Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi NSPM0101MUT5G

Part No.:
NSPM0101MUT5G
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
2-UDFN
Datasheet:
AetrixNSPM0101MUT5G.pdf
Description:
TVS DIODE 10VWM 20VC 2UDFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,311

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NSPM0101MUT5G from onsemi is a unidirectional ESD protection diode in UDFN2 package, rated for ±30 kV IEC 61000−4−2 contact discharge, 60 A IEC 61000−4−5 lightning surge, and 10 V working reverse voltage, deployed to safeguard USB 2.0 data lines against electrostatic discharge events.

For engineers reviewing the NSPM0101MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 10 A (15 V) and 60 A (20 V), dynamic resistance (0.05 Ω), junction capacitance (400 pF), and UDFN2 footprint compatibility with high-speed signal integrity requirements.

Technical Context

This device operates as a single-channel, cathode-grounded unidirectional TVS diode, designed for low-capacitance transient suppression on I/O lines. Its clamping behavior is characterized by a 12 V breakdown voltage at 1 mA and a 20 V clamping voltage under 60 A 8/20 µs surge current.

The UDFN2 package enables direct placement adjacent to connectors without trace inductance penalty, while its 400 pF capacitance and 0.05 Ω dynamic resistance support signal integrity preservation for ≤480 Mbps USB 2.0 interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
Working Reverse Voltage10 V - Maximum continuous DC voltage applied across anode-to-cathode without leakage exceeding 0.5 µA
Breakdown Voltage12 V @ 1 mA - Voltage at which device transitions from high-impedance to conduction, defining ESD trigger threshold
Clamping Voltage20 V @ 60 A - Peak voltage seen by protected IC during full IEC 61000−4−5 lightning surge event
Junction Capacitance400 pF @ 0 V, 1 MHz - Measured capacitance that directly impacts signal rise time and insertion loss on high-speed lines
Dynamic Resistance0.05 Ω - Low incremental resistance during transient conduction, minimizing voltage overshoot beyond clamping level
ESD Rating±30 kV contact per IEC 61000−4−2 Level 4 - Confirmed immunity to worst-case human-body-model ESD events

Pinout & Package

NSPM0101MUT5G uses the UDFN2 (Case 517CZ) package: 1.6 mm × 1.0 mm, 0.5 mm pitch, 2-terminal surface-mount outline with exposed pad not connected internally. The package supports reflow soldering per J-STD-020 and is Pb-free, halogen-free, and RoHS compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Cathode)Ground reference terminalConnected to system ground plane; serves as return path for ESD current and defines unidirectional conduction direction
2 (Anode)Protected line terminalConnected to vulnerable I/O trace (e.g., USB D+); conducts transient current to ground when voltage exceeds VRWM

Key Features

FeatureDesign Value
IEC 61000−4−2 Level 4 compliance±30 kV contact discharge capability ensures robustness against real-world handling ESD in consumer electronics assembly and field use
Low dynamic resistance0.05 Ω limits voltage overshoot during fast-rising transients, reducing stress on downstream IC ESD structures
Controlled junction capacitance400 pF enables integration on USB 2.0 differential pairs without violating eye diagram mask requirements
UDFN2 footprint1.6 mm × 1.0 mm size allows placement within 2 mm of connector pins, minimizing PCB trace inductance and improving clamping efficacy

Applications

USB 2.0 Interface ProtectionMobile Device Charging Port

Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against user-handling ESD and cable-discharge events.

IC Role / Device Role: Unidirectional shunt clamp placed between each data line and ground, triggered only above 10 V reverse bias.

Use Value: Clamps to 15 V at 10 A and 20 V at 60 A, staying below the 24 V absolute maximum rating of most USB transceivers.

Use Scenario: Safeguarding micro-USB or USB-C receptacle pins in smartphones and tablets during plug/unplug cycles.

IC Role / Device Role: Single-channel ESD suppressor mounted directly at connector footprint, with cathode tied to chassis ground.

Use Value: 400 pF capacitance avoids signal degradation at 480 Mbps, while ±30 kV rating exceeds IEC 61000−4−2 Level 4 requirement for handheld devices.

Industrial Human-Machine InterfaceAutomotive Infotainment USB Port

Use Scenario: Securing front-panel USB ports on PLCs and HMIs exposed to factory-floor ESD risks.

IC Role / Device Role: Ground-referenced transient voltage suppressor on upstream-facing USB ports, operating over −40°C to +85°C ambient.

Use Value: −65°C to +150°C junction temperature range supports extended industrial thermal cycling without derating.

Use Scenario: Protecting USB media ports in automotive head units subject to ISO 10605 and IEC 61000−4−2 test conditions.

IC Role / Device Role: AEC-Q200–compatible ESD diode (per onsemi qualification) used on infotainment module PCBs.

Use Value: 60 A 8/20 µs surge rating meets ISO 10605 pulse requirements for vehicle-level ESD testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ESD9X5.0ST5G5.0 V VRWM, 12 V VBR, 14 V VC @ 1 A - lower clamping but higher capacitance (650 pF)Better suited for 3.3 V logic rails; less suitable for 5 V-tolerant USB 2.0 due to premature conductionSelect when protecting lower-voltage interfaces where tighter clamping margin is prioritized over bandwidth
CM1213A-04SO12 V VRWM, 15 V VBR, 25 V VC @ 60 A - higher clamping voltage, 300 pF capacitanceQuad-channel SOIC-8 package - occupies more board area, requires routing through package leadsChoose when multi-line protection is needed and layout space permits larger footprint with lead inductance penalty

Compared with ESD9X5.0ST5G and CM1213A-04SO, NSPM0101MUT5G delivers optimal balance of 10 V working voltage headroom, 20 V clamping at full lightning surge, and minimal 400 pF loading-making it preferred for compact, high-speed USB 2.0 implementations where board space and signal fidelity are constrained.

Availability

NSPM0101MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, mobile device charging port hardening, and industrial HMI front-panel safeguarding requiring stable component supply across production lifecycles.

Supply support for NSPM0101MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

NSPM0101MUT5G belongs to onsemi's ESD protection diode product line, engineered specifically for high-speed data line protection with low capacitance, precise clamping, and compact UDFN packaging to meet stringent IEC 61000−4−2 and IEC 61000−4−5 compliance requirements.

FAQ

What is the maximum clamping voltage of NSPM0101MUT5G under IEC 61000−4−5 surge conditions?

The NSPM0101MUT5G exhibits a clamping voltage of 20 V when subjected to a 60 A, 8/20 µs lightning surge per IEC 61000−4−5. This value is measured at the device terminals under standardized test conditions and represents the peak voltage imposed on the protected circuit during worst-case surge events. The NSPM0101MUT5G maintains this performance across its specified operating temperature range without derating.

Does NSPM0101MUT5G support bidirectional ESD protection?

No, NSPM0101MUT5G is a unidirectional ESD protection diode, configured with cathode grounded and anode connected to the protected line. It conducts only during negative transients relative to ground and blocks positive voltage up to 10 V. For bidirectional protection, two NSPM0101MUT5G devices may be used in series opposition, though this increases capacitance and footprint-alternatives like NUP4201MR6T1G are purpose-built for bidirectional operation.

What is the junction capacitance of NSPM0101MUT5G and how does it affect USB 2.0 signal integrity?

The NSPM0101MUT5G has a junction capacitance of 400 pF at 0 V and 1 MHz. This value is measured under small-signal AC conditions and directly impacts high-speed differential signaling: at 480 Mbps USB 2.0 data rates, 400 pF introduces minimal insertion loss and jitter when placed close to the connector. Layout best practices-such as symmetric trace routing and ground plane continuity-ensure the NSPM0101MUT5G maintains signal eye opening within USB specification limits.

Is NSPM0101MUT5G qualified to AEC-Q200 for automotive use?

Yes, NSPM0101MUT5G is AEC-Q200 qualified per onsemi's product documentation and qualification reports. It meets stress test requirements including temperature cycling, humidity bias, mechanical shock, and ESD robustness for passive components. While not an active IC, its qualification confirms suitability for automotive infotainment USB ports where ISO 10605 and IEC 61000−4−2 compliance are mandatory. The NSPM0101MUT5G operates reliably from −40°C to +125°C ambient.

How does the dynamic resistance of NSPM0101MUT5G influence its clamping performance?

The NSPM0101MUT5G features a dynamic resistance of 0.05 Ω, measured using 100 ns TLP pulses between I/O pin and ground. This low value minimizes voltage overshoot during rapid transient onset-ensuring the actual clamped voltage stays near the specified 20 V at 60 A rather than spiking significantly higher. As a result, the NSPM0101MUT5G provides predictable, repeatable protection for sensitive transceivers without requiring additional series impedance to limit diode current.

NSPM0101MUT5G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
2-UDFN
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10V (Max)
Voltage - Breakdown (Min):
12V
Voltage - Clamping (Max) @ Ipp:
20V
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
400pF @ 1MHz (Max)
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
2-UDFN (1.6x1)

NSPM0101MUT5G FAQ

1.How can I place an order for NSPM0101MUT5G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSPM0101MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSPM0101MUT5G reliable?

The price and inventory of NSPM0101MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPM0101MUT5G is usually 5 days.

3.What payment methods are accepted for NSPM0101MUT5G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPM0101MUT5G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSPM0101MUT5G?

NSPM0101MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSPM0101MUT5G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSPM0101MUT5G?

For technical support, including NSPM0101MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPM0101MUT5G requirements.

6.How does Aetrix verify that NSPM0101MUT5G is sourced from the original manufacturer or authorized distributors?

All NSPM0101MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPM0101MUT5G meets industry standards.

7.What is the process for return or replacement of NSPM0101MUT5G?

All NSPM0101MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with NSPM0101MUT5G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSPM0101MUT5G part is unused and in its original packaging.

Return procedure for NSPM0101MUT5G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NSPM0101MUT5G Tags

  • NSPM0101MUT5G
  • NSPM0101MUT5G PDF
  • NSPM0101MUT5G Datasheet
  • NSPM0101MUT5G Specifications
  • NSPM0101MUT5G Images
  • onsemi
  • onsemi NSPM0101MUT5G
  • Buy NSPM0101MUT5G
  • NSPM0101MUT5G Price
  • NSPM0101MUT5G Distributor
  • NSPM0101MUT5G Supplier
  • NSPM0101MUT5G Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER