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Renesas NNCD6.8J-T1-A
- Part No.:
- NNCD6.8J-T1-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- SOD-723
- Datasheet:
-
NNCD6.8J-T1-A.pdf
- Description:
- TVS DIODE 6.8VWM 2-ULTRA
- Quantity:
- Payment:
- Shipping:
Inventory:89,996
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Product details
Overview
NNCD6.8J-T1-A from Renesas Electronics is an ESD noise clipping diode designed for electrostatic discharge protection in external interface circuits. It features a breakdown voltage of 6.2–7.1 V (at 5 mA), 90 pF capacitance at 1 MHz, ≤2 µA reverse leakage at 2 V, 30 kV contact ESD immunity per IEC 61000-4-2, and 150 mW power dissipation in a 2-pin ultra super mini mold flat package.
For engineers reviewing the NNCD6.8J-T1-A datasheet, NNCD6.8J-T1-A pinout, NNCD6.8J-T1-A application, or NNCD6.8J-T1-A equivalent, key selection criteria include its low clamping voltage, sub-100 pF signal-line capacitance, high surge power tolerance (85 W @ 10 µs), and suitability for high-density PCB layouts requiring robust I/O port protection.
Technical Context
This device operates as a unidirectional silicon junction diode optimized for transient voltage suppression. Its clamping action begins near 6.2 V with sharp turn-on characteristics, enabling fast response to ESD events while minimizing signal distortion on data lines.
The diode exhibits low dynamic capacitance (90 pF typical at 0 V, decreasing with reverse bias) and maintains stable leakage (<2 µA at VR = 2 V), making it suitable for high-speed interfaces such as USB 2.0, HDMI DDC, and industrial sensor I/O where signal integrity and low standby current are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 6.2–7.1 V at 5 mA - defines minimum clamping threshold for ESD protection |
| Capacitance | 90 pF at 1 MHz, VR = 0 V - ensures minimal loading on high-speed digital or analog signal lines |
| Reverse Leakage | ≤2 µA at VR = 2 V - preserves low-power operation in battery-powered interface circuits |
| ESD Withstand | 30 kV contact per IEC 61000-4-2 - meets industrial-grade interface immunity requirements |
| Surge Power | 85 W (10 µs pulse, single event) - handles high-energy transients without degradation |
| Power Dissipation | 150 mW at TA = 25°C - supports continuous operation in compact surface-mount layouts |
Pinout & Package
Package: 2-pin Ultra Super Mini Mold (Flat Type), dimensions 1.4 ± 0.1 × 1.0 ± 0.1 × 0.5 MAX mm, cathode marked with band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input/Signal Line Connection | Connected to protected I/O line; conducts during positive ESD transients |
| Cathode | GND Reference / Clamping Node | Connected to system ground; establishes clamping path for negative transients and defines breakdown polarity |
Key Features
| Feature | Design Value |
|---|---|
| IEC 61000-4-2 Compliance | 30 kV contact discharge rating - exceeds Level 4 immunity requirement for industrial equipment |
| Low Capacitance | 90 pF at 0 V - enables use on USB, I²C, and other <100 MHz signal paths without bandwidth loss |
| High-Density Packaging | 1.4 × 1.0 mm flat mold - supports automated placement and reduces PCB footprint vs. SOD-323 or SC-70 |
| Stable Leakage Performance | ≤2 µA at 2 V reverse bias - minimizes quiescent current impact in always-on sensor interfaces |
Applications
| USB 2.0 Port Protection | HDMI DDC Line Protection |
|---|---|
Use Scenario: Protecting USB data lines (D+, D−) against ESD events during hot-plug insertion in embedded host controllers. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between each data line and chassis ground. Use Value: 90 pF capacitance avoids signal rise-time degradation; 30 kV contact rating ensures compliance with USB-IF ESD test requirements. | Use Scenario: Safeguarding HDMI Display Data Channel (DDC) lines (SCL/SDA) from user-induced ESD in consumer AV receivers. IC Role / Device Role / Timing Role: Low-capacitance shunt diode connected from DDC lines to system ground. Use Value: Sub-100 pF loading preserves I²C timing margins; breakdown voltage aligns with 5 V DDC supply rail. |
| Industrial Sensor Interface | RS-485 Transceiver I/O |
Use Scenario: Shielding analog/digital sensor outputs (e.g., 4–20 mA loop or SPI lines) in factory-floor PLC modules. IC Role / Device Role / Timing Role: Point-of-entry ESD suppressor on sensor-side I/O traces before signal conditioning circuitry. Use Value: 150 mW power rating sustains repeated low-energy discharges; flat package allows routing under connectors. | Use Scenario: Adding secondary ESD protection on RS-485 bus A/B lines beyond transceiver's internal clamp. IC Role / Device Role / Timing Role: External bidirectional clamping pair (two NNCD6.8J-T1-A back-to-back) across differential bus lines. Use Value: 6.8 V nominal breakdown provides headroom above RS-485 common-mode range (±7 V); 85 W surge rating absorbs cable-coupled transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD9X5.0ST5G | 5.0 V breakdown, 30 pF, SOD-923 package (1.0 × 0.6 mm) | Lower clamping voltage suits 3.3 V logic; lower capacitance benefits >100 MHz interfaces | Select when protecting 3.3 V I/O with tighter capacitance budget; verify layout compatibility with smaller pad geometry |
| CM1213-04SO | Quad-channel array, 6.8 V breakdown, 12 pF per line, SOIC-14 | Integrated multi-line solution for dense port clusters; higher cost per channel but saves board space | Prefer for systems with ≥4 protected lines sharing ground; not suitable for single-line discrete placement |
Compared with ESD9X5.0ST5G and CM1213-04SO, the NNCD6.8J-T1-A offers a balanced trade-off of 6.8 V clamping, 90 pF capacitance, and ultra-compact 1.4 × 1.0 mm footprint-ideal for cost-sensitive, space-constrained single-line protection where 5 V logic margin is sufficient.
Availability
NNCD6.8J-T1-A is available at Aetrix Electronics and suitable for USB interface protection, HDMI DDC safeguarding, and industrial sensor I/O requiring stable component supply across long-lifecycle embedded programs.
Supply support for NNCD6.8J-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and interface solutions.
The NNCD6.8J-T1-A belongs to Renesas' legacy ESD noise clipping diode family, engineered specifically for IEC 61000-4-2-compliant interface protection in standard-grade industrial and consumer electronics.
FAQ
What is the maximum operating temperature for NNCD6.8J-T1-A?
The NNCD6.8J-T1-A has a maximum junction temperature of 150°C and a storage temperature range of −55°C to +150°C. Its power derating curve shows linear reduction from 150 mW at 25°C to zero at 150°C ambient, requiring thermal design consideration in enclosed or high-temperature environments where the NNCD6.8J-T1-A is deployed near heat sources.
Does NNCD6.8J-T1-A meet IEC 61000-4-2 Level 4 requirements?
Yes, the NNCD6.8J-T1-A is rated for 30 kV contact discharge per IEC 61000-4-2, exceeding Level 4 (8 kV contact / 15 kV air) by a wide margin. This performance is verified in the original Renesas datasheet D15985EJ3V1DS and applies directly to the NNCD6.8J-T1-A variant within the NNCD5.6J–NNCD36J series.
Can NNCD6.8J-T1-A be used for bidirectional ESD protection?
No-the NNCD6.8J-T1-A is a unidirectional diode. For bidirectional protection, two units must be connected in series opposition (anode-to-anode or cathode-to-cathode). The datasheet confirms this configuration is valid and commonly applied on differential buses like RS-485, where the NNCD6.8J-T1-A pair provides symmetrical clamping around ground.
What is the typical capacitance of NNCD6.8J-T1-A at 3.3 V reverse bias?
Per the "Ct–VR CHARACTERISTICS" graph in the NNCD5.6J–NNCD36J datasheet, the NNCD6.8J-T1-A exhibits approximately 40–50 pF capacitance at VR = 3.3 V and f = 1 MHz. This reduced value versus the 90 pF at 0 V improves high-frequency signal fidelity in 3.3 V interface applications.
Is NNCD6.8J-T1-A RoHS compliant?
Yes, the NNCD6.8J-T1-A complies with the EU RoHS Directive, as confirmed by Renesas' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and is suitable for use in consumer and industrial electronics sold in regulated markets.
NNCD6.8J-T1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- SOD-723
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.8V
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 85W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 90pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-Ultra Super Mini Mold
NNCD6.8J-T1-A FAQ
1.How can I place an order for NNCD6.8J-T1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.8J-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.8J-T1-A reliable?
The price and inventory of NNCD6.8J-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8J-T1-A is usually 5 days.
3.What payment methods are accepted for NNCD6.8J-T1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8J-T1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.8J-T1-A?
NNCD6.8J-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.8J-T1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.8J-T1-A?
For technical support, including NNCD6.8J-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8J-T1-A requirements.
6.How does Aetrix verify that NNCD6.8J-T1-A is sourced from the original manufacturer or authorized distributors?
All NNCD6.8J-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8J-T1-A meets industry standards.
7.What is the process for return or replacement of NNCD6.8J-T1-A?
All NNCD6.8J-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8J-T1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.8J-T1-A part is unused and in its original packaging.
Return procedure for NNCD6.8J-T1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.8J-T1-A Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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