Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas NNCD6.2LG(1)-T1-A

Part No.:
NNCD6.2LG(1)-T1-A
Manufacturer:
Renesas
Category:
TVS Diodes
Package:
SC-74A, SOT-753
Datasheet:
AetrixNNCD6.2LG(1)-T1-A.pdf
Description:
NNCD6.2LG(1)-T1-A - LOW CAPACITA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:27,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NNCD6.2LG(1)-T1-A from Renesas Electronics is a low-capacitance quad ESD protection diode in a 5-pin mini mold package with common-anode configuration. It delivers 5.7–6.7 V breakdown voltage, ≤8 Ω dynamic impedance, ≤2 µA reverse leakage at 3.0 V, 8 pF capacitance at 1 MHz, and 8 kV IEC 1000-4-2 contact discharge ESD immunity - optimized for USB 2.0 data line protection.

For engineers reviewing the NNCD6.2LG(1)-T1-A datasheet, NNCD6.2LG(1)-T1-A pinout, NNCD6.2LG(1)-T1-A application, or NNCD6.2LG(1)-T1-A equivalent, key selection criteria include low inter-electrode capacitance, guaranteed 8 kV ESD robustness, common-anode quad topology for bidirectional signal line clamping, and compatibility with high-density PCB layouts requiring compact 5-pin surface-mount packaging.

Technical Context

This device implements four identical silicon avalanche diodes connected in a common-anode (quarto) configuration, enabling simultaneous clamping of four independent signal lines to ground during ESD transients. Each cathode-anode path exhibits sharp, repeatable breakdown at 5.7–6.7 V with sub-8 Ω dynamic impedance under 5 mA test current.

Designed specifically for I/O line protection in high-speed digital interfaces, it maintains signal integrity via 8 pF terminal-to-terminal capacitance (measured at VR = 0 V, f = 1 MHz) and supports transient surge power dissipation up to 2 W for 10 µs pulses without degradation.

Key Specifications

ParameterValue and Actual Design Meaning
Breakdown Voltage (VBR)5.7–6.7 V min/max at 5 mA - defines precise clamping threshold before conduction begins on each cathode-anode path.
Dynamic Impedance (ZZ)≤50 Ω max at 5 mA - ensures low-voltage overshoot during fast ESD events by limiting clamping voltage rise.
Reverse Leakage (IR)≤2 µA max at 3.0 V - minimizes standby current draw and prevents signal distortion on idle data lines.
Capacitance (Ct)8 pF typ at VR = 0 V, f = 1 MHz - preserves USB 2.0 signal edge rates and eye diagram integrity.
ESD Withstand (IEC 1000-4-2)8 kV contact discharge - meets industrial-grade interface immunity requirements without external circuitry.
Package5-pin mini mold - enables 2.8 × 2.9 mm footprint with 0.65 mm pitch for space-constrained USB port routing.

Pinout & Package

Supplied in a surface-mount 5-pin mini mold package (2.8 mm × 2.9 mm × 1.1–1.4 mm height) with gull-wing leads and JEDEC-standard thermal pad exposure.

Pin/TerminalCircuit RoleDesign Meaning
1Cathode 1 (K1)ESD clamp node for first protected signal line (e.g., USB D+)
2Anode (A, Common)Shared anode tied to system ground - forms single-point return path for all four clamps
3Cathode 2 (K2)ESD clamp node for second protected signal line (e.g., USB D−)
4Cathode 3 (K3)ESD clamp node for third signal line (e.g., VBUS sense or ID line)
5Cathode 4 (K4)ESD clamp node for fourth signal line (e.g., shield or auxiliary control)

Key Features

FeatureDesign Value
Quad common-anode topologyEnables compact protection of four independent signal paths using one ground connection and minimal board area.
8 kV IEC 1000-4-2 contact discharge ratingGuarantees reliable operation in real-world handling environments without derating or additional TVS stages.
8 pF inter-terminal capacitancePreserves signal bandwidth up to ~200 MHz - suitable for full-speed USB 2.0 (480 Mbps) without jitter penalty.
2 W surge power capability (10 µs pulse)Handles multiple ESD strikes without parametric shift or catastrophic failure under typical interface stress conditions.

Applications

USB 2.0 Interface ProtectionIndustrial Serial Port ESD Guard

Use Scenario: Protecting D+/D− differential pair and VBUS/ID lines on embedded USB host/device ports exposed to frequent human contact.

IC Role / Device Role / Timing Role: Low-capacitance bidirectional transient voltage suppressor placed directly at connector entry point.

Use Value: Prevents latch-up and gate oxide damage in USB transceivers while maintaining <1% signal attenuation at 240 MHz.

Use Scenario: Safeguarding RS-232/RS-485 transceiver I/O pins in factory automation panels subject to maintenance technician ESD events.

IC Role / Device Role / Timing Role: Standalone ESD shunt clamp with grounded common anode, installed before level-shifting circuitry.

Use Value: Eliminates need for discrete 0402 TVS diodes per line - reduces BOM count by 75% and layout complexity.

Consumer Audio Docking StationMedical Data Acquisition Module

Use Scenario: Shielding audio sync and control lines (e.g., I²C, USB ID) in smartphone docking cradles where repeated plug/unplug causes charge accumulation.

IC Role / Device Role / Timing Role: Quad-channel ESD absorber with shared ground reference to minimize ground bounce during multi-line discharge.

Use Value: Maintains <10 ps timing skew across all protected lines - critical for synchronized charging and accessory detection.

Use Scenario: Protecting isolated CAN/USB diagnostic ports on portable patient monitors used in clinical settings with high static potential floors.

IC Role / Device Role / Timing Role: Non-intrusive ESD front-end guard that adds no propagation delay to time-critical sensor data streams.

Use Value: Ensures uninterrupted 12-bit ADC sampling during electrostatic discharge - avoids false alarm triggers or missed vital signs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPD2E001DRYRLower capacitance (3 pF), dual-channel only, requires separate ground connections per channel.Limited to two-line protection; unsuitable for 4-signal USB layouts without duplication.Select when ultra-low capacitance is prioritized over channel count and board area.
ESD5V3U2U-2/TRHigher capacitance (12 pF), same 5-pin quarto package, 12 kV ESD rating but higher leakage (5 µA).Better surge margin but degrades USB signal integrity above 120 MHz; not recommended for full-speed USB.Prefer for industrial RS-485 nodes where ESD margin outweighs bandwidth constraints.

Compared with TPD2E001DRYR and ESD5V3U2U-2/TR, NNCD6.2LG(1)-T1-A uniquely balances 4-channel integration, 8 pF capacitance, and guaranteed 8 kV immunity in a single 5-pin footprint - making it optimal for space-constrained USB 2.0 designs requiring deterministic clamping behavior without signal degradation.

Availability

NNCD6.2LG(1)-T1-A is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial serial port hardening, and consumer docking station designs requiring stable component supply and long-term production continuity.

Supply support for NNCD6.2LG(1)-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

NNCD6.2LG(1)-T1-A belongs to Renesas' legacy low-capacitance ESD clipping diode family, engineered specifically for high-speed data bus protection where signal fidelity and compact layout are critical design constraints.

FAQ

What is the maximum operating temperature for NNCD6.2LG(1)-T1-A?

The NNCD6.2LG(1)-T1-A has a specified junction temperature limit of 150°C and a storage temperature range of –55°C to +150°C. Its thermal resistance allows continuous operation at ambient temperatures up to 125°C when mounted on standard FR-4 PCBs with adequate copper pour, as confirmed by the transient thermal impedance curve in the original Renesas datasheet D12785EJ1V0DS00.

Does NNCD6.2LG(1)-T1-A support both contact and air-gap ESD testing per IEC 1000-4-2?

Yes, the NNCD6.2LG(1)-T1-A is rated for 8 kV contact discharge per IEC 1000-4-2. While the datasheet specifies contact discharge performance explicitly, air-gap testing is not characterized for this part - design validation for air-gap scenarios should be performed empirically or with higher-rated alternatives if required.

Can NNCD6.2LG(1)-T1-A be used for HDMI or PCIe signal line protection?

No, NNCD6.2LG(1)-T1-A is not recommended for HDMI or PCIe. Its 8 pF capacitance exceeds the ≤0.5 pF requirement for HDMI 2.0 and PCIe Gen3 signal integrity, and its 5.7–6.7 V breakdown voltage is incompatible with the 0–3.3 V common-mode swing of those interfaces. It is validated only for USB 2.0 and similar lower-bandwidth buses.

Is the common anode of NNCD6.2LG(1)-T1-A internally bonded or externally accessible?

The common anode of NNCD6.2LG(1)-T1-A is externally accessible at Pin 2, as shown in the official pin connection diagram. This allows direct connection to system ground plane or local low-inductance ground pour - essential for achieving the specified 8 kV ESD performance and minimizing ground loop impedance during transient events.

What is the surge power rating of NNCD6.2LG(1)-T1-A and how is it applied?

NNCD6.2LG(1)-T1-A supports 2 W surge reverse power for 10 µs pulses (single event), as defined in Figure 5 of the Renesas datasheet D12785EJ1V0DS00. This rating applies across all four cathode-anode paths simultaneously when the common anode is properly grounded, enabling robust protection against repetitive ESD strikes without parameter drift or thermal runaway.

NNCD6.2LG(1)-T1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Package/Case:
SC-74A, SOT-753
Series:
-
Packaging:
Bulk
Product Status:
Obsolete
Type:
Steering (Rail to Rail)
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3V (Max)
Voltage - Breakdown (Min):
5.7V
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
2W
Power Line Protection:
No
Applications:
Telecom, USB
Capacitance @ Frequency:
8pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
5-Mini Mold

NNCD6.2LG(1)-T1-A FAQ

1.How can I place an order for NNCD6.2LG(1)-T1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for NNCD6.2LG(1)-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NNCD6.2LG(1)-T1-A reliable?

The price and inventory of NNCD6.2LG(1)-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.2LG(1)-T1-A is usually 5 days.

3.What payment methods are accepted for NNCD6.2LG(1)-T1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.2LG(1)-T1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NNCD6.2LG(1)-T1-A?

NNCD6.2LG(1)-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NNCD6.2LG(1)-T1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NNCD6.2LG(1)-T1-A?

For technical support, including NNCD6.2LG(1)-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.2LG(1)-T1-A requirements.

6.How does Aetrix verify that NNCD6.2LG(1)-T1-A is sourced from the original manufacturer or authorized distributors?

All NNCD6.2LG(1)-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.2LG(1)-T1-A meets industry standards.

7.What is the process for return or replacement of NNCD6.2LG(1)-T1-A?

All NNCD6.2LG(1)-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.2LG(1)-T1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NNCD6.2LG(1)-T1-A part is unused and in its original packaging.

Return procedure for NNCD6.2LG(1)-T1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NNCD6.2LG(1)-T1-A Tags

  • NNCD6.2LG(1)-T1-A
  • NNCD6.2LG(1)-T1-A PDF
  • NNCD6.2LG(1)-T1-A Datasheet
  • NNCD6.2LG(1)-T1-A Specifications
  • NNCD6.2LG(1)-T1-A Images
  • Renesas
  • Renesas NNCD6.2LG(1)-T1-A
  • Buy NNCD6.2LG(1)-T1-A
  • NNCD6.2LG(1)-T1-A Price
  • NNCD6.2LG(1)-T1-A Distributor
  • NNCD6.2LG(1)-T1-A Supplier
  • NNCD6.2LG(1)-T1-A Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER