My Inquiry
My Account
Renesas NNCD6.8RG-T1-A
- Part No.:
- NNCD6.8RG-T1-A
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD6.8RG-T1-A.pdf
- Description:
- NNCD6.8RG-T1-A - LOW CAPACITANCE
- Quantity:
- Payment:
- Shipping:
Inventory:96,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NNCD6.8RG-T1-A from Renesas Electronics is a low-capacitance, common-anode quad ESD protection diode in a 5-pin Mini Mold package, rated for 6.8 V breakdown voltage (6.2–7.1 V), 10 pF capacitance at 0 V/1 MHz, 8 kV IEC 61000-4-2 contact discharge immunity, and 200 mW total power dissipation - designed for high-speed USB interface line protection.
For engineers reviewing the NNCD6.8RG-T1-A datasheet, NNCD6.8RG-T1-A pinout, NNCD6.8RG-T1-A application, or NNCD6.8RG-T1-A equivalent, key selection criteria include clamping performance under fast ESD transients, minimal signal distortion due to ultra-low capacitance, common-anode topology for bidirectional bus protection, and compatibility with automated SMT assembly in space-constrained USB Type-A/B and micro-USB layouts.
Technical Context
The NNCD6.8RG-T1-A integrates four identical silicon avalanche diodes sharing a single anode terminal, forming a quartet of unidirectional clamping paths from cathodes K1–K4 to the common anode A. Each path provides symmetric ESD suppression with 6.8 V nominal breakdown and dynamic impedance ≤3.5 Ω at 40 A peak current.
Its 10 pF inter-terminal capacitance (A-to-Kx) ensures minimal loading on high-speed differential pairs, while the 5-pin Mini Mold package (2.9 × 1.5 mm, 0.95 mm height) supports board-level density requirements typical of portable USB host/peripheral designs without compromising thermal derating - power dissipation remains within 200 mW up to 70°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 6.2–7.1 V (min/max at 5 mA); defines clamping threshold for transient overvoltage suppression on data lines. |
| Capacitance | 10 pF (at VR = 0 V, f = 1 MHz); enables <1% signal attenuation on USB 2.0 (480 Mbps) differential channels. |
| ESD Withstand | ≥8 kV contact discharge per IEC 61000-4-2; meets industrial-grade USB port immunity requirements. |
| Dynamic Impedance | ≤3.5 Ω (at IT = 40 A); limits peak clamped voltage to ≤14 V during 8 kV ESD event. |
| Power Dissipation | 200 mW (total, TA = 25°C); supports continuous operation in handheld device PCB environments. |
| Surge Power | 2 W (t = 10 µs, non-repetitive); handles single-event electrostatic energy without degradation. |
Pinout & Package
Package: 5-pin Mini Mold (2.9 × 1.5 × 0.95 mm), surface-mount, RoHS-compliant, tape-and-reel (T1-A denotes 3,000 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode 1 | ESD clamp path for first protected signal line (e.g., USB D+). |
| 2 (A) | Anode (common) | Shared anode node tied to ground or low-impedance return plane. |
| 3 (K2) | Cathode 2 | ESD clamp path for second protected signal line (e.g., USB D−). |
| 4 (K3) | Cathode 3 | Clamp path for third line (e.g., VBUS sense or ID pin in micro-USB). |
| 5 (K4) | Cathode 4 | Clamp path for fourth line (e.g., shield or auxiliary control signal). |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode quad configuration | Enables compact, single-component protection of four independent signal lines with shared ground reference. |
| 10 pF inter-terminal capacitance | Maintains USB 2.0 signal integrity by limiting insertion loss and jitter accumulation across full bandwidth. |
| 8 kV IEC 61000-4-2 contact discharge rating | Meets EN 61000-4-2 Level 4 compliance for external-facing USB ports in consumer and industrial equipment. |
| 200 mW total power dissipation | Supports sustained operation in thermally constrained mobile PCB layouts without forced cooling. |
Applications
| USB 2.0 Host Port Protection | USB 2.0 Peripheral Port Protection |
|---|---|
Use Scenario: Protecting exposed USB Type-A receptacles on laptops, docking stations, and industrial HMIs against user-handled ESD events. IC Role / Device Role / Timing Role: Quad-directional transient voltage suppressor placed between connector pins and PHY IC, with common anode grounded. Use Value: Prevents latch-up or damage to USB transceivers during 8 kV contact discharge while preserving eye diagram margin via 10 pF loading. |
Use Scenario: Safeguarding USB micro-B or mini-B ports on portable medical monitors, barcode scanners, and test instruments. IC Role / Device Role / Timing Role: Low-capacitance ESD shunt for D+, D−, ID, and VBUS sense lines prior to USB controller input buffers. Use Value: Enables robust field reliability without degrading rise/fall times (<1 ns impact) on 480 Mbps data streams. |
| High-Density Embedded USB Interface | Multi-Function Docking Connector Protection |
Use Scenario: Integrating ESD protection into space-limited embedded systems using USB OTG or device-only functionality. IC Role / Device Role / Timing Role: Single-package solution replacing four discrete 0402 TVS diodes, reducing BOM count and layout area by >60%. Use Value: Achieves IPC Class 3 assembly yield with automated pick-and-place while maintaining 6.8 V clamping symmetry across all four channels. |
Use Scenario: Protecting hybrid connectors combining USB 2.0, UART, and GPIO signals in modular test adapters and field-deployable dongles. IC Role / Device Role / Timing Role: Common-anode architecture allows shared ground return for mixed-signal lines, minimizing ground bounce. Use Value: Eliminates need for separate grounding nets per signal, simplifying stack-up design and reducing crosstalk risk in 6-layer PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESD9X5.0ST5G | Single-channel, 5.0 V breakdown, 30 pF capacitance; lower voltage rating, higher capacitance. | Requires four devices for quad-line protection; unsuitable for USB 2.0 due to excessive signal loading. | Prefer NNCD6.8RG-T1-A when protecting high-speed differential pairs where <15 pF is mandatory. |
| Vishay VEML6030X01 | Optical sensor IC - not an ESD diode; incompatible function and package. | Not applicable for transient suppression; serves ambient light sensing only. | Exclude from ESD protection evaluation; verify part number before sourcing. |
Compared with ESD9X5.0ST5G and VEML6030X01, the NNCD6.8RG-T1-A uniquely delivers quad-channel, common-anode, sub-10-pF ESD clamping in one Mini Mold package - enabling direct replacement of discrete solutions in USB 2.0 designs without sacrificing bandwidth or board area.
Availability
NNCD6.8RG-T1-A is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial HMI front-panel interfaces, and portable medical device connectivity requiring stable component supply and long-term lifecycle support.
Supply support for NNCD6.8RG-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The NNCD6.8RG-T1-A belongs to Renesas' legacy ESD protection diode family, engineered specifically for high-density, high-speed digital interface protection in consumer and industrial electronics - emphasizing low capacitance, repeatable clamping, and automated assembly compatibility.
FAQ
What is the exact breakdown voltage range specified for NNCD6.8RG-T1-A?
The NNCD6.8RG-T1-A has a guaranteed breakdown voltage range of 6.2 V to 7.1 V, measured at 5 mA DC test current per diode channel (A-to-K1 through A-to-K4). This range ensures consistent clamping behavior across production lots and temperature extremes, supporting reliable USB line protection without premature conduction during normal 3.3 V or 5 V signaling.
Does NNCD6.8RG-T1-A support IEC 61000-4-2 Level 4 ESD immunity?
Yes, the NNCD6.8RG-T1-A is rated for ≥8 kV contact discharge per IEC 61000-4-2, satisfying Level 4 - the highest severity level defined in the standard. This rating was verified under standardized test conditions (150 pF capacitor, 330 Ω series resistor) and applies to each of its four cathode terminals referenced to the common anode.
Can NNCD6.8RG-T1-A be used to protect USB 3.0 or USB-C interfaces?
No - the NNCD6.8RG-T1-A is characterized and validated only for USB 2.0 (480 Mbps) applications. Its 10 pF capacitance exceeds recommended limits for SuperSpeed differential pairs (typically ≤1.5 pF), and no performance data exists for 5 Gbps signaling integrity. For USB 3.x or USB-C, use Renesas' newer low-capacitance arrays such as RCLAMP0524P or equivalent.
What is the thermal derating behavior of NNCD6.8RG-T1-A above 25°C ambient?
NNCD6.8RG-T1-A exhibits linear thermal derating: power dissipation decreases from 200 mW at 25°C to zero at 150°C junction temperature. Derating follows a slope of −2.22 mW/°C above 25°C, as confirmed by Figure 1 in the original datasheet. At 70°C ambient, maximum allowable continuous power drops to ~100 mW.
Is NNCD6.8RG-T1-A RoHS compliant and lead-free?
Yes, NNCD6.8RG-T1-A is RoHS compliant and lead-free, consistent with Renesas' manufacturing standards effective from the September 2002 datasheet revision. The "T1-A" suffix indicates tape-and-reel packaging meeting JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with no post-reflow baking required.
NNCD6.8RG-T1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 2W
- Power Line Protection:
- No
- Applications:
- Telecom, USB
- Capacitance @ Frequency:
- 10pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD6.8RG-T1-A FAQ
1.How can I place an order for NNCD6.8RG-T1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.8RG-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.8RG-T1-A reliable?
The price and inventory of NNCD6.8RG-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8RG-T1-A is usually 5 days.
3.What payment methods are accepted for NNCD6.8RG-T1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8RG-T1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.8RG-T1-A?
NNCD6.8RG-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.8RG-T1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.8RG-T1-A?
For technical support, including NNCD6.8RG-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8RG-T1-A requirements.
6.How does Aetrix verify that NNCD6.8RG-T1-A is sourced from the original manufacturer or authorized distributors?
All NNCD6.8RG-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8RG-T1-A meets industry standards.
7.What is the process for return or replacement of NNCD6.8RG-T1-A?
All NNCD6.8RG-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8RG-T1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.8RG-T1-A part is unused and in its original packaging.
Return procedure for NNCD6.8RG-T1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.8RG-T1-A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
