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onsemi NSPM6201MUTBG
- Part No.:
- NSPM6201MUTBG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 3-PowerUDFN
- Datasheet:
-
NSPM6201MUTBG.pdf
- Description:
- 20 V BIDIRECTIONAL VBUS
- Quantity:
- Payment:
- Shipping:
Inventory:5,112
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Product details
Overview
NSPM6201MUTBG from onsemi is a bi-directional ESD and surge protection diode in a 3-pin UDFN3 (2.0 × 2.0 mm) package, rated for ±30 kV IEC 61000−4−2 contact discharge, 100 A (8/20 µs) IEC 61000−4−5 lightning surge, and 20 V working reverse voltage - deployed to safeguard high-speed USB, HDMI, and MIPI data lines in portable electronics.
For engineers reviewing the NSPM6201MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at 100 A (≤39 V), dynamic resistance (0.057 Ω), junction capacitance (320–400 pF), bi-directional I/O-to-GND architecture, and RoHS-compliant Pb-free UDFN3 packaging.
Technical Context
The NSPM6201MUTBG implements a symmetric bi-directional TVS structure between pins 1/2 (I/O) and pin 3 (GND), enabling equal clamping in both polarities during ESD transients. Its low dynamic resistance (0.057 Ω) and sub-40 V clamping at 100 A support robust protection of 1.8 V/3.3 V interface ICs without signal distortion.
It is characterized using Transmission Line Pulse (TLP) testing per ANSI/ESD STM5.5.1, with validated I–V curves at 100 ns pulse width, and meets IEC 61000−4−2 Level 4 (±30 kV contact) and IEC 61000−4−5 (100 A, 8/20 µs) standards - confirming suitability for front-end port protection in consumer and industrial edge devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Reverse Voltage | 20 V - defines maximum continuous DC bias across I/O-to-GND without leakage degradation |
| Breakdown Voltage | 21–27 V @ 1 mA - ensures reliable turn-on before sensitive interface ICs exceed absolute max ratings |
| Clamping Voltage | 36–39 V @ 100 A, 8/20 µs - limits transient overvoltage seen by downstream PHY or controller |
| Junction Capacitance | 320–400 pF @ 0 V, 1 MHz - impacts signal integrity on ≤480 Mbps USB 2.0 or 1.5 Gbps MIPI D-PHY links |
| Dynamic Resistance | 0.057 Ω - enables fast, low-impedance current shunting to ground during ESD events |
| ESD Rating | ±30 kV contact per IEC 61000−4−2 Level 4 - exceeds smartphone/tablet end-equipment compliance requirements |
| Surge Rating | 100 A peak pulse (8/20 µs) per IEC 61000−4−5 - protects against induced lightning surges in docked or cabled systems |
Pinout & Package
NSPM6201MUTBG uses the UDFN3 (Case 517DN) package: 2.0 mm × 2.0 mm body, 1.3 mm pitch, 0.5 mm height, with an exposed thermal pad. Pin 1 and Pin 2 are symmetrical I/O terminals; Pin 3 is the common cathode/anode reference (GND).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Bi-directional I/O terminal | Connected to protected signal line (e.g., USB D+, HDMI TMDS+); shares clamping path with Pin 2 |
| Pin 2 | Bi-directional I/O terminal | Connected to second protected signal line (e.g., USB D−, HDMI TMDS−); electrically identical to Pin 1 |
| Pin 3 | Common reference (GND) | Low-inductance connection point to system ground plane; critical for effective transient energy dissipation |
Key Features
| Feature | Design Value |
|---|---|
| IEC 61000−4−2 Level 4 ESD protection | ±30 kV contact discharge - eliminates need for secondary board-level ESD filters in handheld designs |
| Low clamping voltage at high current | 36 V @ 100 A - keeps protected ICs within safe operating area during lightning-surge events |
| Matched bi-directional response | Identical VC and VBR characteristics for Pins 1→3 and 2→3 - ensures balanced protection on differential pairs |
| Controlled junction capacitance | 320–400 pF - enables use on 480 Mbps USB 2.0 and MIPI D-PHY without measurable eye degradation |
| Pb-free, Halogen-free, RoHS-compliant | Meets IPC-J-STD-609 Class 3 moisture sensitivity and JEDEC J-STD-020 reflow profiles - supports automated SMT assembly |
Applications
| USB 2.0 Port Protection | HDMI Interface Protection |
|---|---|
Use Scenario: Protecting USB 2.0 D+/D− lines on smartphones, tablets, and docking stations from user-hand ESD and cable-induced surges. IC Role / Device Role: Bi-directional transient voltage suppressor placed directly at connector, shunting ESD current to GND before reaching USB transceiver. Use Value: Clamping voltage ≤39 V at 100 A prevents latch-up or gate oxide damage in 1.8 V/3.3 V USB PHYs while maintaining <400 pF loading. | Use Scenario: Safeguarding HDMI 1.4 TMDS channels in TVs, monitors, and set-top boxes against hot-plug and handling ESD. IC Role / Device Role: Low-capacitance TVS array protecting differential TMDS+ and TMDS− pairs referenced to chassis ground. Use Value: Matched 320–400 pF capacitance and symmetric clamping preserve signal integrity up to 1080p60 video timing margins. |
| MIPI D-PHY Camera Interface | Industrial Sensor Hub I/O Protection |
Use Scenario: Shielding MIPI D-PHY data lanes (CLKP/CLKN, DAT0P/DAT0N) in mobile camera modules from board-level ESD coupling. IC Role / Device Role: Dual-channel bi-directional TVS placed adjacent to image sensor connector to minimize trace inductance. Use Value: 0.057 Ω dynamic resistance ensures sub-10 ns response, limiting voltage overshoot to <36 V even under 8 kV IEC 61000−4−2 contact discharge. | Use Scenario: Hardening RS-485, CAN FD, or GPIO lines on industrial sensor hubs exposed to field maintenance ESD and induced surges. IC Role / Device Role: General-purpose bi-directional surge clamp for low-speed digital I/O where space-constrained UDFN3 footprint is required. Use Value: −65 °C to +150 °C operating range and 100 A surge rating support deployment in uncontrolled ambient environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD and surge protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SP1006-01WTG | Unidirectional; 12 V VRWM; 300 pF typical capacitance; 30 kV ESD rating | Requires separate devices per signal line; not suitable for differential pair clamping | Select when protecting single-ended 3.3 V logic lines with tighter capacitance budget (<300 pF) |
| ESD9X5.0ST5G | Bi-directional; 5 V VRWM; 25 pF typical capacitance; 30 kV ESD rating | Lower clamping voltage (~12 V @ 1 A) but limited to ≤5 V systems; insufficient for 20 V surge margin | Select only for low-voltage (≤5 V) I/O where ultra-low capacitance is mandatory and surge current <10 A |
Compared with SP1006-01WTG and ESD9X5.0ST5G, the NSPM6201MUTBG uniquely supports 20 V working voltage and 100 A surge capability in a bi-directional dual-line configuration - making it the only option among the three qualified for USB 2.0, HDMI, and MIPI D-PHY interfaces requiring simultaneous differential-line protection with high surge immunity.
Availability
NSPM6201MUTBG is available at Aetrix Electronics and suitable for USB 2.0 port protection, HDMI interface hardening, and MIPI D-PHY camera module designs requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for NSPM6201MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The NSPM6201MUTBG belongs to onsemi's Surge and ESD Protection Diode product line, engineered specifically for high-density, high-speed interface protection in space-constrained portable and IoT edge devices.
FAQ
What is the maximum clamping voltage of the NSPM6201MUTBG at 100 A surge current?
The NSPM6201MUTBG exhibits a maximum clamping voltage of 39 V at 100 A peak pulse current (8/20 µs waveform), as specified in its Electrical Characteristics table. This value ensures downstream 3.3 V or 5 V interface ICs remain within safe operating limits during severe lightning-surge events. The NSPM6201MUTBG achieves this performance via low dynamic resistance (0.057 Ω) and optimized silicon geometry.
Is the NSPM6201MUTBG suitable for protecting differential high-speed interfaces like USB 2.0 or MIPI D-PHY?
Yes, the NSPM6201MUTBG is explicitly designed for differential interface protection: its bi-directional symmetry, matched clamping between Pins 1/2 and Pin 3, and controlled 320–400 pF capacitance enable direct placement on USB 2.0 D+/D− or MIPI D-PHY data lanes without signal integrity loss. The NSPM6201MUTBG's 0.057 Ω dynamic resistance further ensures sub-10 ns response to ESD transients.
What package type and dimensions does the NSPM6201MUTBG use?
The NSPM6201MUTBG uses the UDFN3 package (Case 517DN): 2.0 mm × 2.0 mm body size, 1.3 mm pin pitch, 0.5 mm maximum height, with three terminals and an exposed thermal pad. Dimensions are fully specified in the mechanical drawing - including 0.25–0.35 mm terminal width (b) and 1.30 mm nominal K dimension - ensuring compatibility with standard 0202 land patterns. The NSPM6201MUTBG is supplied in 3000-unit tape-and-reel format.
Does the NSPM6201MUTBG meet RoHS and halogen-free compliance requirements?
Yes, the NSPM6201MUTBG is Pb-free, halogen-free, and BFR-free, and fully complies with EU RoHS Directive 2011/65/EU. This is confirmed in the Features section of the official datasheet (NSPM6201/D, Rev. 1, August 2024). The NSPM6201MUTBG also conforms to IPC-J-STD-609 Class 3 moisture sensitivity and JEDEC J-STD-020 reflow profiles for lead-free assembly.
What is the operating temperature range for the NSPM6201MUTBG?
The NSPM6201MUTBG is rated for an operating junction and storage temperature range of −65 °C to +150 °C, as stated in the Maximum Ratings table. This wide range supports deployment in automotive cabin modules, industrial sensors, and outdoor-connected devices where ambient extremes are expected. The NSPM6201MUTBG maintains full ESD and surge performance across this entire range without derating.
NSPM6201MUTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 3-PowerUDFN
- Series:
- *
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 20V (Max)
- Voltage - Breakdown (Min):
- 21V
- Voltage - Clamping (Max) @ Ipp:
- 39V
- Current - Peak Pulse (10/1000µs):
- 100A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 400pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-UDFN (2x2)
NSPM6201MUTBG FAQ
1.How can I place an order for NSPM6201MUTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSPM6201MUTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSPM6201MUTBG reliable?
The price and inventory of NSPM6201MUTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPM6201MUTBG is usually 5 days.
3.What payment methods are accepted for NSPM6201MUTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPM6201MUTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSPM6201MUTBG?
NSPM6201MUTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSPM6201MUTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSPM6201MUTBG?
For technical support, including NSPM6201MUTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPM6201MUTBG requirements.
6.How does Aetrix verify that NSPM6201MUTBG is sourced from the original manufacturer or authorized distributors?
All NSPM6201MUTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPM6201MUTBG meets industry standards.
7.What is the process for return or replacement of NSPM6201MUTBG?
All NSPM6201MUTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSPM6201MUTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSPM6201MUTBG part is unused and in its original packaging.
Return procedure for NSPM6201MUTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSPM6201MUTBG Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
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ESD5Z5.0T1G
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
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