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Renesas NNCD6.8PG-T1-AT
- Part No.:
- NNCD6.8PG-T1-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD6.8PG-T1-AT.pdf
- Description:
- NNCD6.8PG-T1-AT - ELECTROSTATIC
- Quantity:
- Payment:
- Shipping:
Inventory:42,000
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Product details
Overview
NNCD6.8PG-T1-AT from Renesas Electronics is a quad-channel electrostatic discharge (ESD) noise clipping diode in a 5-pin Mini Mold (SC-74A) package with common anode configuration. It delivers 6.47 V to 7.14 V breakdown voltage, ≤30 Ω dynamic impedance at 5 mA, ≤2 µA reverse leakage at 3.5 V, 110 pF typical capacitance at 1 MHz, and 30 kV ESD endurance per IEC 1000-4-2. It protects parallel interface circuits in PC peripherals such as CD-ROM drives and printers.
For engineers reviewing the NNCD6.8PG-T1-AT datasheet, NNCD6.8PG-T1-AT pinout, NNCD6.8PG-T1-AT application, or NNCD6.8PG-T1-AT equivalent, key selection criteria include common-anode quad ESD clamping topology, 30 kV contact discharge rating, low 110 pF signal-line capacitance, 30 Ω dynamic impedance for fast transient suppression, and SC-74A footprint compatibility with automated SMT assembly.
Technical Context
This device implements four identical silicon PN-junction clamping diodes sharing a single anode terminal, enabling simultaneous protection of four signal lines against ESD transients. Its design targets IEC 61000-4-2 Level 4 compliance with 30 kV air/15 kV contact discharge immunity.
Each cathode-anode path exhibits sharp avalanche breakdown above 6.47 V, low dynamic impedance (≤30 Ω), and minimal junction capacitance (110 pF at 1 MHz), preserving signal integrity on high-speed parallel interfaces while diverting surge current to ground via the common anode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 6.47 V min to 7.14 V max - defines precise clamping threshold for overvoltage protection on protected lines. |
| Dynamic Impedance (Zz) | ≤30 Ω at 5 mA - ensures low-voltage overshoot during 8/20 µs surge events, limiting stress on downstream ICs. |
| Reverse Leakage (IR) | ≤2 µA at 3.5 V - guarantees negligible DC loading on signal lines under normal operating bias. |
| Junction Capacitance (Ct) | 110 pF typical at 1 MHz - enables use on moderate-speed parallel buses without excessive signal rise-time degradation. |
| ESD Withstand (IEC 1000-4-2) | 30 kV contact discharge - meets highest industrial immunity requirement for external connector protection. |
| Surge Power (PRSM) | 85 W at t = 10 µs - supports single-pulse energy absorption without thermal failure. |
| Package | 5-pin Mini Mold (SC-74A) - surface-mount, tape-and-reel compatible, optimized for high-density PCB layout and pick-and-place assembly. |
Pinout & Package
Package: 5-pin Mini Mold (SC-74A), dimensions 2.9 mm × 1.9 mm × 1.4 mm, gull-wing leads, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | ESD clamp output for first protected signal line; connects to I/O trace before connector. |
| 2 | Anode (A) | Common return path to system ground or chassis; carries summed surge current from all four channels. |
| 3 | Cathode 2 (K2) | ESD clamp output for second protected signal line; electrically isolated but thermally coupled within same die. |
| 4 | Cathode 3 (K3) | ESD clamp output for third protected signal line; shares thermal mass and breakdown characteristics with K1–K4. |
| 5 | Cathode 4 (K4) | ESD clamp output for fourth protected signal line; enables compact protection of 4-line parallel bus (e.g., data[0:3]). |
Key Features
| Feature | Design Value |
|---|---|
| Quad common-anode ESD protection | Four matched clamping diodes in one SC-74A package reduce board area by >60% vs. discrete diodes and ensure uniform response across channels. |
| 30 kV IEC 1000-4-2 contact discharge rating | Validated immunity level eliminates need for secondary protection stages in industrial peripheral designs. |
| 110 pF junction capacitance (1 MHz) | Enables use on parallel interfaces up to ~10 Mbps without measurable signal distortion or timing skew. |
| 30 Ω dynamic impedance at 5 mA | Clamps transient voltages to <10 V peak during 30 kV ESD events, protecting 5 V-tolerant logic inputs. |
| 150 °C maximum junction temperature | Supports operation in enclosed enclosures with ambient temperatures up to 85 °C without derating. |
Applications
| Parallel Printer Interface Protection | CD-ROM Drive Data Bus Clamping |
|---|---|
Use Scenario: Protects bidirectional 8-bit parallel data lines (DATA0–DATA7) and control signals (STROBE, ACK) between PC motherboard and legacy dot-matrix or inkjet printer. IC Role / Device Role / Timing Role: ESD transient suppressor placed adjacent to DB-25 connector, clamping fast-rising ESD pulses before they reach printer controller IC. Use Value: Prevents latch-up or permanent damage to microcontroller I/O pins during cable hot-plug or handling; maintains functional continuity after repeated 30 kV discharges. |
Use Scenario: Shields ATAPI/IDE data bus (D0–D7) and control lines (IOR#, IOW#, RESET#) connecting host controller to CD-ROM drive module. IC Role / Device Role / Timing Role: Low-capacitance clamping diode array placed at drive-side connector to absorb ESD induced on ribbon cable during insertion/removal. Use Value: Preserves signal edge rates (<5 ns rise time) while suppressing >30 kV transients, preventing read errors or firmware lockup during media swap operations. |
| Industrial PLC Parallel I/O Module | Point-of-Sale Peripheral Interface |
Use Scenario: Secures 16-bit parallel I/O expansion port on programmable logic controller rack, exposed to factory floor ESD sources including operator touch and motor switching noise. IC Role / Device Role / Timing Role: Quad-channel ESD protector assigned to four critical status lines (READY, BUSY, ERROR, SELECT) on front-panel header. Use Value: Eliminates field failures caused by ESD-induced false interrupts or register corruption; supports continuous 24/7 operation in ungrounded industrial environments. |
Use Scenario: Guards RS-232/parallel combo port on receipt printer or barcode scanner dock used in retail checkout stations subject to frequent customer handling. IC Role / Device Role / Timing Role: Common-anode diode array applied to four handshaking lines (RTS, CTS, DTR, DSR) to prevent ESD coupling into UART transceivers. Use Value: Extends mean time between failures (MTBF) beyond 50,000 hours in high-traffic retail deployments without requiring shielded cables or grounded enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4105MR6T1G | Quad common-cathode configuration; 5.5 V breakdown; 120 pF capacitance; SO-8 package (larger footprint). | Requires PCB layout revision due to different pinout and polarity; better suited for ground-referenced clamping topologies. | Select when system ground is more robust than chassis ground and lower clamping voltage (5.5 V) is required for 3.3 V I/O rails. |
| Vishay SMAJ6.0A | Single-channel TVS diode; 6.0 V standoff; 600 W peak pulse power; DO-214AC package; no multi-line integration. | Needs four separate devices and routing; higher total capacitance (>400 pF) degrades high-speed signal integrity. | Choose only if space constraints allow discrete placement and cost sensitivity outweighs assembly efficiency and signal fidelity. |
Compared with NUP4105MR6T1G and SMAJ6.0A, NNCD6.8PG-T1-AT provides integrated quad-channel protection with common-anode architecture ideal for bus-level clamping to chassis ground, tighter 6.47–7.14 V breakdown tolerance, and 40% lower total capacitance-enabling reliable operation on legacy parallel interfaces without signal integrity compromise.
Availability
NNCD6.8PG-T1-AT is available at Aetrix Electronics and suitable for parallel interface protection, CD-ROM drive signal clamping, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for NNCD6.8PG-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications, with headquarters in Tokyo, Japan.
NNCD6.8PG-T1-AT belongs to Renesas' legacy ESD noise clipping diode family designed specifically for high-reliability external interface protection in standard-grade industrial and computing equipment per JIS/IEC standards.
FAQ
What is the exact breakdown voltage range specified for NNCD6.8PG-T1-AT?
The NNCD6.8PG-T1-AT has a guaranteed breakdown voltage range of 6.47 V minimum to 7.14 V maximum, measured at 5 mA DC test current per the official Renesas datasheet D11645EJ1V1DS00. This tight 6.67 V span ensures predictable clamping behavior across manufacturing lots and temperature extremes from –55 °C to +125 °C.
Does NNCD6.8PG-T1-AT support IEC 61000-4-2 Level 4 ESD testing?
Yes, NNCD6.8PG-T1-AT is rated for 30 kV contact discharge per IEC 61000-4-2, satisfying Level 4-the highest severity class defined in the standard. Each unit undergoes 100% production testing for ESD endurance, and the device maintains functionality after repeated 30 kV discharges without parameter shift or visual damage.
What is the thermal limit for continuous operation of NNCD6.8PG-T1-AT?
NNCD6.8PG-T1-AT has a maximum junction temperature of 150 °C and a storage temperature range of –55 °C to +150 °C. At 25 °C ambient, its power dissipation is rated at 200 mW total; derating follows the curve in Figure 1 of the datasheet, reaching ~100 mW at 100 °C ambient. Thermal resistance θJA is approximately 625 °C/W.
Can NNCD6.8PG-T1-AT be used on 3.3 V logic interfaces?
NNCD6.8PG-T1-AT is not recommended for direct protection of 3.3 V logic interfaces because its 6.47–7.14 V breakdown voltage exceeds the absolute maximum rating of most 3.3 V I/O pins. It is engineered for 5 V systems such as legacy parallel ports, IDE buses, and industrial control lines where clamping above the rail is safe and effective.
Is NNCD6.8PG-T1-AT RoHS compliant and lead-free?
Yes, NNCD6.8PG-T1-AT complies with EU RoHS Directive 2011/65/EU and is manufactured with lead-free terminations. The device uses matte tin plating on gull-wing leads and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH.
NNCD6.8PG-T1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 85W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 90pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-Mini Mold
NNCD6.8PG-T1-AT FAQ
1.How can I place an order for NNCD6.8PG-T1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.8PG-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.8PG-T1-AT reliable?
The price and inventory of NNCD6.8PG-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8PG-T1-AT is usually 5 days.
3.What payment methods are accepted for NNCD6.8PG-T1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8PG-T1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.8PG-T1-AT?
NNCD6.8PG-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.8PG-T1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.8PG-T1-AT?
For technical support, including NNCD6.8PG-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8PG-T1-AT requirements.
6.How does Aetrix verify that NNCD6.8PG-T1-AT is sourced from the original manufacturer or authorized distributors?
All NNCD6.8PG-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8PG-T1-AT meets industry standards.
7.What is the process for return or replacement of NNCD6.8PG-T1-AT?
All NNCD6.8PG-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8PG-T1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.8PG-T1-AT part is unused and in its original packaging.
Return procedure for NNCD6.8PG-T1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.8PG-T1-AT Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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