Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas NNCD6.8F-T1B-AT

Part No.:
NNCD6.8F-T1B-AT
Manufacturer:
Renesas
Category:
TVS Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixNNCD6.8F-T1B-AT.pdf
Description:
NNCD6.8F-T1B-AT - ELECTROSTATIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:16,099

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NNCD6.8F-T1B-AT from Renesas Electronics is a dual-channel ESD noise clipping diode in SC-59 (EIAJ) 3-pin mini mold package, with breakdown voltage 6.47–7.14 V, dynamic impedance ≤30 Ω at 5 mA, reverse leakage ≤2 µA at 3.5 V, capacitance 110 pF at 1 MHz, and ESD endurance ≥30 kV per IEC 1000-4-2. It protects external interface circuits such as parallel printer ports and CD-ROM connectors.

For engineers reviewing the NNCD6.8F-T1B-AT datasheet, NNCD6.8F-T1B-AT pinout, NNCD6.8F-T1B-AT application, or NNCD6.8F-T1B-AT equivalent, key selection criteria include clamping voltage stability under 30 kV ESD pulses, low dynamic impedance for fast transient suppression, and dual-cathode common-anode topology for bidirectional signal line protection.

Technical Context

This device implements a double-type, anode-common ESD protection structure with two independent Zener-like clamping paths (A–K1 and A–K2), each rated for 200 mW total power dissipation and 100 W non-repetitive surge power at 10 µs pulse width. Its low 110 pF junction capacitance enables use on high-speed digital interfaces without signal integrity degradation.

The diode operates within –55 °C to +150 °C storage range and supports junction temperatures up to 150 °C. Its IEC 1000-4-2 compliance ensures validated 30 kV contact discharge immunity - critical for consumer electronics and peripheral interfaces exposed to human handling.

Key Specifications

ParameterValue and Actual Design Meaning
Breakdown Voltage6.47–7.14 V at 5 mA - defines precise clamping threshold for overvoltage transients on protected lines.
Dynamic Impedance≤30 Ω at 5 mA - ensures low-voltage overshoot during fast ESD events (e.g., IEC 1000-4-2).
Junction Capacitance110 pF at 1 MHz, VR = 0 V - minimizes loading on high-speed data lines like parallel printer or CD-ROM interfaces.
ESD Withstand≥30 kV per IEC 1000-4-2 - validated immunity to human-body-model electrostatic discharges.
Power Dissipation200 mW (total) - sets thermal limit for continuous operation in ambient temperatures up to 100 °C.
Surge Power Rating100 W at tT = 10 µs - supports single-pulse energy absorption without failure.

Pinout & Package

Package: SC-59 (EIAJ) 3-pin mini mold, surface-mount, anode-common dual-diode configuration.

Pin/TerminalCircuit RoleDesign Meaning
1Cathode 1 (K1)First clamping path cathode - connects to one protected signal line (e.g., DATA0).
2Cathode 2 (K2)Second clamping path cathode - connects to second protected signal line (e.g., STROBE).
3Anode (A)Common anode node - tied to ground or low-impedance return path for bidirectional clamping.

Key Features

FeatureDesign Value
Dual-channel ESD protectionSingle SC-59 package integrates two independent clamping diodes sharing one anode - reduces PCB area vs. discrete solutions.
IEC 1000-4-2 certifiedValidated 30 kV contact discharge endurance - meets industrial and consumer EMI immunity requirements out-of-box.
Low dynamic impedance≤30 Ω at 5 mA - limits voltage overshoot during nanosecond-scale ESD transients, protecting downstream IC inputs.
Stable capacitance110 pF at 1 MHz - predictable high-frequency loading enables reliable timing margin analysis on parallel bus interfaces.

Applications

Parallel Printer Interface ProtectionCD-ROM Data Bus Clamping

Use Scenario: Protects bidirectional 8-bit parallel data lines (DATA0–DATA7) and control signals (STROBE, ACK) between PC and dot-matrix/inkjet printers exposed to handling ESD.

IC Role / Device Role / Timing Role: Anode-common dual diode clamps both positive and negative transients on each signal line to ground.

Use Value: Prevents latch-up or input-stage damage in printer controller ICs by limiting transient voltage to ≤7.14 V with sub-30 Ω dynamic resistance.

Use Scenario: Shields ATAPI/IDE data bus lines (D0–D15) and control pins (IORDY, RESET) of internal CD-ROM drives during system assembly or maintenance.

IC Role / Device Role / Timing Role: Provides low-capacitance (<110 pF), bidirectional clamping without degrading 16-bit burst transfer timing.

Use Value: Maintains signal edge integrity while absorbing >30 kV ESD pulses - avoids data corruption or drive firmware lockup.

External Peripheral Connector GuardLegacy Audio/Video I/O Surge Absorption

Use Scenario: Mounted adjacent to D-sub or DB-25 connectors on industrial PCs or test equipment front panels subject to frequent cable insertion/removal.

IC Role / Device Role / Timing Role: Dual-cathode layout allows protection of two independent signal pairs (e.g., TX/RX and RTS/CTS) with shared ground reference.

Use Value: Eliminates need for separate TVS devices per line - cuts BOM count and routing complexity for multi-signal connectors.

Use Scenario: Clamps transient spikes on analog audio line inputs (L/R channels) and composite video outputs in set-top boxes or AV receivers.

IC Role / Device Role / Timing Role: Functions as waveform clipper - suppresses overvoltage excursions beyond ±7.14 V without distorting baseband audio/video spectra.

Use Value: Prevents audible pop/crackle and video sync loss caused by induced surges on unshielded RCA or phono cables.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NSQA6V8A3T2GSingle-channel, 6.8 V clamping, SOT-23 package, 105 pF capacitance, 30 kV HBM rating.Requires two devices for dual-line protection; lacks integrated common-anode topology.Select when board space permits discrete placement and ground routing flexibility is available.
Vishay SMAJ6.8ASingle-directional TVS, 6.8 V standoff, DO-214AC package, 1500 W peak pulse power, 200 pF capacitance.Unidirectional clamping only; higher capacitance limits use on >10 MHz signals.Prefer for high-energy surge environments where ESD is secondary to lightning-induced transients.

Compared with NSQA6V8A3T2G and SMAJ6.8A, the NNCD6.8F-T1B-AT delivers integrated dual-line protection in one SC-59 footprint with lower capacitance and guaranteed IEC 1000-4-2 30 kV performance - optimizing layout efficiency and interface signal fidelity for legacy parallel and ATA buses.

Availability

NNCD6.8F-T1B-AT is available at Aetrix Electronics and suitable for parallel printer interfaces, CD-ROM data buses, external peripheral connector protection, and legacy audio/video I/O requiring stable component supply across long-lifecycle industrial and consumer designs.

Supply support for NNCD6.8F-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and interface solutions.

The NNCD6.8F-T1B-AT belongs to Renesas' ESD noise clipping diode family designed specifically for IEC 1000-4-2-compliant protection of external digital interfaces in standard-grade consumer and office equipment.

FAQ

What is the maximum operating junction temperature for NNCD6.8F-T1B-AT?

The NNCD6.8F-T1B-AT has a maximum junction temperature (Tj) rating of 150 °C, as specified in its absolute maximum ratings table. This allows reliable operation in high-ambient environments such as enclosed industrial enclosures or near heat-generating components. Derating curves in the datasheet confirm 200 mW total power dissipation is sustainable up to 100 °C ambient - ensuring thermal safety margins for NNCD6.8F-T1B-AT in typical PCB layouts with moderate copper pour.

Does NNCD6.8F-T1B-AT support bidirectional ESD protection?

Yes, the NNCD6.8F-T1B-AT provides bidirectional clamping via its anode-common dual-diode structure: cathodes K1 and K2 clamp positive transients to ground, while the forward conduction of each A–K path clamps negative transients. This architecture enables full protection of AC-coupled or bidirectional digital lines - a core design feature confirmed in the "PIN CONNECTION" and "APPLICATIONS" sections of the NNCD6.8F-T1B-AT datasheet.

What is the typical junction capacitance of NNCD6.8F-T1B-AT and why does it matter?

The NNCD6.8F-T1B-AT exhibits 110 pF typical junction capacitance at 1 MHz and 0 V bias. This low value minimizes capacitive loading on high-speed parallel interfaces (e.g., printer handshaking or CD-ROM data bursts), preserving signal rise/fall times and preventing timing violations. The datasheet explicitly lists this parameter in the "ELECTRICAL CHARACTERISTICS" table - confirming its relevance for NNCD6.8F-T1B-AT in bandwidth-sensitive applications.

Is NNCD6.8F-T1B-AT compliant with IEC 1000-4-2, and what does that mean for system design?

Yes, the NNCD6.8F-T1B-AT is rated for ≥30 kV contact discharge per IEC 1000-4-2 - a key electromagnetic compatibility requirement for end-user accessible ports. This certification means NNCD6.8F-T1B-AT can be deployed without additional external protection circuitry on interfaces like printer or CD-ROM connectors, simplifying design validation and reducing time-to-certification for CE/FCC-marked products.

Can NNCD6.8F-T1B-AT replace older NEC ESD diodes like NNCD6.8F without layout changes?

Yes, NNCD6.8F-T1B-AT uses the same SC-59 (EIAJ) 3-pin mini mold package and identical pinout (K1–K2–A) as the original NNCD6.8F, with identical electrical specifications including breakdown voltage, dynamic impedance, and capacitance. Renesas' documentation confirms backward compatibility - making NNCD6.8F-T1B-AT a direct drop-in replacement for NNCD6.8F in existing designs requiring no PCB or firmware modifications.

NNCD6.8F-T1B-AT Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Package/Case:
TO-236-3, SC-59, SOT-23-3
Series:
-
Packaging:
Bulk
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
2
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.5V (Max)
Voltage - Breakdown (Min):
6.47V
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
100W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
110pF @ 1MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59

NNCD6.8F-T1B-AT FAQ

1.How can I place an order for NNCD6.8F-T1B-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for NNCD6.8F-T1B-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NNCD6.8F-T1B-AT reliable?

The price and inventory of NNCD6.8F-T1B-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8F-T1B-AT is usually 5 days.

3.What payment methods are accepted for NNCD6.8F-T1B-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8F-T1B-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NNCD6.8F-T1B-AT?

NNCD6.8F-T1B-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NNCD6.8F-T1B-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NNCD6.8F-T1B-AT?

For technical support, including NNCD6.8F-T1B-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8F-T1B-AT requirements.

6.How does Aetrix verify that NNCD6.8F-T1B-AT is sourced from the original manufacturer or authorized distributors?

All NNCD6.8F-T1B-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8F-T1B-AT meets industry standards.

7.What is the process for return or replacement of NNCD6.8F-T1B-AT?

All NNCD6.8F-T1B-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8F-T1B-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NNCD6.8F-T1B-AT part is unused and in its original packaging.

Return procedure for NNCD6.8F-T1B-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NNCD6.8F-T1B-AT Tags

  • NNCD6.8F-T1B-AT
  • NNCD6.8F-T1B-AT PDF
  • NNCD6.8F-T1B-AT Datasheet
  • NNCD6.8F-T1B-AT Specifications
  • NNCD6.8F-T1B-AT Images
  • Renesas
  • Renesas NNCD6.8F-T1B-AT
  • Buy NNCD6.8F-T1B-AT
  • NNCD6.8F-T1B-AT Price
  • NNCD6.8F-T1B-AT Distributor
  • NNCD6.8F-T1B-AT Supplier
  • NNCD6.8F-T1B-AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER