Renesas NNCD8.2C-T1-AT

Overview

NNCD8.2C-T1-AT from Renesas Electronics is an electrostatic discharge (ESD) noise clipping diode in a 2-pin Ultra Super Mini Mold package, rated for 150 mW power dissipation, with a breakdown voltage of 7.73–8.67 V, dynamic impedance ≤30 Ω at 5 mA, and ESD endurance ≥30 kV per IEC 1000-4-2. It protects external interface circuits such as parallel printer ports and CD-ROM connectors.

For engineers reviewing the NNCD8.2C-T1-AT datasheet, NNCD8.2C-T1-AT pinout, NNCD8.2C-T1-AT application, or NNCD8.2C-T1-AT equivalent, key selection criteria include clamping voltage, dynamic impedance, junction capacitance (90 pF), surge reverse power rating (85 W), and compatibility with low-capacitance signal lines in consumer and office equipment interfaces.

Technical Context

This device operates as a bidirectional transient voltage suppressor optimized for ESD protection on unidirectional or bidirectional signal lines. Its low dynamic impedance (≤30 Ω) ensures rapid clamping during 8/20 µs transients, while its 90 pF junction capacitance minimizes signal distortion on data lines up to ~10 MHz.

The diode is designed for surface-mount use in ultra-compact layouts, with thermal resistance governed by PCB pad area and material-typical transient thermal impedance is 833 °C/W at t = 1 ms. It meets IEC 1000-4-2 Level 4 (±30 kV contact discharge) without external series impedance.

Key Specifications

Pinout & Package

Package: 2-pin Ultra Super Mini Mold (SOD-523 equivalent footprint), dimensions 1.3 × 0.8 × 0.75 mm, cathode marked.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with NNCD8.2C-T1-AT, ESD9X8.2ST5G offers tighter clamping at the expense of bandwidth, while CM1224-02SO trades discrete flexibility for integration density-both require revalidation of PCB layout and signal integrity margins.

Availability

NNCD8.2C-T1-AT is available at Aetrix Electronics and suitable for parallel interface protection, CD-ROM connector hardening, and industrial keypad ESD mitigation requiring stable component supply across production lifecycles.

Supply support for NNCD8.2C-T1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The NNCD series was developed specifically for IEC 1000-4-2-compliant ESD protection in consumer and office equipment interfaces, emphasizing compact size, repeatable clamping behavior, and low-cost manufacturability.

FAQ

What is the maximum allowable junction temperature for NNCD8.2C-T1-AT?

The maximum junction temperature for NNCD8.2C-T1-AT is 150 °C, as specified in the Absolute Maximum Ratings table. This limit governs thermal design margins when operating at elevated ambient temperatures or under sustained power dissipation. Derating curves in Figure 1 show that usable power drops to ~80 mW at 75 °C ambient. Engineers must verify PCB copper area and airflow to ensure NNCD8.2C-T1-AT remains within this thermal boundary during worst-case ESD stress and steady-state bias.

Does NNCD8.2C-T1-AT meet IEC 61000-4-2 Level 4 ESD requirements?

Yes, NNCD8.2C-T1-AT is rated for ≥30 kV contact discharge per IEC 1000-4-2 (now superseded by IEC 61000-4-2), which corresponds to Level 4-the highest severity level defined in the standard. The datasheet explicitly states "endurance of no less than 30 kV" under this test condition. NNCD8.2C-T1-AT achieves this without external series resistance, making it suitable for direct placement on signal lines in certified industrial and consumer products.

What is the typical junction capacitance of NNCD8.2C-T1-AT and how does it affect signal integrity?

The typical junction capacitance of NNCD8.2C-T1-AT is 90 pF at VR = 0 V and f = 1 MHz. This value directly impacts high-frequency signal integrity: for a 10 MHz square wave, added capacitance introduces ~1.8 ns rise-time degradation per line. In practice, NNCD8.2C-T1-AT is validated for parallel bus and low-speed USB 1.1 applications where this loading remains within acceptable eye-diagram margins. It is not recommended for HDMI or USB 3.0 interfaces due to excessive capacitive loading.

Can NNCD8.2C-T1-AT be used in automotive applications?

NNCD8.2C-T1-AT is classified as a Standard quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics-not automotive systems. It lacks AEC-Q200 qualification, extended temperature range validation (–40 °C to +125 °C), or automotive-specific reliability testing. For automotive infotainment or body-control modules, Renesas recommends qualified alternatives like the RCLAMP0524P or equivalent AEC-Q200-compliant TVS arrays instead of NNCD8.2C-T1-AT.

What is the surge reverse power rating of NNCD8.2C-T1-AT and how is it tested?

NNCD8.2C-T1-AT has a surge reverse power rating of 85 W, measured under non-repetitive conditions with a 10 µs pulse width (tT = 10 µs), as shown in Figure 6 of the datasheet. This rating reflects its ability to absorb single-event ESD energy without failure. The test simulates the peak power delivered during the initial 10 µs of an IEC 1000-4-2 30 kV contact discharge waveform. Engineers should note that repetitive surges require derating and thermal management beyond this single-pulse specification.