NXP Semiconductors NT2H1311G0DUFV

Overview

NT2H1311G0DUFV from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC designed for mass-market smart labeling and authentication applications. It features 144 bytes of user memory, 50 pF input capacitance, 13.56 MHz operating frequency, and supports FAST_READ command execution - enabling rapid NDEF message scanning in retail shelf labels and mobile companion tags.

For engineers reviewing the NT2H1311G0DUFV datasheet, NT2H1311G0DUFV pinout, NT2H1311G0DUFV application, or NT2H1311G0DUFV equivalent, this page delivers verified technical context, precise memory architecture details, NFC communication timing behavior, security mechanisms (ECC originality signature, 7-byte UID, password protection), and real-world deployment constraints for thin-film inlay integration.

Technical Context

The NT2H1311G0DUFV implements a fully ISO/IEC 14443 Type A–compliant RF interface with 106 kbit/s data transfer, 16-bit CRC per block, odd parity, and bit coding for robust field operation. Its Digital Control Unit handles anticollision, state management (IDLE/READY1/ACTIVE/HALT), and command interpretation including PWD_AUTH, READ_SIG, and FAST_READ.

Memory organization comprises 45 pages × 4 bytes = 180 bytes total EEPROM, with 36 pages (144 bytes) allocated as user Read/Write area, 4-page Capability Container pre-programmed to NFC Forum T2T spec, and static lock bits at page 02h controlling write access to pages 03h–0Fh. Dynamic locking starts at page 28h for extended memory protection.

Key Specifications

Pinout & Package

NT2H1311G0DUFV is supplied as a bare die in FFC Bump format on 8-inch wafer, with 75 µm thickness and Au bumps. It has no conventional package or leads; electrical connection is made exclusively via two antenna terminals (LA and LB) bonded directly to an external planar coil.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2H1311G0DUFV, NT2H1311G0DA8 trades wafer-level miniaturization for SMT manufacturability, while NT2H1511G0DUF extends memory capacity without altering physical integration constraints - making both viable alternatives depending on assembly method and data payload requirements.

Availability

NT2H1311G0DUFV is available at Aetrix Electronics and suitable for electronic shelf labels, smart advertisement inlays, and product authentication tags requiring stable component supply across high-volume consumer electronics manufacturing.

Supply support for NT2H1311G0DUFV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and consumer markets, with deep expertise in RFID and NFC technology.

The NTAG21x family, including NT2H1311G0DUFV, was engineered specifically for cost-sensitive, high-volume NFC tagging applications - balancing robust security, small-footprint antenna compatibility, and seamless smartphone interoperability.

FAQ

What is the exact memory configuration of NT2H1311G0DUFV?

NT2H1311G0DUFV is the NTAG213 variant with 180 bytes total EEPROM organized in 45 pages of 4 bytes each. Of these, 144 bytes (pages 04h–27h) are freely available user Read/Write memory, 4 bytes form the pre-programmed Capability Container (page 03h), and 26 bytes are reserved for manufacturer data, UID, and lock bits. The default delivery state includes ECC signature and UID pre-loaded.

Does NT2H1311G0DUFV support password protection and how is it implemented?

Yes, NT2H1311G0DUFV supports 32-bit password protection with configurable limits on failed attempts. Password verification is required before accessing memory pages configured for protected access, and successful authentication transitions the IC from ACTIVE to AUTHENTICATED state. The password itself is stored in dedicated EEPROM locations (pages 2Bh–2Ch) and can be changed in-field using the PWD_AUTH and WRITE commands.

Can NT2H1311G0DUFV be used in ultrathin applications such as magazine inserts or gaming cards?

Yes, NT2H1311G0DUFV is explicitly optimized for ultrathin applications: its 75 µm wafer thickness, 50 pF input capacitance, and absence of external components enable integration into sub-0.1 mm laminates. This matches NXP's stated design goal for "ultrathin tags" in magazines and gaming cards - confirmed by mechanical specifications in the official datasheet Rev. 3.2.

How does the FAST_READ command improve system performance in NT2H1311G0DUFV?

The FAST_READ command in NT2H1311G0DUFV allows reading up to 128 bytes in a single RF transaction, eliminating multiple command-response cycles needed for sequential page reads. This reduces total read time by ~65% compared to standard READ commands - critical for high-speed production line verification and low-latency smartphone interactions in retail environments.

Is NT2H1311G0DUFV NFC Forum Type 2 Tag certified and what does that guarantee?

Yes, NT2H1311G0DUFV is fully compliant with NFC Forum Type 2 Tag specification (Ref. 2) and ISO/IEC 14443 Type A. Certification guarantees interoperability with all NFC Forum–certified devices, standardized NDEF message formatting, predictable anticollision behavior, and consistent command set implementation - ensuring reliable tap-to-launch functionality across Android, iOS, and embedded NFC readers.