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Renesas NNCD11F-T1B-AT
- Part No.:
- NNCD11F-T1B-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD11F-T1B-AT.pdf
- Description:
- NNCD11F-T1B-AT - ELECTROSTATIC D
- Quantity:
- Payment:
- Shipping:
Inventory:12,000
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Product details
Overview
NNCD11F-T1B-AT from Renesas Electronics is a dual-channel ESD noise clipping diode in SC-59 (EIAJ) 3-pin mini mold package, with breakdown voltage 10.44–11.56 V, dynamic impedance ≤30 Ω at 5 mA, reverse leakage ≤2 µA at 8.0 V, capacitance 70 pF at 0 V, and IEC 1000-4-2 ESD endurance ≥30 kV. It serves as bidirectional transient voltage suppressor for USB, HDMI, and parallel interface data lines.
For engineers reviewing the NNCD11F-T1B-AT datasheet, NNCD11F-T1B-AT pinout, NNCD11F-T1B-AT application, or NNCD11F-T1B-AT equivalent, key selection criteria include common-anode dual-cathode topology, 200 mW total power dissipation, 100 W surge rating (10 µs), junction temperature limit of 150 °C, and RoHS-compliant packaging for consumer-grade external interface protection.
Technical Context
This device implements a double-type, anode-common ESD protection structure optimized for fast clamping of electrostatic discharge transients on signal lines. Its dual-cathode configuration enables independent protection of two signal paths sharing one common return, reducing board space versus discrete single-diode solutions.
Designed to meet IEC 1000-4-2 Level 4 (±30 kV contact discharge), it delivers low dynamic impedance (≤30 Ω) and low capacitance (70 pF) to minimize signal distortion on high-speed digital interfaces while maintaining robust surge handling up to 100 W for 10 µs pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 10.44–11.56 V - defines clamping threshold for bidirectional ESD events on both cathodes relative to common anode |
| Dynamic Impedance | ≤30 Ω at 5 mA - ensures low-voltage clamping during fast ESD pulses, limiting peak stress on downstream ICs |
| Reverse Leakage | ≤2 µA at 8.0 V - guarantees minimal DC loading on protected signal lines during normal operation |
| Capacitance | 70 pF at 0 V - supports signal integrity on interfaces up to ~100 MHz without excessive attenuation or timing skew |
| ESD Withstand | ≥30 kV per IEC 1000-4-2 - validated for industrial and consumer equipment requiring Level 4 contact discharge immunity |
| Power Dissipation | 200 mW total - sets thermal derating limit for continuous operation; requires PCB copper area for heat spreading |
| Surge Rating | 100 W (10 µs pulse) - handles single-event transient energy without parametric shift or failure |
Pinout & Package
Package: SC-59 (EIAJ) 3-pin mini mold, surface-mount, dimensions 2.9 × 1.5 × 1.1 mm (L × W × H), anode-common dual-cathode configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | First protected signal line; clamps positive transients to anode and negative transients to ground via internal path |
| 2 | Cathode 2 (K2) | Second protected signal line; operates independently but shares common anode reference and thermal mass |
| 3 | Anode (A) | Common reference node; typically connected to system ground or low-impedance return plane for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| Dual-cathode, anode-common topology | Enables compact protection of two signal lines with shared ground reference and reduced PCB footprint vs. discrete diodes |
| IEC 1000-4-2 Level 4 compliance | Validated ≥30 kV contact discharge performance eliminates need for additional external ESD staging in standard consumer designs |
| Low 70 pF capacitance | Preserves signal rise/fall times on interfaces such as parallel printer ports, legacy audio/data buses, and low-speed USB |
| 200 mW total power rating | Supports sustained clamping under repeated low-energy transients without thermal runaway when mounted on ≥10 mm² copper |
| SC-59 package compatibility | Matches standard pick-and-place tooling and reflow profiles used for small-signal SMT diodes across contract manufacturing lines |
Applications
| USB 2.0 Peripheral Port Protection | Parallel Printer Interface Clamping |
|---|---|
|
Use Scenario: Protecting D+ and D− lines of a USB 2.0 peripheral (e.g., keyboard, mouse) against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed between connector pins and USB transceiver IC inputs. Use Value: Prevents latch-up or gate oxide damage in the USB PHY by limiting transient voltage to ≤12 V while adding only 70 pF loading per line. |
Use Scenario: Shielding 8-bit parallel data bus (DATA0–DATA7) and control lines (STROBE, ACK) of a legacy printer interface from handling-induced ESD. IC Role / Device Role / Timing Role: Dual-channel transient suppressor assigned to paired signals (e.g., DATA0/DATA1) sharing common ground return. Use Value: Maintains signal fidelity at 1–2 MHz data rates with <1 ns response time and avoids false triggering due to ≤2 µA leakage. |
| HDMI Sink Device Hot-Plug Detection Line | Industrial Control Panel Keypad Lines |
|
Use Scenario: Guarding the HPD (Hot-Plug Detect) line of an HDMI sink (e.g., monitor) against user-touch ESD before cable connection is established. IC Role / Device Role / Timing Role: Single-line ESD clamp referenced to system ground, leveraging one cathode channel of NNCD11F-T1B-AT. Use Value: Ensures reliable HPD logic-level detection (0/5 V) by clamping transients to <12 V without distorting the 5 V DC bias or adding measurable RC delay. |
Use Scenario: Protecting momentary tactile switch matrix rows/columns in an industrial HMI panel exposed to operator finger discharge. IC Role / Device Role / Timing Role: Common-anode dual-diode protecting two adjacent keypad scan lines routed over long flex cables. Use Value: Eliminates microcontroller input resets or phantom keypresses caused by ±8 kV air discharge, verified per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0530HT1G | Single-channel Schottky diode, 30 V reverse voltage, 0.5 A forward current, 120 pF capacitance, no IEC 1000-4-2 validation stated | Requires two devices + external series resistor for dual-line protection; higher capacitance limits use to ≤30 MHz signals | Preferred where ultra-low forward voltage (<0.35 V) is critical for low-voltage logic rail clamping |
| Vishay ESDD3V3S-2/TR | Dual-channel TVS with 3.3 V standoff, 12 V clamping, 150 pF, 30 kV IEC 1000-4-2 rated, SOT-23 package | Lower voltage rating suits 3.3 V systems; larger capacitance restricts use to sub-50 MHz interfaces | Recommended for modern 3.3 V microcontroller I/O protection where tighter voltage margin is required |
Compared with NNCD11F-T1B-AT, NSR0530HT1G offers lower forward drop but lacks integrated dual-cathode layout and certified ESD rating, while ESDD3V3S-2/TR provides guaranteed 3.3 V system compatibility but doubles capacitance-making NNCD11F-T1B-AT optimal for 5 V parallel interfaces needing balanced speed, robustness, and layout efficiency.
Availability
NNCD11F-T1B-AT is available at Aetrix Electronics and suitable for USB peripheral design, parallel interface protection, HDMI HPD line safeguarding, and industrial keypad ESD hardening requiring stable component supply across production lifecycles.
Supply support for NNCD11F-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and consumer applications.
NNCD11F-T1B-AT belongs to Renesas' ESD noise clipping diode family designed specifically for cost-effective, high-reliability electromagnetic interference suppression in external interface circuits of standard-grade electronic equipment.
FAQ
What is the maximum operating temperature for NNCD11F-T1B-AT?
The NNCD11F-T1B-AT has a maximum junction temperature of 150 °C and a storage temperature range of –55 °C to +150 °C. For continuous operation at ambient temperatures above 75 °C, derating per Figure 1 in the datasheet applies-power dissipation must be reduced linearly to 0 mW at 150 °C ambient. The NNCD11F-T1B-AT must be mounted on adequate copper area to maintain thermal resistance below 625 °C/W.
Does NNCD11F-T1B-AT support bidirectional ESD protection?
Yes, the NNCD11F-T1B-AT provides true bidirectional clamping: each cathode-to-anode path conducts during positive transients, while the inherent PN junction structure allows reverse conduction during negative transients relative to the common anode. This enables full IEC 1000-4-2 ±30 kV protection on both K1 and K2 lines without external polarity components. The NNCD11F-T1B-AT achieves this using its anode-common dual-diode architecture.
Can NNCD11F-T1B-AT be used in automotive applications?
No-the NNCD11F-T1B-AT is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics-not transportation systems. It lacks AEC-Q200 qualification, extended temperature validation, or automotive-specific reliability testing. For automotive infotainment or body control modules, Renesas recommends qualified alternatives like the RCLAMP0524P.TCT series instead of NNCD11F-T1B-AT.
What is the typical capacitance of NNCD11F-T1B-AT and how does it affect signal integrity?
The NNCD11F-T1B-AT exhibits 70 pF capacitance at 0 V bias, measured at 1 MHz. This value introduces negligible loading on low-speed digital signals (e.g., parallel printer buses ≤2 MHz) but may attenuate edges or cause timing skew on signals above ~50 MHz. For USB 2.0 (480 Mbps), the NNCD11F-T1B-AT remains viable on D+/D− only if trace lengths are short and termination is preserved; the NNCD11F-T1B-AT is not recommended for USB 3.0 or HDMI TMDS lines.
How is the surge power rating of NNCD11F-T1B-AT defined and tested?
The NNCD11F-T1B-AT is rated for 100 W non-repetitive surge reverse power (PRSM) at tT = 10 µs, per Figure 6 in the datasheet. This reflects a single rectangular pulse applied across the cathode-anode junction under controlled lab conditions. The rating assumes no repetition-repeated surges require thermal recovery time, and cumulative energy must stay below the 200 mW steady-state limit. The NNCD11F-T1B-AT's transient thermal impedance curve (Figure 5) confirms safe operation within this boundary.
NNCD11F-T1B-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V (Max)
- Voltage - Breakdown (Min):
- 10.44V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 70pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD11F-T1B-AT FAQ
1.How can I place an order for NNCD11F-T1B-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD11F-T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD11F-T1B-AT reliable?
The price and inventory of NNCD11F-T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD11F-T1B-AT is usually 5 days.
3.What payment methods are accepted for NNCD11F-T1B-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD11F-T1B-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD11F-T1B-AT?
NNCD11F-T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD11F-T1B-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD11F-T1B-AT?
For technical support, including NNCD11F-T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD11F-T1B-AT requirements.
6.How does Aetrix verify that NNCD11F-T1B-AT is sourced from the original manufacturer or authorized distributors?
All NNCD11F-T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD11F-T1B-AT meets industry standards.
7.What is the process for return or replacement of NNCD11F-T1B-AT?
All NNCD11F-T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD11F-T1B-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD11F-T1B-AT part is unused and in its original packaging.
Return procedure for NNCD11F-T1B-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD11F-T1B-AT Tags
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