My Inquiry
My Account
Renesas NNCD6.8LG-T1-A
- Part No.:
- NNCD6.8LG-T1-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- SC-74A, SOT-753
- Datasheet:
-
NNCD6.8LG-T1-A.pdf
- Description:
- NNCD6.8LG-T1-A - LOW CAPACITANCE
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NNCD6.8LG-T1-A from Renesas Electronics is a low-capacitance, quad-channel ESD protection diode in a 5-pin Mini Mold package with common-anode configuration. It delivers 6.2–7.1 V breakdown voltage, ≤7 pF reverse capacitance at 0 V, 8 kV IEC 1000-4-2 contact discharge ESD immunity, and 2 W surge power handling for high-speed USB interface protection.
For engineers reviewing the NNCD6.8LG-T1-A datasheet, NNCD6.8LG-T1-A pinout, NNCD6.8LG-T1-A application, or NNCD6.8LG-T1-A equivalent, key selection criteria include low capacitance for signal integrity, multi-channel common-anode topology for compact bus protection, and verified 8 kV ESD robustness per IEC 1000-4-2 - critical for USB 2.0, HDMI, and other high-speed serial interfaces.
Technical Context
This device implements four identical silicon avalanche diodes connected in a common-anode (quarto) configuration, enabling simultaneous clamping of four signal lines to ground via a shared anode terminal. Each cathode-anode path supports independent ESD transient absorption up to 2 W (10 µs pulse), with dynamic impedance ≤30 Ω at 5 mA test current.
The low 7 pF typical capacitance (measured at VR = 0 V, f = 1 MHz) minimizes signal distortion on differential or single-ended high-speed lines, while the 6.2–7.1 V breakdown range ensures reliable clamping above normal operating voltages without false triggering during transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 6.2–7.1 V min/max - sets precise clamping threshold above 3.3 V/5 V logic rails without leakage risk. |
| Reverse Capacitance (Ct) | 7 pF typ @ 0 V, 1 MHz - preserves signal integrity on USB 2.0 (480 Mbps) and similar high-speed buses. |
| ESD Withstand (IEC 1000-4-2) | 8 kV contact discharge - meets industrial and consumer-grade ESD immunity requirements. |
| Dynamic Impedance (Zz) | ≤30 Ω @ 5 mA - ensures fast, low-voltage clamping to limit transient overshoot. |
| Surge Power (PRSM) | 2 W @ 10 µs pulse - handles high-energy ESD events without degradation. |
| Package | 5-pin Mini Mold - enables high-density PCB layout with 2.8 × 2.9 mm footprint and 0.65 mm pitch. |
Pinout & Package
Supplied in a surface-mount 5-pin Mini Mold package (2.8 × 2.9 × 1.1–1.4 mm), with gull-wing leads and standardized pin numbering. Pin 1 is Cathode 1, Pin 2 is Anode (common), Pin 3 is Cathode 2, Pin 4 is Cathode 3, and Pin 5 is Cathode 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 | ESD clamp output for first protected signal line (e.g., USB D+). |
| 2 | Anode (Common) | Shared anode connection tied to ground or low-impedance return path. |
| 3 | Cathode 2 | ESD clamp output for second protected signal line (e.g., USB D−). |
| 4 | Cathode 3 | ESD clamp output for third signal line (e.g., VBUS detect or auxiliary control). |
| 5 | Cathode 4 | ESD clamp output for fourth signal line (e.g., ID pin or sideband use). |
Key Features
| Feature | Design Value |
|---|---|
| Quad Common-Anode Topology | Four independent ESD paths share one grounded anode - reduces component count and PCB area vs. discrete diodes. |
| Low 7 pF Capacitance | Minimizes insertion loss and timing skew on 480 Mbps USB 2.0 differential pairs. |
| 8 kV IEC 1000-4-2 Rating | Validated ESD robustness for end-equipment compliance without additional system-level shielding. |
| 2 W Surge Power Handling | Withstands multiple high-energy ESD strikes without parametric shift or failure. |
Applications
| USB 2.0 Interface Protection | HDMI Data Lane Protection |
|---|---|
Use Scenario: Protecting upstream/downstream USB ports on laptops, docking stations, and peripherals against user-handling ESD events. IC Role / Device Role / Timing Role: Low-capacitance bidirectional ESD clamp placed directly at connector, shunting transients before IC input pins. Use Value: Prevents latch-up or damage to USB transceivers while maintaining eye diagram integrity at 480 Mbps. | Use Scenario: Safeguarding HDMI TMDS data channels (CLK, DATA0–2) from electrostatic discharge during cable insertion. IC Role / Device Role / Timing Role: Signal-line ESD suppressor with sub-10 pF loading, positioned between connector and HDMI PHY. Use Value: Enables full 1080p/60 Hz transmission without jitter increase or bit error rate degradation. |
| Industrial Serial Port Protection | Mobile Device Charging Port Protection |
Use Scenario: Hardening RS-485 or CAN FD physical layer interfaces in factory automation equipment exposed to dry-environment ESD. IC Role / Device Role / Timing Role: Multi-line transient voltage suppressor for differential bus lines, leveraging common-anode grounding. Use Value: Eliminates need for separate TVS diodes per line, reducing BOM cost and routing complexity. | Use Scenario: Protecting micro-USB or USB-C receptacles in smartphones and tablets against repeated plug/unplug ESD stress. IC Role / Device Role / Timing Role: Integrated quad ESD solution covering VBUS, CC, D+, and D− pins in space-constrained layouts. Use Value: Achieves IEC 61000-4-2 Level 4 compliance in <1.5 mm² board area, supporting thin-form-factor designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | 4-channel, 0.5 pF typical capacitance, 12 kV IEC 61000-4-2, SOT-563 package (1.6 × 1.6 mm). | Lower capacitance suits USB 3.0/PCIe Gen2; smaller footprint but lower surge rating (1.5 W). | Choose for higher-speed interfaces where <1 pF loading is mandatory and peak surge energy is moderate. |
| ESD5V3U2MUTAG | Quad, 5.3 V breakdown, 12 pF capacitance, 12 kV ESD rating, SOT-563 package. | Higher capacitance limits use to ≤480 Mbps; higher ESD rating but less precise clamping voltage control. | Prefer when maximum ESD margin is prioritized over signal fidelity on legacy USB 2.0 or UART lines. |
Compared with TPD4E001DRYR and ESD5V3U2MUTAG, the NNCD6.8LG-T1-A offers a balanced trade-off: tighter 6.2–7.1 V breakdown tolerance for stable clamping, proven 2 W surge capability for rugged environments, and 7 pF loading optimized specifically for USB 2.0 signal integrity - making it ideal for cost-sensitive, high-volume industrial and consumer port protection.
Availability
NNCD6.8LG-T1-A is available at Aetrix Electronics and suitable for USB interface protection, HDMI data lane hardening, and industrial serial port ESD suppression requiring stable component supply across production lifecycles.
Supply support for NNCD6.8LG-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.
The NNCD6.8LG-T1-A belongs to Renesas' legacy low-capacitance ESD diode family, engineered specifically for high-speed digital interface protection - emphasizing minimal signal loading, repeatable clamping behavior, and robust IEC 1000-4-2 compliance in compact packages.
FAQ
What is the exact breakdown voltage range specified for NNCD6.8LG-T1-A?
The NNCD6.8LG-T1-A has a guaranteed breakdown voltage range of 6.2 V minimum to 7.1 V maximum, measured at 5 mA test current per diode channel. This range ensures reliable clamping above standard 3.3 V and 5 V logic supply levels while avoiding premature conduction during normal operation. The specification is validated per the datasheet's Electrical Characteristics table and applies individually to each of the four cathode-anode paths in the NNCD6.8LG-T1-A.
Does NNCD6.8LG-T1-A support IEC 61000-4-2 Level 4 ESD testing?
Yes, the NNCD6.8LG-T1-A is rated for 8 kV contact discharge per IEC 61000-4-2, which corresponds to Level 4 - the highest severity level defined in that standard. This rating is confirmed in the datasheet's Electrical Characteristics table under "ESD Voltage" and applies to all four channels. The NNCD6.8LG-T1-A maintains functionality after exposure, with no parameter shift beyond specification limits.
What is the reverse capacitance of NNCD6.8LG-T1-A and at what conditions is it measured?
The NNCD6.8LG-T1-A exhibits 7 pF typical reverse capacitance, measured at VR = 0 V and f = 1 MHz. This value is specified in the datasheet's Electrical Characteristics table and reflects the combined junction capacitance of one cathode-anode path. The low capacitance ensures minimal loading on high-speed signals such as USB 2.0 differential pairs, preserving rise time and eye opening in the NNCD6.8LG-T1-A's target applications.
Can NNCD6.8LG-T1-A be used for HDMI or DisplayPort interface protection?
Yes, the NNCD6.8LG-T1-A is suitable for HDMI TMDS data lanes (including clock and data channels) due to its 7 pF capacitance and fast response, provided signal rates remain at or below 1.65 Gbps (HDMI 1.3). It is not recommended for DisplayPort 1.4 (8.1 Gbps) or HDMI 2.1 (48 Gbps) where sub-0.5 pF loading is required. For HDMI 1.4/2.0 applications, the NNCD6.8LG-T1-A provides effective ESD protection without compromising signal integrity.
What is the thermal limitation of NNCD6.8LG-T1-A during repeated ESD events?
The NNCD6.8LG-T1-A has a maximum junction temperature of 150°C and a transient thermal impedance of 625°C/W (per Figure 4). Under repetitive 10 µs, 2 W pulses with sufficient off-time (>100 ms), self-heating remains within safe limits. However, sustained or high-frequency surges require thermal derating per the P–TA curve in Figure 1. Continuous operation must stay within the 200 mW total power dissipation limit at 25°C ambient - a key design constraint for the NNCD6.8LG-T1-A in thermally constrained layouts.
NNCD6.8LG-T1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- SC-74A, SOT-753
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 2W
- Power Line Protection:
- No
- Applications:
- Telecom, USB
- Capacitance @ Frequency:
- 7pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-Mini Mold
NNCD6.8LG-T1-A FAQ
1.How can I place an order for NNCD6.8LG-T1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.8LG-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.8LG-T1-A reliable?
The price and inventory of NNCD6.8LG-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8LG-T1-A is usually 5 days.
3.What payment methods are accepted for NNCD6.8LG-T1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8LG-T1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.8LG-T1-A?
NNCD6.8LG-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.8LG-T1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.8LG-T1-A?
For technical support, including NNCD6.8LG-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8LG-T1-A requirements.
6.How does Aetrix verify that NNCD6.8LG-T1-A is sourced from the original manufacturer or authorized distributors?
All NNCD6.8LG-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8LG-T1-A meets industry standards.
7.What is the process for return or replacement of NNCD6.8LG-T1-A?
All NNCD6.8LG-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8LG-T1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.8LG-T1-A part is unused and in its original packaging.
Return procedure for NNCD6.8LG-T1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.8LG-T1-A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
