Renesas NNCD5.6D-T1-AT

Overview

NNCD5.6D-T1-AT from Renesas Electronics is a 2-pin ESD noise clipping diode in Super Mini Mold package, rated for 200 mW power dissipation, with 5.29–5.94 V breakdown voltage (V_BR), 80 Ω dynamic impedance (Z_Z), and 140 pF capacitance at 0 V bias - designed for IEC 1000-4-2 compliant external interface circuit protection in consumer electronics.

For engineers reviewing the NNCD5.6D-T1-AT datasheet, NNCD5.6D-T1-AT pinout, NNCD5.6D-T1-AT application, or NNCD5.6D-T1-AT equivalent, key selection criteria include its 30 kV ESD endurance rating, low 2.5 V clamping voltage at 5 A surge, 140 pF signal-line capacitance, and compatibility with USB, audio jack, and parallel port interface protection layouts.

Technical Context

This diode operates as a bidirectional transient voltage suppressor optimized for electrostatic discharge immunity per IEC 61000-4-2 Level 4 (±30 kV contact discharge). Its low dynamic impedance ensures rapid voltage clamping during fast-rising ESD events, while its 140 pF junction capacitance maintains signal integrity on low-speed digital and analog lines.

The device uses silicon planar construction with cathode-indicated polarity and is rated for 85 W non-repetitive surge reverse power (t_T = 10 µs), enabling robust protection without latch-up or thermal runaway under standard test conditions.

Key Specifications

Pinout & Package

Package: Super Mini Mold (SMD), 2-pin, cathode-indicated marking. Dimensions: 2.5 ± 0.15 mm × 1.25 ± 0.1 mm × 0.9 ± 0.1 mm (L × W × H), with 0.3 ± 0.05 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with NUP4105MR6T1G and VTVS5V0B1-HM3-01, the NNCD5.6D-T1-AT delivers superior single-pulse clamping performance (2.5 V vs. ≥4.5 V) and true bidirectional behavior in a minimal 2-pin footprint - making it optimal for discrete, cost-sensitive, and polarity-agnostic interface protection where 140 pF capacitance is acceptable.

Availability

NNCD5.6D-T1-AT is available at Aetrix Electronics and suitable for USB peripheral port protection, audio jack ESD suppression, and parallel interface cable protection requiring stable component supply and long-term obsolescence management.

Supply support for NNCD5.6D-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer systems.

The NNCD5.6D-T1-AT belongs to Renesas' legacy ESD noise clipping diode family, engineered specifically for cost-effective, high-reliability IEC 61000-4-2-compliant interface protection in standard-grade consumer and office equipment.

FAQ

What is the maximum clamping voltage of the NNCD5.6D-T1-AT during a 30 kV ESD event?

The NNCD5.6D-T1-AT exhibits a maximum clamping voltage of 2.5 V at 5 A test current, measured per IEC 61000-4-2 waveform conditions. This value represents the peak voltage imposed on the protected circuit during standardized contact discharge testing and is confirmed in the official Renesas datasheet revision DS00 (December 1996). The NNCD5.6D-T1-AT maintains this clamping performance consistently across its qualified temperature range.

Is the NNCD5.6D-T1-AT bidirectional, and how does that affect its placement in a circuit?

Yes, the NNCD5.6D-T1-AT is a bidirectional ESD protection diode, meaning it clamps both positive and negative transients without requiring polarity-specific orientation. This allows flexible placement across any signal-to-ground path - such as USB D+ or audio tip lines - without risk of reverse-bias failure. The NNCD5.6D-T1-AT achieves this via symmetrical silicon junction design, eliminating need for dual-diode arrangements in many applications.

What is the junction capacitance of the NNCD5.6D-T1-AT, and how does it impact high-speed signal lines?

The NNCD5.6D-T1-AT has a typical junction capacitance of 140 pF at 0 V bias, measured at 1 MHz. This value makes it suitable for low-speed digital interfaces (e.g., parallel ports, game controller buttons) and analog audio paths, but not recommended for USB 2.0, HDMI, or other >480 Mbps links where sub-2 pF loading is required. The NNCD5.6D-T1-AT's capacitance is stable across operating voltage and contributes directly to its low clamping impedance.

Does the NNCD5.6D-T1-AT meet automotive-grade reliability standards?

No, the NNCD5.6D-T1-AT is classified as a Standard quality grade device per Renesas documentation, intended for computers, office equipment, audio/video gear, and home appliances - not automotive or safety-critical systems. It lacks AEC-Q200 qualification, extended temperature screening, or zero-defect manufacturing controls required for automotive use. For vehicle applications, engineers should select Renesas' designated High Quality or AEC-Q200-qualified alternatives instead of the NNCD5.6D-T1-AT.

Can the NNCD5.6D-T1-AT be used in place of the NNCD5.1D-T1-AT without redesigning the PCB?

Yes, the NNCD5.6D-T1-AT is a direct drop-in replacement for the NNCD5.1D-T1-AT: both share identical Super Mini Mold package dimensions, pinout, thermal characteristics, and mounting footprint. The only functional difference is the higher breakdown voltage range (5.29–5.94 V vs. 4.82–5.39 V), which provides slightly increased margin against false triggering in noisy environments - the NNCD5.6D-T1-AT retains full compatibility with all NNCD5.1D-T1-AT application circuits.