NXP Semiconductors NT2H1311G0DUDZ

Overview

NT2H1311G0DUDZ from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC designed for mass-market smart labeling and authentication applications. It delivers 144 bytes of user memory, 50 pF input capacitance, 13.56 MHz operating frequency, and full ISO/IEC 14443 Type A compliance - enabling integration into compact labels, business cards, and electronic shelf tags.

For engineers reviewing the NT2H1311G0DUDZ datasheet, NT2H1311G0DUDZ pinout, NT2H1311G0DUDZ application, or NT2H1311G0DUDZ equivalent, this page provides verified technical context, memory architecture details, security features (7-byte UID, ECC originality signature, password protection), and real-world deployment constraints for NFC tag inlay design and production.

Technical Context

The NT2H1311G0DUDZ implements a dedicated RF interface with rectifier, clock regenerator, and POR circuitry - enabling passive operation solely from the 13.56 MHz magnetic field. Its digital control unit handles anticollision, command interpretation (READ, FAST_READ, PWD_AUTH, GET_VERSION), and EEPROM access without external components.

Memory organization comprises 45 pages × 4 bytes = 180 bytes total EEPROM, with 36 pages (144 bytes) allocated as freely programmable user memory. Static lock bits (page 02h) secure pages 03h–0Fh individually, while dynamic lock bytes (page 28h) protect higher pages in 2-page granularity - all implemented with tearing-proof write logic.

Key Specifications

Pinout & Package

NT2H1311G0DUDZ is supplied as a bare die in FFC Bump format: 8-inch wafer, 120 µm thickness, Au bumps, film frame carrier, SECS-II electronic die marking. It has two terminals only - LA and LB - for direct connection to an external antenna coil. No additional passive components are required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2H1311G0DUF, NT2H1311G0DUDZ trades 45 µm in thickness for enhanced handling yield and thermal stability in lamination processes; compared with NT2H1311G0DA8, it requires antenna co-design but delivers lower BOM cost and greater layout flexibility for specialized inlay geometries.

Availability

NT2H1311G0DUDZ is available at Aetrix Electronics and suitable for NFC smart labels, product authentication systems, and electronic shelf labels requiring stable component supply across high-volume consumer electronics and retail deployments.

Supply support for NT2H1311G0DUDZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, with core expertise in RFID, NFC, and secure element technologies for automotive, industrial, and consumer markets.

The NT2H1311G0DUDZ belongs to the NTAG21x family - engineered specifically for cost-sensitive, high-volume NFC tag applications demanding robust RF performance, field-programmable security, and seamless NDEF compatibility.

FAQ

What is the exact memory structure of NT2H1311G0DUDZ?

NT2H1311G0DUDZ contains 180 bytes of total EEPROM organized in 45 pages of 4 bytes each. Of these, 144 bytes (pages 04h–27h) are user-programmable read/write memory. Pages 00h–02h hold the 7-byte UID and check bytes; page 03h is the pre-programmed Capability Container; pages 02h and 28h implement static and dynamic locking mechanisms respectively - all confirmed in the official NTAG213 datasheet Rev. 3.2.

Does NT2H1311G0DUDZ support password protection and how is it implemented?

Yes, NT2H1311G0DUDZ supports 32-bit password protection. A password can be programmed into the PWD page (page 29h), and subsequent memory writes to protected pages require prior PWD_AUTH command execution. The IC enforces configurable limits on failed attempts and supports irreversible locking of password-related configuration bits - all detailed in Section 8.8 of the NTAG213 datasheet.

Can NT2H1311G0DUDZ be used without an external antenna?

No. NT2H1311G0DUDZ is a bare-die NFC IC requiring external antenna connection via its LA and LB terminals. It harvests power and exchanges data exclusively through electromagnetic coupling with a tuned LC circuit - no internal antenna or battery is integrated. Antenna design guidelines are provided in NXP Application Note AN11759.

What security features does NT2H1311G0DUDZ provide for anti-counterfeiting?

NT2H1311G0DUDZ provides four hardware-enforced security layers: (1) factory-programmed 7-byte UID with ISO/IEC 14443-3 cascade-level 2 compliance; (2) ECC-based originality signature accessible via READ_SIG command; (3) one-time programmable Capability Container with immutable configuration bits; (4) field-programmable page locking that permanently disables write access to designated memory regions - all documented in Sections 1.3 and 8.5.2–8.5.4.

Is NT2H1311G0DUDZ pin-compatible with other NTAG21x variants like NT2H1511G0DUD?

Yes - NT2H1311G0DUDZ shares identical pinout (LA/LB), package footprint (FFC Bump), and electrical interface with all NTAG21x bare-die variants including NT2H1511G0DUD and NT2H1611G0DUD. Differences are limited to EEPROM size (144/504/888 bytes user memory) and dynamic lock byte location - allowing drop-in replacement where memory requirements align.