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Renesas NNCD18DT(0)-T1-AT
- Part No.:
- NNCD18DT(0)-T1-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
NNCD18DT(0)-T1-AT.pdf
- Description:
- NNCD18DT - ZENER DIODES FOR SURG
- Quantity:
- Payment:
- Shipping:
Inventory:57,000
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Product details
Overview
NNCD18DT(0)-T1-AT from Renesas Electronics is an electrostatic discharge (ESD) noise clipping diode designed for bidirectional transient suppression on LIN bus lines. It features a breakdown voltage of 16–20 V, 15 pF capacitance at 0 V, 85 W surge reverse power handling (10 μs pulse), 200 mW steady-state power dissipation, and complies with IEC61000-4-2 ESD immunity standards. It is used in automotive LIN transceiver protection circuits.
For engineers reviewing the NNCD18DT(0)-T1-AT datasheet, NNCD18DT(0)-T1-AT pinout, NNCD18DT(0)-T1-AT application, or NNCD18DT(0)-T1-AT equivalent, key selection criteria include bidirectional clamping capability, low 15 pF signal-line capacitance, SC-76 package compatibility with high-density PCB layouts, and verified 30 kV contact ESD performance per IEC61000-4-2.
Technical Context
This device operates as a two-terminal, symmetric Zener-type clamping diode with identical forward and reverse breakdown characteristics. Its bidirectional structure enables simultaneous suppression of positive and negative transients without polarity dependence, making it suitable for differential or single-ended LIN bus signal lines where ground-referenced noise spikes occur.
The SC-76 (2-pin Super Mini Mold) package supports surface-mount assembly on compact automotive control modules. Thermal performance is characterized for mounting on 50 mm × 50 mm × 1.6 mm glass-epoxy PCBs, with junction temperature limited to 150°C and storage range spanning −55°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 16–20 V - defines clamping threshold for both polarities; ensures reliable activation before LIN transceiver damage (typically ±40 V tolerance) |
| Capacitance | 15 pF at 0 V, 1 MHz - low enough to avoid signal integrity degradation on 19.2 kbps LIN bus |
| Surge Reverse Power | 85 W (10 μs pulse) - withstands high-energy ESD events per IEC61000-4-2 Level 4 (±30 kV contact) |
| Power Dissipation | 200 mW - limits thermal rise under continuous leakage or low-duty-cycle surges on standard FR-4 PCB |
| ESD Voltage Rating | 30 kV contact - validated performance against human-body-model ESD stress on LIN physical layer |
| Reverse Leakage | ≤0.1 μA at 12 V - negligible standby current draw, preserving LIN bus quiescent power budget |
Pinout & Package
Package: SC-76 (2-pin Super Mini Mold), dimensions 2.5 ±0.15 mm × 1.7 ±0.1 mm × 0.9 ±0.1 mm, lead-free pure tin plating, tape-and-reel packaging (3000 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode/Cathode (symmetric) | Bidirectional terminal - interchangeable; connects to LIN bus line (e.g., LIN\_H) for clamping to GND or VCC |
| 2 | Anode/Cathode (symmetric) | Bidirectional terminal - interchangeable; connects to reference plane (GND or VCC) depending on layout strategy |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional Clamping | Identical 16–20 V breakdown in both directions - eliminates need for dual-diode configurations or polarity-aware placement |
| IEC61000-4-2 Compliance | Rated for ≥30 kV contact discharge - meets automotive-grade ESD immunity requirements for LIN nodes |
| Low Signal-Line Capacitance | 15 pF at 0 V - preserves LIN bus rise/fall times and avoids bit-error-rate degradation at 19.2 kbps |
| High-Density Packaging | SC-76 footprint (2.5 × 1.7 mm) - enables placement adjacent to LIN transceiver ICs in space-constrained ECUs |
Applications
| LIN Bus Node Protection | Body Control Module (BCM) Interface |
|---|---|
Use Scenario: Protecting LIN slave devices (e.g., door lock actuators, mirror controls) from ESD coupling via long wiring harnesses. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between LIN bus line and chassis ground. Use Value: Prevents latch-up or permanent damage to LIN transceivers during assembly handling or service operations. | Use Scenario: Securing communication between BCM and distributed sensors (e.g., rain/light sensors) over LIN. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on LIN_H signal path, maintaining signal fidelity at 19.2 kbps. Use Value: Ensures robust operation across temperature extremes (−40°C to +125°C ambient) without signal distortion. |
| Steering Column Switch Interface | Roof Module LIN Network |
Use Scenario: Shielding LIN-connected multifunction switch assemblies from ESD generated by driver interaction. IC Role / Device Role / Timing Role: Surface-mounted clamping diode directly at connector entry point on PCB. Use Value: Reduces PCB trace inductance impact during fast ESD transients (<1 ns rise time), improving clamping response. | Use Scenario: ESD protection for LIN-linked sunroof, panoramic roof, or ambient lighting controllers. IC Role / Device Role / Timing Role: Symmetric diode bridging LIN bus to local ground plane in high-vibration roof module environments. Use Value: Maintains >1 million mating cycles reliability without parameter drift due to mechanical stress or thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD1E05U06DPYR | Lower 6.5 V breakdown (unidirectional), 0.6 pF capacitance, SOD-523 package | Better suited for high-speed data lines (USB, I²C); insufficient clamping margin for LIN bus voltage swing | Select only if protecting sub-10 V logic interfaces - not recommended for LIN physical layer |
| ESD9X5.0ST5G | 5.0 V unidirectional breakdown, 35 pF capacitance, SOD-923 package | Higher capacitance degrades LIN signal edges; requires external biasing for bidirectional use | Acceptable only with added series resistor and DC bias network - increases BOM count and board area |
Compared with TPD1E05U06DPYR and ESD9X5.0ST5G, the NNCD18DT(0)-T1-AT provides native bidirectional 16–20 V clamping optimized for LIN's ±40 V fault tolerance, lower system-level design complexity, and validated 30 kV ESD performance without auxiliary components.
Availability
NNCD18DT(0)-T1-AT is available at Aetrix Electronics and suitable for automotive body electronics, LIN-based sensor networks, and distributed control modules requiring stable component supply and long-term lifecycle support.
Supply support for NNCD18DT(0)-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power solutions for automotive and industrial markets.
The NNCD18DT(0)-T1-AT belongs to Renesas' dedicated ESD protection diode family for automotive serial buses, engineered specifically to meet stringent IEC61000-4-2 compliance and high-reliability deployment in LIN physical layer interfaces.
FAQ
What is the primary function of the NNCD18DT(0)-T1-AT in a LIN bus system?
The NNCD18DT(0)-T1-AT serves as a bidirectional ESD noise clipping diode that clamps transient voltages on the LIN bus line to protect downstream transceivers. It activates symmetrically at 16–20 V in both polarities, absorbing energy from electrostatic discharges up to 30 kV contact per IEC61000-4-2. Its 15 pF capacitance ensures minimal impact on the 19.2 kbps LIN signal waveform, and it is rated for 85 W surge power handling with a 10 μs pulse width. This makes the NNCD18DT(0)-T1-AT ideal for safeguarding LIN nodes in automotive body electronics.
Does the NNCD18DT(0)-T1-AT require polarity-specific placement on the PCB?
No, the NNCD18DT(0)-T1-AT does not require polarity-specific placement because it is a symmetric, bidirectional device. Pins 1 and 2 are functionally identical - either can connect to the LIN bus line and the other to ground (or VCC, depending on layout). This symmetry simplifies PCB routing and eliminates orientation errors during automated assembly. The SC-76 package has no marking to distinguish anode/cathode, confirming its interchangeable terminal design. This feature directly supports robust manufacturing of automotive control units where placement accuracy impacts yield.
What is the maximum operating temperature range for the NNCD18DT(0)-T1-AT?
The NNCD18DT(0)-T1-AT supports a junction temperature range of −55°C to +150°C and a storage temperature range of −55°C to +150°C. Its thermal performance is characterized for mounting on a 50 mm × 50 mm × 1.6 mm glass-epoxy PCB, where it delivers 200 mW steady-state power dissipation at 25°C ambient. At higher ambient temperatures, derating applies per Figure 1 in the datasheet - e.g., ~120 mW at 75°C ambient. These ratings align with Renesas' "High Quality" grade, qualifying the NNCD18DT(0)-T1-AT for under-hood and cabin applications in automotive systems.
How does the NNCD18DT(0)-T1-AT compare to generic TVS diodes for LIN protection?
The NNCD18DT(0)-T1-AT differs from generic TVS diodes by offering optimized 16–20 V bidirectional breakdown, 15 pF capacitance, and IEC61000-4-2 validation specifically for LIN bus voltage margins and data rate. Generic TVS diodes often exhibit higher capacitance (>50 pF), asymmetric clamping, or inadequate ESD test reporting. The NNCD18DT(0)-T1-AT's SC-76 footprint also enables tighter placement near connectors - reducing inductive loop area - whereas many TVS parts use larger SOD-323 or SMA packages. This targeted design reduces risk of signal distortion and improves system-level ESD immunity without additional filtering.
Is the NNCD18DT(0)-T1-AT compliant with automotive RoHS and lead-free requirements?
Yes, the NNCD18DT(0)-T1-AT is fully RoHS-compliant and lead-free. The ordering code "-T1-AT" specifies pure tin (Sn) lead plating on external electrodes, and the datasheet explicitly states "Pb-free (This product does not contain Pb in the external electrode and other parts)." It meets EU RoHS Directive 2011/65/EU and is suitable for automotive production where material compliance is audited. Renesas documents this status in the original D18880EJ1V0DS00 datasheet and confirms compatibility with standard reflow profiles for lead-free soldering (e.g., J-STD-020).
NNCD18DT(0)-T1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 12V (Max)
- Voltage - Breakdown (Min):
- 16V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 85W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 15pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-Super Mini Mold
NNCD18DT(0)-T1-AT FAQ
1.How can I place an order for NNCD18DT(0)-T1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD18DT(0)-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD18DT(0)-T1-AT reliable?
The price and inventory of NNCD18DT(0)-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD18DT(0)-T1-AT is usually 5 days.
3.What payment methods are accepted for NNCD18DT(0)-T1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD18DT(0)-T1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD18DT(0)-T1-AT?
NNCD18DT(0)-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD18DT(0)-T1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD18DT(0)-T1-AT?
For technical support, including NNCD18DT(0)-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD18DT(0)-T1-AT requirements.
6.How does Aetrix verify that NNCD18DT(0)-T1-AT is sourced from the original manufacturer or authorized distributors?
All NNCD18DT(0)-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD18DT(0)-T1-AT meets industry standards.
7.What is the process for return or replacement of NNCD18DT(0)-T1-AT?
All NNCD18DT(0)-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD18DT(0)-T1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD18DT(0)-T1-AT part is unused and in its original packaging.
Return procedure for NNCD18DT(0)-T1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD18DT(0)-T1-AT Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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