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onsemi NIS2161MTTAG
- Part No.:
- NIS2161MTTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 16-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
NIS2161MTTAG.pdf
- Description:
- LOW CAPACITANCE ESD PROTECTION F
- Quantity:
- Payment:
- Shipping:
Inventory:9,778
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Product details
Overview
NIS2161MTTAG from onsemi is an automotive-grade ESD protection IC with integrated short-to-battery and short-to-ground MOSFET protection for high-speed differential data lines. It features 0.40 pF typical I/O-to-GND capacitance, ±8 kV IEC 61000-4-2 contact ESD rating, 30 V drain-to-source voltage, 1.4 Ω typical RDS(on) at 4.5 V gate drive, and operates across −55 °C to +150 °C junction temperature. It is used in USB 2.0/3.0 and LVDS interfaces within automotive infotainment and ADAS systems.
For engineers reviewing the NIS2161MTTAG datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, WDFN10 package layout guidance, AEC-Q101 qualification status, clamping behavior under ISO 10605 transients, and real-world design implications for differential signal integrity preservation.
Technical Context
The NIS2161MTTAG integrates dual-channel bidirectional ESD diodes and two matched low-RDS(on) MOSFETs per channel - one for short-to-battery (STB) and one for short-to-ground (STG) protection. Its flow-through WDFN10 pinout enables matched trace lengths for differential pairs like D+ and D−, preserving impedance continuity up to 5 GHz bandwidth.
It operates in three defined modes: normal linear conduction (VGS > signal swing + VGS(TH)), active STB clamping (MOSFET saturation), and passive STG blocking (body diode + ESD diode coordination). Gate threshold voltage is specified at 0.1–1.5 V, enabling compatibility with 3.3 V and 5 V host logic levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | ±8 kV contact / ±15 kV air per IEC 61000-4-2 Level 4 - ensures robust handling during automotive assembly and service. |
| Junction Capacitance | 0.40 pF typical (I/O to GND) - minimizes signal attenuation on USB/LVDS lines operating up to 480 Mbps or 655 Mbps. |
| RDS(on) | 1.4 Ω typical at VGS = 4.5 V, ID = 125 mA - limits voltage drop and distortion on high-speed differential signals. |
| Clamping Voltage | 29 V at IPP = 1 A (8/20 µs); ≤66 V at ±16 A TLP - protects downstream transceivers from transient overvoltage without latch-up. |
| Breakdown Voltage | 16.5–23 V (VBR, I/O to GND) - withstands automotive battery shorts up to 16 V while remaining below USB/LVDS I/O absolute max ratings. |
| Operating Temperature | −55 °C to +150 °C (TJ) - qualified for engine bay, head unit, and camera module environments per AEC-Q101. |
| Package | WDFN10 (3.5 × 2.0 mm, 0.675 mm pitch) - surface-mount, exposed thermal pad, flow-through routing for D+/D− symmetry. |
Pinout & Package
Package: WDFN10 (Case 511CA), 3.5 mm × 2.0 mm body, 0.675 mm pitch, Pb-free, RoHS-compliant, with exposed thermal pad. Flow-through layout supports matched-length PCB routing for differential signaling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 & Pin 10 | Source 1 | Internally connected; provides low-impedance return path for Channel 1 (e.g., D− line). |
| Pin 5 & Pin 6 | Source 2 | Internally connected; provides low-impedance return path for Channel 2 (e.g., D+ line). |
| Pin 3 | VCC (5 V supply) | Gate bias input for both MOSFET channels; must be stable 4.5–5.5 V for full RDS(on) performance. |
| Pin 8 | GND | Power and signal reference; connects to exposed thermal pad for thermal and EMI control. |
| Pin 7 | D− (Data In/Out) | Protected differential signal terminal; connects to connector side of USB/LVDS pair. |
| Pin 9 | D+ | Protected differential signal terminal; symmetric counterpart to Pin 7 for impedance-matched routing. |
| Pin 2 | D+ Host | Host-side D+ connection; routed directly to transceiver with minimal stub length. |
| Pin 4 | D− Host | Host-side D− connection; maintains differential pair symmetry with Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.40 pF typical I/O-to-GND - preserves signal rise/fall times and eye diagram integrity on 480 Mbps USB 2.0 links. |
| Integrated STB/STG protection | Dual-MOSFET architecture actively clamps battery shorts up to 16 V and blocks ground faults without external components. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD stress - supports PPAP documentation for Tier 1 suppliers. |
| Flow-through WDFN10 layout | Pins arranged to enable straight-line PCB routing between connector and transceiver - eliminates skew-inducing bends in D+/D− traces. |
| Matched junction capacitance | ≤1.0% mismatch between D+ and D− paths - critical for common-mode rejection and jitter reduction in LVDS/APIX interfaces. |
Applications
| Automotive USB 2.0 Interface | LVDS Camera Link |
|---|---|
Use Scenario: Protecting rear-view or surround-view camera USB connections from ESD during service and from battery shorts during harness routing errors. IC Role / Device Role / Timing Role: Bidirectional ESD clamp and active short-circuit protector placed between USB micro-B connector and SoC USB PHY. Use Value: Prevents permanent damage to USB PHY ESD structures while maintaining <10 ps inter-pair skew via matched 0.40 pF capacitance. |
Use Scenario: Safeguarding high-speed serial video links from infotainment head unit to dashboard display in vehicles with 12 V battery systems. IC Role / Device Role / Timing Role: Signal-line protector with sub-1 Ω RDS(on) that avoids insertion loss degradation in 655 Mbps LVDS streams. Use Value: Enables reliable operation at −40 °C to +105 °C ambient with no signal integrity penalty due to flow-through pin mapping. |
| APIX 2/3 Automotive Video Bus | USB 3.0 High-Speed Data Port |
Use Scenario: Securing APIX 2/3 differential pairs against ESD events during factory testing and short-to-battery faults caused by adjacent wiring chafing. IC Role / Device Role / Timing Role: Dual-channel transient suppressor with integrated MOSFETs that respond within nanoseconds to fault conditions. Use Value: Maintains <0.5 dB insertion loss at 1.5 GHz and meets ISO 10605 pulse requirements without degrading bit error rate. |
Use Scenario: Adding robust front-end protection to USB 3.0 Type-A ports in vehicle docking stations exposed to frequent plugging/unplugging. IC Role / Device Role / Timing Role: Low-capacitance guard device placed before USB 3.0 SS RX/TX lanes to prevent ESD-induced PHY lockup. Use Value: Delivers 0.40 pF loading and 5 GHz bandwidth - compatible with SuperSpeed signaling without equalization overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD and short-circuit protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NUF2221MUTAG | Single-channel, 0.35 pF, no integrated STB/STG MOSFETs - relies on external TVS and discrete FETs. | Limited to ESD-only protection; unsuitable for automotive battery-short scenarios requiring active MOSFET response. | Select only if system-level short-circuit protection is handled elsewhere and ultra-low capacitance (<0.35 pF) is prioritized over integration. |
| TPD2EUSB30DRYR | 0.3 pF typical, ±12 kV ESD, no short-to-battery capability, supports USB 3.0 but lacks AEC-Q101 qualification. | Designed for consumer USB 3.0 ports; not validated for automotive temperature or reliability stress profiles. | Acceptable for non-automotive industrial USB 3.0 designs where AEC-Q101 is not required and STB protection is managed externally. |
Compared with NIS2161MTTAG, NUF2221MUTAG offers lower capacitance but requires external circuitry for short-circuit protection, while TPD2EUSB30DRYR supports higher ESD levels yet lacks automotive qualification and STB/STG functionality - making NIS2161MTTAG uniquely suited for integrated, AEC-Q101-compliant automotive data line protection.
Availability
NIS2161MTTAG is available at Aetrix Electronics and suitable for automotive infotainment, ADAS camera modules, and in-vehicle USB connectivity applications requiring stable component supply despite its discontinued status - inventory is secured through legacy procurement channels and lifecycle management support.
Supply support for NIS2161MTTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NIS2161MTTAG belongs to onsemi's automotive-qualified ESD protection product line, engineered specifically to address combined ESD, short-to-battery, and short-to-ground threats on high-speed differential buses in harsh vehicular environments.
FAQ
Is NIS2161MTTAG still in production?
No, NIS2161MTTAG is officially discontinued per onsemi's February 2026 datasheet revision. However, Aetrix Electronics maintains allocated legacy stock and supports design-in continuity through controlled distribution, obsolescence monitoring, and cross-reference guidance for functional alternatives.
What is the maximum data rate supported by NIS2161MTTAG?
NIS2161MTTAG supports up to 5 GHz bandwidth, enabling reliable operation with USB 2.0 (480 Mbps), USB 3.0 SuperSpeed (5 Gbps), LVDS (655 Mbps), and APIX 2/3 video links. Its 0.40 pF capacitance and flow-through WDFN10 layout preserve signal integrity without equalization.
Does NIS2161MTTAG require external bias components?
No, NIS2161MTTAG requires only a stable 5 V supply on Pin 3; no external pull-up resistors, gate drivers, or timing components are needed. An optional >15 kΩ resistor from Source to Gate may be added for gate discharge during link inactivity, but it is not mandatory for basic operation.
How does NIS2161MTTAG handle short-to-battery events?
During a short-to-battery event, NIS2161MTTAG uses its internal MOSFETs to enter saturation mode, clamping the D+/D− lines to approximately VGS − VGS(TH). This limits current into the transceiver while holding voltage below destructive thresholds - a behavior confirmed in the datasheet's Modes of Operation section.
Can NIS2161MTTAG be used in non-automotive applications?
Yes, NIS2161MTTAG can be deployed in industrial or medical high-speed interfaces where AEC-Q101 qualification is beneficial but not mandated. Its 0.40 pF capacitance, ±8 kV ESD rating, and 30 V VDSS make it suitable for any environment demanding robust differential line protection beyond standard IEC 61000-4-2 compliance.
NIS2161MTTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 16-TSSOP (0.173", 4.40mm Width)
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 2
- Voltage - Reverse Standoff (Typ):
- 16V (Max)
- Voltage - Breakdown (Min):
- 16.5V
- Voltage - Clamping (Max) @ Ipp:
- 29V
- Current - Peak Pulse (10/1000µs):
- 1A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- USB
- Capacitance @ Frequency:
- 0.4pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-TSSOP
NIS2161MTTAG FAQ
1.How can I place an order for NIS2161MTTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NIS2161MTTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NIS2161MTTAG reliable?
The price and inventory of NIS2161MTTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NIS2161MTTAG is usually 5 days.
3.What payment methods are accepted for NIS2161MTTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NIS2161MTTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NIS2161MTTAG?
NIS2161MTTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NIS2161MTTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NIS2161MTTAG?
For technical support, including NIS2161MTTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NIS2161MTTAG requirements.
6.How does Aetrix verify that NIS2161MTTAG is sourced from the original manufacturer or authorized distributors?
All NIS2161MTTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NIS2161MTTAG meets industry standards.
7.What is the process for return or replacement of NIS2161MTTAG?
All NIS2161MTTAG units undergo pre-shipment inspection (PSI). If there is an issue with NIS2161MTTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NIS2161MTTAG part is unused and in its original packaging.
Return procedure for NIS2161MTTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NIS2161MTTAG Tags
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