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onsemi NSPM3042MXT5G
- Part No.:
- NSPM3042MXT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-XDFN
- Datasheet:
-
NSPM3042MXT5G.pdf
- Description:
- TVS DIODE 4.8VWM 8VC 2X2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,589
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Product details
Overview
NSPM3042MXT5G from onsemi is a bidirectional ESD and surge protection diode designed for I/O line protection in portable electronics. It delivers 4.8 V working reverse voltage, ±30 kV IEC61000−4−2 contact ESD immunity, 43 A peak pulse current handling (8/20 µs), 5.74 V clamping at 16 A TLP, and 80–200 pF junction capacitance - enabling robust, low-capacitance protection for high-speed audio, battery, and GPIO lines.
For engineers reviewing the NSPM3042MXT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under IEC61000−4−2 Level 4, dynamic resistance (0.03 Ω), leakage current (<0.5 µA), package footprint (1.0 mm × 0.6 mm X2DFN2), and bidirectional symmetry for unidirectional signal lines with ground-referenced transients.
Technical Context
The NSPM3042MXT5G employs a monolithic dual-diode architecture configured in back-to-back orientation across Pins 1 and 2, enabling symmetrical bidirectional clamping without polarity dependency. Its low dynamic resistance (0.03 Ω) and fast response time ensure sub-100 ns turn-on during ESD events, maintaining clamping voltage below 5.74 V even at 16 A TLP stress.
It meets IEC61000−4−5 lightning surge immunity (43 A, 8/20 µs) and IEC61000−4−2 Level 4 (±30 kV contact), with breakdown voltage specified at 4.85–6.0 V (Pin 1→2) and 4.55–6.0 V (Pin 2→1) at 1 mA test current - confirming tight voltage matching for balanced transient suppression on differential or single-ended interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 4.8 V (Pin 1–2) / 4.5 V (Pin 2–1): Maximum continuous DC bias before leakage rise or conduction onset. |
| Clamping Voltage | 5.74 V @ 16 A TLP: Peak voltage seen by protected IC during IEC61000−4−2 Level 4-equivalent stress. |
| Peak Pulse Current | 43 A (8/20 µs): Sustains lightning-surge-level energy without failure per IEC61000−4−5. |
| Junction Capacitance | 80–200 pF @ 0 V, 1 MHz: Low enough for USB 2.0, audio codecs, and SDIO without signal integrity loss. |
| Dynamic Resistance | 0.03 Ω: Enables sharp voltage limiting and minimal IR drop during high-current transients. |
| ESD Rating | ±30 kV contact (IEC61000−4−2 Level 4): Highest system-level ESD immunity class for handheld device interfaces. |
| Leakage Current | <0.5 µA @ VRWM: Prevents battery drain in always-on portable applications like headset detection or battery monitoring. |
Pinout & Package
NSPM3042MXT5G is housed in the X2DFN2 package (Case 714AB), measuring 1.00 mm × 0.60 mm × 0.37 mm with 0.65 mm pitch and bottom-side thermal pad. This ultra-compact, leadless, surface-mount package supports high-density PCB layouts and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode D1 / Cathode of Diode D2 | Common node for bidirectional clamping path to GND; connects to protected I/O line. |
| Pin 2 | Cathode of Diode D1 / Anode of Diode D2 | Second terminal of symmetrical dual-diode structure; ties to system ground or reference plane. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional Clamping | Enables single-device protection of AC-coupled or ground-referenced lines without polarity constraints. |
| Low Dynamic Resistance | 0.03 Ω ensures minimal voltage overshoot during fast-rising ESD pulses (e.g., <1 ns rise time). |
| Sub-1 mm Footprint | 1.0 mm × 0.6 mm X2DFN2 saves >60% board area vs. SOT-23, critical for slim smartphones and wearables. |
| IEC61000−4−5 Compliance | 43 A (8/20 µs) rating allows direct integration into power rail or interface lines exposed to lightning-induced surges. |
| Pb-Free & RoHS Compliant | Meets global environmental regulations and supports lead-free reflow profiles up to 260°C. |
Applications
| Battery Line Protection | Audio Line Protection |
|---|---|
Use Scenario: Protecting lithium-ion battery monitor pins (e.g., fuel gauge sense lines) from user-handling ESD during charging or cable insertion. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between battery sense trace and system ground. Use Value: Limits clamping voltage to ≤5.74 V at 16 A, preventing latch-up or oxide damage in precision analog battery monitors. | Use Scenario: Shielding stereo headphone jack signals (L/R/GND) in smartphones against repeated plug/unplug ESD events. IC Role / Device Role / Timing Role: Low-capacitance (80–200 pF) ESD clamp on each audio channel, referenced to common ground. Use Value: Maintains audio bandwidth (>20 kHz) while suppressing ±30 kV contact discharges without audible pop or distortion. |
| GPIO Protection | USB Data Line Protection |
Use Scenario: Safeguarding microcontroller GPIOs connected to buttons, sensors, or external switches in IoT edge nodes. IC Role / Device Role / Timing Role: Standalone ESD shunt on each GPIO net, operating within 4.8 V working range and <0.5 µA leakage. Use Value: Prevents firmware lockup or reset due to ESD-induced logic upset, with no impact on sleep-mode current budget. | Use Scenario: Adding secondary ESD protection on USB 2.0 D+ and D− lines downstream of integrated PHY ESD structures. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp placed between connector and USB transceiver I/O pins. Use Value: Adds system-level margin beyond internal PHY protection, meeting IEC61000−4−2 Level 4 without degrading 480 Mbps eye diagram. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SP1001-01UTG | Unidirectional; 5.0 V VRWM; 12 A IPP; 110 pF CJ; SOD-523 package (1.3 × 0.85 mm) | Limited to positive-only transients; larger footprint; lower surge rating | Select when only unidirectional protection is needed and board space permits larger package. |
| ESD9X5.0ST5G | Bidirectional; 5.0 V VRWM; 4 A IPP; 45 pF CJ; SOD-923 package (1.0 × 0.6 mm) | Lower surge capability (4 A vs. 43 A); optimized for ultra-low capacitance, not lightning-level surges | Prefer for high-frequency RF or MIPI lines where <50 pF is mandatory and IEC61000−4−5 compliance is not required. |
Compared with SP1001-01UTG and ESD9X5.0ST5G, the NSPM3042MXT5G uniquely combines bidirectional operation, 43 A surge rating, and X2DFN2 footprint - making it the only option among the three qualified for both IEC61000−4−2 Level 4 and IEC61000−4−5 lightning immunity in space-constrained portable designs.
Availability
NSPM3042MXT5G is available at Aetrix Electronics and suitable for battery management systems, mobile audio subsystems, industrial HMI GPIO interfaces, and USB peripheral protection requiring stable component supply and full IEC61000−4−2/−5 compliance.
Supply support for NSPM3042MXT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and portable electronics.
The NSPM3042MXT5G belongs to onsemi's ESD protection portfolio, engineered specifically for ultra-compact, high-reliability transient suppression in battery-powered consumer devices where board area, leakage, and clamping performance are simultaneously constrained.
FAQ
What is the maximum working voltage supported by the NSPM3042MXT5G?
The NSPM3042MXT5G supports a maximum reverse working voltage (VRWM) of 4.8 V from Pin 1 to Pin 2 and 4.5 V from Pin 2 to Pin 1 at 25°C. This rating defines the highest continuous DC voltage that can be applied across the device without triggering significant leakage or conduction - ensuring compatibility with 3.3 V and 4.2 V battery-supplied I/O rails in portable electronics. Exceeding VRWM risks premature conduction and increased power loss in the NSPM3042MXT5G.
Does the NSPM3042MXT5G meet IEC61000−4−5 lightning surge requirements?
Yes, the NSPM3042MXT5G is rated for 43 A peak pulse current under the IEC61000−4−5 8/20 µs waveform, fully complying with Level 4 lightning surge immunity. This specification is validated per Figure 14 in the official datasheet and enables direct placement on power inputs, antenna feeds, or external connectors exposed to induced surges. The NSPM3042MXT5G's low dynamic resistance (0.03 Ω) ensures stable clamping behavior even under this high-energy stress condition.
What is the junction capacitance range of the NSPM3042MXT5G and how does it affect high-speed signal lines?
The NSPM3042MXT5G exhibits a junction capacitance (CJ) of 80–200 pF at 0 V bias and 1 MHz, as specified in the Electrical Characteristics table. This range is optimized for audio, SDIO, and low-speed USB 2.0 interfaces - where signal integrity remains intact up to ~20 MHz. For higher-speed lines (e.g., USB HS, MIPI), designers should verify eye diagram margins; the NSPM3042MXT5G may require layout optimization or supplemental low-CJ protection depending on trace length and data rate.
Is the NSPM3042MXT5G compatible with lead-free reflow soldering processes?
Yes, the NSPM3042MXT5G is Pb-free, halogen-free/BFR-free, and RoHS-compliant, qualified for standard lead-free reflow profiles with peak temperatures up to 260°C. Its X2DFN2 package (Case 714AB) is designed for compatibility with Type III (J-STD-020) moisture sensitivity level (MSL) handling and supports automated pick-and-place and reflow assembly without delamination or solder joint reliability issues. Full process guidance is documented in onsemi's BRD8011/D tape-and-reel specification.
How does the bidirectional architecture of the NSPM3042MXT5G improve protection compared to unidirectional ESD diodes?
The NSPM3042MXT5G uses a monolithic back-to-back diode structure that provides symmetrical clamping for both positive and negative transients - eliminating the need to determine signal polarity during layout. Unlike unidirectional diodes, it protects AC-coupled lines (e.g., audio, USB differential pairs) without risk of forward conduction during normal operation. This architecture ensures consistent ≤5.74 V clamping under ±8 kV TLP stress in either direction, directly enhancing system-level ESD robustness in the NSPM3042MXT5G.
NSPM3042MXT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-XDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 4.8V (Max)
- Voltage - Breakdown (Min):
- 4.85V
- Voltage - Clamping (Max) @ Ipp:
- 8V
- Current - Peak Pulse (10/1000µs):
- 43A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 80pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-X2DFN (1x0.6)
NSPM3042MXT5G FAQ
1.How can I place an order for NSPM3042MXT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSPM3042MXT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSPM3042MXT5G reliable?
The price and inventory of NSPM3042MXT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPM3042MXT5G is usually 5 days.
3.What payment methods are accepted for NSPM3042MXT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPM3042MXT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSPM3042MXT5G?
NSPM3042MXT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSPM3042MXT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSPM3042MXT5G?
For technical support, including NSPM3042MXT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPM3042MXT5G requirements.
6.How does Aetrix verify that NSPM3042MXT5G is sourced from the original manufacturer or authorized distributors?
All NSPM3042MXT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPM3042MXT5G meets industry standards.
7.What is the process for return or replacement of NSPM3042MXT5G?
All NSPM3042MXT5G units undergo pre-shipment inspection (PSI). If there is an issue with NSPM3042MXT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSPM3042MXT5G part is unused and in its original packaging.
Return procedure for NSPM3042MXT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSPM3042MXT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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