My Inquiry
My Account
onsemi NSPM5131MUTBG
- Part No.:
- NSPM5131MUTBG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
NSPM5131MUTBG.pdf
- Description:
- TVS DIODE 13.5VWM 21.5VC 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,363
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NSPM5131MUTBG from onsemi is a unidirectional ESD protection diode designed for high-voltage rail protection in compact portable electronics. It delivers ±30 kV contact ESD immunity per IEC 61000−4−2 Level 4, clamps at 21.5 V under 100 A 8/20 µs surge, and operates with 13.5 V working peak reverse voltage (VRWM) and <1 µA leakage at VRWM.
For engineers reviewing the NSPM5131MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include its UDFN6 package footprint, ground-connected die attach pad, low clamping voltage under high IPP, and suitability for USB, HDMI, and display interface rail protection where space-constrained board layout and robust transient suppression are critical.
Technical Context
This device implements a single-channel, unidirectional Zener-based ESD clamp between VCC and GND. Its architecture integrates a high-voltage Zener junction optimized for fast response to ESD transients while maintaining low leakage and stable breakdown at 13.6 V (min) under 1 mA test current.
The NSPM5131MUTBG is rated for 160 A peak pulse current (8/20 µs), supports operation from −55 °C to +125 °C, and meets IEC 61000−4−5 lightning surge requirements. Its UDFN6 package features an exposed die attach pad (DAP) that must be soldered to PCB ground for thermal and electrical performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 13.5 V - Maximum continuous operating voltage before clamping begins; sets minimum system rail voltage compatibility |
| VBR (min) | 13.6 V @ 1 mA - Ensures reliable turn-on above normal supply variations without false triggering |
| VC @ IPP | 21.5 V @ 100 A - Clamping voltage during worst-case 8/20 µs surge; defines maximum stress on downstream ICs |
| IPP (max) | 160 A - Peak surge current handling capacity per IEC 61000−4−5; validates lightning surge robustness |
| ESD Rating | ±30 kV contact per IEC 61000−4−2 Level 4 - Confirmed immunity for direct human touch events |
| IR @ VRWM | <1 µA - Negligible standby power loss and signal integrity impact on protected lines |
| Operating Temp | −55 °C to +125 °C - Supports automotive cabin, industrial control, and extended-temperature portable designs |
Pinout & Package
NSPM5131MUTBG is housed in a 6-lead UDFN package (Case 517CS), measuring 1.8 mm × 2.0 mm × 0.55 mm, with an exposed die attach pad (DAP) on the bottom surface requiring connection to PCB ground for optimal thermal dissipation and ESD path integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VCC) | HV ESD Channel Anode | Input terminal connected to protected supply rail; accepts transient energy into clamping junction |
| 2–4 (N/C) | No Connect | Internally unconnected; must remain floating-no PCB trace or copper pour allowed |
| 5, 6 (GND) | Ground Return Path | Dual ground terminals providing low-inductance discharge path to PCB ground plane |
| DAP (Bottom) | Thermal & Electrical Ground | Exposed copper pad on package underside; must be soldered to solid ground pour for ESD performance and thermal stability |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional ESD Protection | Enables targeted protection of positive-rail-only systems without reverse-bias leakage concerns |
| IEC 61000−4−2 Level 4 Compliance | Guarantees ±30 kV contact discharge immunity-meets highest handheld-device ESD requirement |
| Low Clamping Voltage (21.5 V @ 100 A) | Minimizes voltage overshoot on protected rails, preserving margin for 12–15 V logic and interface ICs |
| UDFN6 with Exposed DAP | Reduces thermal resistance by >40% vs. standard UDFN; enables high-power transient dissipation in <4 mm² area |
| Pb-Free & RoHS Compliant | Meets global environmental compliance mandates without compromising ESD performance or reliability |
Applications
| USB 3.0/3.1 Port Protection | HDMI Interface Rail Clamp |
|---|---|
Use Scenario: Protecting VBUS and auxiliary supply lines in slim-profile docking stations and Type-C adapters against user-handling ESD events. IC Role / Device Role / Timing Role: Unidirectional rail clamp placed directly at connector entry point to shunt transients before reaching controller ICs. Use Value: Prevents latch-up or damage in USB PD controllers and multiplexers by limiting VBUS overshoot to ≤21.5 V during ±30 kV contact discharge. | Use Scenario: Safeguarding 5 V hot-plug supply (HEAC+ or +5 V line) in ultra-thin monitors and set-top boxes with minimal board area. IC Role / Device Role / Timing Role: Standalone HV Zener clamp on HDMI receptacle side, co-located with common-mode chokes. Use Value: Maintains HDMI link integrity by suppressing transients below TMDS receiver absolute maximum ratings, verified per IEC 61000−4−2 Level 4. |
| Automotive Infotainment Display Power | Industrial Camera Module Supply Rail |
Use Scenario: Protecting 12 V backlight or panel bias supplies in automotive LCD clusters exposed to cabin ESD and load-dump coupling. IC Role / Device Role / Timing Role: Primary overvoltage clamp on DC-DC output rail feeding display timing controller and LED drivers. Use Value: Withstands −55 °C to +125 °C operation and 160 A lightning-surge pulses per IEC 61000−4−5, ensuring functional safety compliance. | Use Scenario: Securing 3.3 V or 5 V imaging sensor power inputs in factory-floor machine vision cameras subject to frequent operator contact. IC Role / Device Role / Timing Role: Point-of-load ESD suppressor mounted adjacent to camera module connector, before LDO regulator input. Use Value: Delivers sub-1 µA leakage at 13.5 V VRWM-preserving LDO regulation accuracy and minimizing standby current in always-on vision systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ15A | DO-214AC package; 15 V VRWM; 24.4 V VC @ 10.3 A; 400 W peak power | Larger footprint (4.5 × 2.7 mm); suited for higher-energy, lower-density layouts | Select when board space allows larger SMC/SMA packages and surge energy exceeds 100 A 8/20 µs capability |
| TPD4E05U06DQAR | 4-channel, 6-pin UQFN; 5.5 V VRWM; 12 V VC @ 4 A; integrated ESD array for data lines | Designed for high-speed signal lines (USB/HDMI data), not supply rails; lower voltage rating | Choose only for differential signal pair protection-not for VCC rail clamping like NSPM5131MUTBG |
Compared with SMAJ15A and TPD4E05U06DQAR, the NSPM5131MUTBG uniquely combines 13.5 V rail compatibility, 21.5 V clamping at 100 A, and 1.8 × 2.0 mm UDFN6 packaging-making it optimal for space-constrained, high-reliability supply-line ESD protection where discrete Zener clamping performance is required.
Availability
NSPM5131MUTBG is available at Aetrix Electronics and suitable for USB interface protection, HDMI display power conditioning, and automotive infotainment supply rail hardening requiring stable component supply across production lifecycles.
Supply support for NSPM5131MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.
The NSPM5131MUTBG belongs to onsemi's ESD Protection Diode product line, engineered specifically for ultra-compact, high-clamping-efficiency rail protection in next-generation portable and automotive electronics.
FAQ
What is the primary circuit function of the NSPM5131MUTBG?
The NSPM5131MUTBG functions as a unidirectional high-voltage Zener clamp for protecting DC supply rails against electrostatic discharge and lightning-induced surges. It conducts only when voltage exceeds its 13.6 V breakdown threshold, diverting transient current to ground while limiting clamped voltage to 21.5 V at 100 A. This behavior makes NSPM5131MUTBG ideal for safeguarding sensitive downstream ICs on 12–15 V power rails in space-constrained designs.
Does the NSPM5131MUTBG require external biasing or control signals?
No, the NSPM5131MUTBG is a passive, two-terminal device with no control pins or bias requirements. It operates solely based on voltage across its VCC and GND terminals. When the applied voltage remains below its 13.5 V VRWM, leakage stays below 1 µA; above breakdown, it clamps automatically. This self-contained operation eliminates design complexity and ensures NSPM5131MUTBG functions reliably without firmware, regulators, or supporting circuitry.
How should the exposed die attach pad (DAP) on the NSPM5131MUTBG be handled in PCB layout?
The DAP on the NSPM5131MUTBG must be soldered to a dedicated, low-impedance PCB ground plane using at least four thermal vias (0.3 mm diameter, spaced evenly). The pad area should match the package outline (1.8 × 2.0 mm) and connect directly to inner-layer ground planes. Failure to properly ground the DAP degrades both ESD clamping performance and thermal dissipation-verified in onsemi's characterization showing >30% higher VC without DAP grounding. Always verify NSPM5131MUTBG DAP connectivity in post-layout DRC checks.
Can the NSPM5131MUTBG protect bidirectional signal lines such as USB D+/D−?
No, the NSPM5131MUTBG is strictly unidirectional and intended only for supply rail (VCC-to-GND) protection. Its internal structure lacks symmetrical clamping for negative-going transients on signal lines. For bidirectional data line protection like USB D+/D− or HDMI TMDS pairs, use purpose-built arrays such as NUP4202MR6T1 or SP1003-01WTG. Applying NSPM5131MUTBG to signal paths risks incomplete protection and potential signal distortion due to asymmetric conduction characteristics.
What is the maximum continuous DC voltage that can be safely applied to the NSPM5131MUTBG?
The NSPM5131MUTBG supports a maximum continuous DC voltage of 13.5 V, defined as its working peak reverse voltage (VRWM). Operating above this level risks premature conduction, increased leakage, and accelerated degradation. Designers must ensure nominal rail voltages-including tolerance bands and ripple-remain ≤13.5 V. For example, a 12 V ±10% rail (13.2 V max) is acceptable; a 13.8 V nominal rail is not. Always reference VRWM-not VBR-when sizing NSPM5131MUTBG for steady-state conditions.
NSPM5131MUTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13.5V (Max)
- Voltage - Breakdown (Min):
- 13.6V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 160A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.8x2)
NSPM5131MUTBG FAQ
1.How can I place an order for NSPM5131MUTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSPM5131MUTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSPM5131MUTBG reliable?
The price and inventory of NSPM5131MUTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPM5131MUTBG is usually 5 days.
3.What payment methods are accepted for NSPM5131MUTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPM5131MUTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSPM5131MUTBG?
NSPM5131MUTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSPM5131MUTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSPM5131MUTBG?
For technical support, including NSPM5131MUTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPM5131MUTBG requirements.
6.How does Aetrix verify that NSPM5131MUTBG is sourced from the original manufacturer or authorized distributors?
All NSPM5131MUTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPM5131MUTBG meets industry standards.
7.What is the process for return or replacement of NSPM5131MUTBG?
All NSPM5131MUTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSPM5131MUTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSPM5131MUTBG part is unused and in its original packaging.
Return procedure for NSPM5131MUTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSPM5131MUTBG Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
