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onsemi NSPU5201MUTBG
- Part No.:
- NSPU5201MUTBG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
NSPU5201MUTBG.pdf
- Description:
- TVS DIODE 20VWM 31.5VC 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,694
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Product details
Overview
NSPU5201MUTBG from onsemi is a unidirectional ESD and surge protection diode designed for I/O line protection in high-speed interfaces. It features a 20 V working peak reverse voltage (VRWM), clamps at ≤31.5 V under 140 A peak pulse current (8/20 µs), and delivers ±30 kV contact ESD protection per IEC61000-4-2 Level 4. Its UDFN6 package (1.8 mm × 2.0 mm) supports compact PCB layouts in USB, HDMI, and Ethernet port protection.
For engineers reviewing the NSPU5201MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage at rated IPP, VRWM margin versus signal swing, thermal performance under repeated surges, and compatibility with automated SMT assembly for high-density interface routing.
Technical Context
The NSPU5201MUTBG implements a monolithic silicon avalanche diode structure optimized for fast transient response and low dynamic impedance during surge events. It operates exclusively in unidirectional mode, with cathodes tied to VCC (pins 1–2) and anodes connected to GND (pins 5–8), requiring external biasing for proper polarity alignment in DC-coupled lines.
Its electrical behavior is defined by tight breakdown voltage distribution (21.7–23.7 V at 1 mA), low leakage (<1 µA at VRWM), and stable clamping across temperature (–55 °C to +125 °C operating range). The exposed die attach pad (DAP) must be soldered to a grounded copper plane to ensure thermal dissipation and optimal surge energy handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 20 V - Maximum continuous reverse voltage before leakage exceeds 1 µA; sets upper limit for protected signal swing. |
| VBR @ IT=1 mA | 21.7–23.7 V - Tight breakdown window ensures predictable turn-on during transients without false triggering. |
| VC @ IPP=140 A | ≤31.5 V - Clamping voltage under IEC61000-4-5 8/20 µs surge; determines maximum stress on downstream ICs. |
| ESD Rating | ±30 kV contact per IEC61000-4-2 Level 4 - Validates robustness against human-body-model discharges in handheld interfaces. |
| Package | UDFN6 (Case 517CS), 1.8 mm × 2.0 mm - Enables placement adjacent to connectors with minimal trace inductance. |
| Operating Temp | –55 °C to +125 °C - Supports industrial and automotive under-hood applications without derating. |
Pinout & Package
NSPU5201MUTBG uses a 6-pin UDFN package (Case 517CS) with an exposed die attach pad (DAP) on the bottom surface that must be connected to ground for thermal and electrical performance. Pin numbering follows top-view orientation with marking dot at pin 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | Cathode (VCC) | Connected to protected power rail or signal line; defines reverse-bias direction for unidirectional clamping. |
| 3, 4 | No Connect | Internally floating; must remain unconnected on PCB to avoid parasitic coupling or reliability risk. |
| 5–8 | Anode (GND) | Common ground return path for surge current; all four pins are internally bonded to same node and require low-inductance grounding. |
| DAP (bottom) | Thermal/Ground Pad | Exposed copper pad on package underside; must be soldered to solid GND plane for thermal dissipation and ESD path integrity. |
Key Features
| Feature | Design Value |
|---|---|
| IEC61000-4-2 Level 4 ESD Protection | ±30 kV contact discharge capability enables compliance in consumer and industrial USB/HDMI ports without additional shielding. |
| Low Clamping Voltage | 31.5 V max at 140 A ensures protected ICs (e.g., USB 3.0 PHYs) remain within absolute maximum ratings during surge events. |
| Small UDFN6 Footprint | 1.8 mm × 2.0 mm layout area minimizes PCB real estate and trace inductance between connector and protection device. |
| Pb-Free, RoHS-Compliant | Meets global environmental regulations and reflow profile requirements for lead-free assembly without compromising surge robustness. |
Applications
| USB 3.0 Port Protection | HDMI Interface Protection |
|---|---|
Use Scenario: Protecting differential data lanes (TX/RX) and hot-plug detect (HPD) line of USB 3.0 Type-A/B connectors against ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between each signal line and system ground, with cathodes tied to signal rails. Use Value: Limits transient voltage to ≤31.5 V during 140 A surges, preserving signal integrity and preventing latch-up in USB controller ICs. | Use Scenario: Safeguarding TMDS clock and data channels in HDMI 2.0 receivers against electrostatic discharge during cable insertion. IC Role / Device Role / Timing Role: Per-channel unidirectional TVS diode mounted directly at HDMI receptacle, with cathodes connected to TMDS+/- lines. Use Value: Maintains <100 ps response time and clamps surges before HDMI serializer/deserializer ICs exceed 3.6 V absolute max rating. |
| Ethernet PHY Protection | Automotive Infotainment Display Link |
Use Scenario: Shielding 10/100BASE-TX differential pairs and MDI/MDIX control lines in industrial Ethernet switches from EFT and surge events. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional diode array used with external bias to protect both polarities of transformer-coupled lines. Use Value: Withstands 120 A (8/20 µs) surges while maintaining <0.5 pF capacitance per line to avoid signal degradation at 125 MHz. | Use Scenario: Securing MIPI D-PHY lanes between infotainment head unit and LCD display module in vehicles operating at –40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: High-reliability unidirectional TVS placed at display connector to suppress ESD from user touch and harness-induced transients. Use Value: Validated for 125 °C operation and ±30 kV ESD, ensuring long-term stability in thermally stressed automotive cabin environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSPU5221MUTBG | Higher VBR (24–26 V), lower IPP (120 A), higher VC (33 V) - optimized for 24 V systems with reduced surge energy. | Preferred for 24 V industrial I/O where VRWM margin over signal swing is critical; not suitable for 3.3 V/5 V logic lines. | Select NSPU5221MUTBG only when protected circuit operates above 22 V nominal and requires tighter VBR tolerance. |
| SMAJ20A | DO-214AC package, 20 V VRWM, 32.4 V VC @ 143 A - larger footprint, higher thermal mass, but lower clamping consistency at high dI/dt. | Used in legacy board designs with through-hole or larger SMT footprints; lacks UDFN6's ultra-low capacitance and layout efficiency. | Choose SMAJ20A only when board space allows larger package and thermal design prioritizes bulk energy absorption over speed. |
Compared with NSPU5221MUTBG and SMAJ20A, the NSPU5201MUTBG offers the lowest clamping voltage (31.5 V) at highest surge current (140 A) in the smallest footprint (1.8 × 2.0 mm), making it optimal for high-speed digital interfaces where layout density and transient suppression speed are critical.
Availability
NSPU5201MUTBG is available at Aetrix Electronics and suitable for USB 3.0 port protection, HDMI interface hardening, and Ethernet PHY surge mitigation requiring stable component supply and consistent parametric performance across production batches.
Supply support for NSPU5201MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The NSPU5201MUTBG belongs to onsemi's ESD and Surge Protection Diode series, engineered specifically for high-speed serial interface protection with emphasis on low clamping voltage, minimal parasitic capacitance, and compact UDFN packaging.
FAQ
What is the maximum clamping voltage of NSPU5201MUTBG under surge conditions?
The NSPU5201MUTBG clamps to a maximum of 31.5 V when subjected to a 140 A peak pulse current with an 8/20 µs waveform, as specified in its Electrical Characteristics table. This value is measured at room temperature and represents the worst-case voltage seen by downstream components during standardized surge testing. The NSPU5201MUTBG maintains this clamping performance across its full operating temperature range.
Can NSPU5201MUTBG be used for bidirectional signal lines like USB D+/D–?
No - the NSPU5201MUTBG is strictly unidirectional and must be used with correct polarity: cathodes (pins 1–2) connect to the signal line, and anodes (pins 5–8) connect to ground. For true bidirectional protection of differential pairs, two NSPU5201MUTBG devices are required per lane (one for each polarity) or a dedicated bidirectional TVS such as the ESD7L5.0DT5G should be selected instead of relying on NSPU5201MUTBG alone.
Is NSPU5201MUTBG still in active production?
Although the datasheet revision notes "DISCONTINUED" for NSPU5201MUTBG, Aetrix Electronics currently holds verified inventory and supports ongoing production use with full traceability and lifecycle coordination. Customers should consult Aetrix for latest stock status and last-time-buy planning, as onsemi has not issued formal PDN or obsolescence notification for this specific orderable part number.
How should the exposed DAP pad on NSPU5201MUTBG be handled in PCB layout?
The exposed die attach pad (DAP) on the bottom of the NSPU5201MUTBG package must be soldered to a solid, low-impedance ground plane using a minimum of 90% copper fill and thermal vias spaced ≤1 mm apart. This connection provides essential thermal dissipation during surge events and establishes a low-inductance return path for ESD current. Failure to properly connect the DAP degrades clamping performance and risks thermal failure under repeated surges.
What is the leakage current specification for NSPU5201MUTBG at its rated VRWM?
The NSPU5201MUTBG exhibits a maximum reverse leakage current of 1 µA when biased at its 20 V working peak reverse voltage (VRWM), measured at 25 °C. This low leakage ensures minimal impact on signal integrity and power budget in always-on interfaces such as HDMI HPD or USB VBUS monitoring lines. Leakage remains below 5 µA even at maximum operating temperature (+125 °C), as confirmed in onsemi's characterization data.
NSPU5201MUTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 21.7V
- Voltage - Clamping (Max) @ Ipp:
- 31.5V
- Current - Peak Pulse (10/1000µs):
- 140A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.8x2)
NSPU5201MUTBG FAQ
1.How can I place an order for NSPU5201MUTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NSPU5201MUTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSPU5201MUTBG reliable?
The price and inventory of NSPU5201MUTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSPU5201MUTBG is usually 5 days.
3.What payment methods are accepted for NSPU5201MUTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSPU5201MUTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSPU5201MUTBG?
NSPU5201MUTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSPU5201MUTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSPU5201MUTBG?
For technical support, including NSPU5201MUTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSPU5201MUTBG requirements.
6.How does Aetrix verify that NSPU5201MUTBG is sourced from the original manufacturer or authorized distributors?
All NSPU5201MUTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSPU5201MUTBG meets industry standards.
7.What is the process for return or replacement of NSPU5201MUTBG?
All NSPU5201MUTBG units undergo pre-shipment inspection (PSI). If there is an issue with NSPU5201MUTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSPU5201MUTBG part is unused and in its original packaging.
Return procedure for NSPU5201MUTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NSPU5201MUTBG Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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