My Inquiry
My Account
Renesas NNCD12F-T1B-AT
- Part No.:
- NNCD12F-T1B-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD12F-T1B-AT.pdf
- Description:
- NNCD12F-T1B-AT - ELECTROSTATIC D
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NNCD12F-T1B-AT from Renesas Electronics is a double-element ESD noise clipping diode in SC-59 (EIAJ) 3-pin mini mold package, with 11.42–12.60 V breakdown voltage, ≤35 Ω dynamic impedance at 5 mA, ≤2 µA reverse leakage at 9.0 V, 70 pF capacitance at 1 MHz, and 30 kV IEC 1000-4-2 ESD endurance - used for USB, HDMI, and serial interface port protection.
For engineers reviewing the NNCD12F-T1B-AT datasheet, NNCD12F-T1B-AT pinout, NNCD12F-T1B-AT application, or NNCD12F-T1B-AT equivalent, key selection criteria include clamping voltage margin vs. system rail, low capacitance for high-speed signal integrity, common-anode dual-cathode topology for bidirectional line protection, and 200 mW total power dissipation derating above 25 °C ambient.
Technical Context
This device implements a dual-channel, anode-common transient voltage suppression structure optimized for electrostatic discharge immunity per IEC 61000-4-2 Level 4 (±30 kV contact). Each cathode-anode junction operates independently with matched breakdown characteristics and low dynamic impedance to clamp fast-rising transients below system IC damage thresholds.
It is designed for parallel connection across data lines where low capacitance (70 pF typ.) minimizes signal distortion, and its 100 W surge power rating (10 µs pulse) supports single-event robustness without thermal runaway. The SC-59 package enables surface-mount integration into compact external interface PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 11.42–12.60 V at 5 mA - defines minimum clamping onset threshold for overvoltage events on protected lines. |
| Dynamic Impedance (ZZ) | ≤35 Ω at 5 mA - determines voltage overshoot during ESD pulse; lower ZZ yields tighter clamping. |
| Reverse Leakage (IR) | ≤2 µA at 9.0 V - ensures minimal DC loading on high-impedance signal paths like I²C or UART. |
| Capacitance (CT) | 70 pF at 1 MHz, 0 V - limits bandwidth degradation on interfaces up to ~100 Mbps (e.g., USB 1.1, RS-485). |
| ESD Withstand (IEC 61000-4-2) | ≥30 kV contact discharge - meets industrial and commercial equipment immunity requirements without external circuitry. |
| Surge Power (PRSM) | 100 W (10 µs, non-repetitive) - handles single high-energy transients without failure under defined test conditions. |
| Power Dissipation (PD) | 200 mW total (TA = 25 °C) - requires thermal derating above ambient; e.g., ~120 mW at 85 °C. |
Pinout & Package
Package: SC-59 (EIAJ), 3-pin mini mold, surface-mount, anode-common dual-diode configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | Connects to first protected signal line (e.g., D+ of USB); conducts when line voltage exceeds VBR relative to common anode. |
| 2 | Cathode 2 (K2) | Connects to second protected signal line (e.g., D− of USB); electrically isolated from K1 but shares common anode node. |
| 3 | Anode (A) | Common reference terminal; typically tied to system ground or low-impedance return path to complete clamping loop. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel common-anode topology | Enables symmetrical bidirectional ESD protection for differential pairs (e.g., USB, RS-422) with single-component footprint. |
| 30 kV IEC 61000-4-2 contact discharge rating | Exceeds Level 4 immunity requirement for industrial/commercial end-equipment without additional TVS staging. |
| 70 pF typical junction capacitance | Preserves signal rise/fall times on medium-speed digital interfaces; avoids timing skew or jitter in <100 Mbps links. |
| 200 mW total power dissipation | Supports continuous operation under low-duty-cycle surge conditions; thermal design must account for PCB copper area and ambient temperature. |
| SC-59 package compatibility | Matches standard SMT reflow profiles and pick-and-place tooling; footprint aligns with JEDEC MS-012 variant. |
Applications
| USB 2.0 Peripheral Port Protection | HDMI DDC Channel Protection |
|---|---|
|
Use Scenario: Protecting USB upstream ports on printers, scanners, and embedded peripherals against user-handling ESD events during cable insertion/removal. IC Role / Device Role / Timing Role: Clamping diode array placed between connector pins and USB transceiver IC, operating in reverse-bias standby until transient exceeds VBR. Use Value: Prevents latch-up or gate oxide damage in USB PHY by limiting peak line voltage to ≤15 V during ±30 kV contact discharge. |
Use Scenario: Safeguarding HDMI Display Data Channel (DDC) lines (SDA/SCL) from ESD during hot-plug events in AV receivers and set-top boxes. IC Role / Device Role / Timing Role: Dual-cathode configuration protects both DDC lines referenced to common ground, with low capacitance preserving I²C timing margins. Use Value: Maintains reliable EDID communication by suppressing transients while adding <1 ns propagation delay and no DC loading. |
| RS-485 Transceiver Interface Protection | Industrial Sensor Interface Protection |
|
Use Scenario: Shielding RS-485 bus nodes in factory automation systems exposed to field wiring ESD and inductive switching noise. IC Role / Device Role / Timing Role: Connected across A/B differential pair with common anode to ground; activates symmetrically on positive/negative surges. Use Value: Ensures uninterrupted Modbus RTU communication by clamping common-mode transients to <±20 V without disrupting DC bias or signal swing. |
Use Scenario: Protecting analog sensor outputs (e.g., 4–20 mA current loop or thermocouple amplifiers) in PLC I/O modules from installation-related ESD. IC Role / Device Role / Timing Role: Placed at connector entry point before signal conditioning stage; low leakage avoids offset errors in precision front-ends. Use Value: Preserves measurement accuracy (≤0.1% FS error) while enabling >100,000 connect/disconnect cycles without parameter drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR (Texas Instruments) | Single-channel, 0.5-pF capacitance, 12-V VBR, SC-70 package; lower capacitance but only one diode per package. | Requires two devices for dual-line protection; better suited for ultra-high-speed interfaces (>480 Mbps) where capacitance is critical. | Select when protecting individual high-frequency lines (e.g., PCIe Rx/Tx) and board space allows dual placement. |
| SMAJ12A (Littelfuse) | Single unidirectional TVS, 12-V standoff, 400-W peak pulse power, DO-214AC package; higher surge rating but 300-pF capacitance. | Not suitable for data lines >10 Mbps due to excessive capacitance; appropriate for power rail or low-speed control signal clamping. | Choose for DC power input protection or legacy RS-232 where speed is not constrained and higher energy handling is needed. |
Compared with TPD2E001DRYR and SMAJ12A, the NNCD12F-T1B-AT uniquely balances dual-line protection, 70-pF capacitance, and 30-kV ESD rating in a single SC-59 footprint - making it optimal for cost-sensitive, space-constrained medium-speed interface designs requiring integrated bidirectional clamping.
Availability
NNCD12F-T1B-AT is available at Aetrix Electronics and suitable for USB peripheral protection, HDMI DDC safeguarding, and RS-485 transceiver interface shielding requiring stable component supply and long-term production continuity.
Supply support for NNCD12F-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.
The NNCD12F-T1B-AT belongs to Renesas' ESD noise clipping diode family, engineered specifically for IEC 61000-4-2-compliant interface circuit protection in commercial and industrial equipment.
FAQ
What is the maximum operating temperature for NNCD12F-T1B-AT?
The NNCD12F-T1B-AT has a specified storage temperature range of –55 °C to +150 °C and a maximum junction temperature of 150 °C. Its power dissipation must be derated linearly above 25 °C ambient - for example, to ~120 mW at 85 °C ambient - to ensure the junction remains within safe thermal limits during sustained operation or repeated ESD events.
Does NNCD12F-T1B-AT support bidirectional ESD protection?
Yes, the NNCD12F-T1B-AT provides bidirectional ESD protection via its anode-common dual-cathode configuration: each cathode-anode junction conducts during positive transients on its respective line, while the common anode ties to ground, enabling symmetrical clamping for differential signals such as USB D+/D− or RS-485 A/B without polarity constraints.
Can NNCD12F-T1B-AT be used on high-speed interfaces like USB 3.0?
No, the NNCD12F-T1B-AT is not recommended for USB 3.0 or other >1 Gbps interfaces due to its 70 pF typical capacitance, which introduces excessive signal attenuation and jitter. It is validated for use on USB 2.0 (480 Mbps), HDMI DDC (100 kHz), and RS-485 (10 Mbps) where capacitance impact remains within acceptable margins.
What is the surge power rating of NNCD12F-T1B-AT and how is it tested?
The NNCD12F-T1B-AT has a non-repetitive surge reverse power rating of 100 W, measured under IEC 61000-4-5-like conditions: 10 µs pulse width, single-event application, with junction temperature maintained at 25 °C. This rating reflects short-duration transient energy absorption capability, not continuous power handling.
How does NNCD12F-T1B-AT compare to standard Zener diodes for ESD protection?
Unlike general-purpose Zener diodes, the NNCD12F-T1B-AT is characterized and qualified specifically for ESD immunity per IEC 61000-4-2, with guaranteed 30 kV contact discharge performance, tightly controlled dynamic impedance (<35 Ω), and low capacitance (70 pF). Standard Zeners lack these verified transient response metrics and may fail catastrophically under ESD stress.
NNCD12F-T1B-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V (Max)
- Voltage - Breakdown (Min):
- 11.42V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 70pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-Mini Mold
NNCD12F-T1B-AT FAQ
1.How can I place an order for NNCD12F-T1B-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD12F-T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD12F-T1B-AT reliable?
The price and inventory of NNCD12F-T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD12F-T1B-AT is usually 5 days.
3.What payment methods are accepted for NNCD12F-T1B-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD12F-T1B-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD12F-T1B-AT?
NNCD12F-T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD12F-T1B-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD12F-T1B-AT?
For technical support, including NNCD12F-T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD12F-T1B-AT requirements.
6.How does Aetrix verify that NNCD12F-T1B-AT is sourced from the original manufacturer or authorized distributors?
All NNCD12F-T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD12F-T1B-AT meets industry standards.
7.What is the process for return or replacement of NNCD12F-T1B-AT?
All NNCD12F-T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD12F-T1B-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD12F-T1B-AT part is unused and in its original packaging.
Return procedure for NNCD12F-T1B-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD12F-T1B-AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
