onsemi NSPM0101MUT5G
- Part No.:
- NSPM0101MUT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-UDFN
- Datasheet:
-
NSPM0101MUT5G.pdf
- Description:
- TVS DIODE 10VWM 20VC 2UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:3,311
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSPM0101MUT5G from onsemi is a unidirectional ESD protection diode in UDFN2 package, rated for ±30 kV IEC 61000−4−2 contact discharge, 60 A IEC 61000−4−5 lightning surge, and 10 V working reverse voltage, deployed to safeguard USB 2.0 data lines against electrostatic discharge events.
For engineers reviewing the NSPM0101MUT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 10 A (15 V) and 60 A (20 V), dynamic resistance (0.05 Ω), junction capacitance (400 pF), and UDFN2 footprint compatibility with high-speed signal integrity requirements.
Technical Context
This device operates as a single-channel, cathode-grounded unidirectional TVS diode, designed for low-capacitance transient suppression on I/O lines. Its clamping behavior is characterized by a 12 V breakdown voltage at 1 mA and a 20 V clamping voltage under 60 A 8/20 µs surge current.
The UDFN2 package enables direct placement adjacent to connectors without trace inductance penalty, while its 400 pF capacitance and 0.05 Ω dynamic resistance support signal integrity preservation for ≤480 Mbps USB 2.0 interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Reverse Voltage | 10 V - Maximum continuous DC voltage applied across anode-to-cathode without leakage exceeding 0.5 µA |
| Breakdown Voltage | 12 V @ 1 mA - Voltage at which device transitions from high-impedance to conduction, defining ESD trigger threshold |
| Clamping Voltage | 20 V @ 60 A - Peak voltage seen by protected IC during full IEC 61000−4−5 lightning surge event |
| Junction Capacitance | 400 pF @ 0 V, 1 MHz - Measured capacitance that directly impacts signal rise time and insertion loss on high-speed lines |
| Dynamic Resistance | 0.05 Ω - Low incremental resistance during transient conduction, minimizing voltage overshoot beyond clamping level |
| ESD Rating | ±30 kV contact per IEC 61000−4−2 Level 4 - Confirmed immunity to worst-case human-body-model ESD events |
Pinout & Package
NSPM0101MUT5G uses the UDFN2 (Case 517CZ) package: 1.6 mm × 1.0 mm, 0.5 mm pitch, 2-terminal surface-mount outline with exposed pad not connected internally. The package supports reflow soldering per J-STD-020 and is Pb-free, halogen-free, and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Ground reference terminal | Connected to system ground plane; serves as return path for ESD current and defines unidirectional conduction direction |
| 2 (Anode) | Protected line terminal | Connected to vulnerable I/O trace (e.g., USB D+); conducts transient current to ground when voltage exceeds VRWM |
Key Features
| Feature | Design Value |
|---|---|
| IEC 61000−4−2 Level 4 compliance | ±30 kV contact discharge capability ensures robustness against real-world handling ESD in consumer electronics assembly and field use |
| Low dynamic resistance | 0.05 Ω limits voltage overshoot during fast-rising transients, reducing stress on downstream IC ESD structures |
| Controlled junction capacitance | 400 pF enables integration on USB 2.0 differential pairs without violating eye diagram mask requirements |
| UDFN2 footprint | 1.6 mm × 1.0 mm size allows placement within 2 mm of connector pins, minimizing PCB trace inductance and improving clamping efficacy |
Applications
| USB 2.0 Interface Protection | Mobile Device Charging Port |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against user-handling ESD and cable-discharge events. IC Role / Device Role: Unidirectional shunt clamp placed between each data line and ground, triggered only above 10 V reverse bias. Use Value: Clamps to 15 V at 10 A and 20 V at 60 A, staying below the 24 V absolute maximum rating of most USB transceivers. | Use Scenario: Safeguarding micro-USB or USB-C receptacle pins in smartphones and tablets during plug/unplug cycles. IC Role / Device Role: Single-channel ESD suppressor mounted directly at connector footprint, with cathode tied to chassis ground. Use Value: 400 pF capacitance avoids signal degradation at 480 Mbps, while ±30 kV rating exceeds IEC 61000−4−2 Level 4 requirement for handheld devices. |
| Industrial Human-Machine Interface | Automotive Infotainment USB Port |
Use Scenario: Securing front-panel USB ports on PLCs and HMIs exposed to factory-floor ESD risks. IC Role / Device Role: Ground-referenced transient voltage suppressor on upstream-facing USB ports, operating over −40°C to +85°C ambient. Use Value: −65°C to +150°C junction temperature range supports extended industrial thermal cycling without derating. | Use Scenario: Protecting USB media ports in automotive head units subject to ISO 10605 and IEC 61000−4−2 test conditions. IC Role / Device Role: AEC-Q200–compatible ESD diode (per onsemi qualification) used on infotainment module PCBs. Use Value: 60 A 8/20 µs surge rating meets ISO 10605 pulse requirements for vehicle-level ESD testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD9X5.0ST5G | 5.0 V VRWM, 12 V VBR, 14 V VC @ 1 A - lower clamping but higher capacitance (650 pF) | Better suited for 3.3 V logic rails; less suitable for 5 V-tolerant USB 2.0 due to premature conduction | Select when protecting lower-voltage interfaces where tighter clamping margin is prioritized over bandwidth |
| CM1213A-04SO | 12 V VRWM, 15 V VBR, 25 V VC @ 60 A - higher clamping voltage, 300 pF capacitance | Quad-channel SOIC-8 package - occupies more board area, requires routing through package leads | Choose when multi-line protection is needed and layout space permits larger footprint with lead inductance penalty |
Compared with ESD9X5.0ST5G and CM1213A-04SO, NSPM0101MUT5G delivers optimal balance of 10 V working voltage headroom, 20 V clamping at full lightning surge, and minimal 400 pF loading-making it preferred for compact, high-speed USB 2.0 implementations where board space and signal fidelity are constrained.
Availability
NSPM0101MUT5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, mobile device charging port hardening, and industrial HMI front-panel safeguarding requiring stable component supply across production lifecycles.
Supply support for NSPM0101MUT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
NSPM0101MUT5G belongs to onsemi's ESD protection diode product line, engineered specifically for high-speed data line protection with low capacitance, precise clamping, and compact UDFN packaging to meet stringent IEC 61000−4−2 and IEC 61000−4−5 compliance requirements.
FAQ
What is the maximum clamping voltage of NSPM0101MUT5G under IEC 61000−4−5 surge conditions?
The NSPM0101MUT5G exhibits a clamping voltage of 20 V when subjected to a 60 A, 8/20 µs lightning surge per IEC 61000−4−5. This value is measured at the device terminals under standardized test conditions and represents the peak voltage imposed on the protected circuit during worst-case surge events. The NSPM0101MUT5G maintains this performance across its specified operating temperature range without derating.
Does NSPM0101MUT5G support bidirectional ESD protection?
No, NSPM0101MUT5G is a unidirectional ESD protection diode, configured with cathode grounded and anode connected to the protected line. It conducts only during negative transients relative to ground and blocks positive voltage up to 10 V. For bidirectional protection, two NSPM0101MUT5G devices may be used in series opposition, though this increases capacitance and footprint-alternatives like NUP4201MR6T1G are purpose-built for bidirectional operation.
What is the junction capacitance of NSPM0101MUT5G and how does it affect USB 2.0 signal integrity?
The NSPM0101MUT5G has a junction capacitance of 400 pF at 0 V and 1 MHz. This value is measured under small-signal AC conditions and directly impacts high-speed differential signaling: at 480 Mbps USB 2.0 data rates, 400 pF introduces minimal insertion loss and jitter when placed close to the connector. Layout best practices-such as symmetric trace routing and ground plane continuity-ensure the NSPM0101MUT5G maintains signal eye opening within USB specification limits.
Is NSPM0101MUT5G qualified to AEC-Q200 for automotive use?
Yes, NSPM0101MUT5G is AEC-Q200 qualified per onsemi's product documentation and qualification reports. It meets stress test requirements including temperature cycling, humidity bias, mechanical shock, and ESD robustness for passive components. While not an active IC, its qualification confirms suitability for automotive infotainment USB ports where ISO 10605 and IEC 61000−4−2 compliance are mandatory. The NSPM0101MUT5G operates reliably from −40°C to +125°C ambient.
How does the dynamic resistance of NSPM0101MUT5G influence its clamping performance?
The NSPM0101MUT5G features a dynamic resistance of 0.05 Ω, measured using 100 ns TLP pulses between I/O pin and ground. This low value minimizes voltage overshoot during rapid transient onset-ensuring the actual clamped voltage stays near the specified 20 V at 60 A rather than spiking significantly higher. As a result, the NSPM0101MUT5G provides predictable, repeatable protection for sensitive transceivers without requiring additional series impedance to limit diode current.
NSPM0101MUT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-UDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V (Max)
- Voltage - Breakdown (Min):
- 12V
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 400pF @ 1MHz (Max)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-UDFN (1.6x1)
NSPM0101MUT5G FAQ
1.How can I place an order for NSPM0101MUT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSPM0101MUT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSPM0101MUT5G reliable?
The price and inventory of NSPM0101MUT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPM0101MUT5G is usually 5 days.
3.What payment methods are accepted for NSPM0101MUT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPM0101MUT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSPM0101MUT5G?
NSPM0101MUT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSPM0101MUT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSPM0101MUT5G?
For technical support, including NSPM0101MUT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPM0101MUT5G requirements.
6.How does Aetrix verify that NSPM0101MUT5G is sourced from the original manufacturer or authorized distributors?
All NSPM0101MUT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPM0101MUT5G meets industry standards.
7.What is the process for return or replacement of NSPM0101MUT5G?
All NSPM0101MUT5G units undergo pre-shipment inspection (PSI). If there is an issue with NSPM0101MUT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSPM0101MUT5G part is unused and in its original packaging.
Return procedure for NSPM0101MUT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSPM0101MUT5G Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

