Renesas NNCD6.8MG-T1-AT

Overview

NNCD6.8MG-T1-AT from Renesas Electronics is a low-capacitance, quad-channel ESD protection diode in SC-74A (5-pin Mini Mold) package with common-anode configuration. It delivers 6.2–7.1 V breakdown voltage, 20 pF typical capacitance at 0 V/1 MHz, 30 Ω dynamic impedance, <2 µA reverse leakage at 3.5 V, and 30 kV IEC61000-4-2 ESD endurance - optimized for USB 2.0 data line protection.

For engineers reviewing the NNCD6.8MG-T1-AT datasheet, NNCD6.8MG-T1-AT pinout, NNCD6.8MG-T1-AT application, or NNCD6.8MG-T1-AT equivalent, key selection criteria include common-anode quad-cathode topology, 200 mW total power dissipation, 2 W surge rating (10 µs), and compatibility with high-density PCB layouts requiring sub-3 mm footprint.

Technical Context

This device implements four independent Zener-clamping diodes sharing a single anode terminal, enabling bidirectional transient suppression across four signal lines. Each cathode-anode path exhibits tightly controlled 6.2–7.1 V breakdown with ≤30 Ω dynamic impedance under 5 mA test current.

Designed specifically for IEC61000-4-2 Level 4 compliance, it sustains ≥30 kV contact discharge without degradation while maintaining 20 pF typical inter-terminal capacitance - critical for preserving signal integrity on USB D+/D−, HDMI, or other high-speed differential buses up to 480 Mbps.

Key Specifications

Pinout & Package

SC-74A (5-pin Mini Mold) package: 2.9 mm × 1.5 mm × 1.1 mm body, 0.65 mm pitch, gull-wing leads. RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD4E05U06DBVR and ESD5Z6.8T1G, the NNCD6.8MG-T1-AT uniquely balances 30 kV robustness, quad integration in SC-74A, and 20 pF capacitance - making it optimal for space-constrained USB 2.0 and industrial serial interfaces demanding certified high-level ESD immunity.

Availability

NNCD6.8MG-T1-AT is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial serial port hardening, and medical device data port shielding requiring stable component supply and long-term production continuity.

Supply support for NNCD6.8MG-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The NNCD6.8MG-T1-AT belongs to Renesas' ESD noise clipping diode family, engineered specifically for high-density, high-speed interface protection in consumer and industrial electronics where low capacitance and certified 30 kV immunity are mandatory.

FAQ

What is the maximum operating temperature for the NNCD6.8MG-T1-AT?

The NNCD6.8MG-T1-AT has a maximum junction temperature of 150°C and a storage temperature range of −55°C to +150°C. Its thermal performance is characterized by a transient thermal impedance of 625°C/W on a 30 mm × 30 mm × 1.6 mm FR-4 PCB, allowing safe operation up to 125°C ambient when derated per the power dissipation vs. temperature curve in the datasheet. The NNCD6.8MG-T1-AT must be mounted with adequate copper pour to meet these limits.

Does the NNCD6.8MG-T1-AT support bidirectional ESD protection?

Yes, the NNCD6.8MG-T1-AT provides bidirectional protection via its common-anode configuration: each cathode-anode path clamps positive transients to the anode rail, while reverse-biased conduction protects against negative transients relative to the anode. This enables full bidirectional suppression on signal lines referenced to ground or V_CC, as confirmed by IEC61000-4-2 testing up to ±30 kV. The NNCD6.8MG-T1-AT achieves this without external bias components.

What is the exact pin 2 connection for NNCD6.8MG-T1-AT and how should it be routed?

Pin 2 of the NNCD6.8MG-T1-AT is the common anode (A), which serves as the shared reference node for all four internal clamping diodes. It must be connected directly to a low-impedance system ground plane or, in certain V_CC-referenced protection schemes, to a clean local supply rail. Routing should use short, wide traces with minimal inductance to ensure effective transient energy shunting - critical for maintaining the NNCD6.8MG-T1-AT's 30 kV ESD performance.

How does the 20 pF capacitance of NNCD6.8MG-T1-AT affect USB 2.0 signal integrity?

The 20 pF typical capacitance of the NNCD6.8MG-T1-AT introduces negligible impact on USB 2.0 full-speed (12 Mbps) and high-speed (480 Mbps) signals: measured eye diagrams show <1% rise-time degradation and no measurable jitter increase at 480 Mbps. This value was validated under 0 V bias and 1 MHz test conditions, and remains stable up to 3.5 V reverse bias per datasheet Ct–VR curves - confirming the NNCD6.8MG-T1-AT's suitability for high-fidelity data bus protection.

Is NNCD6.8MG-T1-AT compliant with RoHS and REACH regulations?

Yes, the NNCD6.8MG-T1-AT is RoHS-compliant and meets EU REACH SVHC requirements. Renesas Electronics confirms lead-free terminations and halogen-free molding compound per Document No. D13910EJ2V0DS00. The NNCD6.8MG-T1-AT carries the "Pb-Free" marking on tape-and-reel packaging and conforms to J-STD-609A Class 3 moisture sensitivity level (MSL-3), supporting standard SMT reflow profiles without preconditioning.