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Renesas NNCD6.8RG-T1-AT
- Part No.:
- NNCD6.8RG-T1-AT
- Manufacturer:
- Renesas
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NNCD6.8RG-T1-AT.pdf
- Description:
- NNCD6.8RG-T1-AT - LOW CAPACITANC
- Quantity:
- Payment:
- Shipping:
Inventory:28,004
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Product details
Overview
NNCD6.8RG-T1-AT from Renesas Electronics is a low-capacitance, common-anode quad ESD protection diode in a 5-pin mini mold package, rated for 6.8 V breakdown voltage, 10 pF capacitance (VR = 0 V, f = 1 MHz), and 8 kV contact ESD immunity per IEC 61000-4-2. It protects high-speed USB interface lines with four independent cathodes sharing one anode.
For engineers reviewing the NNCD6.8RG-T1-AT datasheet, NNCD6.8RG-T1-AT pinout, NNCD6.8RG-T1-AT application, or NNCD6.8RG-T1-AT equivalent, key selection criteria include its 10 pF inter-terminal capacitance, 6.2–7.1 V breakdown range, 200 mW total power dissipation, and common-anode quad configuration optimized for compact USB port protection.
Technical Context
The NNCD6.8RG-T1-AT implements a quartet of silicon avalanche diodes in a single common-anode configuration, enabling simultaneous clamping of four signal lines to ground via shared anode connection. Each A–K path exhibits 6.2–7.1 V breakdown at 5 mA and dynamic impedance ≤40 Ω at 1 A pulse.
Its 10 pF capacitance at 0 V bias ensures minimal signal distortion on USB 2.0 full-speed (12 Mbps) and high-speed (480 Mbps) differential pairs. The device operates within −55°C to +150°C storage range and supports automatic surface-mount assembly due to its 5-pin mini mold footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 6.2–7.1 V at 5 mA - defines precise clamping threshold for USB signal rails without false triggering |
| Capacitance | 10 pF at VR = 0 V, f = 1 MHz - preserves signal integrity on high-speed data lines up to 480 Mbps |
| ESD Withstand | ≥8 kV contact discharge per IEC 61000-4-2 - meets industrial-grade USB port immunity requirements |
| Power Dissipation | 200 mW total - limits thermal rise during multi-pulse ESD events in compact PCB layouts |
| Dynamic Impedance | ≤40 Ω at IT = 1 A - ensures low-voltage overshoot clamping during fast transient surges |
| Surge Power | 2 W (t = 10 µs, non-repetitive) - handles single-event electrostatic discharges without degradation |
Pinout & Package
Package: 5-pin mini mold (SOT-353-compatible footprint), dimensions 2.9 × 1.5 × 0.95 mm, lead pitch 0.65 mm, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode 1 | ESD clamp node for first protected signal line (e.g., USB D+) |
| 2 (A) | Anode (common) | Shared return path to ground or low-impedance reference plane |
| 3 (K2) | Cathode 2 | ESD clamp node for second protected signal line (e.g., USB D−) |
| 4 (K3) | Cathode 3 | ESD clamp node for third signal line (e.g., VBUS detect or ID pin) |
| 5 (K4) | Cathode 4 | ESD clamp node for fourth signal line (e.g., shield or auxiliary control) |
Key Features
| Feature | Design Value |
|---|---|
| Quad common-anode topology | Enables space-efficient protection of four independent signal lines with single-device footprint and shared ground path |
| 10 pF inter-terminal capacitance | Minimizes insertion loss and timing skew on USB 2.0 differential pairs without requiring layout compensation |
| 8 kV IEC 61000-4-2 contact rating | Meets end-equipment compliance requirements for consumer and industrial USB ports without external TVS staging |
| 200 mW total power dissipation | Supports repeated ESD events in automated test environments while maintaining junction temperature below 150°C |
Applications
| USB 2.0 Full-Speed Interface | USB 2.0 High-Speed Interface |
|---|---|
Use Scenario: Protection of D+ and D− lines on host-side USB connectors exposed to user handling. IC Role / Device Role: Low-capacitance bidirectional ESD clamp between signal and ground reference. Use Value: Prevents latch-up and gate oxide damage in USB transceivers while preserving eye diagram integrity at 12 Mbps. |
Use Scenario: ESD safeguarding of D+ and D− traces near Type-A or Micro-B receptacles in portable devices. IC Role / Device Role: Quad-channel transient voltage suppressor with matched capacitance across all paths. Use Value: Maintains <1% signal attenuation at 240 MHz fundamental frequency, enabling reliable 480 Mbps data transfer. |
| Industrial USB Device Port | Embedded Host Controller Interface |
Use Scenario: Robust front-panel USB ports on PLCs, HMIs, and test equipment subject to frequent cable insertion. IC Role / Device Role: Common-anode quad diode array absorbing contact and air-gap ESD pulses. Use Value: Delivers ≥8 kV contact immunity without derating over −40°C to +85°C operating range. |
Use Scenario: Signal-line protection between microcontroller USB PHY and external connector on custom carrier boards. IC Role / Device Role: Integrated ESD solution replacing discrete diode arrays and reducing BOM count by 75%. Use Value: Eliminates routing asymmetry between D+ and D− paths, improving common-mode noise rejection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | Single-channel, 15 pF capacitance, 5.5 V breakdown, SOT-553 package | Requires four separate devices for quad protection; higher capacitance limits USB 2.0 HS use | Prefer when board area allows discrete placement and lower clamping voltage is prioritized over density |
| ESD5Z6.8T1G | Single-channel, 12 pF, 6.8 V nominal breakdown, SOD-523 package | Not quad-configured; lacks common-anode integration; requires four placements and extra routing | Select when legacy layout uses individual diodes and thermal management favors smaller die size per channel |
Compared with TPD2E001DRYR and ESD5Z6.8T1G, the NNCD6.8RG-T1-AT delivers superior board-level integration for USB interfaces by consolidating four channels into one 5-pin package with 10 pF capacitance-reducing trace length mismatch, minimizing parasitic inductance, and cutting assembly cost by eliminating three additional placements.
Availability
NNCD6.8RG-T1-AT is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial HMI front panels, and embedded host controller designs requiring stable component supply and long-lifecycle support.
Supply support for NNCD6.8RG-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.
The NNCD6.8RG-T1-AT belongs to Renesas' legacy ESD protection diode family designed specifically for high-density, low-capacitance interface protection in consumer and industrial USB systems.
FAQ
What is the exact breakdown voltage range specified for NNCD6.8RG-T1-AT?
The NNCD6.8RG-T1-AT has a guaranteed breakdown voltage range of 6.2 V to 7.1 V at 5 mA test current, measured across each anode-to-cathode path (A–K1, A–K2, A–K3, A–K4). This range ensures consistent clamping behavior across all four channels while accommodating process variation, and is verified per the electrical characteristics table in Renesas document D15990EJ2V0DS.
Does NNCD6.8RG-T1-AT support USB 2.0 High-Speed (480 Mbps) operation?
Yes, the NNCD6.8RG-T1-AT supports USB 2.0 High-Speed operation due to its 10 pF inter-terminal capacitance at 0 V bias and 1 MHz, which introduces negligible insertion loss and phase distortion on differential signals. Its low dynamic impedance (≤40 Ω) also ensures effective clamping during ESD transients without disrupting signal eye diagrams at 480 Mbps.
How is the common-anode configuration of NNCD6.8RG-T1-AT implemented physically?
The NNCD6.8RG-T1-AT integrates four independent silicon avalanche diodes with their anodes internally bonded to a single metal trace connected to Pin 2 (A). Pins 1, 3, 4, and 5 serve as isolated cathodes (K1–K4), allowing each protected signal line to clamp independently to the shared anode node-typically tied to system ground or a low-impedance reference plane.
What is the maximum surge power rating for NNCD6.8RG-T1-AT and under what conditions?
The NNCD6.8RG-T1-AT is rated for 2 W of non-repetitive surge reverse power at t = 10 µs per pulse, as defined in the Maximum Ratings table. This rating applies to single-event ESD stress under IEC 61000-4-2 conditions and assumes TA = 25°C ambient; derating is required above 25°C per the power dissipation vs. ambient temperature curve in the datasheet.
Is NNCD6.8RG-T1-AT compliant with RoHS and lead-free assembly requirements?
Yes, the NNCD6.8RG-T1-AT is RoHS-compliant and qualified for lead-free reflow soldering. Its package construction and plating meet JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard SMT processes, and the device carries no exemptions under EU Directive 2011/65/EU.
NNCD6.8RG-T1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 2W
- Power Line Protection:
- No
- Applications:
- Telecom, USB
- Capacitance @ Frequency:
- 10pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
NNCD6.8RG-T1-AT FAQ
1.How can I place an order for NNCD6.8RG-T1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for NNCD6.8RG-T1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NNCD6.8RG-T1-AT reliable?
The price and inventory of NNCD6.8RG-T1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NNCD6.8RG-T1-AT is usually 5 days.
3.What payment methods are accepted for NNCD6.8RG-T1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NNCD6.8RG-T1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NNCD6.8RG-T1-AT?
NNCD6.8RG-T1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NNCD6.8RG-T1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NNCD6.8RG-T1-AT?
For technical support, including NNCD6.8RG-T1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NNCD6.8RG-T1-AT requirements.
6.How does Aetrix verify that NNCD6.8RG-T1-AT is sourced from the original manufacturer or authorized distributors?
All NNCD6.8RG-T1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NNCD6.8RG-T1-AT meets industry standards.
7.What is the process for return or replacement of NNCD6.8RG-T1-AT?
All NNCD6.8RG-T1-AT units undergo pre-shipment inspection (PSI). If there is an issue with NNCD6.8RG-T1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NNCD6.8RG-T1-AT part is unused and in its original packaging.
Return procedure for NNCD6.8RG-T1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NNCD6.8RG-T1-AT Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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