onsemi NSPU3061N2T5G

Overview

NSPU3061N2T5G from onsemi is a unidirectional ESD and surge protection diode designed for I/O line protection in portable electronics. It features 6.3 V working peak reverse voltage, ±30 kV IEC 61000−4−2 contact ESD rating, 36 A 8/20 µs surge current capability, 90–110 pF junction capacitance, and X2DFN2 (1.0 mm × 0.6 mm) package - optimized for USB VBUS/CC, microphone, and GPIO lines in space-constrained designs.

For engineers reviewing the NSPU3061N2T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8 A TLP (6.4 V), low leakage (<1 µA at 6.3 V), dynamic resistance (0.025 Ω), IEC 61000−4−5 lightning robustness, and RoHS-compliant Pb-free packaging.

Technical Context

The NSPU3061N2T5G operates as a single-channel, cathode-to-GND unidirectional TVS diode with avalanche breakdown triggering. Its clamping behavior is characterized via TLP (100 ns pulse, Z₀ = 50 Ω) and IEC 61000−4−2 waveforms, delivering sub-7.7 V clamping at 36 A (8/20 µs) and 6.4 V at 8 A TLP - meeting Level 4 ESD immunity requirements.

It exhibits low dynamic resistance (0.025 Ω) and tight capacitance control (90–110 pF @ 1 MHz, 0 V), enabling high-speed signal integrity preservation on data lines like USB CC and audio paths without signal distortion or timing skew.

Key Specifications

Pinout & Package

NSPU3061N2T5G is housed in the X2DFN2 surface-mount package (1.0 mm × 0.6 mm × 0.37 mm, 0.65 mm pitch), featuring two terminals in a cathode-anode configuration. The compact outline supports high-density PCB layouts in smartphones, tablets, and wearables.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional ESD protection applications.

Compared with ESD5Z3.3T5G and SP1001-01UTG, the NSPU3061N2T5G offers optimal balance of 6.3 V VRWM headroom for 5 V systems, industry-leading 6.4 V TLP clamping, and smallest available footprint - making it preferred for next-gen compact USB and audio interfaces.

Availability

NSPU3061N2T5G is available at Aetrix Electronics and suitable for USB Type-C interface protection, portable audio subsystems, and microcontroller GPIO hardening requiring stable component supply across high-mix consumer electronics production.

Supply support for NSPU3061N2T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and intelligent edge applications.

The NSPU3061N2T5G belongs to onsemi's precision ESD protection portfolio, engineered specifically for high-density portable electronics where minimal capacitance, ultra-low leakage, and sub-7 V clamping are mandatory for signal integrity and reliability.

FAQ

What is the maximum working voltage supported by the NSPU3061N2T5G?

The NSPU3061N2T5G has a working peak reverse voltage (VRWM) of 6.3 V, meaning it can safely protect signal lines operating up to 6.3 V DC without significant leakage. This makes it ideal for 5 V USB VBUS and 3.3 V–5 V GPIO applications. Exceeding 6.3 V risks increased reverse current and potential thermal stress. The NSPU3061N2T5G datasheet specifies VRWM under TA = 25°C conditions with tight tolerance control.

Does the NSPU3061N2T5G meet IEC 61000−4−2 Level 4 ESD requirements?

Yes, the NSPU3061N2T5G is rated for ±30 kV contact discharge per IEC 61000−4−2 Level 4 - the highest standard level for system-level ESD immunity. This rating is verified using standardized test setups per Figure 14 in the official datasheet. The NSPU3061N2T5G achieves this through low dynamic resistance and fast avalanche response, ensuring reliable clamping during real-world human-body model discharges.

What is the junction capacitance of the NSPU3061N2T5G and why does it matter?

The NSPU3061N2T5G exhibits 90–110 pF junction capacitance at 0 V bias and 1 MHz, measured per Table 3 in the datasheet. This low, controlled capacitance prevents signal integrity degradation on high-speed or analog lines - such as USB CC or microphone bias paths - where excessive capacitance would cause rise-time slowing or frequency roll-off. The NSPU3061N2T5G maintains this spec across its operating temperature range.

Can the NSPU3061N2T5G be used for bidirectional protection?

No, the NSPU3061N2T5G is a unidirectional ESD protection device, configured with cathode tied to ground and anode connected to the protected line. It only clamps positive transients above VRWM + VBR and does not protect against negative excursions beyond −0.7 V (forward conduction). For bidirectional protection, a different device such as the ESD7L5.0D is required. The NSPU3061N2T5G pinout and electrical characteristics confirm strict unidirectional operation.

What package type does the NSPU3061N2T5G use and what are its dimensions?

The NSPU3061N2T5G uses the X2DFN2 package (Case 714AB), measuring 1.0 mm × 0.6 mm × 0.37 mm with 0.65 mm terminal pitch. This ultra-compact, two-terminal DFN format enables placement directly at I/O connectors and under fine-pitch components. The NSPU3061N2T5G marking "6M" corresponds to date code and device variant per the onsemi marking diagram in the datasheet.