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Renesas NNCD10F(0)-T1B-A
- Part No.:
- NNCD10F(0)-T1B-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD10F(0)-T1B-A.pdf
- Description:
- NNCD10F - ZENER DIODES FOR SURGE
- Quantity:
- Payment:
- Shipping:
Inventory:18,000
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Product details
Overview
NNCD10F(0)-T1B-A from Renesas Electronics is a double-type electrostatic discharge (ESD) noise clipping diode with anode-common configuration in SC-59 (EIAJ) 3-pin mini mold package, rated for 200 mW total power dissipation, 30 kV IEC1000-4-2 ESD endurance, and 7.0 V typical dynamic impedance at 5 mA. It protects external interface circuits such as parallel printer ports and CD-ROM connectors against transient overvoltage events.
For engineers reviewing the NNCD10F(0)-T1B-A datasheet, NNCD10F(0)-T1B-A pinout, NNCD10F(0)-T1B-A application, or NNCD10F(0)-T1B-A equivalent, key selection criteria include breakdown voltage range (9.45–10.55 V), low clamping impedance (≤30 Ω), 80 pF capacitance at 1 MHz, and suitability for non-life-critical industrial and consumer interface protection where Standard-grade reliability suffices.
Technical Context
This device implements a dual-cathode, common-anode silicon diode structure optimized for fast transient response during ESD events per IEC1000-4-2 Level 4 (±30 kV contact discharge). Its clamping action begins near 9.45 V and stabilizes below 10.55 V under 5 mA test current, with dynamic impedance dropping to ≤30 Ω to limit voltage overshoot during surge conduction.
The SC-59 package enables surface-mount integration into compact external I/O paths, supporting bidirectional protection across two signal lines sharing one common return. Thermal performance is characterized up to 150 °C junction temperature, with derating beginning above 25 °C ambient per Fig. 1 in the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 9.45–10.55 V at 5 mA - defines minimum clamping threshold and ensures reliable turn-on before downstream IC damage. |
| Dynamic Impedance (Zz) | ≤30 Ω at 5 mA - determines voltage overshoot during ESD pulse; lower value improves clamping effectiveness. |
| Capacitance (Ct) | 80 pF at 1 MHz, 0 V - impacts high-speed signal integrity; suitable for parallel interfaces up to ~10 Mbps. |
| ESD Withstand | ≥30 kV per IEC1000-4-2 - qualifies for highest-level contact discharge immunity in consumer/industrial equipment. |
| Power Dissipation (P) | 200 mW total - sets continuous thermal limit; requires PCB copper area for heat spreading in sustained surge conditions. |
| Surge Reverse Power (PRSM) | 100 W at tT = 10 µs - supports single-pulse energy absorption without failure during transient events. |
Pinout & Package
Package: SC-59 (EIAJ), 3-pin mini mold, surface-mount, anode-common dual-diode configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. K1 | Cathode 1 | Connects to first protected signal line (e.g., DATA0); reverse-biased during normal operation, conducts during positive ESD transients on that line. |
| 2. K2 | Cathode 2 | Connects to second protected signal line (e.g., STROBE); independent clamping path sharing common anode. |
| 3. A | Anode (common) | Connected to system ground or low-impedance reference; serves as shared return for both cathodes during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel ESD protection | Single SC-59 package integrates two independent clamping diodes with shared anode-reduces board space vs. discrete solutions. |
| IEC1000-4-2 Level 4 compliance | Guaranteed ≥30 kV contact discharge endurance-meets stringent EMC requirements for external ports without additional circuitry. |
| Low dynamic impedance | ≤30 Ω at 5 mA ensures clamped voltage stays below 10.55 V + (5 mA × 30 Ω) ≈ 10.7 V during surge-protects 3.3 V/5 V logic inputs. |
| Controlled capacitance | 80 pF at 1 MHz minimizes signal distortion on parallel bus lines (e.g., Centronics-style printer interfaces) while maintaining ESD robustness. |
Applications
| Parallel Printer Interface Protection | CD-ROM Drive External Connector |
|---|---|
|
Use Scenario: Protecting unshielded parallel cables between PC and peripheral devices from human-body-model ESD events during hot-plug connection. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed between each data line and chassis ground, limiting transient voltage to <11 V during ±30 kV contact discharge. Use Value: Prevents latch-up or gate oxide damage in host controller and peripheral ASICs without adding series resistance or degrading 1–2 Mbps data timing margins. |
Use Scenario: Shielding CD-ROM drive front-panel connectors (audio out, headphone jack, eject button) from ESD induced by user handling. IC Role / Device Role / Timing Role: Anode-grounded dual-diode shunt protecting two low-frequency analog/digital signals simultaneously using shared ground return. Use Value: Eliminates need for separate TVS diodes per line, reducing BOM count and PCB footprint while maintaining <100 ns response time. |
| Industrial Control Panel Keypad | Legacy Game Console Peripheral Port |
|
Use Scenario: Guarding membrane keypad matrix lines connected to microcontroller GPIOs in factory-floor HMI panels exposed to dry-environment static. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp on row/column scan lines, activated only during >9.45 V transients, otherwise presenting <1 µA leakage. Use Value: Preserves keypad scan accuracy and debounce timing while surviving repeated 30 kV discharges-validated per IEC1000-4-2 test protocol. |
Use Scenario: Securing cartridge slot or controller port pins in retro-style gaming hardware subject to frequent insertion/removal and user-handling ESD. IC Role / Device Role / Timing Role: Dual-path transient suppressor on bidirectional data/control lines (e.g., NES-style 74HC245 bus), referenced to system ground. Use Value: Enables long-term field reliability without firmware-level ESD mitigation, meeting consumer electronics durability expectations for legacy-compatible designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4105MR6T1G | Quad-channel, 5.5 V breakdown, 30 pF @ 1 MHz, SOT-23-6 package | Higher channel count but lower voltage rating-suited for 3.3 V logic, not 10 V clamping needs | Select when protecting four 3.3 V lines with tighter capacitance budget; not drop-in for NNCD10F(0)-T1B-A's 10 V range. |
| Vishay SMAJ10A | Single-channel, 10 V standoff, 100 W peak power, DO-214AC package | Larger footprint, higher capacitance (~150 pF), no dual-cathode convenience | Choose for higher-energy surge handling where board space allows and dual-line integration is unnecessary. |
Compared with NUP4105MR6T1G and SMAJ10A, NNCD10F(0)-T1B-A uniquely delivers dual-line 10 V clamping in a compact SC-59 package with 80 pF capacitance-ideal for space-constrained parallel interfaces requiring precise voltage thresholding and IEC1000-4-2 Level 4 compliance.
Availability
NNCD10F(0)-T1B-A is available at Aetrix Electronics and suitable for parallel printer interfaces, CD-ROM external connectors, industrial keypad panels, and legacy game console peripheral ports requiring stable component supply and Standard-grade reliability.
Supply support for NNCD10F(0)-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer systems.
NNCD10F(0)-T1B-A belongs to Renesas' ESD noise clipping diode family designed specifically for cost-effective, high-reliability transient suppression in Standard-grade external interface circuits-not intended for safety-critical or life-support applications.
FAQ
What is the exact breakdown voltage range specified for NNCD10F(0)-T1B-A?
The NNCD10F(0)-T1B-A has a guaranteed breakdown voltage range of 9.45 V to 10.55 V at 5 mA test current, as confirmed in the "Electrical Characteristics" table of the D11774EJ2V0DS00 datasheet. This range ensures consistent clamping behavior across production lots and defines the minimum voltage at which the diode enters avalanche conduction during ESD events.
Is NNCD10F(0)-T1B-A compliant with IEC1000-4-2 ESD immunity testing?
Yes, NNCD10F(0)-T1B-A is explicitly rated for ≥30 kV contact discharge per IEC1000-4-2, as stated in the "Features" and "Electrical Characteristics" sections of its datasheet. This qualification applies to both cathode terminals referenced to the common anode and validates its use in end-equipment seeking Level 4 ESD certification.
What package type and pin configuration does NNCD10F(0)-T1B-A use?
NNCD10F(0)-T1B-A uses the SC-59 (EIAJ) 3-pin mini mold package with pin 1 = K1 (cathode 1), pin 2 = K2 (cathode 2), and pin 3 = A (anode common). This anode-common dual-diode layout enables compact bidirectional protection of two signal lines sharing one ground reference point.
Can NNCD10F(0)-T1B-A be used in automotive applications?
No-NNCD10F(0)-T1B-A is designated as a Standard-grade Renesas product, qualified for computers, office equipment, and consumer electronics per quality grade definitions in the datasheet. It is not approved for automotive use, which requires High Quality-grade components with extended temperature range and AEC-Q200 qualification.
What is the maximum allowable power dissipation for NNCD10F(0)-T1B-A?
NNCD10F(0)-T1B-A has a maximum total power dissipation of 200 mW at TA = 25 °C, with linear derating above that ambient temperature as shown in Fig. 1 of the datasheet. This rating governs continuous DC power handling and must be considered alongside transient surge limits (e.g., 100 W for 10 µs pulses) for full thermal design.
NNCD10F(0)-T1B-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7V (Max)
- Voltage - Breakdown (Min):
- 9.45V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 80pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD10F(0)-T1B-A FAQ
1.How can I place an order for NNCD10F(0)-T1B-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD10F(0)-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD10F(0)-T1B-A reliable?
The price and inventory of NNCD10F(0)-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD10F(0)-T1B-A is usually 5 days.
3.What payment methods are accepted for NNCD10F(0)-T1B-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD10F(0)-T1B-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD10F(0)-T1B-A?
NNCD10F(0)-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD10F(0)-T1B-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD10F(0)-T1B-A?
For technical support, including NNCD10F(0)-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD10F(0)-T1B-A requirements.
6.How does Aetrix verify that NNCD10F(0)-T1B-A is sourced from the original manufacturer or authorized distributors?
All NNCD10F(0)-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD10F(0)-T1B-A meets industry standards.
7.What is the process for return or replacement of NNCD10F(0)-T1B-A?
All NNCD10F(0)-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD10F(0)-T1B-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD10F(0)-T1B-A part is unused and in its original packaging.
Return procedure for NNCD10F(0)-T1B-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD10F(0)-T1B-A Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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