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Renesas NNCD3.3F-T1B-A
- Part No.:
- NNCD3.3F-T1B-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD3.3F-T1B-A.pdf
- Description:
- NNCD3.3F-T1B-A - ELECTROSTATIC D
- Quantity:
- Payment:
- Shipping:
Inventory:15,000
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Product details
Overview
NNCD3.3F-T1B-A from Renesas Electronics is a dual-channel ESD protection diode in SC-59 (EIAJ) 3-pin mini mold package, with 3.1–3.5 V breakdown voltage, ≤130 Ω dynamic impedance at 5 mA, 220 pF capacitance at 1 MHz, 30 kV IEC 1000-4-2 ESD endurance, and 200 mW total power dissipation - used for USB, serial, and parallel interface port protection.
For engineers reviewing the NNCD3.3F-T1B-A datasheet, NNCD3.3F-T1B-A pinout, NNCD3.3F-T1B-A application, or NNCD3.3F-T1B-A equivalent, key selection criteria include common-anode dual-cathode topology, low clamping impedance under transient stress, sub-1 V forward voltage drop, and compatibility with high-speed data lines requiring <250 pF capacitance.
Technical Context
This device implements an anode-common dual-diode configuration optimized for bidirectional ESD suppression on differential or independent signal lines. It operates as a voltage-clamping element triggered above 3.1 V reverse breakdown, with fast response to ±30 kV contact discharge per IEC 1000-4-2 Level 4.
Its SC-59 package supports surface-mount assembly with thermal resistance suitable for intermittent surge handling up to 100 W (10 µs pulse), and its 220 pF junction capacitance is characterized at 1 MHz and 0 V bias - critical for preserving signal integrity in low-speed digital interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 3.10–3.50 V at 5 mA - defines minimum clamping threshold for ESD events on protected lines. |
| Dynamic Impedance (ZZ) | ≤130 Ω at 5 mA - ensures low-voltage overshoot during fast transients by limiting clamping rise. |
| Junction Capacitance (CT) | 220 pF at 1 MHz, 0 V - impacts signal rise/fall time; suitable for ≤10 Mbps interfaces. |
| ESD Withstand (IEC 1000-4-2) | ≥30 kV contact discharge - exceeds industrial immunity requirements for external ports. |
| Power Dissipation (PD) | 200 mW total - sets continuous thermal limit; derates linearly above 25 °C ambient. |
| Surge Reverse Power (PRSM) | 100 W (10 µs pulse) - defines single-event energy handling without degradation. |
| Junction Temperature (Tj) | 150 °C max - constrains PCB layout and copper pour for thermal management. |
Pinout & Package
SC-59 (EIAJ) 3-pin mini mold package: 2.9 mm × 1.5 mm × 1.1 mm body, gull-wing leads, tape-and-reel packaging (T1B-A suffix denotes 3,000 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. K1 | Cathode 1 | Connects to first protected signal line; reverse-biased during positive ESD strike on that line. |
| 2. K2 | Cathode 2 | Connects to second protected signal line; enables independent clamping for dual-line interfaces. |
| 3. A | Anode (common) | Biased to ground or local reference; forms shared return path for both clamping paths. |
Key Features
| Feature | Design Value |
|---|---|
| Anode-common dual-diode topology | Enables compact protection of two independent signals with shared ground reference and single footprint. |
| 30 kV IEC 1000-4-2 ESD rating | Meets highest industrial immunity level without external series impedance or filtering. |
| 220 pF junction capacitance | Preserves signal fidelity on RS-232, parallel printer, and low-speed USB 1.1 lines. |
| 130 Ω dynamic impedance | Clamps 8 kV ESD pulses to <12 V peak, protecting downstream logic inputs. |
| 200 mW total power rating | Supports repeated ESD events in consumer-grade equipment without thermal runaway. |
Applications
| USB 1.1 Peripheral Port | Parallel Printer Interface |
|---|---|
Use Scenario: Protection of D+ and D− lines on a USB device connector exposed to user-handling ESD. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed directly at connector, shunting ESD current to chassis ground before reaching USB transceiver. Use Value: Prevents latch-up or gate oxide damage in USB PHY ICs by limiting transient voltage to <10 V during 30 kV contact discharge. | Use Scenario: Shielding 8-bit data bus and control lines (STROBE, ACK, BUSY) of a Centronics parallel port. IC Role / Device Role / Timing Role: Common-anode dual-diode array clamping each signal to ground, minimizing crosstalk during multi-line surges. Use Value: Maintains signal timing margins with 220 pF loading while surviving repeated 15 kV air discharge events per line. |
| RS-232 Transceiver I/O | Legacy Audio/Video Interface |
Use Scenario: Input/output protection of MAX232-level signals on DB9 serial ports in industrial HMIs. IC Role / Device Role / Timing Role: Low-capacitance clamp on TX/RX lines, placed between connector and transceiver to reduce ESD-induced reset faults. Use Value: Eliminates false framing errors caused by ESD-induced noise spikes exceeding receiver input thresholds. | Use Scenario: Protection of composite video (CVBS) and stereo audio (L/R) outputs on set-top boxes or DVD players. IC Role / Device Role / Timing Role: DC-blocking clamp on analog signal paths, suppressing ESD without distorting 0–6 MHz video bandwidth. Use Value: Avoids visible screen flash or audio pop during hot-plug events while maintaining <0.5 dB insertion loss at 1 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4105MR6T1G | Quad-channel, 5.5 V VBR, 120 pF, SOT-23-6 package | Higher channel count but higher breakdown voltage; lower capacitance suits faster interfaces | Select when protecting four lines simultaneously or requiring <150 pF loading |
| Vishay VTVS5V0A-GS08 | Single-channel, 5.0 V VBR, 170 pF, SOD-323 package | Single-diode configuration requires two devices for dual-line use; tighter VBR tolerance | Select when board space allows discrete placement per line and 5 V rail clamping is preferred |
Compared with NNCD3.3F-T1B-A, the NUP4105MR6T1G offers greater integration but less precise 3.3 V clamping, while the VTVS5V0A-GS08 provides tighter parameter control at the cost of doubled component count and reduced layout efficiency for dual-signal protection.
Availability
NNCD3.3F-T1B-A is available at Aetrix Electronics and suitable for USB peripheral design, parallel printer interface development, and RS-232 transceiver protection requiring stable component supply and long-term production continuity.
Supply support for NNCD3.3F-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and consumer systems.
The NNCD3.3F-T1B-A belongs to Renesas' ESD noise clipping diode product line, designed specifically for robust, low-cost interface-level transient suppression in standard-grade consumer and office electronics.
FAQ
What is the maximum operating temperature for NNCD3.3F-T1B-A?
The NNCD3.3F-T1B-A has a maximum junction temperature of 150 °C and a storage temperature range of –55 °C to +150 °C. Its power dissipation derates linearly above 25 °C ambient, reaching zero at approximately 125 °C case temperature. For reliable operation in enclosed environments, ensure PCB copper area and airflow maintain Tj below 135 °C during worst-case ESD events. The NNCD3.3F-T1B-A datasheet specifies thermal impedance curves confirming safe operation within these limits.
Does NNCD3.3F-T1B-A support bidirectional ESD protection?
Yes, the NNCD3.3F-T1B-A provides bidirectional ESD protection via its anode-common dual-cathode structure: each cathode (K1/K2) clamps positive transients to ground, while the common anode (A) conducts negative transients from ground to the protected line. This architecture enables full ±30 kV IEC 1000-4-2 compliance on both signal polarities without external biasing. The NNCD3.3F-T1B-A achieves this using symmetric silicon junction characteristics confirmed in its electrical characteristics table.
Can NNCD3.3F-T1B-A be used on high-speed USB 2.0 lines?
No, the NNCD3.3F-T1B-A is not recommended for USB 2.0 (480 Mbps) due to its 220 pF junction capacitance, which would severely degrade signal integrity and fail eye diagram compliance. It is validated for USB 1.1 (12 Mbps) and lower-speed interfaces like RS-232 or parallel ports. For USB 2.0, select low-capacitance alternatives (<5 pF) such as the ON Semiconductor ESD9X5.0ST5G. The NNCD3.3F-T1B-A datasheet explicitly characterizes performance only up to 10 Mbps-equivalent signaling.
What is the meaning of the "T1B-A" suffix in NNCD3.3F-T1B-A?
The "T1B-A" suffix indicates tape-and-reel packaging: T = tape-and-reel, 1B = 3,000 units per reel, and A = standard carrier tape specification compliant with EIA-481. This packaging format ensures automated SMT placement compatibility and moisture sensitivity level (MSL) 1 handling. The NNCD3.3F-T1B-A is not available in bulk or tube variants - all production shipments use this T1B-A configuration per Renesas' packaging standard for SC-59 devices.
How does NNCD3.3F-T1B-A compare to TVS diodes like SMAJ3.3A?
The NNCD3.3F-T1B-A differs from unidirectional TVS diodes like SMAJ3.3A in topology (dual-cathode common-anode vs. single-anode/cathode), capacitance (220 pF vs. ~500 pF), and application focus (interface-level ESD vs. board-level surge). SMAJ3.3A handles higher energy (400 W) but lacks the compact dual-line integration of the NNCD3.3F-T1B-A. The NNCD3.3F-T1B-A is optimized for localized, low-inductance placement at connectors, whereas SMAJ3.3A targets bulk power rail protection.
NNCD3.3F-T1B-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 1V (Max)
- Voltage - Breakdown (Min):
- 3.1V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 220pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-Mini Mold
NNCD3.3F-T1B-A FAQ
1.How can I place an order for NNCD3.3F-T1B-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD3.3F-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD3.3F-T1B-A reliable?
The price and inventory of NNCD3.3F-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD3.3F-T1B-A is usually 5 days.
3.What payment methods are accepted for NNCD3.3F-T1B-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD3.3F-T1B-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD3.3F-T1B-A?
NNCD3.3F-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD3.3F-T1B-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD3.3F-T1B-A?
For technical support, including NNCD3.3F-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD3.3F-T1B-A requirements.
6.How does Aetrix verify that NNCD3.3F-T1B-A is sourced from the original manufacturer or authorized distributors?
All NNCD3.3F-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD3.3F-T1B-A meets industry standards.
7.What is the process for return or replacement of NNCD3.3F-T1B-A?
All NNCD3.3F-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD3.3F-T1B-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD3.3F-T1B-A part is unused and in its original packaging.
Return procedure for NNCD3.3F-T1B-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD3.3F-T1B-A Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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