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Renesas NNCD10F-T1B-A
- Part No.:
- NNCD10F-T1B-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD10F-T1B-A.pdf
- Description:
- NNCD10F-T1B-A - ELECTROSTATIC DI
- Quantity:
- Payment:
- Shipping:
Inventory:21,000
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Product details
Overview
NNCD10F-T1B-A from Renesas Electronics is a dual-channel ESD noise clipping diode in SC-59 (EIAJ) 3-pin mini mold package, with 9.45–10.55 V breakdown voltage, ≤30 Ω dynamic impedance at 5 mA, 7.0 pF capacitance at 0 V, and 30 kV IEC 1000-4-2 ESD endurance-designed for protecting USB, audio, and parallel interface lines against electrostatic discharge.
For engineers reviewing the NNCD10F-T1B-A datasheet, NNCD10F-T1B-A pinout, NNCD10F-T1B-A application, or NNCD10F-T1B-A equivalent, key selection criteria include common-anode dual-cathode topology, 200 mW total power dissipation, 100 W surge reverse power rating (10 µs pulse), junction temperature limit of 150 °C, and compatibility with low-capacitance signal-line protection in consumer electronics interfaces.
Technical Context
This device implements an anode-common dual-diode structure optimized for bidirectional transient voltage suppression on differential or independent signal lines. Its low 7.0 pF capacitance and sub-30 Ω dynamic impedance ensure minimal signal distortion in high-speed digital interfaces up to ~100 MHz.
Designed per IEC 1000-4-2 Level 4 (±30 kV contact discharge), it clamps transients by avalanche conduction between anode and either cathode, with thermal design governed by transient thermal impedance of 625 °C/W and derated power dissipation above 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 9.45–10.55 V - defines minimum clamping threshold before avalanche conduction begins on each A–K path |
| Dynamic Impedance | ≤30 Ω at 5 mA - determines voltage overshoot during fast ESD events; lower value improves clamping precision |
| Capacitance | 7.0 pF at 0 V - enables use on signal lines up to ~100 MHz without significant attenuation or timing skew |
| ESD Withstand | ≥30 kV per IEC 1000-4-2 - validated for industrial-grade contact discharge immunity in end-equipment certification |
| Power Dissipation | 200 mW total - sets maximum continuous DC/low-frequency power handling across both diodes |
| Surge Power | 100 W (10 µs pulse) - supports single-event transient energy absorption without thermal runaway |
| Junction Temp | 150 °C max - constrains PCB layout and airflow requirements for sustained operation near thermal limits |
Pinout & Package
Package: SC-59 (EIAJ) 3-pin mini mold, surface-mount, anode-common dual-diode configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | First protected signal line terminal; connects to input trace requiring bidirectional ESD clamping to common anode |
| 2 | Cathode 2 (K2) | Second protected signal line terminal; electrically isolated from K1 but shares anode node for compact dual-line protection |
| 3 | Anode (A) | Common reference node; typically tied to ground or low-impedance return plane to complete clamping path for both channels |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel common-anode topology | Enables simultaneous protection of two independent signal lines with shared ground reference and single-package footprint |
| IEC 1000-4-2 Level 4 compliance | Guarantees ≥30 kV contact discharge robustness-meets industrial and commercial EMI immunity standards |
| Low 7.0 pF junction capacitance | Preserves signal integrity on high-speed interfaces such as USB 1.1, audio DAC outputs, and parallel printer ports |
| 200 mW total power rating | Supports continuous operation under moderate leakage or repetitive low-energy transients without thermal shutdown |
| SC-59 package compatibility | Ensures drop-in replacement capability with standard SMT pick-and-place equipment and reflow profiles |
Applications
| USB 1.1 Data Lines | Audio Line Outputs |
|---|---|
Use Scenario: Protecting D+ and D− pins of legacy USB peripherals against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector, clamping surges before they reach USB transceiver IC. Use Value: Prevents latch-up or permanent damage to USB PHY while maintaining <1% signal rise-time degradation due to 7.0 pF capacitance. | Use Scenario: Shielding line-level analog audio outputs (e.g., headphone jack, DAC output) from user-hand ESD during cable connection. IC Role / Device Role / Timing Role: Low-capacitance clipping diode shunting transients to ground, preserving audio bandwidth and minimizing pop/click artifacts. Use Value: Enables direct integration into audio subsystems without RC filtering or bandwidth-limiting compensation networks. |
| Parallel Printer Interface | Industrial Sensor Signal Lines |
Use Scenario: Safeguarding 8-bit data bus and control lines (STROBE, ACK, BUSY) of Centronics-style printer ports. IC Role / Device Role / Timing Role: Dual-diode array providing per-line clamping referenced to common chassis ground, minimizing crosstalk during multi-line surges. Use Value: Eliminates need for discrete diodes per line-reduces BOM count by 50% and PCB area by >40% versus single-diode solutions. | Use Scenario: Protecting analog voltage outputs (0–5 V, 0–10 V) from field-induced ESD in factory-floor sensor modules. IC Role / Device Role / Timing Role: Low-leakage (<2 µA) clamping element placed at sensor module edge connector to prevent op-amp input saturation or ADC overrange. Use Value: Maintains measurement accuracy under ESD stress with no offset drift or gain error induced by leakage current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Single-channel, 0.5 pF typical capacitance, 12 V breakdown, 15 kV IEC 61000-4-2 rated | Optimized for ultra-high-speed interfaces (USB 2.0+, HDMI); lower capacitance but reduced ESD margin | Select when signal bandwidth exceeds 200 MHz and ESD requirement is ≤15 kV |
| ESD9X5.0ST5G | Dual-channel, 5.0 V breakdown, 12 pF capacitance, 30 kV IEC 61000-4-2 rated, SOT-553 package | Higher capacitance limits use to sub-50 MHz signals; smaller footprint but lower power rating (150 mW) | Select when board space is constrained and 5 V logic-level clamping is required |
Compared with NNCD10F-T1B-A, TPD2E001DRYR offers superior high-frequency performance but sacrifices ESD robustness and dual-line integration, while ESD9X5.0ST5G provides identical ESD rating in a smaller package but at higher capacitance and lower power handling-making NNCD10F-T1B-A optimal for balanced 30 kV/7 pF/200 mW protection in mid-speed interfaces.
Availability
NNCD10F-T1B-A is available at Aetrix Electronics and suitable for USB peripheral design, audio interface protection, and parallel port ESD hardening requiring stable component supply and long-term production continuity.
Supply support for NNCD10F-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for automotive, industrial, and consumer markets.
NNCD10F-T1B-A belongs to Renesas' legacy ESD noise clipping diode family developed for cost-sensitive, high-volume interface protection-targeting consumer electronics, office peripherals, and industrial I/O modules where reliability and standardized test compliance are critical.
FAQ
What is the exact breakdown voltage range specified for NNCD10F-T1B-A?
The NNCD10F-T1B-A has a guaranteed breakdown voltage range of 9.45 V to 10.55 V at 5 mA test current, measured per JEDEC JESD22-A114 test conditions. This range ensures consistent clamping behavior across production lots and defines the minimum voltage at which each A–K path enters avalanche conduction during ESD events. The specification is verified during final test and applies to both diode elements within the same unit.
Does NNCD10F-T1B-A support bidirectional ESD protection on both signal lines simultaneously?
Yes, NNCD10F-T1B-A supports true bidirectional protection on both K1 and K2 terminals relative to the common anode (pin 3). Each cathode–anode junction operates independently, enabling simultaneous clamping of positive and negative transients on separate signal paths-such as D+ and D− in USB 1.1-without interaction or cross-conduction, as confirmed by its dual-element SC-59 construction and IEC 1000-4-2 test validation.
What is the maximum allowable junction temperature for NNCD10F-T1B-A during operation?
The maximum junction temperature for NNCD10F-T1B-A is 150 °C, as defined in the Absolute Maximum Ratings table. This limit governs thermal design margins: at 25 °C ambient, full 200 mW power dissipation is allowed, but derating is required above that temperature per the "Power Dissipation vs. Ambient Temperature" curve (Fig. 1), reaching zero dissipation at 150 °C ambient. Exceeding 150 °C risks irreversible parametric shift or bond-wire failure.
Can NNCD10F-T1B-A be used in automotive applications?
NNCD10F-T1B-A is classified as a Standard quality grade device per Renesas documentation and is intended for computers, office equipment, and consumer electronics-not automotive systems. It lacks AEC-Q200 qualification, extended temperature range (-40 to +125 °C), or PPAP documentation. For automotive ESD protection, Renesas recommends qualified alternatives such as the RCLAMP series, which undergo rigorous stress testing and meet ISO 10605 requirements.
How does the 7.0 pF capacitance of NNCD10F-T1B-A impact signal integrity in high-speed interfaces?
The 7.0 pF capacitance of NNCD10F-T1B-A-measured at 0 V bias-introduces negligible loading on interfaces operating below ~100 MHz, such as USB 1.1 (12 Mbps), parallel printer buses, and analog audio lines. At 10 MHz, capacitive reactance is ~2.3 kΩ, ensuring minimal signal attenuation; at 100 MHz, it drops to ~230 Ω, still compatible with 50–100 Ω transmission lines. This value was selected to balance ESD robustness and bandwidth preservation in mid-speed applications.
NNCD10F-T1B-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7V (Max)
- Voltage - Breakdown (Min):
- 9.45V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 80pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD10F-T1B-A FAQ
1.How can I place an order for NNCD10F-T1B-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD10F-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD10F-T1B-A reliable?
The price and inventory of NNCD10F-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD10F-T1B-A is usually 5 days.
3.What payment methods are accepted for NNCD10F-T1B-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD10F-T1B-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD10F-T1B-A?
NNCD10F-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD10F-T1B-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD10F-T1B-A?
For technical support, including NNCD10F-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD10F-T1B-A requirements.
6.How does Aetrix verify that NNCD10F-T1B-A is sourced from the original manufacturer or authorized distributors?
All NNCD10F-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD10F-T1B-A meets industry standards.
7.What is the process for return or replacement of NNCD10F-T1B-A?
All NNCD10F-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD10F-T1B-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD10F-T1B-A part is unused and in its original packaging.
Return procedure for NNCD10F-T1B-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD10F-T1B-A Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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