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Renesas NNCD6.8G-T1-AT
- Part No.:
- NNCD6.8G-T1-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- SC-74A, SOT-753
- Datasheet:
-
NNCD6.8G-T1-AT.pdf
- Description:
- NNCD6.8G-T1-AT - ELECTROSTATIC D
- Quantity:
- Payment:
- Shipping:
Inventory:3,601
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Product details
Overview
NNCD6.8G-T1-AT from Renesas Electronics is a quad-channel electrostatic discharge (ESD) noise clipping diode in a 5-pin Mini Mold (SC-74A) package with common anode configuration, featuring a breakdown voltage of 6.47–7.14 V, dynamic impedance ≤30 Ω at 5 mA, reverse leakage ≤2 µA at 3.5 V, capacitance of 110 pF at 1 MHz, and ESD endurance ≥30 kV per IEC 1000-4-2. It protects external interface circuits such as parallel ports and CD-ROM connectors.
For engineers reviewing the NNCD6.8G-T1-AT datasheet, NNCD6.8G-T1-AT pinout, NNCD6.8G-T1-AT application, or NNCD6.8G-T1-AT equivalent, key selection criteria include common-anode quad-diode topology, 30 kV IEC 1000-4-2 compliance, 110 pF signal-line capacitance, 30 Ω dynamic impedance, and SC-74A surface-mount packaging for high-density PCB layouts.
Technical Context
This device implements four identical silicon PN-junction clipping diodes sharing a single anode terminal, optimized for fast transient suppression on data lines. Its low dynamic impedance (≤30 Ω) ensures clamping within nanoseconds during ESD events, while its 110 pF capacitance at 1 MHz balances signal integrity and protection for low-to-moderate-speed interfaces.
The quad-common-anode architecture enables compact protection of four independent signal lines-such as printer parallel bus lines-with one component. Thermal design is supported by a 150 °C maximum junction temperature and transient thermal impedance curves validated up to 100 ms pulse width.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 6.47–7.14 V at 5 mA - defines clamping threshold for ESD transients on protected lines |
| Dynamic Impedance (ZZ) | ≤30 Ω at 5 mA - ensures low-voltage overshoot during 30 kV ESD strikes |
| Reverse Leakage (IR) | ≤2 µA at 3.5 V - minimizes standby power loss and signal loading |
| Capacitance (CT) | 110 pF at 1 MHz - compatible with parallel port, game controller, and legacy peripheral signaling |
| ESD Withstand (IEC 1000-4-2) | ≥30 kV contact discharge - meets industrial-grade interface immunity requirements |
| Package | 5-pin Mini Mold (SC-74A) - surface-mount, 2.9 × 1.9 mm footprint for automated assembly |
| Power Dissipation (PD) | 200 mW total - supports continuous operation in ambient temperatures up to 125 °C |
Pinout & Package
Delivered in a 5-pin Mini Mold (SC-74A) package measuring 2.9 ± 0.2 mm × 1.9 mm × 1.4 mm, with gull-wing leads and 0.65 mm pitch. The package supports reflow soldering and is rated for storage from –55 °C to +150 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | Clips positive transients on Signal Line 1; connects to protected I/O trace |
| 2 | Anode (A) | Common return path for all four diodes; ties to system ground or low-impedance reference |
| 3 | Cathode 2 (K2) | Clips positive transients on Signal Line 2; electrically isolated from K1/K3/K4 |
| 4 | Cathode 3 (K3) | Clips positive transients on Signal Line 3; shares no internal connection with other cathodes |
| 5 | Cathode 4 (K4) | Clips positive transients on Signal Line 4; enables four-line protection without discrete components |
Key Features
| Feature | Design Value |
|---|---|
| Quad common-anode diode array | Integrates four independent ESD clamps in one SC-74A package, reducing board area vs. four discrete diodes |
| 30 kV IEC 1000-4-2 compliance | Validated for contact discharge per international EMC immunity standard, eliminating need for external test validation |
| 110 pF capacitance at 1 MHz | Preserves signal rise/fall times on parallel bus and peripheral control lines without distortion |
| Low 30 Ω dynamic impedance | Clamps 8/20 µs surge currents below 10 V peak, protecting downstream logic inputs |
| 150 °C max junction temperature | Supports operation in thermally constrained enclosures and near heat-generating ICs |
Applications
| Parallel Port Protection | CD-ROM Interface Clamp |
|---|---|
Use Scenario: Protects bidirectional data lines (D0–D7), status lines (BUSY, ACK), and control lines (STROBE, AUTOFEED) on PC parallel ports against ESD from cable handling or hot-plug events. IC Role / Device Role / Timing Role: Quad-clamp diode array providing simultaneous low-impedance shunt paths to ground for up to four signal lines during ESD transients. Use Value: Prevents latch-up or permanent damage to parallel port transceivers while maintaining <110 pF loading per line for full-speed IEEE 1284 compliance. | Use Scenario: Shields CD-ROM drive interface signals-including MOTOR ON, SPIN UP, and DATA READY-from ESD induced by user-accessible front-panel buttons or tray ejection mechanisms. IC Role / Device Role / Timing Role: Common-anode transient voltage suppressor placed between connector pins and host controller GPIOs. Use Value: Enables robust consumer-grade optical drive integration without requiring additional TVS arrays or layout spacing for spark gaps. |
| Game Controller Input Protection | Industrial Printer Cable Interface |
Use Scenario: Secures directional pad, button, and trigger inputs on legacy console game controllers connected via DB-9 or DIN-8 cables subject to repeated handling and static buildup. IC Role / Device Role / Timing Role: Four-channel ESD clamp isolating each input from shared ground return during fast-rising human-body-model discharges. Use Value: Eliminates false keypresses and microcontroller resets caused by sub-100 ns ESD pulses, verified to 30 kV contact discharge. | Use Scenario: Installed at the ribbon-cable entry point of industrial dot-matrix or thermal printers to protect stepper motor control, paper-feed, and print-head enable lines. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor bridging each signal to chassis ground before entering main logic board. Use Value: Maintains timing margins on 1–5 kHz step pulses while surviving >100,000 ESD events in factory-floor environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4105MR6T1G | Quad common-cathode configuration; 120 pF capacitance; 30 kV HBM rating (not IEC 1000-4-2 validated) | Requires inverted PCB layout (cathode tie to VCC, not ground); better suited for supply-rail clamping than signal-line clipping | Select when protecting 3.3 V logic rails with positive-going transients; verify layout compatibility with common-cathode topology |
| Vishay VTVS5V0C1DP | Single-channel device; 5.0 V nominal breakdown; 100 pF; 30 kV IEC 1000-4-2 certified | Requires four separate placements for equivalent coverage; higher assembly cost and board area usage | Choose only if existing design uses discrete placement or requires tighter 5.0 V clamping threshold |
Compared with NUP4105MR6T1G and VTVS5V0C1DP, the NNCD6.8G-T1-AT delivers verified 30 kV IEC 1000-4-2 performance in a space-saving quad common-anode format ideal for signal-line protection, whereas alternatives trade off layout simplicity, certification scope, or channel integration.
Availability
NNCD6.8G-T1-AT is available at Aetrix Electronics and suitable for parallel port protection, CD-ROM interface clamping, game controller input hardening, and industrial printer cable interface applications requiring stable component supply and long-term obsolescence management.
Supply support for NNCD6.8G-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and interface solutions for industrial, automotive, and consumer systems.
The NNCD series was developed by Renesas (formerly NEC) specifically for ESD noise clipping in external interface circuits, targeting cost-sensitive, high-volume applications like PC peripherals and consumer electronics where reliability under IEC 1000-4-2 testing is mandatory.
FAQ
What is the exact breakdown voltage range specified for NNCD6.8G-T1-AT?
The NNCD6.8G-T1-AT has a guaranteed breakdown voltage range of 6.47 V to 7.14 V, measured at 5 mA DC test current per diode element (A–K1, A–K2, A–K3, A–K4). This range reflects manufacturing tolerance and ensures consistent clamping behavior across production lots while meeting IEC 1000-4-2 transient suppression requirements. The "6.8" in the part number denotes the nominal breakdown voltage centerpoint.
Does NNCD6.8G-T1-AT support bidirectional ESD protection?
No, the NNCD6.8G-T1-AT provides unidirectional (positive-going) ESD clamping only, due to its common-anode configuration. Each cathode (K1–K4) conducts when its respective signal line rises above the anode potential (typically tied to ground). For bidirectional protection, an external series resistor plus pull-up/pull-down network or complementary dual-diode array would be required. The NNCD6.8G-T1-AT datasheet confirms operation only under forward-bias transient conditions.
What is the maximum allowable junction temperature for NNCD6.8G-T1-AT?
The maximum junction temperature (Tj) for NNCD6.8G-T1-AT is 150 °C, as specified in the Absolute Maximum Ratings table. This limit applies under steady-state and transient power dissipation conditions. Derating begins at 25 °C ambient, with total power dissipation decreasing linearly to zero at 150 °C ambient per the P–TA curve in the datasheet. Operation beyond 150 °C risks permanent parametric shift or bond-wire failure.
Is NNCD6.8G-T1-AT compliant with RoHS and lead-free soldering standards?
Yes, NNCD6.8G-T1-AT complies with the EU RoHS Directive and is manufactured with lead-free terminations compatible with standard Pb-free reflow profiles (J-STD-020). Renesas confirms environmental compliance in its product change notices and material declarations. The device uses matte tin plating on gull-wing leads and meets JEDEC MSL Level 1 requirements for moisture sensitivity.
Can NNCD6.8G-T1-AT be used to protect USB 2.0 data lines?
No, NNCD6.8G-T1-AT is not recommended for USB 2.0 data line protection due to its 110 pF capacitance, which exceeds the 10 pF maximum typically allowed on D+ and D− differential pairs. Its 6.47–7.14 V breakdown voltage also mismatches the 3.3 V logic swing of USB transceivers. For USB 2.0, purpose-built low-capacitance ESD arrays such as the ON Semiconductor ESD9X5.0S or NXP PUSB3FR4 are appropriate alternatives.
NNCD6.8G-T1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- SC-74A, SOT-753
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V (Max)
- Voltage - Breakdown (Min):
- 6.47V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 85W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 110pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-Mini Mold
NNCD6.8G-T1-AT FAQ
1.How can I place an order for NNCD6.8G-T1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.8G-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.8G-T1-AT reliable?
The price and inventory of NNCD6.8G-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8G-T1-AT is usually 5 days.
3.What payment methods are accepted for NNCD6.8G-T1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8G-T1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.8G-T1-AT?
NNCD6.8G-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.8G-T1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.8G-T1-AT?
For technical support, including NNCD6.8G-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8G-T1-AT requirements.
6.How does Aetrix verify that NNCD6.8G-T1-AT is sourced from the original manufacturer or authorized distributors?
All NNCD6.8G-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8G-T1-AT meets industry standards.
7.What is the process for return or replacement of NNCD6.8G-T1-AT?
All NNCD6.8G-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8G-T1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.8G-T1-AT part is unused and in its original packaging.
Return procedure for NNCD6.8G-T1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.8G-T1-AT Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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