NXP Semiconductors NT2H1311G0DUDV

Overview

NT2H1311G0DUDV from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC designed for mass-market smart labeling and authentication applications. It delivers 144 bytes of user memory, 50 pF input capacitance, 13.56 MHz operating frequency, and full ISO/IEC 14443 Type A compliance - enabling integration into compact labels, business cards, and electronic shelf tags.

For engineers reviewing the NT2H1311G0DUDV datasheet, NT2H1311G0DUDV pinout, NT2H1311G0DUDV application, or NT2H1311G0DUDV equivalent, this page provides verified technical context, memory architecture details, security features (7-byte UID, ECC originality signature, password protection), and real-world deployment constraints for NFC tag design and production.

Technical Context

The NT2H1311G0DUDV implements a complete ISO/IEC 14443 Type A RF interface with integrated rectifier, clock regenerator, and power-on reset - requiring no external components beyond an antenna coil. Its digital control unit handles anticollision, command interpretation (READ, FAST_READ, PWD_AUTH, GET_VERSION), and EEPROM access with tearing-proof write operations.

Memory organization comprises 45 pages × 4 bytes = 180 bytes total EEPROM, with 144 bytes user-programmable (pages 04h–27h), 4-byte capability container (page 03h), static lock bytes (page 02h), and manufacturer data (pages 00h–01h + byte 0 of 02h). Locking supports per-page read-only protection for first 16 pages and double-page granularity above.

Key Specifications

Pinout & Package

NT2H1311G0DUDV is supplied as a bare die in FFC Bump format (8-inch wafer, 120 µm thickness, Au bumps) and interfaces exclusively via two antenna terminals - LA and LB - with no conventional package pins or active I/O signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2H1311G0DUF and NT2H1311G0DA8, NT2H1311G0DUDV balances mechanical durability (120 µm wafer) and inlay compatibility - making it the preferred choice for industrial-grade NFC labels requiring consistent performance across diverse lamination processes and substrate types.

Availability

NT2H1311G0DUDV is available at Aetrix Electronics and suitable for smart advertisement, product authentication, and electronic shelf label applications requiring stable component supply, long-lifecycle support, and traceable sourcing for global OEM programs.

Supply support for NT2H1311G0DUDV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, with deep expertise in RFID, NFC, and secure element technologies used across automotive, industrial, and consumer markets.

The NTAG21x family - including NT2H1311G0DUDV - was engineered specifically for high-volume, cost-sensitive NFC tagging applications, emphasizing small-footprint antenna compatibility, production-line efficiency (FAST_READ), and built-in security for brand protection and user engagement.

FAQ

What is the exact memory structure of NT2H1311G0DUDV?

NT2H1311G0DUDV contains 180 bytes of total EEPROM organized in 45 pages of 4 bytes each. Of these, 144 bytes (pages 04h–27h) are user-programmable read/write memory; 4 bytes (page 03h) form the pre-programmed capability container; 26 bytes (pages 00h–01h and byte 0 of 02h) hold the 7-byte UID and check bytes; remaining space accommodates static/dynamic lock bits and configuration data. NT2H1311G0DUDV does not include user-accessible ROM or volatile RAM.

Does NT2H1311G0DUDV support password protection and how is it implemented?

Yes, NT2H1311G0DUDV supports 32-bit password protection to restrict memory writes. Password verification is triggered via the PWD_AUTH command and grants temporary access to password-protected pages in the AUTHENTICATED state. The password itself is stored in dedicated EEPROM locations (pages 29h–2Ah for NTAG213), and failed attempts can be limited via configurable counters. NT2H1311G0DUDV enforces irreversible locking after successful authentication unless reconfigured through authorized host commands.

How does the FAST_READ command improve system performance in NT2H1311G0DUDV?

The FAST_READ command in NT2H1311G0DUDV allows reading up to 128 bytes in a single RF transaction - significantly reducing communication overhead compared to standard READ (4 bytes per frame). This accelerates NDEF message retrieval in production environments, enabling faster label encoding throughput and improved user experience during smartphone scans. NT2H1311G0DUDV's implementation requires no host-side buffering and operates within standard NFC Forum Type 2 timing constraints.

Can NT2H1311G0DUDV be used without an external antenna, and what are the antenna design constraints?

No, NT2H1311G0DUDV requires an external antenna connected across LA and LB terminals to operate - it has no internal antenna or alternative power source. Antenna design must form a resonant LC circuit tuned to 13.56 MHz, with typical inductance values between 0.8 µH and 2.5 µH depending on geometry and substrate. NXP provides reference layouts and simulation guidelines (e.g., AN11759); NT2H1311G0DUDV's 50 pF input capacitance simplifies matching for compact, low-profile inlays.

What security mechanisms prevent cloning of NT2H1311G0DUDV-based tags?

NT2H1311G0DUDV incorporates three hardware-enforced security layers: (1) factory-programmed 7-byte UID with ISO/IEC 14443-3-compliant BCC bytes, (2) ECC-based originality signature stored in protected memory and readable via READ_SIG command, and (3) one-time programmable capability container bits that bind tag behavior to certified configurations. These features collectively ensure cryptographic uniqueness and tamper evidence - making NT2H1311G0DUDV unsuitable for replication in counterfeit supply chains.