onsemi NSPM1041MUTBG
- Part No.:
- NSPM1041MUTBG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-UDFN
- Datasheet:
-
NSPM1041MUTBG.pdf
- Description:
- SURGE PROTECTION, 4.8 V, 125 A E
- Quantity:
- Payment:

- Shipping:

Inventory:4,863
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Product details
Overview
NSPM1041MUTBG from onsemi is a bidirectional ESD protection diode in a 2-pin UDFN2 (2.0 × 1.25 mm) package, rated for ±30 kV IEC 61000−4−2 contact discharge, 125 A IEC 61000−4−5 lightning surge, and featuring 480 pF junction capacitance at 0 V. It provides low clamping voltage (10.8 V @ 125 A) and asymmetric reverse working voltages (3.3 V pin1→pin2 / 4.8 V pin2→pin1), designed for high-speed data line protection in USB 2.0, HDMI, and audio interfaces.
For engineers reviewing the NSPM1041MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include its bidirectional clamping behavior, polarity-independent layout compatibility, asymmetric VRWM tolerance per direction, and ultra-low dynamic resistance (0.018–0.022 Ω) critical for preserving signal integrity in compact portable electronics.
Technical Context
This device implements a symmetric dual-diode topology in a single UDFN2 die, enabling bidirectional transient suppression without external polarity constraints. Its asymmetric electrical ratings-3.3 V VRWM (P1→P2) vs. 4.8 V VRWM (P2→P1)-reflect optimized breakdown thresholds for differential signaling paths where one side connects to a lower-voltage rail.
The clamping response is characterized across multiple pulse regimes: TLP (8/100 ns), IEC 61000−4−2 (0.7–1 ns rise), and IEC 61000−4−5 (8/20 μs), with VC ranging from 5.6 V (1 A) to 10.8 V (125 A). Dynamic resistance is measured separately for each conduction direction using TLP, confirming sub-25 mΩ conduction efficiency under ESD stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | ±30 kV contact discharge per IEC 61000−4−2 Level 4 - ensures robustness against direct human-body ESD events in handheld devices. |
| Peak Pulse Current | 125 A @ 8/20 μs per IEC 61000−4−5 - supports lightning surge immunity in unshielded interface lines. |
| Clamping Voltage | 10.8 V @ 125 A - limits downstream IC voltage stress to safe levels during worst-case surge conditions. |
| Junction Capacitance | 480 pF @ 0 V, 1 MHz - compatible with USB 2.0 (480 Mbps) and analog audio lines; not suitable for USB 3.x or PCIe. |
| Reverse Working Voltage | 3.3 V (P1→P2) / 4.8 V (P2→P1) - enables asymmetric biasing for differential pairs tied to different supply domains. |
| Dynamic Resistance | 0.018 Ω (P2→P1) / 0.022 Ω (P1→P2) - minimizes voltage overshoot during fast-rising ESD transients. |
Pinout & Package
NSPM1041MUTBG uses the UDFN2 (Case 517DF) package: 2.0 mm × 1.25 mm footprint, 0.45–0.55 mm height, 1.3 mm pin pitch, no exposed thermal pad. Pin 1 is marked by a cathode band on top surface; polarity is functional but not mandatory due to bidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode (for P1→P2 conduction) | Serves as the anode when current flows from Pin 2; defines reference point for asymmetric VRWM rating of 3.3 V in that direction. |
| Pin 2 | Anode (for P2→P1 conduction) | Serves as the cathode when current flows from Pin 1; enables 4.8 V VRWM tolerance in the reverse direction, supporting higher-voltage data lanes. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD Clamping | Enables placement on any differential or single-ended line without orientation constraints - reduces BOM count and layout complexity. |
| Asymmetric VRWM Ratings | 3.3 V / 4.8 V directional hold-off allows integration into mixed-supply interfaces (e.g., USB D+ tied to 3.3 V, D− tied to 4.8 V rail). |
| Low Dynamic Resistance | Sub-22 mΩ conduction minimizes I×R voltage overshoot during nanosecond-scale ESD pulses, improving clamping precision. |
| Pb-Free, Halogen-Free | RoHS-compliant construction meets global environmental regulations and reflow soldering requirements (JEDEC J-STD-020). |
Applications
| USB 2.0 Data Lines | HDMI TMDS Channels |
|---|---|
Use Scenario: Protecting D+ and D− pins of USB 2.0 transceivers in smartphones and tablets from repeated ESD exposure during cable insertion. IC Role / Device Role / Timing Role: Bidirectional shunt clamp placed directly at connector, diverting ESD current before it reaches the PHY. Use Value: 480 pF capacitance preserves signal rise/fall times required for 480 Mbps operation while clamping to ≤10.8 V under 125 A surge. | Use Scenario: Safeguarding TMDS clock and data channels in HDMI source devices (e.g., set-top boxes) against contact discharge near ports. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted adjacent to HDMI receptacle, operating in parallel with 50 Ω transmission lines. Use Value: Asymmetric VRWM (4.8 V) accommodates TMDS common-mode voltage swing up to 3.3 V, preventing false triggering during normal operation. |
| Smartphone Audio Jacks | Industrial Sensor Interfaces |
Use Scenario: ESD protection for 3.5 mm TRRS audio jack mic and ground lines exposed to frequent handling in consumer handsets. IC Role / Device Role / Timing Role: Dual-directional clamp isolating analog audio paths from system ground during ±8 kV air discharge events. Use Value: 5.6 V clamping at 1 A (IEC 61000−4−2 Level 2 equivalent) prevents op-amp input saturation and audible pop artifacts. | Use Scenario: Shielding RS-485 or CAN FD transceiver inputs in factory automation equipment from cable-induced surges in noisy environments. IC Role / Device Role / Timing Role: Front-end transient suppressor on twisted-pair lines, absorbing energy before it couples into differential receivers. Use Value: 125 A peak pulse rating matches IEC 61000−4−5 severity Level 3, ensuring survivability during 2 kV line-to-ground surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z3.3T5G | Symmetric VRWM = 3.3 V; higher CJ = 650 pF; same UDFN2 package. | Limited to 3.3 V systems only; less suitable for mixed-rail interfaces. | Select when strict 3.3 V hold-off and legacy design reuse are priorities over asymmetric flexibility. |
| TPD2E001DRYR | Unidirectional; VRWM = 5.5 V; CJ = 12 pF; SOT-5X3 package (larger footprint). | Requires orientation-aware layout; superior for high-speed digital lines needing <15 pF capacitance. | Choose for USB 3.2 Gen 1 or MIPI D-PHY where ultra-low capacitance outweighs bidirectionality. |
Compared with ESD5Z3.3T5G and TPD2E001DRYR, NSPM1041MUTBG uniquely balances asymmetric voltage tolerance, moderate capacitance, and orientation-free placement-making it optimal for cost-sensitive, space-constrained USB 2.0 and analog interface designs where mixed supply rails exist.
Availability
NSPM1041MUTBG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI TMDS channel safeguarding, and smartphone audio jack ESD hardening requiring stable component supply across high-volume consumer electronics production.
Supply support for NSPM1041MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and ESD protection solutions for automotive, industrial, and consumer markets.
The NSPM1041MUTBG belongs to onsemi's ESD protection diode family engineered specifically for high-density portable electronics, emphasizing low-profile packaging, precise clamping control, and compliance with stringent IEC 61000−4−2/−5 standards.
FAQ
What is the maximum clamping voltage of NSPM1041MUTBG under full-rated surge current?
The NSPM1041MUTBG exhibits a maximum clamping voltage of 10.8 V when subjected to a 125 A, 8/20 μs pulse per IEC 61000−4−5. This value is measured across the device terminals with specified test conditions (TA = 25°C, pin 2 to pin 1), and represents the peak voltage seen by protected circuitry during worst-case lightning-surge events. NSPM1041MUTBG maintains this performance consistently due to its low dynamic resistance and thermally stable silicon structure.
Is NSPM1041MUTBG suitable for USB 3.0 or higher-speed interfaces?
No, NSPM1041MUTBG is not recommended for USB 3.0 (5 Gbps), USB 3.1, or PCIe applications due to its 480 pF junction capacitance, which would severely degrade signal integrity at multi-GHz frequencies. It is validated for USB 2.0 (480 Mbps), HDMI 1.4 TMDS (up to 3.4 Gbps with margin), and analog audio lines. For USB 3.x, lower-capacitance alternatives like NSPM3011MUTBG (12 pF) should be considered instead of NSPM1041MUTBG.
Does NSPM1041MUTBG require specific PCB layout considerations for thermal performance?
NSPM1041MUTBG does not require thermal vias or copper pours for ESD pulse handling, as energy dissipation occurs in nanoseconds and junction temperature rise is negligible. However, short, direct traces (<3 mm) from connector to device pins are essential to minimize inductance and preserve clamping speed. The UDFN2 package has no thermal pad; standard reflow profiles per JEDEC J-STD-020 apply. NSPM1041MUTBG performance is unaffected by typical PCB copper thicknesses used in consumer PCBs.
How does the asymmetric VRWM rating of NSPM1041MUTBG affect circuit design?
The asymmetric VRWM (3.3 V pin1→pin2 / 4.8 V pin2→pin1) allows NSPM1041MUTBG to protect differential signals referenced to different supply domains-for example, one line tied to a 3.3 V I/O rail and the other to a 5 V auxiliary rail. This eliminates the need for two separate diodes or voltage-level shifting. Designers must orient NSPM1041MUTBG so Pin 1 connects to the lower-voltage node to avoid premature conduction; correct placement ensures NSPM1041MUTBG remains non-conductive during normal operation.
Can NSPM1041MUTBG replace unidirectional ESD diodes in existing designs?
NSPM1041MUTBG can replace unidirectional diodes only if the original design relies on bidirectional protection or if both polarities are independently safeguarded. Its bidirectional nature means it conducts during both positive and negative transients, unlike unidirectional parts that clamp only one polarity. Substituting NSPM1041MUTBG for a unidirectional device may alter leakage paths or bias points; validation of DC operating point and transient response is required. NSPM1041MUTBG is not a drop-in replacement unless the schematic and layout explicitly accommodate bidirectional conduction.
NSPM1041MUTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-UDFN
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 4.5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 1350W (1.35kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-UDFN (2x1.25)
NSPM1041MUTBG FAQ
1.How can I place an order for NSPM1041MUTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSPM1041MUTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSPM1041MUTBG reliable?
The price and inventory of NSPM1041MUTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPM1041MUTBG is usually 5 days.
3.What payment methods are accepted for NSPM1041MUTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPM1041MUTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSPM1041MUTBG?
NSPM1041MUTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSPM1041MUTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSPM1041MUTBG?
For technical support, including NSPM1041MUTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPM1041MUTBG requirements.
6.How does Aetrix verify that NSPM1041MUTBG is sourced from the original manufacturer or authorized distributors?
All NSPM1041MUTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPM1041MUTBG meets industry standards.
7.What is the process for return or replacement of NSPM1041MUTBG?
All NSPM1041MUTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSPM1041MUTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSPM1041MUTBG part is unused and in its original packaging.
Return procedure for NSPM1041MUTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSPM1041MUTBG Tags

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ESD5Z3.3T1G
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ESD5Z5.0T1G
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D12V0L1B2LP-7B
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PESD2V0Y1BSFYL
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