My Inquiry
My Account
Renesas NNCD10F-T1B-AT
- Part No.:
- NNCD10F-T1B-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD10F-T1B-AT.pdf
- Description:
- NNCD10F-T1B-AT - ELECTROSTATIC D
- Quantity:
- Payment:
- Shipping:
Inventory:30,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NNCD10F-T1B-AT from Renesas Electronics is a dual-channel ESD protection diode in SC-59 (EIAJ) 3-pin mini mold package, with anode-common configuration, 9.45–10.55 V breakdown voltage, ≤30 Ω dynamic impedance at 5 mA, and 30 kV IEC 1000-4-2 ESD endurance-designed for USB, HDMI, and parallel interface port protection in consumer electronics.
For engineers reviewing the NNCD10F-T1B-AT datasheet, NNCD10F-T1B-AT pinout, NNCD10F-T1B-AT application, or NNCD10F-T1B-AT equivalent, key selection criteria include common-anode dual-cathode topology, 7.0 pF typical capacitance at 1 MHz, 200 mW total power dissipation, and compatibility with high-speed signal lines requiring low-clamping-voltage transient suppression.
Technical Context
This device implements a double-type, anode-common ESD clipping diode structure optimized for bidirectional transient voltage suppression on differential or independent signal lines. Each cathode–anode path provides symmetric clamping with guaranteed 30 kV IEC 1000-4-2 contact discharge immunity and ≤30 Ω dynamic impedance at rated test current.
It operates within –55 °C to +150 °C storage range and supports junction temperatures up to 150 °C. The 3-pin SC-59 package enables compact PCB layout for external interface protection without requiring series impedance matching or additional biasing circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 9.45–10.55 V (ensures reliable clamping before damage to downstream 3.3 V/5 V logic) |
| Dynamic Impedance | ≤30 Ω at 5 mA (minimizes voltage overshoot during fast ESD transients) |
| Capacitance | 7.0 pF at 1 MHz (low enough for USB 2.0 and HDMI 1.4 signal integrity) |
| ESD Withstand | ≥30 kV per IEC 1000-4-2 (meets industrial-grade interface immunity requirements) |
| Power Dissipation | 200 mW total (supports continuous operation in ambient up to 75 °C) |
| Surge Power | 100 W (10 µs pulse, non-repetitive; handles single-event cable discharge events) |
| Junction Temp | 150 °C max (enables use in thermally constrained enclosures) |
Pinout & Package
Package: SC-59 (EIAJ), 3-pin mini mold, surface-mount, anode-common dual-diode configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | First protected signal line input; clamps to common anode during positive transients |
| 2 | Cathode 2 (K2) | Second protected signal line input; enables dual-line protection in single footprint |
| 3 | Anode (A) | Common return node; connects to system ground or reference plane for bidirectional clamping |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel anode-common topology | Reduces component count for differential or paired signal protection (e.g., D+ and D− in USB) |
| 30 kV IEC 1000-4-2 contact discharge rating | Exceeds Level 4 immunity requirement for industrial and commercial end equipment |
| 7.0 pF capacitance at 1 MHz | Preserves signal rise/fall times in <480 Mbps data links without measurable jitter impact |
| 200 mW total power dissipation | Supports sustained operation under repeated low-energy ESD events without thermal derating |
| SC-59 package footprint | Enables automated SMT assembly and matches industry-standard 3-pin ESD diode land patterns |
Applications
| USB 2.0 Port Protection | HDMI Interface Clamping |
|---|---|
Use Scenario: Protecting upstream/downstream USB 2.0 ports against electrostatic discharge from hot-plug cables and user handling. IC Role / Device Role / Timing Role: ESD clipping diode placed directly at connector, shunting transients to ground before reaching USB transceiver IC. Use Value: Prevents latch-up or permanent damage to USB PHY while maintaining <1 ns response time and minimal signal distortion. | Use Scenario: Safeguarding HDMI source/sink connectors against ESD events during cable insertion or field operation. IC Role / Device Role / Timing Role: Bidirectional transient suppressor on TMDS clock and data pairs, referenced to common ground plane. Use Value: Maintains 75 Ω impedance continuity and avoids pixel dropouts or audio sync loss due to clamping-induced reflections. |
| Parallel Printer Interface | Industrial Control I/O Port |
Use Scenario: Shielding legacy Centronics-style parallel printer ports from ESD during cable mating and peripheral swapping. IC Role / Device Role / Timing Role: Dual-cathode clamp protecting multiple data lines (D0–D7) and control signals (STROBE, ACK) simultaneously. Use Value: Eliminates spurious printer timeouts and data corruption caused by transient-induced logic glitches. | Use Scenario: Hardening digital I/O headers on PLC modules and HMI panels exposed to factory-floor ESD sources. IC Role / Device Role / Timing Role: Front-end protection element on isolated or non-isolated GPIO lines interfacing with sensors or actuators. Use Value: Extends field reliability of control systems by preventing microcontroller reset or register corruption during maintenance operations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Single-channel, 5.5 V breakdown, 12 pF capacitance, 30 kV ESD rating | Requires two devices for dual-line protection; higher capacitance limits use in >100 Mbps links | Preferred when lower clamping voltage is prioritized over channel density |
| ESD9X5.0ST5G | Dual-channel, 5.0 V breakdown, 35 pF capacitance, 30 kV ESD rating | Higher capacitance restricts use to low-speed interfaces (<10 Mbps); lower breakdown suits 3.3 V logic only | Appropriate for cost-sensitive 3.3 V microcontroller I/O protection where speed is not critical |
Compared with TPD2E001DRYR and ESD9X5.0ST5G, the NNCD10F-T1B-AT offers higher breakdown voltage (9.45–10.55 V) suitable for 5 V tolerant interfaces, lower 7.0 pF capacitance enabling USB 2.0 compliance, and integrated dual-cathode/anode-common topology that reduces board space and BOM count.
Availability
NNCD10F-T1B-AT is available at Aetrix Electronics and suitable for USB 2.0 port protection, HDMI interface clamping, and industrial control I/O port hardening requiring stable component supply and long-term production support.
Supply support for NNCD10F-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, infrastructure, and IoT applications.
The NNCD10F-T1B-AT belongs to Renesas' ESD noise clipping diode product line, engineered specifically for high-immunity, low-capacitance transient suppression in consumer and industrial external interface circuits.
FAQ
What is the maximum operating temperature for the NNCD10F-T1B-AT?
The NNCD10F-T1B-AT has a maximum junction temperature of 150 °C and a storage temperature range of –55 °C to +150 °C. Its thermal performance allows continuous operation in ambient temperatures up to 75 °C at full 200 mW power dissipation, making it suitable for enclosed consumer electronics and industrial control enclosures where airflow is limited. Derating is required above this ambient threshold per Figure 1 in the datasheet.
Does the NNCD10F-T1B-AT support bidirectional ESD protection?
Yes, the NNCD10F-T1B-AT supports bidirectional ESD protection via its anode-common dual-cathode configuration: each cathode–anode path conducts during positive transients on its respective line, while reverse-biased conduction during negative transients is enabled through the common anode connection to ground. This architecture ensures symmetrical clamping behavior on both signal polarities without external bias components.
Can the NNCD10F-T1B-AT be used for HDMI 1.4 signal lines?
Yes, the NNCD10F-T1B-AT is suitable for HDMI 1.4 TMDS data and clock lines due to its 7.0 pF typical capacitance at 1 MHz and ≤30 Ω dynamic impedance, which preserve signal integrity below 3.4 Gbps. Its low capacitance minimizes insertion loss and maintains eye diagram margins, and its 30 kV IEC 1000-4-2 rating meets HDMI compliance requirements for connector-level ESD robustness.
What is the surge power rating of the NNCD10F-T1B-AT?
The NNCD10F-T1B-AT has a non-repetitive surge reverse power rating of 100 W at tT = 10 µs, as specified in Figure 6 of the datasheet. This rating reflects its ability to absorb single-event cable discharge energy without failure. It is not intended for repetitive surge conditions; for such cases, additional circuit-level design review-including duty cycle and thermal management-is required.
Is the NNCD10F-T1B-AT RoHS compliant?
Yes, the NNCD10F-T1B-AT complies with the EU RoHS Directive and contains no restricted substances above allowable thresholds. Renesas Electronics confirms environmental compliance for this part in accordance with applicable legislation, including lead-free termination and halogen-free molding compound. Full material declarations and test reports are available upon request from Renesas or authorized distributors.
NNCD10F-T1B-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7V (Max)
- Voltage - Breakdown (Min):
- 9.45V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 80pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD10F-T1B-AT FAQ
1.How can I place an order for NNCD10F-T1B-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD10F-T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD10F-T1B-AT reliable?
The price and inventory of NNCD10F-T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD10F-T1B-AT is usually 5 days.
3.What payment methods are accepted for NNCD10F-T1B-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD10F-T1B-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD10F-T1B-AT?
NNCD10F-T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD10F-T1B-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD10F-T1B-AT?
For technical support, including NNCD10F-T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD10F-T1B-AT requirements.
6.How does Aetrix verify that NNCD10F-T1B-AT is sourced from the original manufacturer or authorized distributors?
All NNCD10F-T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD10F-T1B-AT meets industry standards.
7.What is the process for return or replacement of NNCD10F-T1B-AT?
All NNCD10F-T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD10F-T1B-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD10F-T1B-AT part is unused and in its original packaging.
Return procedure for NNCD10F-T1B-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD10F-T1B-AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
