR | 0.7 pF capacitance, no integrated short-to-battery MOSFETs - requires external FET for STB protection | Limited to ESD-only use cases; not qualified to AEC-Q101 | Select only if STB blocking is handled elsewhere in design and automotive qualification is not required |
| SP1002-01WTG | 0.3 pF capacitance, unidirectional TVS array - lacks active MOSFET switching and battery fault blocking | Suitable for non-automotive consumer USB ports; no 16 V short-to-battery capability | Choose when lowest possible capacitance is critical and battery fault protection is unnecessary |
Compared with NIS1161MTTAG, TPD2EUSB30DRYR provides slightly higher capacitance and omits STB blocking, requiring additional components for automotive compliance; SP1002-01WTG offers lower capacitance but no active fault management - making NIS1161MTTAG the only single-chip AEC-Q101 solution integrating both ESD clamping and short-to-battery protection for USB 2.0/LVDS.
Availability
NIS1161MTTAG is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS camera modules, and telematics control units requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant ESD protection.
Supply support for NIS1161MTTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NIx1161 series was developed specifically to address automotive high-speed interface protection challenges - combining ESD immunity, short-to-battery blocking, and ultra-low capacitance in a single WDFN package for USB 2.0 and LVDS signal integrity preservation.
FAQ
What is the primary function of the NIS1161MTTAG in an automotive USB 2.0 interface?
The NIS1161MTTAG serves as a dual-function protector in automotive USB 2.0 interfaces: it clamps ESD transients per IEC 61000-4-2 Level 4 (±8 kV contact) and actively blocks short-to-battery faults up to 16 VDC using integrated MOSFETs. Its 0.65 pF capacitance ensures minimal signal degradation on 480 Mbps data lines, and its flow-through WDFN6 pinout supports matched-length PCB routing for differential pair integrity. This makes NIS1161MTTAG essential for protecting USB PHYs in infotainment head units exposed to harsh vehicle electrical environments.
Does the NIS1161MTTAG require an external power supply, and what voltage is supported?
Yes, the NIS1161MTTAG requires an external VDD supply connected to Pin 2. It supports 3.3 V and 5 V logic drive levels due to its low gate threshold voltage (0.1–1.5 V), ensuring sufficient VGS margin for reliable MOSFET turn-on during normal operation and short-to-battery events. The device draws negligible quiescent current (<1 µA), and VDD must be stable and decoupled with a 100 nF capacitor near Pin 2. This VDD rail powers the internal gate control circuitry and is mandatory for short-to-battery blocking functionality in NIS1161MTTAG.
How does the NIS1161MTTAG achieve short-to-battery protection without adding series resistance to the signal path?
The NIS1161MTTAG achieves short-to-battery protection using back-to-back N-channel MOSFETs configured to conduct in linear mode during normal operation - resulting in very low RDS(on) (1.4 Ω typical at VGS = 4.5 V) and negligible signal attenuation. During a short-to-battery event, the MOSFETs transition into saturation, clamping the source voltage to VGS − VTH and limiting fault current without inserting passive resistance. This active clamping preserves signal integrity far better than series resistor + TVS approaches, and is a core differentiator of NIS1161MTTAG versus conventional ESD arrays.
Is the NIS1161MTTAG pin-compatible with other devices in the NIx1161 family, such as NIV1161MTTAG?
Yes, the NIS1161MTTAG is pin-compatible with NIV1161MTTAG and other members of the NIx1161 family sharing the WDFN6 (Case 511CB) package - including identical pin 1–6 assignments, mechanical footprint, and thermal pad layout. Both devices use the same flow-through configuration (D+ HOST/D− HOST on Pins 1/3; D+/D− on Pins 4/6; VDD on Pin 2; GND on Pin 5). This allows direct substitution in existing designs, though users must verify that the NIS1161MTTAG's specific automotive qualification and marking meet program requirements, as NIV1161MTTAG carries additional wettable flank and AOI optimization features.
What PCB layout guidelines are critical for optimal ESD performance of the NIS1161MTTAG?
For optimal ESD performance, place the NIS1161MTTAG within 3 mm of the USB/LVDS connector to minimize inductance in the ESD current path to ground. Route D+/D− traces with equal length, 90 Ω differential impedance, and no stubs or vias between the device and connector. Connect the exposed thermal pad to a solid ground plane using ≥4 thermal vias (0.3 mm diameter). Avoid routing other signals near the protected pair, and place ground planes beneath both sides of the differential route. These practices ensure the NIS1161MTTAG's clamping response remains effective and preserves signal integrity - especially critical for maintaining USB 2.0 eye diagrams and LVDS jitter budgets.
NIS1161MTTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-WDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 16.5V
- Voltage - Clamping (Max) @ Ipp:
- 26V
- Current - Peak Pulse (10/1000µs):
- 1A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- HDMI
- Capacitance @ Frequency:
- 0.65pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WDFN (2x2)
NIS1161MTTAG FAQ
1.How can I place an order for NIS1161MTTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NIS1161MTTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NIS1161MTTAG reliable?
The price and inventory of NIS1161MTTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NIS1161MTTAG is usually 5 days.
3.What payment methods are accepted for NIS1161MTTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NIS1161MTTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NIS1161MTTAG?
NIS1161MTTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NIS1161MTTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NIS1161MTTAG?
For technical support, including NIS1161MTTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NIS1161MTTAG requirements.
6.How does Aetrix verify that NIS1161MTTAG is sourced from the original manufacturer or authorized distributors?
All NIS1161MTTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NIS1161MTTAG meets industry standards.
7.What is the process for return or replacement of NIS1161MTTAG?
All NIS1161MTTAG units undergo pre-shipment inspection (PSI). If there is an issue with NIS1161MTTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NIS1161MTTAG part is unused and in its original packaging.
Return procedure for NIS1161MTTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NIS1161MTTAG Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
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ESD5Z3.3T1G
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ESD5Z5.0T1G
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DESD5V0U1BB-7
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D12V0L1B2LP-7B
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PESD2V0Y1BSFYL
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