Renesas NNCD6.8C-T1-A

Overview

NNCD6.8C-T1-A from Renesas Electronics is an electrostatic discharge (ESD) noise clipping diode in a 2-pin Ultra Super Mini Mold package, rated for 150 mW power dissipation, with a breakdown voltage range of 6.44 V to 7.17 V at 5 mA, dynamic impedance ≤30 Ω, and ESD endurance ≥30 kV per IEC 1000-4-2. It serves as a transient voltage suppressor on external interface lines such as parallel printer or CD-ROM connections.

For engineers reviewing the NNCD6.8C-T1-A datasheet, NNCD6.8C-T1-A pinout, NNCD6.8C-T1-A application, or NNCD6.8C-T1-A equivalent, key selection criteria include its 3.5 V clamping voltage at 1 A, 110 pF capacitance at 1 MHz, 85 W surge reverse power rating (10 µs pulse), junction temperature limit of 150 °C, and suitability for non-life-critical industrial and consumer interface protection.

Technical Context

This device operates as a bidirectional silicon avalanche diode optimized for fast-response ESD suppression. Its low dynamic impedance (≤30 Ω) ensures effective voltage clamping during sub-nanosecond ESD transients, while its 110 pF capacitance minimizes signal distortion on low-speed digital interfaces.

The diode is designed for surface-mount placement on PCBs with ceramic or glass-epoxy substrates and requires no biasing-functioning passively across the protected line and ground. It complies with IEC 1000-4-2 Level 4 (±30 kV contact discharge) without external circuitry.

Key Specifications

Pinout & Package

Package: 2-pin Ultra Super Mini Mold (USM), dimensions 2.1 × 1.3 × 0.75 mm, cathode marked.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with NSVL6.8A and SMAJ6.8A, the NNCD6.8C-T1-A delivers optimal balance of ultra-small size, low capacitance, and IEC-certified 30 kV performance-making it ideal for legacy parallel and low-speed peripheral interfaces where PCB real estate and signal fidelity are critical.

Availability

NNCD6.8C-T1-A is available at Aetrix Electronics and suitable for parallel printer interface protection, CD-ROM drive bus shielding, and industrial front-panel button line ESD hardening requiring stable component supply and long-term obsolescence management.

Supply support for NNCD6.8C-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The NNCD series was developed by Renesas (formerly NEC) specifically for cost-sensitive, space-constrained ESD protection in standard-grade consumer and industrial equipment-emphasizing reliability under IEC 1000-4-2 testing without requiring active control or external components.

FAQ

What is the maximum clamping voltage of the NNCD6.8C-T1-A during a 30 kV ESD event?

The NNCD6.8C-T1-A exhibits a maximum clamping voltage of 3.5 V at 1 A test current, measured per IEC 1000-4-2 conditions. This value represents the peak voltage imposed on the protected line during a standardized 30 kV contact discharge event. The NNCD6.8C-T1-A achieves this low clamping level due to its ≤30 Ω dynamic impedance, ensuring downstream ICs remain within safe operating limits. Actual clamping may vary slightly depending on PCB layout inductance and grounding quality.

Is the NNCD6.8C-T1-A unidirectional or bidirectional?

The NNCD6.8C-T1-A is a bidirectional ESD protection diode, capable of suppressing both positive and negative polarity transients equally. Its symmetrical avalanche structure allows it to be placed across any signal-to-ground path without regard to polarity. This makes the NNCD6.8C-T1-A especially suitable for AC-coupled or differential lines like parallel port handshaking signals. No orientation marking beyond the cathode band is needed for basic protection configurations.

Can the NNCD6.8C-T1-A be used in automotive applications?

The NNCD6.8C-T1-A is classified as a Standard-grade Renesas product, intended for computers, office equipment, and consumer electronics-not automotive or safety-critical systems. It lacks AEC-Q200 qualification and has no specified operation above 105 °C ambient. For automotive infotainment or body control modules, qualified alternatives like the ON Semiconductor NUP4105MR6T1G should be selected instead of the NNCD6.8C-T1-A.

What is the thermal resistance and maximum junction temperature of the NNCD6.8C-T1-A?

The NNCD6.8C-T1-A has a maximum junction temperature (Tj) of 150 °C and a transient thermal impedance of 833 °C/W (per Fig. 5). Its steady-state thermal performance is governed by PCB copper area and material-typical USM packages achieve ~200–300 °C/W with 10 × 7.5 mm ceramic substrate. Derating begins above 25 °C ambient, reaching zero power dissipation at 150 °C. The NNCD6.8C-T1-A must be mounted on thermally adequate land patterns to avoid exceeding Tj during sustained leakage or repeated ESD events.

Does the NNCD6.8C-T1-A require external biasing or control circuitry?

No, the NNCD6.8C-T1-A is a passive, two-terminal device requiring no external bias, power supply, or control signals. It functions solely as a voltage-clamping element triggered automatically when transient voltage exceeds its breakdown threshold. This self-contained operation simplifies design integration-only two PCB traces (signal and ground) are needed. The NNCD6.8C-T1-A remains fully transparent during normal DC and low-frequency operation, drawing ≤2 µA reverse leakage at 3.5 V.