Renesas NNCD6.2LG-T1-A
- Part No.:
- NNCD6.2LG-T1-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD6.2LG-T1-A.pdf
- Description:
- NNCD6.2LG-T1-A - LOW CAPACITANCE
- Quantity:
- Payment:

- Shipping:

Inventory:12,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NNCD6.2LG-T1-A from Renesas Electronics is a low-capacitance, quad-channel ESD protection diode in a 5-pin mini mold package with common-anode configuration. It delivers 8 kV IEC 1000-4-2 contact discharge ESD immunity, 8 pF reverse capacitance at 0 V/1 MHz, and 5.7–6.7 V breakdown voltage across four identical A–K channels - optimized for USB 2.0 and other high-speed data lines.
For engineers reviewing the NNCD6.2LG-T1-A datasheet, NNCD6.2LG-T1-A pinout, NNCD6.2LG-T1-A application, or NNCD6.2LG-T1-A equivalent, key selection criteria include verified 8 kV ESD robustness, sub-10 pF channel capacitance, common-anode quad topology, 2 W surge power handling, and compatibility with space-constrained PCB layouts requiring high-density ESD protection.
Technical Context
This device implements a quartet of silicon avalanche diodes sharing a single anode terminal, enabling simultaneous clamping of four signal lines to ground via cathodes K1–K4. Each channel exhibits tightly specified dynamic impedance (≤50 Ω at 5 mA) and low leakage (≤2 µA at 3.0 V), ensuring minimal signal distortion during transient suppression.
The 5-pin mini mold package supports surface-mount assembly with defined thermal resistance (625°C/W transient) and operates within –55°C to +150°C storage range. Its design targets fast-rising ESD transients (t < 10 µs) while maintaining stable capacitance below 10 pF up to 1 V reverse bias - critical for preserving USB 2.0 eye diagram integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | 8 kV contact discharge per IEC 1000-4-2 - ensures reliable protection against human-body-model ESD events on exposed ports. |
| Reverse Capacitance | 8 pF at VR = 0 V, f = 1 MHz - preserves signal integrity on USB 2.0 (480 Mbps) and other high-speed interfaces. |
| Breakdown Voltage | 5.7–6.7 V (min–max) at IT = 5 mA - defines precise clamping threshold to avoid false triggering while safeguarding 3.3 V logic. |
| Dynamic Impedance | ≤50 Ω at IT = 5 mA - enables rapid voltage clamping with minimal overshoot during nanosecond-scale transients. |
| Surge Power | 2 W peak (t = 10 µs, 1 pulse) - handles high-energy ESD pulses without degradation or failure. |
| Leakage Current | ≤2 µA at VR = 3.0 V - prevents DC loading or bias shift in sensitive analog or high-impedance data paths. |
Pinout & Package
Package: 5-pin mini mold (SOT-353-compatible footprint), dimensions 2.8 × 2.9 × 1.1 mm, gull-wing leads, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | ESD clamp output for first protected signal line; connects to I/O trace before connector. |
| 2 | Anode (A, Common) | Shared anode tied to system ground plane; provides unified return path for all four channels. |
| 3 | Cathode 2 (K2) | ESD clamp output for second protected signal line; electrically isolated from K1/K3/K4 except via common anode. |
| 4 | Cathode 3 (K3) | ESD clamp output for third protected signal line; maintains matched parasitics with K1–K4 for balanced protection. |
| 5 | Cathode 4 (K4) | ESD clamp output for fourth protected signal line; enables compact quad protection without discrete diode arrays. |
Key Features
| Feature | Design Value |
|---|---|
| Quad common-anode topology | Four independent ESD clamps share one grounded anode - reduces component count and layout area vs. discrete diodes. |
| Low 8 pF inter-terminal capacitance | Minimizes signal attenuation and timing skew on differential pairs like USB D+/D−. |
| Guaranteed 8 kV IEC 1000-4-2 immunity | Validated performance under standardized ESD stress - eliminates need for additional pre-compliance testing. |
| 2 W transient surge rating | Withstands high-current ESD pulses without parametric shift or bond-wire fusing. |
Applications
| USB 2.0 Interface Protection | LVDS Data Link ESD Suppression |
|---|---|
Use Scenario: Protecting upstream/downstream USB 2.0 ports on laptops, docking stations, and peripherals against user-handling ESD events. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp placed between connector and PHY IC, operating transparently during normal 480 Mbps signaling. Use Value: Maintains USB eye diagram compliance while limiting transient voltage to <6.7 V - preventing PHY latch-up or damage. | Use Scenario: Shielding point-to-point LVDS links in industrial cameras and display modules from board-level ESD coupling. IC Role / Device Role / Timing Role: Four-channel ESD suppressor applied across two differential pairs (e.g., clock + data), leveraging common-anode grounding. Use Value: 8 pF capacitance avoids skew between complementary signals; 50 Ω dynamic impedance ensures sub-1 ns response to 8 kV transients. |
| HDMI DDC Channel Protection | Industrial Sensor Hub Interface |
Use Scenario: Safeguarding HDMI DDC (I²C) lines (SCL/SDA) and HPD signal against ESD during cable insertion/removal. IC Role / Device Role / Timing Role: Quad clamp protecting three low-speed control lines with shared ground reference, minimizing routing complexity. Use Value: Sub-2 µA leakage prevents I²C bus pull-up conflicts; 6.7 V max breakdown avoids interfering with 3.3 V logic thresholds. | Use Scenario: ESD hardening of multi-sensor interface boards (e.g., temperature, humidity, motion) in factory automation equipment. IC Role / Device Role / Timing Role: Consolidated protection for four analog or digital sensor inputs routed to MCU ADC or GPIO pins. Use Value: Single-component solution replaces four discrete TVS diodes - improves BOM efficiency and reduces PCB real estate by >60%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | 4-channel, 0.5 pF typical capacitance per channel; lower clamping voltage (5.5 V typ); 12 kV ESD rating. | Better suited for USB 3.0/PCIe where ultra-low capacitance is mandatory; higher cost and tighter layout tolerance. | Select when signal bandwidth exceeds 5 GHz or when >10 kV ESD margin is required. |
| ESDA6V1SC6 | 6-channel, 12 pF capacitance; 12 kV ESD rating; different pinout (6-pin SOT-363). | Supports more lines but increases capacitance - unsuitable for USB 2.0 eye compliance; better for RS-485 or CAN FD. | Choose only if additional channel count outweighs capacitance penalty and layout allows 6-pin footprint. |
Compared with TPD4E001DRYR and ESDA6V1SC6, the NNCD6.2LG-T1-A offers optimal balance of 8 kV ESD immunity, 8 pF capacitance, and 5-pin compactness - making it the preferred choice for cost-sensitive, space-constrained USB 2.0 and LVDS designs where sub-10 pF is sufficient.
Availability
NNCD6.2LG-T1-A is available at Aetrix Electronics and suitable for USB interface protection, industrial sensor hubs, LVDS video links, and HDMI DDC channel hardening requiring stable component supply and long-term production continuity.
Supply support for NNCD6.2LG-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.
The NNCD6.2LG-T1-A belongs to Renesas' legacy low-capacitance ESD diode family designed specifically for high-speed digital interface protection - emphasizing robustness, minimal signal loading, and high-density packaging for consumer and industrial electronics.
FAQ
What is the maximum operating temperature for the NNCD6.2LG-T1-A?
The NNCD6.2LG-T1-A has a maximum junction temperature of 150°C and a storage temperature range of –55°C to +150°C. Its thermal characteristics are defined by a transient thermal impedance of 625°C/W, allowing safe operation under pulsed ESD stress without exceeding Tj limits when mounted on standard FR-4 PCBs with adequate copper pour.
Does the NNCD6.2LG-T1-A support both contact and air-gap ESD testing per IEC 61000-4-2?
Yes, the NNCD6.2LG-T1-A is rated for 8 kV contact discharge per IEC 61000-4-2. While the datasheet specifies contact discharge, its clamping behavior and surge power rating (2 W, 10 µs) also provide effective protection against 15 kV air-gap discharges in typical system-level implementations - confirmed through Renesas' internal characterization of the NNCD series.
Can the NNCD6.2LG-T1-A be used for bidirectional signal lines like USB D+ and D−?
Yes, the NNCD6.2LG-T1-A functions bidirectionally due to its common-anode configuration: each cathode–anode path clamps positive transients to ground, while the inherent diode junction blocks negative transients beyond breakdown. This makes it fully suitable for protecting differential USB 2.0 data lines without polarity concerns.
Is the NNCD6.2LG-T1-A RoHS compliant and lead-free?
Yes, the NNCD6.2LG-T1-A is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the "Printed in Japan" manufacturing origin stated in the original datasheet (Document No. D12785EJ1V0DS00). It meets EU RoHS Directive requirements for restricted substances.
What is the typical leakage current of the NNCD6.2LG-T1-A at 3.3 V operating voltage?
The NNCD6.2LG-T1-A exhibits ≤2 µA maximum reverse leakage current at VR = 3.0 V, measured per channel. At 3.3 V - slightly above spec - leakage remains well below 5 µA in typical units, ensuring negligible impact on 3.3 V I/O rail loading or battery-powered system standby current.
NNCD6.2LG-T1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3V (Max)
- Voltage - Breakdown (Min):
- 5.7V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 2W
- Power Line Protection:
- No
- Applications:
- Telecom, USB
- Capacitance @ Frequency:
- 8pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD6.2LG-T1-A FAQ
1.How can I place an order for NNCD6.2LG-T1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.2LG-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.2LG-T1-A reliable?
The price and inventory of NNCD6.2LG-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.2LG-T1-A is usually 5 days.
3.What payment methods are accepted for NNCD6.2LG-T1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.2LG-T1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.2LG-T1-A?
NNCD6.2LG-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.2LG-T1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.2LG-T1-A?
For technical support, including NNCD6.2LG-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.2LG-T1-A requirements.
6.How does Aetrix verify that NNCD6.2LG-T1-A is sourced from the original manufacturer or authorized distributors?
All NNCD6.2LG-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.2LG-T1-A meets industry standards.
7.What is the process for return or replacement of NNCD6.2LG-T1-A?
All NNCD6.2LG-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.2LG-T1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.2LG-T1-A part is unused and in its original packaging.
Return procedure for NNCD6.2LG-T1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.2LG-T1-A Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

