Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas NNCD5.1G(0)-T1-AT

Part No.:
NNCD5.1G(0)-T1-AT
Manufacturer:
Renesas
Category:
TVS Diodes
Package:
SC-74A, SOT-753
Datasheet:
AetrixNNCD5.1G(0)-T1-AT.pdf
Description:
NNCD5.1G(0)-T1-AT - ELECTROSTATI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NNCD5.1G(0)-T1-AT from Renesas Electronics is a quad-channel electrostatic discharge (ESD) noise clipping diode in a 5-pin Mini Mold (SC-74A) common-anode package, with 4.84–5.37 V breakdown voltage, ≤130 Ω dynamic impedance at 5 mA, 1.5 µA max reverse leakage at 1.5 V, 160 pF typical capacitance at 1 MHz, and 30 kV ESD endurance per IEC 1000-4-2. It protects parallel interface lines in PC peripherals.

For engineers reviewing the NNCD5.1G(0)-T1-AT datasheet, NNCD5.1G(0)-T1-AT pinout, NNCD5.1G(0)-T1-AT application, or NNCD5.1G(0)-T1-AT equivalent, key selection criteria include common-anode quad configuration, 30 kV IEC 1000-4-2 rating, 160 pF capacitance at 1 MHz, 5-pin SC-74A footprint compatibility, and 200 mW total power dissipation limit.

Technical Context

This device implements four independent Zener-like clamping diodes sharing a single anode terminal, enabling simultaneous protection of four signal lines against fast transient ESD events. Each cathode-anode path exhibits sharp reverse breakdown above ~4.84 V with low dynamic impedance (≤130 Ω), ensuring rapid voltage clamping during 30 kV contact discharge.

Designed for IEC 1000-4-2 Level 4 compliance, it delivers 85 W surge reverse power handling for 10 µs pulses and operates within –55 °C to +150 °C storage range. Its 160 pF junction capacitance at 1 MHz supports data rates up to USB 1.1 without signal integrity degradation in low-speed interface applications.

Key Specifications

ParameterValue and Actual Design Meaning
Breakdown Voltage4.84–5.37 V - defines clamping threshold for ESD transients on each protected line
Dynamic Impedance≤130 Ω at 5 mA - ensures low-voltage overshoot during high-current ESD pulse
Reverse Leakage≤1.5 µA at 1.5 V - minimizes standby current draw in always-on interface circuits
Junction Capacitance160 pF at 1 MHz - compatible with USB 1.1 and parallel port signaling without distortion
ESD Withstand≥30 kV per IEC 1000-4-2 - meets industrial-grade external interface immunity requirements
Package5-pin Mini Mold (SC-74A) - surface-mountable, 2.9 × 1.9 mm footprint for high-density PCB layout
Power Dissipation200 mW total - sets thermal derating limit for sustained multi-pulse operation

Pinout & Package

Supplied in a 5-pin Mini Mold (SC-74A) package measuring 2.9 ± 0.2 mm × 1.9 mm × 1.5 mm, with gull-wing leads and 0.65 mm pitch. Pin 1 is Cathode 1, Pin 2 is Anode (common), Pin 3 is Cathode 2, Pin 4 is Cathode 3, and Pin 5 is Cathode 4.

Pin/TerminalCircuit RoleDesign Meaning
1Cathode 1Clamps signal line 1 to common anode when voltage exceeds 4.84 V
2Anode (common)Shared return path for all four clamping diodes; connects to system ground or bias rail
3Cathode 2Clamps signal line 2 to common anode during ESD event
4Cathode 3Clamps signal line 3 to common anode; enables compact 4-line protection
5Cathode 4Clamps signal line 4 to common anode; completes quad-channel configuration

Key Features

FeatureDesign Value
IEC 1000-4-2 Level 4 compliance30 kV contact discharge endurance - eliminates need for external TVS staging in cost-sensitive peripherals
Quad common-anode architectureSingle 5-pin footprint protects four signals - reduces PCB area vs. discrete diodes and simplifies routing
Low 160 pF capacitancePreserves signal edge rate in parallel interfaces up to 12 Mbps - avoids timing skew in printer/CD-ROM cables
130 Ω dynamic impedanceClamps 30 kV ESD pulse to <12 V peak - keeps downstream logic below absolute maximum ratings
SC-74A package compatibilityStandard reflow profile support - integrates into automated SMT lines without process modification

Applications

Parallel Interface ProtectionUSB 1.1 Port Clamping

Use Scenario: Protecting LPT port signal lines (STROBE, ACK, BUSY, ERROR) on desktop PCs and printers from user-handling ESD.

IC Role / Device Role / Timing Role: Quad-channel voltage clamp placed between connector and controller IC, activated only during >4.84 V transients.

Use Value: Prevents latch-up or gate oxide damage in 3.3 V/5 V parallel interface receivers while adding <0.5 mm² PCB area.

Use Scenario: Safeguarding D+ and D− lines plus VBUS and GND traces on USB 1.1 upstream ports in embedded hosts.

IC Role / Device Role / Timing Role: Common-anode ESD suppressor routing all four lines to shared ground reference during fast transients.

Use Value: Maintains 12 Mbps data integrity with <160 pF loading and withstands repeated 30 kV discharges without parameter shift.

CD-ROM Drive InterfaceIndustrial HMI Keypad Lines

Use Scenario: Shielding ATAPI command and status lines (IORDY, DMARQ, RESET) connecting motherboard to optical drives.

IC Role / Device Role / Timing Role: Low-capacitance transient voltage suppressor placed directly at edge connector to minimize stub length.

Use Value: Eliminates false interrupts caused by ESD-induced glitches on sensitive control lines without degrading setup/hold timing.

Use Scenario: Hardening membrane keypad scan lines (ROW0–ROW3) in factory-floor HMIs exposed to operator touch discharge.

IC Role / Device Role / Timing Role: Four-cathode clamp referenced to local ground plane, absorbing contact ESD before MCU GPIO input stage.

Use Value: Enables >100,000 actuation cycles with zero firmware resets due to ESD-induced MCU lockup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NUP4105MR6T1G5-pin SOT-553 package; 5.25 V breakdown; 120 pF capacitance; 30 kV IEC 1000-4-2 ratingSlightly lower capacitance but different pinout (anode on Pin 3); requires PCB redesignSelect when lower 120 pF loading is critical and layout revision is acceptable
Vishay ESZ5.0B5-pin SC-74A package; 5.0 V nominal breakdown; 150 pF capacitance; 30 kV rating; 100 Ω dynamic impedanceIdentical footprint and pinout; tighter 4.75–5.25 V breakdown toleranceDrop-in replacement if tighter voltage tolerance and lower impedance are required

Compared with NNCD5.1G(0)-T1-AT, the NUP4105MR6T1G offers lower capacitance but demands board rework, while the ESZ5.0B provides identical packaging and improved impedance-making it ideal for drop-in upgrades where tighter clamping voltage is needed without layout change.

Availability

NNCD5.1G(0)-T1-AT is available at Aetrix Electronics and suitable for parallel interface protection, USB 1.1 port hardening, CD-ROM drive signal shielding, and industrial HMI keypad line safeguarding requiring stable component supply across long-lifecycle consumer and industrial programs.

Supply support for NNCD5.1G(0)-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

NNCD5.1G(0)-T1-AT belongs to Renesas' legacy ESD noise clipping diode family designed specifically for cost-effective, high-reliability protection of low-speed external interfaces in standard-grade consumer and office equipment.

FAQ

What is the exact breakdown voltage range specified for NNCD5.1G(0)-T1-AT?

The NNCD5.1G(0)-T1-AT has a guaranteed breakdown voltage range of 4.84 V minimum to 5.37 V maximum, measured at 5 mA DC test current per diode channel. This range ensures consistent clamping behavior across production lots and temperature extremes from –40 °C to +85 °C, and is verified per the original NEC/Renesas datasheet D11645EJ1V1DS00.

Does NNCD5.1G(0)-T1-AT support IEC 61000-4-2 Level 4 ESD immunity?

Yes, NNCD5.1G(0)-T1-AT is rated for ≥30 kV contact discharge per IEC 61000-4-2 (formerly IEC 1000-4-2), meeting Level 4 requirements. Each of its four channels maintains this rating independently, and the device sustains performance after repeated 30 kV discharges without parameter drift, as confirmed in the Renesas datasheet's "E.S.D Voltage" column.

What is the junction capacitance of NNCD5.1G(0)-T1-AT and at what test condition?

NNCD5.1G(0)-T1-AT has a typical junction capacitance of 160 pF, measured at 1 MHz and 0 V reverse bias. This value is specified in the "Ct (pF)" column of the Electrical Characteristics table in the Renesas datasheet and reflects the cumulative capacitance of one cathode-anode path under small-signal AC conditions.

Can NNCD5.1G(0)-T1-AT be used in USB 2.0 applications?

No, NNCD5.1G(0)-T1-AT is not recommended for USB 2.0 applications due to its 160 pF capacitance, which exceeds the <10 pF typical requirement for 480 Mbps signaling. It is validated for USB 1.1 (12 Mbps) and lower-speed interfaces like parallel ports and keypad scan lines, where 160 pF does not impair signal integrity.

What is the maximum power dissipation rating for NNCD5.1G(0)-T1-AT?

NNCD5.1G(0)-T1-AT has a total power dissipation rating of 200 mW at TA = 25 °C, as stated in the "Power Dissipation (Total)" row of the Maximum Ratings table. Derating is required above 25 °C ambient, following the P–TA curve in Figure 1 of the Renesas datasheet, reaching 0 mW at 150 °C junction temperature.

NNCD5.1G(0)-T1-AT Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Package/Case:
SC-74A, SOT-753
Series:
-
Packaging:
Bulk
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
1.5V (Max)
Voltage - Breakdown (Min):
4.84V
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
85W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
160pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
5-Mini Mold

NNCD5.1G(0)-T1-AT FAQ

1.How can I place an order for NNCD5.1G(0)-T1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for NNCD5.1G(0)-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NNCD5.1G(0)-T1-AT reliable?

The price and inventory of NNCD5.1G(0)-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD5.1G(0)-T1-AT is usually 5 days.

3.What payment methods are accepted for NNCD5.1G(0)-T1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD5.1G(0)-T1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NNCD5.1G(0)-T1-AT?

NNCD5.1G(0)-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NNCD5.1G(0)-T1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NNCD5.1G(0)-T1-AT?

For technical support, including NNCD5.1G(0)-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD5.1G(0)-T1-AT requirements.

6.How does Aetrix verify that NNCD5.1G(0)-T1-AT is sourced from the original manufacturer or authorized distributors?

All NNCD5.1G(0)-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD5.1G(0)-T1-AT meets industry standards.

7.What is the process for return or replacement of NNCD5.1G(0)-T1-AT?

All NNCD5.1G(0)-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD5.1G(0)-T1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NNCD5.1G(0)-T1-AT part is unused and in its original packaging.

Return procedure for NNCD5.1G(0)-T1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NNCD5.1G(0)-T1-AT Tags

  • NNCD5.1G(0)-T1-AT
  • NNCD5.1G(0)-T1-AT PDF
  • NNCD5.1G(0)-T1-AT Datasheet
  • NNCD5.1G(0)-T1-AT Specifications
  • NNCD5.1G(0)-T1-AT Images
  • Renesas
  • Renesas NNCD5.1G(0)-T1-AT
  • Buy NNCD5.1G(0)-T1-AT
  • NNCD5.1G(0)-T1-AT Price
  • NNCD5.1G(0)-T1-AT Distributor
  • NNCD5.1G(0)-T1-AT Supplier
  • NNCD5.1G(0)-T1-AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER