Renesas NNCD6.8C(0)-T1-AT

Overview

NNCD6.8C(0)-T1-AT from Renesas Electronics is a 150 mW electrostatic discharge (ESD) noise clipping diode with a breakdown voltage range of 6.44 V to 7.17 V, dynamic impedance ≤30 Ω at 5 mA, and ESD endurance ≥30 kV per IEC 1000-4-2. It operates in a 2-pin Ultra Super Mini Mold package and is used for external interface circuit protection in consumer electronics and industrial peripherals.

For engineers reviewing the NNCD6.8C(0)-T1-AT datasheet, NNCD6.8C(0)-T1-AT pinout, NNCD6.8C(0)-T1-AT application, or NNCD6.8C(0)-T1-AT equivalent, key selection criteria include clamping voltage performance, low dynamic impedance under ESD pulse conditions, junction temperature rating up to 150 °C, and compatibility with high-speed signal lines requiring <110 pF capacitance.

Technical Context

This device functions as a bidirectional transient voltage suppressor optimized for IEC 61000-4-2 Level 4 ESD immunity (±30 kV contact). Its low clamping voltage (≤3.5 V at 5 A surge) and fast response time enable effective protection of sensitive CMOS inputs without signal distortion.

The diode exhibits a typical junction capacitance of 110 pF at 0 V and maintains stable reverse leakage (<2 µA at 3.5 V) across its operating temperature range. Its thermal resistance profile supports continuous operation at ambient temperatures up to +125 °C when mounted on standard PCB substrates.

Key Specifications

Pinout & Package

Package: 2-pin Ultra Super Mini Mold (USM), dimensions 2.1 × 1.3 × 0.75 mm, cathode marked.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD2E001DRYR and SMAJ6.8A, the NNCD6.8C(0)-T1-AT delivers optimal balance of low-cost, ultra-small size, and proven 30 kV ESD performance for mid-speed signal lines-making it ideal for cost-sensitive consumer and industrial interfaces where <110 pF capacitance is acceptable.

Availability

NNCD6.8C(0)-T1-AT is available at Aetrix Electronics and suitable for USB 2.0 port protection, audio jack ESD suppression, and industrial serial interface safeguarding requiring stable component supply and long-term production continuity.

Supply support for NNCD6.8C(0)-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The NNCD series was developed specifically for IEC 61000-4-2 compliant ESD protection of external interface circuits in standard-grade consumer and industrial equipment, emphasizing compactness, reliability, and ease of integration.

FAQ

What is the maximum ESD voltage rating for NNCD6.8C(0)-T1-AT?

The NNCD6.8C(0)-T1-AT is rated for ≥30 kV contact discharge per IEC 1000-4-2 (now IEC 61000-4-2), verified under standardized test conditions with 150 pF capacitor and 330 Ω series resistor. This rating applies across its full operating temperature range and confirms suitability for industrial and consumer interface protection where Level 4 immunity is required. The NNCD6.8C(0)-T1-AT achieves this via low dynamic impedance and controlled avalanche behavior.

Does NNCD6.8C(0)-T1-AT support bidirectional ESD protection?

Yes, the NNCD6.8C(0)-T1-AT is a symmetric, bidirectional ESD protection diode. Its structure allows clamping of both positive and negative transients on the same signal line without polarity constraints. This makes the NNCD6.8C(0)-T1-AT especially suitable for AC-coupled interfaces like USB D+/D−, audio jacks, and differential data channels where signal swing crosses ground reference.

What is the junction capacitance of NNCD6.8C(0)-T1-AT at 1 MHz?

The NNCD6.8C(0)-T1-AT has a typical junction capacitance of 110 pF measured at 0 V bias and 1 MHz. This value is confirmed in the official Renesas datasheet (Document No. D11771EJ2V0DS00) and remains stable across process variation. For high-speed signal integrity, this capacitance is appropriate for interfaces up to ~480 Mbps (e.g., USB 2.0), but not recommended for USB 3.0 or PCIe Gen1+ without signal margin analysis. The NNCD6.8C(0)-T1-AT datasheet specifies this parameter under defined test conditions.

Can NNCD6.8C(0)-T1-AT be used in automotive applications?

No, the NNCD6.8C(0)-T1-AT is classified as a Standard quality grade device per Renesas documentation and is intended for computers, office equipment, audio/video gear, and industrial robots-not automotive systems. It lacks AEC-Q200 qualification, extended temperature validation beyond –55 °C to +150 °C, or automotive-specific reliability testing. For automotive infotainment or body control modules, a qualified alternative such as the NUP4105MR6T1G must be selected instead of the NNCD6.8C(0)-T1-AT.

What is the power dissipation limit of NNCD6.8C(0)-T1-AT at 85 °C ambient?

At 85 °C ambient temperature, the NNCD6.8C(0)-T1-AT's maximum allowable power dissipation is approximately 90 mW, derived from its 150 mW rating at 25 °C and thermal derating slope of 1.2 mW/°C above 25 °C (per Fig. 1 in the datasheet). This derating ensures safe junction temperature operation below 150 °C. Designers must verify PCB copper area and airflow to maintain this limit during sustained surge events. The NNCD6.8C(0)-T1-AT thermal performance is validated using ceramic substrate test boards.